2SK2613(Q) [TOSHIBA]

TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,8A I(D),TO-247VAR;
2SK2613(Q)
型号: 2SK2613(Q)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,8A I(D),TO-247VAR

文件: 总6页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SK2613  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)  
2SK2613  
Switching Regulator Applications, DC-DC Converter and  
Motor Drive Applications  
Unit: mm  
Low drain-source ON-resistance: R  
= 1.4 (typ.)  
DS (ON)  
High forward transfer admittance: Y = 6.0 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 800 V)  
DSS  
DS  
Enhancement-model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
1000  
1000  
±30  
8
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
1. GATE  
2. DRAIN (HEAT SINK)  
3. SOURSE  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
24  
DP  
Drain power dissipation (Tc = 25°C)  
P
150  
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
910  
mJ  
(Note 2)  
TOSHIBA  
216C1B  
Avalanche current  
I
8
15  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 4.6 g (typ.)  
AR  
T
150  
ch  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
2
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.833  
50  
°C/W  
°C/W  
th (ch-c)  
R
1
th (ch-a)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: = 90 V, T = 25°C, L = 26.3 mH, R = 25 Ω, I = 8 A  
V
DD  
ch  
G
AR  
3
Note 3: Repetitive rating: Pulse width limited by max junction temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2010-01-29  
2SK2613  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±30 V, V  
= 0 V  
±30  
±10  
μA  
V
GSS  
GS  
I = ±10 μA, V  
G
DS  
Gate-source breakdown voltage  
Drain cut-OFF current  
V
V
= 0 V  
(BR) GSS  
DS  
= 800 V, V  
I
V
= 0 V  
100  
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
1000  
2.0  
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
4.0  
1.7  
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 4 A  
1.4  
6.0  
2000  
30  
Ω
S
DS (ON)  
Y ⎪  
D
= 20 V, I = 4 A  
2.0  
fs  
D
C
C
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
200  
oss  
Rise time  
t
r
20  
40  
30  
10 V  
GS  
0 V  
I = 4 A  
D
V
V
OUT  
Turn-ON time  
t
on  
R
= 100 Ω  
L
Switching time  
Fall time  
ns  
t
f
V
400 V  
DD  
Duty 1%, t = 10 μs  
w
Turn-OFF time  
t
100  
65  
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
400 V, V  
= 10 V, I = 8 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
40  
25  
gs  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
8
24  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 8 A, V  
= 8 A, V  
= 0 V  
1.9  
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
1600  
24  
ns  
μC  
rr  
dI /dt = 100 A/μs  
DR  
Q
rr  
Marking  
TOSHIBA  
K2613  
Note 4: A line under a Lot No. identifies the indication of product  
Labels.  
Part No. (or abbreviation code)  
Lot No.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
Note 4  
Please contact your TOSHIBA sales representative for details as to  
environmental matters such as the RoHS compatibility of Product.  
The RoHS is the Directive 2002/95/EC of the European Parliament  
and of the Council of 27 January 2003 on the restriction of the use of  
certain hazardous substances in electrical and electronic equipment.  
2
2010-01-29  
2SK2613  
I
– V  
I
– V  
D
DS  
D
DS  
10  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Common source  
Tc = 25°C  
Pulse test  
15  
15  
10  
6.0  
10  
6.5  
5.75  
Pulse test  
6.25  
6.0  
5.5  
6
5.25  
5.75  
5.5  
5.25  
4
5.0  
2
4
V
= 4.75 V  
GS  
V
= 5.0 V  
GS  
0
0
0
4
8
12  
16  
0
20  
40  
60  
80  
20  
100  
Drain-source voltage  
V
DS  
(V)  
Drain-source voltage  
V
DS  
(V)  
I
D
– V  
V
– V  
DS GS  
GS  
20  
16  
12  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Common source  
= 20 V  
V
SD  
Pulse test  
Pulse test  
I
= 8 A  
D
25  
4
2
4
4
100  
4
Tc = −55°C  
0
0
0
2
6
8
0
4
8
12  
16  
10  
20  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
Y ⎪ − I  
fs  
D
100  
10  
1
Common source  
= 20 V  
V
SD  
Pulse test  
R
I  
DS (ON)  
D
10  
Common source  
Tc = 25°C  
5
3
Pulse test  
25  
Tc = −55°C  
100  
V
= 10,15  
GS  
1
0.5  
0.3  
0.1  
0.1  
0.1  
0.1  
0.3  
1
3
10  
30  
1
10  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2010-01-29  
2SK2613  
R
Tc  
I
V  
DR DS  
DS (ON)  
5
4
3
2
1
100  
10  
Common source  
= 10 V  
V
GS  
Pulse test  
1
I
= 8 A  
D
4
2
10  
0.1  
0.01  
3
1
V
= 0, 1 V  
GS  
0
80  
40  
0
40  
80  
0
0.2  
0.4  
0.6  
0.8  
1.0  
160  
1.2  
Case temperature  
Tc (°C)  
Drain-source voltage  
V
DS  
(V)  
Capacitance – V  
V
Tc  
th  
DS  
10000  
5
4
3
2
1
0
Common source  
= 10 V  
V
I
DS  
= 1 mA  
D
C
iss  
Pulse test  
1000  
100  
10  
C
oss  
Common source  
VGS = 0 V  
f = 1 MHz  
Tc = 25°C  
C
rss  
0.1  
1
10  
100  
1000  
Drain-source voltage  
V
(V)  
DS  
80  
40  
0
40  
80  
120  
160  
Case temperature Tc (°C)  
Dynamic input/output characteristics  
P
Tc  
D
200  
160  
120  
80  
500  
20  
Common source  
I
= 8 A  
D
Tc = 25°C  
Pulse test  
400  
300  
200  
100  
0
16  
12  
8
V
= 100 V  
DD  
V
DS  
200  
400  
V
GS  
40  
4
0
0
0
100  
40  
80  
120  
160  
200  
0
20  
40  
60  
80  
Total gate charge  
Q
(nC)  
Case temperature  
Tc (°C)  
g
4
2010-01-29  
2SK2613  
r
th  
t  
w
10  
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.01  
0.05  
0.02  
P
DM  
0.01  
Single pulse  
t
T
Duty = t/T  
R
= 0.833°C/W  
th (ch-c)  
0.001  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(s)  
w
Safe operating area  
E
– T  
AS  
ch  
100  
1000  
800  
600  
400  
200  
0
50  
30  
I
max (pulsed) *  
D
100 μs *  
1 ms *  
I
max (continuous)  
D
10  
5
3
DC Operation  
Tc = 25°C  
1
0.5  
0.3  
0.1  
*
Single nonrepetitive pulse  
Tc = 25°C  
0.05  
0.03  
Curves must be derated linearly  
with increase in temperature.  
V
max  
DSS  
25  
50  
75  
100  
125  
150  
0.01  
Channel temperature (initial) Tch (°C)  
1
3
10  
30  
100  
300 1000 3000 10000  
Drain-source voltage  
V
DS  
(V)  
B
VDSS  
15 V  
I
AR  
15 V  
V
V
DS  
DD  
Test circuit  
Waveform  
1
2
B
VDSS  
2
R
V
= 25 Ω  
G
=
LI ⋅  
Ε
AS  
V
DD  
= 90 V, L = 26.3 mH  
B
VDSS  
DD  
5
2010-01-29  
2SK2613  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR  
APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2010-01-29  

相关型号:

2SK2613_06

Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA

2SK2613_10

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA

2SK2614

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA

2SK2614(SM)

TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-252AA
TOSHIBA

2SK2614_06

Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
TOSHIBA

2SK2614_09

Chopper Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA

2SK2615

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA

2SK2615(TE12L)

TRANSISTOR 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-5K1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA

2SK2615(TE12L,F)

TRANSISTOR 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-5K1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA

2SK2615(TE12L,Q)

Small Signal Field-Effect Transistor
TOSHIBA

2SK2615TE12LF

DC−DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA

2SK2615_06

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA