2SK2845(SM) [TOSHIBA]
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1A I(D),TO-251AA;
| 型号： | 2SK2845(SM) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1A I(D),TO-251AA |
| 文件： | 总6页 (文件大小：740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2845
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
2SK2845
Unit: mm
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z
z
z
z
Low drain−source ON-resistance
: R = 8.0 Ω (typ.)
DS (ON)
High forward transfer admittance
: |Y | = 0.9 S (typ.)
fs
Low leakage current : I
DSS
= 100 µA (max) (V
= 720 V)
DS
Enhancement mode : V = 2.0~4.0 V (V
th DS
= 10 V, I = 1 mA)
D
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain−source voltage
Symbol
Rating
Unit
V
900
900
±30
1
V
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
DGR
GS
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
JEDEC
JEITA
―
I
3
DP
SC-64
2-7B5B
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
P
40
W
D
AS
AR
TOSHIBA
E
324
mJ
(Note 2)
Weight: 0.36 g (typ.)
Avalanche current
I
1
4.0
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
3.125
125
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
JEDEC
―
Thermal resistance, channel to
ambient
R
JEITA
SC-64
TOSHIBA
2-7B7B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 594 mH, R = 25 Ω, I
Weight: 0.36 g (typ.)
V
DD
= 1 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2SK2845
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= ±30 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
—
±30
—
—
—
—
±10
—
µA
V
GSS
GS
DS
Gate−source breakdown voltage
V
V
I = ±10 µA, V = 0 V
G DS
(BR) GSS
Drain cutoff current
I
V
DS
= 720 V, V = 0 V
GS
100
µA
DSS
Drain−source breakdown
I
= 10 mA, V
= 0 V
900
—
—
V
(BR) DSS
D
GS
voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
V
V
V
V
= 10 V, I = 1 mA
2.0
—
—
8.0
0.9
350
8
4.0
9.0
—
V
Ω
S
th
DS
GS
DS
D
R
= 10 V, I = 0.5 A
D
DS (ON)
|Y |
= 20 V, I = 0.5 A
0.45
—
fs
D
C
C
—
iss
V
DS
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
rss
C
oss
—
40
—
Rise time
t
—
—
—
20
70
30
—
—
—
r
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
95
15
—
—
off
Total gate charge (gate−source
plus gate−drain)
Q
g
V
DD
≈ 400 V, V
= 10 V, I = 1 A
nC
GS
D
Gate−source charge
Q
—
—
6
9
—
—
gs
Gate−drain (“Miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
—
Max
1
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
3
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 1 A, V
= 1 A, V
= 0 V
—
—
—
—
750
3
−1.9
—
V
DSF
DR
DR
GS
t
ns
µC
rr
= 0 VdI / dt = 100 A / µs
GS
DR
Q
—
rr
Marking
K2845
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-10
2SK2845
3
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2SK2845
4
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2SK2845
R
V
= 25 Ω
G
1
2
B
⎛
⎜
⎞
⎟
VDSS
E
=
⋅L⋅I2 ⋅
AS
= 90 V, L = 594 mH
DD
B
− V
DD
VDSS
⎝
⎠
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2006-11-10
2SK2845
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6
2006-11-10
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