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2SK2856 [TOSHIBA]

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS); N沟道单栅极调制DOPE TYPE（ UHF波段低噪声放大器应用）
2SK2856
元器件型号： 2SK2856
生产厂家： TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述和应用：

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
N沟道单栅极调制DOPE TYPE（ UHF波段低噪声放大器应用）

栅极 放大器
PDF文件： 总4页 (文件大小：236K)
下载文档：  下载PDF数据表文档文件
型号参数：2SK2856参数
 查看货源

2SK2857

 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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149 NEC

2SK2857

 MOS Field Effect Transistor

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38 KEXIN

2SK2857

 Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX

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33 TYSEMI

2SK2857

 Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 NEC

2SK2857-AZ

 Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK2857C

 N-CHANNEL MOSFET FOR SWITCHING

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2 RENESAS

2SK2857C-T1-AY

 N-CHANNEL MOSFET FOR SWITCHING

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0 RENESAS

2SK2857C-T1-AZ

 N-CHANNEL MOSFET FOR SWITCHING

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1 RENESAS

2SK2857-T1-AY

 TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),SOT-89

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1 RENESAS

2SK2858

 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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162 NEC

2SK2858

 Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN

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6 NEC

2SK2858-A

 暂无描述

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0 NEC

2SK2858-T1

 Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN

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2 NEC

2SK2858-T1-AT

 TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70

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2 RENESAS

2SK2859

 Ultrahigh-Speed Switching Applications

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45 SANYO
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