2SK3373 [TOSHIBA]
Switching Regulator and DC-DC Converter Applications Motor Drive Applications; 开关稳压器和DC- DC转换器应用电机驱动应用
| 型号： | 2SK3373 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 文件： | 总7页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3373
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
= 2.9 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 1.7 S (typ.)
fs
= 100 µA (max) (V
Low leakage current: I
= 500 V)
DSS
DS
Enhancement-model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
500
500
±30
2
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
DC
(Note 1)
I
D
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 ms)
(Note 1)
I
5
DP
DP
Drain current
A
JEDEC
JEITA
―
―
I
12
20
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
TOSHIBA
2-7J1B
Single pulse avalanche energy
E
112
mJ
(Note 2)
Weight: 0.36 g (typ.)
Avalanche current
I
2
2
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
-55 to150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
6.25
125
°C/W
°C/W
th (ch-c)
th (ch-a)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V = 90 V, T = 25°C (initial), L = 48.4 mH, R = 25 W, I = 2 A
DD ch AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-02
2SK3373
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
¾
±30
¾
¾
¾
±10
¾
mA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-OFF current
V
V
I = ±10 mA, V = 0 V
G DS
(BR) GSS
I
V
= 500 V, V = 0 V
GS
¾
100
¾
mA
V
DSS
DS
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
GS
500
2.0
¾
¾
(BR) DSS
D
V
V
V
V
= 10 V, I = 1 mA
¾
4.0
3.2
¾
V
th
DS
GS
DS
D
Drain-source ON resistance
R
= 10 V, I = 1 A
2.9
1.7
380
40
W
S
DS (ON)
D
ïY ï
fs
= 10 V, I = 1 A
0.8
¾
Forward transfer admittance
Input capacitance
D
C
C
¾
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
¾
¾
DS
rss
C
oss
¾
120
¾
Output capacitance
Rise time
10 V
I = 1 A
D
t
¾
¾
¾
¾
¾
15
25
20
80
9
¾
¾
¾
¾
¾
r
V
GS
V
OUT
0 V
Turn-ON time
Switching time
t
on
R
= 200 W
L
Fall time
t
f
~
-
V
200 V
DD
<
Turn-OFF time
t
Duty 1%, t = 10 ms
off
w
Total gate charge
Q
g
(gate-source plus gate-drain)
~
-
V
400 V, V
= 10 V, I = 2 A
GS D
nC
DD
Q
Q
Gate-source charge
¾
¾
5
4
¾
¾
gs
Gate-drain (“miller”) charge
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Continuous drain reverse current (Note 1)
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
2
5
DR
I
I
t = 1 ms
DRP
DRP
Pulse drain reverse current
(Note 1)
A
t = 100 ms
¾
12
-1.5
¾
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 2 A, V
= 2 A, V
= 0 V
¾
V
DSF
DR
DR
GS
GS
t
= 0 V,
1000
3.5
ns
mC
rr
dI /dt = 100 A/ms
Q
rr
¾
DR
Marking
※ Lot Number
Type
K3373
Month (starting from alphabet A)
※
Year
(last number of the christian era)
2
2002-09-02
2SK3373
I
– V
I
– V
DS
D
DS
D
2.0
1.6
1.2
0.8
0.4
0
5
4
3
2
1
0
8
Common source
Tc = 25°C
Common source
10
8
6
Tc = 25°C
7
10
pulse test
pulse test
6.5
5.5
6
5
5.5
5
4.5
V
GS
= 4 V
4.5
V
= 4 V
GS
0
2
4
6
8
10
10
10
0
10
20
30
40
50
20
10
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
- V
GS
D
V
- V
GS
DS
5
4
3
2
1
0
10
8
Common source
= 20 V
Common source
Tc = 25°C
pulse test
V
DS
pulse test
I
= 2 A
D
6
25
100
4
Tc = -55°C
1
2
0.5
0
0
2
4
6
8
0
4
8
12
16
Gate-source voltage
V
(V)
Gate-source voltage
V
D
(V)
GS
GS
R
- I
DS (ON)
ïY ï - I
fs
D
30
10
10
Common source
Tc = 25°C
Common source
= 20 V
V
DS
pulse test
Pulse test
5
3
25
5
3
Tc = -55°C
100
V
GS
= 10 V
1
0.5
1
0.3
0.2
0.5
0.1
0.3 0.5
1
3
5
0.1
0.3
0.5
1
3
5
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2002-09-02
2SK3373
R
- Tc
I
- V
DS
DS (ON)
DR
10
8
10
Common source
= 10 V
Common source
Tc = 25°C
pulse test
V
GS
pulse test
3
1
1
6
I
= 2 A
D
0.3
0.1
0.5
4
10
3
2
0.03
0.01
1
V
GS
= 0, -1 V
-0.8
0
-80
-40
0
40
80
160
0
-0.2
-0.4
-0.6
-1.0
-1.2
Case temperature
Tc (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
- Tc
th
DS
1000
5
4
3
2
1
0
Common source
= 10 V
V
DS
500
300
I
= 1 mA
D
C
iss
pulse test
100
50
30
C
oss
10
5
Common source
V
= 0 V
GS
C
rss
f = 1 MHz
Tc = 25°C
2
0.1
0.3 0.5
1
3
5
10
30 50 100
-80
-40
0
40
80
120
160
Drain-source voltage
V
(V)
Case temperature Tc (°C)
DS
Dynamic input/output characteristics
P
- Tc
D
500
20
2.0
1.6
1.2
0.8
0.4
0
Common source
I
= 2 A
D
Tc = 25°C
V
DS
pulse test
400
300
200
100
0
16
12
8
200
100
V
DD
= 400 V
V
GS
4
0
0
4
8
Total gate charge
12
16
(nC)
20
0
40
80
120
160
Tc (°C)
200
Q
Case temperature
g
4
2002-09-02
2SK3373
r
th
- t
w
3
1
Duty = 0.5
0.3
0.2
0.1
P
DM
0.1
t
0.05
0.02
Single Pulse
T
0.03
0.01
Duty = t/T
th (ch-c)
R
= 6.25°C/W
0.01
10 m
100 m
1 m
10 m
100 m
1
10
Pulse width
t
w
(S)
Safe operating area
E
- T
AS
ch
30
10
200
160
120
80
I
I
max (pulsed) *
D
D
100 ms *
1 ms *
max (pulsed) *
3
1
I
max (continuous)
D
DC operation
Tc = 25°C
0.3
0.1
40
*: Single nonrepetitive pulse
Tc = 25°C
0
25
50
75
100
125
150
00.3
00.1
Curves must be derated
linearly with increase in
temperature.
Channel temperature (initial) Tch (°C)
V
max
DSS
1
10
100
1000
Drain-source voltage
V
(V)
DS
B
VDSS
15 V
I
AR
-15 V
V
V
DS
DD
Test circuit
Wave form
æ
ö
÷
÷
ø
1
2
ç
B
R
V
= 25 W
DD
VDSS
G
=
×L×I
×
Ε
AS
ç
2
-
= 90 V, L = 48.4 mH
B
V
DD
VDSS
è
5
2002-09-02
2SK3373
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-09-02
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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