2SK3662 [TOSHIBA]
Switching Regulator, DC−DC Converter, Motor Drive Applications; 开关稳压器， DC-DC转换器，电机驱动应用
| 型号： | 2SK3662 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching Regulator, DC−DC Converter, Motor Drive Applications |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Unit: mm
Applications
·
·
·
·
Low drain-source ON resistance: R
= 9.4 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 55 S (typ.)
fs
= 100 µA (max) (V
Low leakage current: I
= 60 V)
DSS
DS
Enhancement-mode : V = 1.3 to 2.5 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
60
60
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
±20
35
I
D
DC
(Note 1)
Drain current
A
I
105
35
Pulse (Note 1)
DP
Drain power dissipation (Tc = 25°C)
P
W
mJ
A
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
204
35
SC-67
2-10R1B
(Note 2)
Avalanche current
I
TOSHIBA
Repetitive avalanche energy
Weight: 1.9 g (typ.)
E
3.5
mJ
AR
(Note 3)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
-55 to 150
stg
Thermal Characteristics
Characteristics
Symbol
Max
3.57
62.5
Unit
Thermal resistance, channel to case
R
°C/ W
°C/ W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 25 V, T = 25°C (initial), L = 227 mH, I
ch
= 35 A, R = 25 W
AR G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-01-16
2SK3662
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
60
40
1.3
¾
¾
28
¾
¾
¾
¾
¾
±10
100
¾
mA
mA
GSS
GS
DS
DS
Drain cut-off current
= 60 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
¾
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= -20 V
¾
¾
V
V
V
V
V
= 10 V, I = 1 mA
¾
2.5
19
th
DS
GS
GS
DS
D
= 4 V, ID = 18 A
12.5
9.4
55
Drain-source ON resistance
R
mW
S
DS (ON)
= 10 V, I = 18 A
12.5
¾
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 18 A
D
C
C
5120
300
500
¾
iss
V
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
¾
DS
rss
C
oss
¾
I
= 18 A
Rise time
t
r
¾
¾
¾
¾
¾
6
19
20
115
91
¾
¾
¾
¾
¾
D
10 V
V
OUT
GS
0 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
V
≈ 30 V
DD
Duty ≤ 1%, t = 10 ms
Turn-off time
t
w
off
Total gate charge
Q
g
(gate-source plus gate-drain)
V
I
≈ 48 V, V
= 10 V,
GS
DD
nC
= 35 A
Gate-source charge
Q
Q
¾
¾
70
21
¾
¾
D
gs
Gate-drain (“miller”) charge
gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
¾
Typ.
¾
Max
35
Unit
A
Continuous drain reverse current
I
¾
¾
DR
(Note 1)
(Note 1)
Pulse drain reverse current
I
¾
¾
105
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 35 A, V = 0 V
GS
¾
¾
¾
¾
60
58
-1.5
¾
V
ns
nC
DS2F
DR1
t
= 35 A, V = 0 V,
rr
DR
DR
GS
dI /dt = 50 A/ms
Q
rr
¾
Marking
Type
K3662
※ Lot Number
※
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2003-01-16
2SK3662
I
– V
I
– V
DS
D
6
DS
4
D
4
40
30
20
10
0
100
80
60
40
20
0
6
Common source
Tc = 25°C
Pulse test
10
3.5
4.2
8
10
3.8
3.3
3.6
3.4
V
= 3 V
GS
Common source
Tc = 25°C
Pulse test
V
GS
= 3 V
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0
Common source
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
V
DS
I
= 35 A
D
17
9
100
25
Tc = -55°C
0
1
2
3
4
5
0
4
8
12
16
20
Gate-source voltage
V
(V)
Gate-source voltage
V
D
(V)
GS
GS
ïY ï – I
fs
D
R
– I
DS (ON)
300
100
50
30
Common source
Common source
Tc = 25°C
V
= 10 V
DS
Pulse test
Pulse test
Tc = −55°C
4
10
50
30
25
100
V
GS
= 10 V
5
3
10
5
1
1
3
5
10
30
50
100
1
3
5
10
30
50
100
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2003-01-16
2SK3662
R
– Tc
I
– V
DR DS
DS (ON)
25
20
15
10
5
100
10
1
Common source
Pulse test
17 A, 9 A
10
5
I
= 35 A
D
3
V
GS
= 4 V
V
D
= 10 V
GS
= 35 A, 17 A, 9 A
I
Common source
Tc = 25°C
Pulse test
V
GS
= 0 V
0
-80
-40
0
40
80
120
160
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Drain-source voltage (V)
Case temperature Tc (°C)
V
DS
Capacitance – V
V
– Tc
th
DS
10000
1000
100
5
4
3
2
1
0
Common source
= 10 V
V
DS
= 1 mA
C
iss
I
D
Pulse test
C
oss
C
rss
Common source
= 0 V
V
GS
f = 1 MHz
Ta = 25°C
-80
-40
0
40
80
120
160
10
Case temperature Tc (°C)
0.1
1
10
100
Drain-source voltage
V
(V)
DS
P
– Tc
Dynamic input/output characteristics
D
40
30
20
10
0
80
16
Common source
= 10 A
Common source
V
I
= 35 A
D
DS
I
= 1 mA
Tc = 25°C
D
Pulse test
Pulse test
60
40
20
0
12
8
V
DS
12
24
V
DD
= 48 V
4
V
GS
0
0
40
80
120
160
0
40
80
120
160
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2003-01-16
2SK3662
r
th
– t
w
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
0.05
0.02
P
DM
0.03
0.01
0.00
t
0.01
Single pulse
T
Duty = t/T
th (ch-c)
R
= 3.57°C/W
10 m
100 m
1 m
10 m
100 m
1
10
Pulse width
t
w
(S)
Safe operating area
E
– T
AS ch
300
100
250
I
max (pulsed)*
D
200
150
100
50
t = 1 ms*
I
max (continuous)
D
30
10
t = 10 ms*
3
1
0
* Single nonrepetitive pulse
Tc = 25°C
25
50
75
100
125
(°C)
150
0.3
0.1
Channel temperature (initial)
T
ch
Curves must be derated linearly
with increase in temperature.
V
DSS
max
0.1
1
10
100
B
VDSS
Drain-source voltage
V
(V)
DS
15 V
I
AR
-15 V
V
V
DD
DS
Test circuit
Waveform
æ
ö
÷
1
2
B
2
×
VDSS
R
V
= 25 W
DD
ç
G
=
×L ×I
Ε
AS
ç
÷
-
B
V
DD
= 25 V, L = 227 mH
VDSS
è
ø
5
2003-01-16
2SK3662
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2003-01-16
相关型号：
2SK3663-A
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN
NEC
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