2SK3669_06 [TOSHIBA]
Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications; 硅N沟道MOS型开关稳压器，音频放大器和电机驱动应用
| 型号： | 2SK3669_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive
Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 95 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 6 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 100 V)
DSS
DS
Enhancement mode : V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
100
100
±20
10
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Pulse (t ≤ 10 ms)
w
I
15
DP
Drain current
A
(Note 1)
Pulse (t ≤ 1 ms)
w
IDP
28
20
280
10
2
JEDEC
JEITA
―
―
(Note 1)
Drain power dissipation (Tc = 25°C)
P
D
W
mJ
A
Single-pulse avalanche energy
TOSHIBA
2-7J1B
E
AS
AR
(Note 2)
Weight: 0.36 g (typ.)
Avalanche current
I
Repetitive avalanche energy
E
mJ
AR
(Note 3)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
6.25
125
°C/ W
°C/ W
th (ch−c)
R
th (ch−a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 3.44 mH, I = 10 A, R = 25 Ω
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-20
2SK3669
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= 100 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±100
100
⎯
nA
μA
V
GSS
GS
DS
DS
Drain cutoff current
I
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
100
3.0
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
5.0
125
⎯
V
th
DS
GS
DS
D
R
= 10 V, I = 5 A
95
6
mΩ
S
DS (ON)
|Y |
D
= 10 V, I = 5 A
3
fs
D
C
C
⎯
480
9
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
220
⎯
oss
I
= 10 A
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
2
12
2
⎯
⎯
⎯
⎯
⎯
D
10 V
GS
0 V
V
OUT
V
Turn-on time
Switching time
t
on
Fall time
t
f
V
≈ 50 V
DD
Duty ≤ 1%, t = 10 μs
Turn-off time
t
12
8.0
w
off
Total gate charge
(gate-source plus gate-drain)
Q
g
V
I
≈ 80 V, V
= 10 V,
GS
DD
= 10 A
nC
Gate-source charge
Q
gs
⎯
⎯
5.6
2.4
⎯
⎯
D
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
⎯
Typ.
⎯
Max
10
Unit
A
Continuous drain reverse current
I
⎯
⎯
⎯
DR
(Note 1)
Pulse drain reverse current
I
⎯
⎯
15
A
DRP
(t ≤ 10 ms) (Note 1)
w
Pulse drain reverse current
(t ≤ 1 ms) (Note 1)
I
⎯
⎯
28
A
DRP
w
Forward voltage (diode)
V
I
I
= 10 A, V
= 0 V
⎯
⎯
⎯
⎯
65
90
−1.7
⎯
V
DS2F
DR1
GS
= 0 V,
GS
Reverse recovery time
t
ns
nC
rr
= 10 A, V
DR
dI /dt = 50 A/μs
DR
Reverse recovery charge
Q
rr
⎯
Marking
K3669
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20
2SK3669
I
– V
I – V
D DS
D
DS
9
10
8
20
16
12
8
Common source
Tc = 25°C
Pulse test
Common source
9.5
8.5
10
9
Tc = 25°C
Pulse test
8
15
10
8.5
15
7.5
7
6
8
4
7.5
V
= 6.5 V
GS
2
4
V
= 6.5 V
GS
0
0
0
0
0.4
0.8
1.2
1.6
2.0
2
4
6
8
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
20
16
12
8
2.0
1.6
1.2
0.8
0.4
0
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
I
= 10 A
D
Ta = −55°C
100
5
4
100
2.5
25
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
D
(V)
GS
⎪Y ⎪ – I
fs
R
– I
DS (ON)
D
50
30
5
3
Common source
Tc = 25°C
Pulse test
10
1
Tc = −55°C
5
3
0.5
0.3
100
25
V
= 10 V
GS
1
0.1
15
0.5
0.3
0.05
0.03
Common source
V
= 10 V
DS
Pulse test
0.1
0.1
0.01
0.1
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2006-11-20
2SK3669
R
– Tc
I
– V
DR DS
DS (ON)
250
200
150
100
50
100
10
1
Common source
= 10 V
V
GS
Pulse test
I
= 10 A
D
5 A
10
2.5
3
Common source
Tc = 25°C
1
V
= 0, −1 V
GS
Pulse test
0.1
0
0
−80
−40
0
40
80
120
160
0.5
1
1.5
2
2.5
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
3000
10
8
Common source
= 10 V
V
DS
= 1 mA
1000
500
I
D
C
iss
Pulse test
300
6
100
C
oss
50
30
4
Common source
Tc = 25°C
10
2
f = 1 MHz
5
3
V
= 0 V
GS
C
rss
0.1
0.3
1
3
10
30
100
300
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
P
– Tc
Dynamic input/output characteristics
D
25
20
15
10
5
100
80
60
40
20
0
25
Common source
I
= 10 A
D
V
V
= 80 V
DS
DD
20
15
10
5
Tc = 25°C
Pulse test
V
GS
0
20
0
0
40
80
120
160
0
5
10
15
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2006-11-20
2SK3669
r
th
– t
w
3
1
Duty = 0.5
0.2
0.1
0.1
0.05
P
DM
0.02
0.01
t
T
0.01
Single pulse
Duty = t/T
R
= 6.25°C/W
th (ch-c)
0.003
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
– T
ch
AS
100
10
300
I
max (pulsed)*
D
100 μs*
1 ms*
240
180
120
60
I
max (continuous)
D
10 ms*
5
3
1
0.5
0.3
0.1
* Single nonrepetitive pulse
Tc = 25°C
0
25
50
75
100
125
150
0.05
0.03
Curves must be derated
linearly with increase in
temperature.
Channel temperature (initial)
T
(°C)
ch
V
max
DSS
30
0.01
0.1
0.3
1
3
10
100
300
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
I
AR
−15 V
V
V
DD
DS
Test circuit
Waveform
⎛
⎜
⎞
⎟
1
B
2
VDSS
R
V
= 25 Ω
G
=
⋅L ⋅I ⋅
Ε
AS
⎜
⎝
⎟
⎠
2
−
B
V
= 50 V, L = 3.44 mH
VDSS
DD
DD
5
2006-11-20
2SK3669
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-20
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