2SK3757
更新时间：2024-09-18 06:34:53
品牌：TOSHIBA
描述：Silicon N-Channel MOS Type Switching Regulator Applications
概述
规格参数
数据手册2SK3757 概述
Silicon N-Channel MOS Type Switching Regulator Applications 硅N沟道MOS型开关稳压器的应用 功率场效应晶体管
2SK3757 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | End Of Life | 零件包装代码： | SC-67 |
| 包装说明： | LEAD FREE, 2-10U1B, SC-67, 3 PIN | 针数： | 3 |
| Reach Compliance Code： | unknown | 风险等级： | 5.35 |
| Is Samacsys： | N | 雪崩能效等级（Eas）： | 103 mJ |
| 外壳连接： | ISOLATED | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 450 V | 最大漏极电流 (Abs) (ID)： | 2 A |
| 最大漏极电流 (ID)： | 2 A | 最大漏源导通电阻： | 2.45 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PSFM-T3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 30 W |
| 最大脉冲漏极电流 (IDM)： | 5 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
2SK3757 数据手册
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PDF下载2SK3757
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 1.9 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 1.0 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 450 V)
DSS
DS
Enhancement model: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
450
450
±30
2
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
1: Gate
Pulse (Note 1)
I
5
DP
2: Drain
3: Source
Drain power dissipation (Tc = 25°C)
P
30
W
D
AR
AR
Single pulse avalanche energy
JEDEC
JEITA
−
E
103
mJ
(Note 2)
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Avalanche current
I
2
3
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
4.17
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2:
V
DD
= 90 V, T = 25°C (initial), L = 42.8 mH, R = 25 Ω, I
= 2 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
3
1
2006-11-06
2SK3757
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Gate -source breakdown voltage
Drain cutoff current
V
V
= 0 V
(BR) GSS
DS
= 450 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
450
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
2.45
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 1 A
1.9
1.0
330
4
Ω
S
DS (ON)
⎪Y ⎪
D
= 10 V, I = 1 A
0.28
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
45
⎯
oss
Rise time
t
r
⎯
⎯
⎯
⎯
15
25
20
80
⎯
⎯
⎯
⎯
10 V
I
= 1 A
D
V
GS
0 V
V
OUT
Turn-on time
Switching time
t
on
R
= 200 Ω
L
ns
Fall time
t
f
∼
V
200 V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
off
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
9
5
4
⎯
⎯
⎯
g
∼
V
360 V, V
= 10 V, I = 2 A
nC
Q
DD
GS
D
gs
gd
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
5
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 2 A, V
= 2 A, V
= 0 V
⎯
−1.5
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
1000
5.0
ns
μC
rr
dI /dt = 100 A/μs
Q
⎯
DR
rr
Marking
K3757
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
2SK3757
I
– V
I – V
D DS
D
DS
5
4
3
2
1
0
2
1.6
1.2
0.8
0.4
0
COMMON
SOURCE
COMMON
SOURCE
8.0
7.25
8.0
6.0
TＣ = 25℃
TＣ = 25℃
10
7.0
PULSE TEST
PULSE TEST
6.75
5.75
5.5
10
6.5
6.0
5.25
5.0
5.5
VＧＳ = 4.5V
VＧＳ = 5.0V
0
2
4
6
8
10
0
10
DRAIN−SOURCE VOLTAGE V
DS
20
30
40
(V)
50
DRAIN−SOURCE VOLTAGE
V
(V)
DS
V
– V
GS
I
– V
DS
D
GS
10
8
5
4
3
2
1
0
COMMON SOURCE
COMMON SOURCE
Ｃ = 25℃
PULSE TEST
V
ＤＳ = 20V
T
PULSE TEST
6
IＤ = 2.0A
4
100
25
1.0
0.5
2
TＣ = -55℃
0
0
4
8
12
16
(V)
20
0
2
4
6
8
10
GATE−SOURCE VOLTAGE
V
GS
(V)
GATE−SOURCE VOLTAGE V
GS
R
– I
D
DS (ON)
⎪Y ⎪ – I
fs
D
30
10
10.0
COMMON SOURCE
VＤＳ = 20V
COMMON SOURCE
Tc = 25°C
PULSE TEST
PULSE TEST
TＣ = -55℃
25
5
3
100
1.0
V
= 10, 15 V
GS
1
0.5
0.1
0.3
0.5
3
5
10
0.1
1
0.1
1
10
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
3
2006-11-06
2SK3757
R
– Tc
I
– V
DS (ON)
DR
DS
10
8
10
COMMON SOURCE
COMMON SOURCE
Tc = 25°C
V
= 10 V
GS
PULSE TEST
3
1
PULSE TEST
6
1.0
0.3
I
= 2 A
D
4
0.5
10
0.1
3
2
0.03
1
V
= 0, −1 V
−0.8
GS
V
0
−80
0.01
−40
0
40
80
0
−0.2
−0.4
−0.6
120
160
−1.0
CASE TEMPERATURE Tc (°C)
DRAIN−SOURCE VOLTAGE
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
1000
5
4
3
2
1
0
COMMON SOURCE
= 10 V
V
I
Ciss
DS
= 1 mA
D
PULSE TEST
100
10
1
Coss
Crss
COMMON SOURCE
VＧＳ = 0V
f = 1MHz
Tc = 25℃
−80
−40
0
40
80
120
160
0.1
1
10
100
DRAIN−SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
P
– Tc
D
50
500
20
COMMON SOURCE
I
= 2 A
D
Tc = 25°C
PULSE TEST
40
30
20
10
0
400
300
200
100
0
16
12
8
V
DS
180
90
V
= 360 V
DS
V
6
GS
4
0
14
0
40
80
120
160
200
0
2
4
8
10
12
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2006-11-06
2SK3757
r
th
– t
w
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
0.05
0.02
P
DM
0.03
0.01
t
0.01
SINGLE PULSE
T
Duty = t/T
R
= 4.17°C/W
th (ch-c)
0.003
10 μ
100 μ
1 m
10 m
100 m
1
10
PULSE WIDTH
t
w
(S)
SAFE OPERATING AREA
E – T
AS ch
10
200
I
max (PULSE) *
D
100 μs *
160
120
80
3
1
I
max (CONTINUOUS)
D
1 ms *
DC OPERATION
Tc = 25°C
0.3
0.1
40
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
* SINGLE NONPETITIVE PULSE
Tc = 25°C
0.03
0.01
V
max
Curves must be derated linearly with
increase in temperature
DSS
B
VDSS
15 V
−15 V
I
1
10
100
1000
AR
DRAIN−SOURCE VOLTAGE
V
(V)
DS
V
V
DS
DD
TEST CIRCUIT
WAVE FORM
⎛
⎜
⎜
⎝
⎞
1
2
B
VDSS
2
R
V
= 25 Ω
G
⎟
⎟
⎠
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 42.8 mH
B
VDSS
DD
5
2006-11-06
2SK3757
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-06
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