2SK3847(2-10S2B) [TOSHIBA]
TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power;
| 型号： | 2SK3847(2-10S2B) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain-source ON resistance
z High forward transfer admittance
: R
= 12 mΩ (typ.)
DS (ON)
: |Y | = 36 S (typ.)
fs
z Low leakage current : I
= 100 μA (max) (V
= 40 V)
DSS
DS
z Enhancement mode : V = 1.5 to 2.5 V
th
(V
DS
= 10 V, I = 1 mA)
D
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
V
40
40
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
±20
32
V
GSS
DC (Note 1)
I
D
A
Drain current
JEDEC
JEITA
―
―
Pulse (Note 1)
I
96
A
DP
Drain power dissipation (Tc=25°C)
Single-pulse avalanche energy
P
30
W
D
AS
AR
TOSHIBA
2-10S1B
E
47
mJ
(Note 2)
Weight: 1.5 g (typ.)
Avalanche current
I
32
3
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55~150
stg
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
4.17
83.3
°C/W
°C/W
th (ch−c)
th (ch−a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
R
= 25 V, T = 25°C (initial), L = 48 μH,
ch
DD
= 25 Ω, I
= 32 A
AR
G
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature
JEDEC
JEITA
―
―
This transistor is an electrostatic-sensitive device. Handle with care.
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29
2SK3847
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
Drain cutoff current
I
V
V
= ±16 V, V = 0 V
DS
—
—
40
15
1.5
—
—
18
—
—
—
—
—
±10
100
—
μA
μA
GSS
GS
DS
I
= 40 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
—
(BR) DSS
(BR) DSX
D
D
Drain−source breakdown voltage
Gate threshold voltage
V
V
= −20 V
—
—
V
V
V
V
V
= 10 V, I = 1 mA
—
2.5
26
16
—
th
DS
GS
GS
DS
D
= 4.5 V, I = 16 A
19
D
Drain−source ON resistance
R
mΩ
S
DS (ON)
= 10 V, I = 16 A
12
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 16 A
36
D
C
C
1980
210
300
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
DS
rss
C
—
oss
Rise time
t
r
—
—
—
7
—
—
—
I
= 16 A
D
10 V
GS
Output
V
0 V
Turn−on time
t
22
10
on
Switching time
ns
Fall time
t
f
V
≈ 20 V
DD
Turn−off time
t
—
—
60
40
—
—
off
Duty ≤ 1%, tw = 10 μs
Total gate charge (gate−source
plus gate−drain)
Q
g
V
≈ 32 V, V
= 10 V, I = 32 A
nC
DD
GS
D
Gate−source charge
Q
—
—
28
12
—
—
gs
Gate−drain (“Miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
—
Max
32
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
96
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 32 A, V
= 32 A, V
= 0 V
= 0 V
—
—
—
—
40
24
−1.5
—
V
DSF
DR
DR
GS
GS
t
ns
nC
rr
dl /dt = 50 A/μs
DR
Qrr
—
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
K3847
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4
2
2009-09-29
2SK3847
I
– V
I
– V
DS
D
DS
D
5
20
16
12
8
100
80
60
40
20
0
4.25
Common source
Tc = 25°C
Pulse test
10
6
Common source
Tc = 25°C
Pulse test
5.5
10
8
8
4
6
3.75
3.5
5.5
5
4.75
4.75
4.5
4.5
4.25
4
3.25
3.75
4
V
= 3 V
V
= 3 V
GS
GS
3.5
3.25
0
0
0.1
0.2
0.3
0.4
0.5
0
0
1
2
4
6
8
10
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0
Common source
Tc = 25°C
Pulse test
Common source
= 10 V
V
DS
Pulse test
I
= 32 A
D
25
16
8
Tc = −55°C
100
0
2
4
6
8
10
4
8
12
16
20
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
R
− I
DS (ON)
D
⎪Y ⎪ − I
fs
D
1000
100
10
100
Common source
Tc = 25°C
Common source
= 10 V
V
DS
Pulse test
Pulse test
Tc = −55°C
100
25
10
V
= 4.5 V
GS
10
1
1
10
100
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2009-09-29
2SK3847
R
− Tc
I
− V
DR DS
DS (ON)
50
40
30
20
10
0
100
Common source
Pulse test
10
I
= 32 A
D
5
16
3
10
8
V
V
= 4.5 V
GS
1
V
= 0, −1 V
GS
I
= 32, 16, 8 A
D
Common source
Tc = 25°C
= 10 V
GS
Pulse test
1
−80
−40
0
40
80
120
160
100
160
0
−0.4
−0.8
−1.2
−1.6
−2.0
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
C − V
V
− Tc
th
DS
10000
1000
100
5
4
3
2
1
0
Common source
= 10 V
Common source
= 0 V
V
I
DS
= 1 mA
V
GS
D
f = 1 MHz
Tc = 25°C
Pulse test
C
iss
C
oss
C
rss
0.1
1
10
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
− Tc
D
50
40
30
20
10
0
50
20
Common source
I
= 32 A
D
Tc = 25°C
Pulse test
40
30
20
10
16
12
8
V
DS
16
8
V
= 32 V
DS
4
V
GS
0
0
0
0
40
80
120
20
40
60
80
100
Case temperature Tc (°C)
Total gate charge
Q
g
(nC)
4
2009-09-29
2SK3847
r
th
− t
w
10
1
Duty = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
t
Single pulse
T
Duty = t/T
R
= 4.17°C/W
th (ch-c)
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(s)
w
Safe operating area
E
– T
AS
ch
1000
100
10
100
80
60
40
20
0
I
max (pulse) *
D
1 ms *
I
max (continuous)
D
10 ms *
DC operation
Tc = 25°C
25
50
75
100
125
ch
150
1
*
Single nonrepetitive pulse
Channel temperature (initial)
T
(°C)
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
B
VDSS
15 V
V
max
DSS
0.1
0.1
I
AR
0 V
1
10
100
V
V
DD
DS
B
Drain−source voltage
V
(V)
DS
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 25 V, L = 48 μH
B
VDSS
DD
5
2009-09-29
2SK3847
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2009-09-29
相关型号：
2SK385
TRANSISTOR 10 A, 400 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
TOSHIBA
2SK3857MFV-A
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3857MFV-B
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明