概述
数据手册2SK3880_09 概述
Switching Regulator Applications 开关稳压器的应用
2SK3880_09 数据手册
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PDF下载2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 1.35 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 5.2 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 640 V)
DSS
DS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
800
800
±30
6.5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
19.5
80
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AR
AR
JEDEC
JEITA
―
―
Single pulse avalanche energy
E
375
mJ
(Note 2)
TOSHIBA
2-16F1B
Avalanche current
I
6.5
8
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
Weight: 5.8 g (typ.)
AR
T
ch
150
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
1.56
41.6
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: = 90 V, T = 25°C (initial), L = 16.1 mH, R = 25 Ω, I = 6.5 A
V
DD
ch
G
AR
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
2SK3880
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Drain-source breakdown voltage
Drain cutoff current
V
V
= 0 V
(BR) GSS
DS
= 640 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
800
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
1.7
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 3.5 A
1.35
5.2
1500
25
Ω
S
DS (ON)
⎪Y ⎪
D
= 20 V, I = 3.5 A
2.5
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
140
⎯
oss
Rise time
t
r
⎯
⎯
⎯
35
80
50
⎯
⎯
⎯
10 V
GS
0 V
I
= 3.5 A
V
OUT
D
V
Turn-on time
Switching time
t
on
R = 114 Ω
L
ns
∼
V
400 V
DD
Fall time
t
f
Duty ≤ 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
220
35
⎯
⎯
off
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
400 V, V
= 10 V, I = 6.5 A
nC
DD
GS
D
Gate-source charge
Q
⎯
⎯
22
13
⎯
⎯
gs
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6.5
19.5
−1.7
⎯
A
A
Continuous drain reverse current (Note 1)
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 6.5 A, V
= 6.5 A, V
= 0 V
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
1200
11.5
ns
μC
rr
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA
K3880
Part No. (or abbreviation code)
Lot No.
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4
2
2009-09-29
2SK3880
I
− V
I − V
D DS
D
DS
5
4
3
2
1
0
10
8
6
COMMON SOURCE
8,10
COMMON SOURCE
8,10
6
Tc = 25°C
Tc = 25°C
PULSE TEST
PULSE TEST
5.5
5.75
6
5.25
5.5
4
5
5.25
5
2
VGS=4.5V
VGS=4.5V
8
0
0
20
DRAIN−SOURCE VOLTAGE V
DS
10
30
40
(V)
0
2
4
6
10
50
DRAIN−SOURCE VOLTAGE
V
(V)
DS
I
D
− V
V
− V
DS GS
GS
20
16
12
8
16
12
8
COMMON SOURCE
COMMON SOURCE
Tc = 25°C
V
= 20 V
DS
PULSE TEST
PULSE TEST
ID=7A
3.5
1.5
Ta=100℃
4
-55
4
25
0
0
0
2
4
6
8
10
0
4
8
12
16
(V)
20
GATE−SOURCE VOLTAGE
V
GS
(V)
GATE−SOURCE VOLTAGE V
GS
⎪Y ⎪ − I
fs
R
− I
DS (ON) D
D
100
10
1
10.00
COMMON SOURCE
COMMON SOURCE
V
= 20 V
DS
V
= 10 V
GS
Tc = 25°C
PULSE TEST
PULSE TEST
25
-55
1.00
Ta=100℃
0.10
0.1
0.01
0.1
DRAIN CURRENT
1
10
0.1
1
DRAIN CURRENT
10
100
I
(A)
I
(A)
D
D
3
2009-09-29
2SK3880
R
− Tc
I
− V
DR DS
DS (ON)
5
4
3
2
1
0
10
COMMON SOURCE
COMMON SOURCE
Tc = 25°C
V
= 10 V
GS
PULSE TEST
PULSE TEST
7
1
3
ID=1.5A
3
10
VGS=0､-1V
1
0.1
-80
-40
0
40
80
120
160
0
-0.2
-0.4
-0.6
-0.8
-1
(V)
-1.2
CASE TEMPERATURE Tc (°C)
DRAIN−SOURCE VOLTAGE
V
DS
CAPACITANCE – V
V
− Tc
th
DS
5
4
3
2
1
0
10000
1000
100
Ciss
Coss
COMMON SOURCE
COMMON SOURCE
Crss
V
= 0 V
GS
V
= 10 V
DS
f = 1 MHz
I
= 1 mA
D
PULSE TEST
Tc = 25°C
10
0.1
1
10
100
-80
-40
0
40
80
120
160
DRAIN−SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
P
− Tc
D
120
100
80
60
40
20
0
500
20
400
300
200
100
0
VDS
16
12
8
VDD=100V
200V
400V
COMMON SOURCE
I
= 6.5 A
D
4
Tc = 25°C
PULSE TEST
0
0
20
TOTAL GATE CHARGE
40
60
0
40
80
120
160
Q
g
(nC)
CASE TEMPERATURE Tc (°C)
4
2009-09-29
2SK3880
r
th
− t
w
10
1
Duty = 0.5
0.2
0.1
0.0
0.1
0.0
P
DM
t
0.0
Ｔ
0.01
SINGLE PULSE
DUTY = t/T
Ｒ th (ch-c) = 1.56°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE WIDTH
t
w
(S)
SAFE OPERATING AREA
E
– T
ch
AS
400
350
300
250
200
150
100
50
100
10
100 μs*
I
MAX (PULSED)
D
I
MAX (CONTINUOUS)
D
1 ms*
1
DC OPERATION
Tc = 25°C
* SINGLE NONREPETITIVE PULSE
Tc = 25°C
0.1
0.01
0
25
50
75
100
125
150
Curves must be derated linearly with
increase in temperature
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
V
DSS
MAX
1
10
100
1000
DRAIN−SOURCE VOLTAGE
V
(V)
DS
B
VDSS
15 V
I
AR
−15 V
V
V
DD
DS
B
TEST CIRCUIT
WAVE FORM
⎛
⎜
⎜
⎝
⎞
⎟
⎟
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 16.1 mH
B
VDSS
DD
⎠
5
2009-09-29
2SK3880
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2009-09-29
2SK3880_09 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SK3882-01 | FUJI | Power Field-Effect Transistor, 100A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, TO-247, 3 PIN | 获取价格 |
|
| 2SK3883-01 | FUJI | TO-247 | 获取价格 |
|
| 2SK3884-01 | FUJI | Power Field-Effect Transistor, 100A I(D), 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, TO-247, 3 PIN | 获取价格 |
|
| 2SK3885-01 | FUJI | TO-247 | 获取价格 |
|
| 2SK3886-01MR | FUJI | Power Field-Effect Transistor, 67A I(D), 120V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 获取价格 |
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| 2SK3887-01 | FUJI | N-CHANNEL SILICON POWER MOSFET | 获取价格 |
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| 2SK3888-01MR | FUJI | N-CHANNEL SILICON POWER MOSFET | 获取价格 |
|
| 2SK3889-01L | FUJI | N-CHANNEL SILICON POWER MOSFET | 获取价格 |
|
| 2SK3889-01S | FUJI | N-CHANNEL SILICON POWER MOSFET | 获取价格 |
|
| 2SK3889-01SJ | FUJI | N-CHANNEL SILICON POWER MOSFET | 获取价格 |
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