6N137-X007 [TOSHIBA]

High Speed Optocoupler, 10 Mbd; 高速光耦, 10万桶
6N137-X007
型号: 6N137-X007
厂家: TOSHIBA    TOSHIBA
描述:

High Speed Optocoupler, 10 Mbd
高速光耦, 10万桶

文件: 总8页 (文件大小:203K)
中文:  中文翻译
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6N137  
TOSHIBA Photocoupler GaAAs Ired & Photo IC  
6N137  
Degital Logic Isolation  
Tele-Communication  
Unit in mm  
Analog Data Equipment Control  
The TOSHIBA 6N137 consist of a high emitting diode and a one chip  
photo IC. This unit is 8-lead DIP package.  
LSTTL / TTL compatible: 5V Supply  
Ultra high speed: 10MBd  
Guaranteed performance over temperature: 0°C to 70°C  
High isolation voltage: 2500Vrms min.  
UL recognized: UL1577, file no. E67349  
Truth Table  
Input  
Enable  
Output  
TOSHIBA  
1110C4  
H
L
H
H
L
L
H
H
H
Weight: 0.54g  
H
L
Pin Configurations (top view)  
L
8
7
6
5
1
2
3
I
I
F
CC  
V
V
CC  
I
8
O
2
3
V
F
O
4
6
GND  
5
I
1 : N.C.  
E
7
2 : Anode  
3 : Cathode  
4 : N.C.  
V
E
5 : GND  
6 : Output(Open collector)  
7 : Enable  
8 : V  
CC  
1
2007-10-01  
6N137  
Absolute Maximum Ratings  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
20  
40  
5
mA  
mA  
V
F
Pulse forward current  
Reverse voltage  
(Note 1)  
I
FP  
V
R
Output current  
I
50  
7
mA  
V
O
Output voltage  
V
O
Supply voltage (1 minute maximum)  
V
V
7
V
CC  
Enable input voltage  
5.5  
V
EH  
(not to exceed V  
by more than 500mV)  
CC  
Output collector power dissipation  
Operating temperature range  
Storage temperature range  
P
85  
0~70  
mW  
°C  
O
T
opr  
T
55~125  
260  
°C  
stg  
sol  
Lead solder temperature (10 s)  
(Note 2)  
T
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note 1) 50% duty cycle, 1ms pulse width.  
(Note 2) Soldering portion of lead: Up to 2mm from the body of the device.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Max.  
Unit  
Input current, low level each channel  
Input current, high level each channel  
High level enable voltage  
I
0
7
250  
20  
μA  
mA  
V
FL  
I
FH  
V
2.0  
0
V
CC  
EH  
Low level enable voltage (output high)  
Supply voltage, output*  
V
0.8  
5.5  
8
V
EL  
V
4.5  
0
V
CC  
Fan out (TTL load)  
N
°C  
Operating temperature  
Ta  
70  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
*This item denotes operating ranges, not meaning of recommended operating conditions.  
Precaution  
Please be careful of the followings.  
A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain  
linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length  
between capacitor and coupler should not exceed 1cm.  
2
2007-10-01  
6N137  
Electrical Characteristics  
Over Recommended Temperature (Ta = 0~70°C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min.  
(**)Typ.  
1
Max.  
250  
Unit  
V
F
=5.5V, V =5.5V  
CC  
O
High level output current  
I
μA  
OH  
I =250μA, V = 2.0V  
E
V
V
=5.5V, I =5mA  
F
=2.0V  
CC  
EH  
Low level output voltage  
V
0.4  
0.6  
V
OL  
I
(sinking)=13mA  
OL  
High level enable current  
Low level enable current  
High level supply current  
I
V
V
V
V
=5.5V, V =2.0V  
1.0  
1.6  
7
2.0  
15  
mA  
mA  
mA  
EH  
CC  
CC  
CC  
CC  
E
I
=5.5V, V =0.5V  
E
EL  
I
=5.5V, I =0, V =0.5V  
F E  
CCH  
=5.5V, I =10mA  
F
Low level supply current  
I
12  
18  
mA  
CCL  
V =0.5V  
E
Resistance (inputoutput)  
V
=500V, Ta=25°C  
I O  
R
C
1012  
Ω
IO  
(Note 3)  
(Note 3)  
R.H.60%  
Capacitance (inputoutput)  
f=1MHz, Ta=25°C  
5
0.6  
1.65  
1.75  
pF  
V
IO  
Input forward voltage  
V
I =10mA, Ta=25°C  
F
F
Input reverse breakdown  
voltage  
BV  
I =10μA, Ta=25°C  
R
V
R
Input capacitance  
C
V =0, f=1MHz  
45  
pF  
%
IN  
F
Current transfer ratio  
CTR  
I =5.0mA, R =100Ω  
1000  
F
L
(**) All typical values are at V =5V, Ta=25°C  
CC  
(Note 3) Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.  
3
2007-10-01  
6N137  
Switching Characteristics (Ta = 25°C, V = 5V)  
CC  
Test  
Characteristic  
Symbol  
Test Condition  
R =350Ω, C =15pF  
Min.  
Typ.  
60  
Max.  
75  
Unit  
ns  
Circuit  
Propagation delay time to high  
output level  
L
L
t LH  
p
1
I =7.5mA  
F
Propagation delay time to  
low output level  
R =350Ω, C =15pF  
L L  
F
t HL  
p
1
60  
75  
ns  
I =7.5mA  
Output risefall time  
(1090%)  
R =350Ω, C =15pF  
L L  
F
t , t  
30  
ns  
r
f
I =7.5mA  
R =350Ω, C =15pF  
L
L
Propagation delay time of  
I =7.5mA  
F
t
t
2
2
3
3
25  
25  
ns  
ELH  
EHL  
enable from V  
to V  
V
V
=3.0V  
EH  
EL  
EH  
EL  
=0.5V  
R =350Ω, C =15pF  
L
L
Propagation delay time of  
enable from V to V  
I =7.5mA  
F
ns  
V
V
=3.0V  
EH  
EL  
EL  
EH  
=0.5V  
V
=10V  
CM  
Common mode transient  
immunity at logic high  
output level  
R =350Ω  
L
CM  
200  
500  
V / μs  
V / μs  
H
V
=2V  
O(min.)  
I =0mA  
F
V
=10V  
CM  
Common mode transient  
Immunity at logic low  
output level  
R =350Ω  
L
CM  
L
V
=0.8V  
O(max.)  
I =5mA  
F
4
2007-10-01  
6N137  
Test Circuit 1.  
5V  
t
and t  
pLH  
pHL  
Pulse  
8
1
2
VCC  
generator  
ZO = 50Ω  
tr = 5ns  
350mV(IF = 7.5mA)  
175mV(IF = 3.75mA)  
0.1μF  
R
L
Input  
7
By-  
t
pass  
pHL  
6
5
3
4
IF  
Output  
t
VOH  
CL  
pLH  
Monitoring  
V
O
monitor-  
ing  
GND  
Node  
Output V  
O
1.5V  
VOL  
node  
C is approximately 15pF which includes probe and stray wiring capacitance.  
L
Test Circuit 2.  
Input V  
Monitoring node  
E
t
and t  
ELH  
EHL  
Pulse  
generator  
ZO = 50Ω  
tr = 5ns  
5V  
8
1
2
VCC  
3.0V  
1.5V  
0.1μF  
R
L
7.5mA  
dc  
7
Input V  
E
By-  
V
O
t
pass  
EHL  
I
F
6
5
3
4
Output  
monitor-  
ing  
VOH  
VOL  
t
CL  
ELH  
GND  
Output V  
O
1.5V  
node  
C is approximately 15pF which includes prove and stray wiring capacitance.  
L
Test Circuit 3.  
Transient immunity and typical waveforms  
8
7
1
2
5V  
L
VCC  
10V  
0V  
0.1μF  
IF  
90%  
tr  
10%  
R
By-  
pass  
90%  
tf  
10%  
A
6
5
3
V
O
B
4
GND  
5V  
VO  
V
FF  
Pulse gen.  
Switch at A : IF = 0mA  
VCM  
Z
O
= 50Ω.  
VO  
VOL  
Switching at B : IF = 5mA  
5
2007-10-01  
6N137  
ΔV / ΔTa – I  
I
– V  
F
F
F
F
100  
10  
-2.6  
Ta = 25°C  
-2.4  
-2.2  
1
0.1  
-2.0  
-1.8  
-1.6  
-1.4  
0.01  
0.1  
3
1
1.0  
1.6  
0.3  
10  
30  
1.2  
1.4  
1.8  
Forward voltage  
V
(V)  
F
Forward current  
I
(mA)  
F
I
- Ta  
OH  
V
– I  
F
10  
O
V
V
V
= 1V  
F
8
6
= 5.5V  
CC  
5
3
V
= 5V  
CC  
= 5.5V  
O
Ta = 25°C  
1
R
L
350Ω  
1kΩ  
=
4
0.5  
0.3  
4kΩ  
2
0
0.1  
3
1
6
20  
40  
2
5
60  
80  
0
4
0
Forward current  
I
(mA)  
Ambient temperature Ta (°C)  
F
V
Ta  
O L  
V
– I  
F
O
I
= 5mA  
F
V
V
= 5.5V  
CC  
8
0.5  
V
= 5V  
= 2V  
CC  
E
R
L
= 350Ω  
R
L
= 4kΩ  
6
4
I
= 16mA  
OL  
0.4  
0.3  
12.8mA  
9.6mA  
Ta = 70°C  
0°C  
6.4mA  
2
0.2  
0
6
5
20  
80  
4
0
40  
1
0
2
60  
3
Forward current  
I
(mA)  
Ambient temperature Ta (°C)  
F
6
2007-10-01  
6N137  
t
t
- I  
pHL, pLH F  
t
t
- Ta  
pHL, pLH  
120  
120  
100  
R
L
4kΩ  
=
t
pLH  
tp  
LH  
RL = 4kΩ  
100  
80  
350Ω  
1kΩ  
tp  
tpLH  
1kΩ  
LH  
80  
350Ω  
350Ω  
350Ω  
tpHL tpLH  
60  
60  
40  
1kΩ  
4kΩ  
tp  
HL  
1kΩ  
4kΩ  
40  
20  
0
V
= 5V  
CC  
Ta = 25°C  
= 5V  
20  
0
I
= 7.5mA  
F
V
CC  
50  
10  
20  
60  
30  
40  
0
70  
5
7
9
11  
13  
15  
17  
19  
Forward current  
I
(mA)  
F
Ambient temperature Ta (°C)  
t
t
- T  
EHL, ELH a  
t t – T  
r, f  
a
80  
70  
320  
300  
V
V
= 5V  
= 3V  
V
I
= 5V  
CC  
EH  
CC  
= 7.5mA  
F
R
L
= 4kΩ  
t
R
L
= 4kΩ  
1kΩ  
ELH  
I
= 7.5mA  
F
t
f
280  
80  
60  
50  
40  
30  
20  
t
f
60  
40  
20  
350Ω  
350Ω  
t
f
1kΩ  
t
ELH  
t
r
350Ω  
350Ω  
t
ELH  
1kΩ  
4kΩ  
0
0
t
10  
20  
30  
40  
50  
60  
70  
EHL  
1kΩ  
4kΩ  
10  
0
Ambient temperature Ta (°C)  
70  
20  
30  
40  
50  
60  
0
10  
Ambient temperature Ta (°C)  
7
2007-10-01  
6N137  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
8
2007-10-01  

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