CMS07 [TOSHIBA]

Switching Mode Power Supply Applications Portable Equipment Battery Applications; 开关模式电源应用便携式设备电池的应用
CMS07
型号: CMS07
厂家: TOSHIBA    TOSHIBA
描述:

Switching Mode Power Supply Applications Portable Equipment Battery Applications
开关模式电源应用便携式设备电池的应用

电池 整流二极管 开关 测试 光电二极管 便携式 便携式设备
文件: 总5页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                                                        
                                                        
                                                                     
                                                                     
CMS07  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CMS07  
Switching Mode Power Supply Applications  
Portable Equipment Battery Applications  
Unit: mm  
·
·
·
·
Forward voltage: V  
= 0.45 V (max)  
Average forward current: I = 2.0 A  
FM  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“MFLATTM” (Toshiba package name)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
30  
Unit  
V
Repetitive peak reverse voltage  
V
RRM  
2.0  
I
(Note)  
F (AV)  
(Ta = 60°C)  
Average forward current  
A
2.0  
I
F (AV)  
(T= 126°C)  
Peak one cycle surge forward current  
(non-repetitive)  
I
40 (50 Hz)  
A
FSM  
JEDEC  
JEITA  
Junction temperature  
Storage temperature  
T
-40~150  
-40~150  
°C  
°C  
j
T
stg  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Note: Device mounted on a ceramic board (board size: 50 mm ´ 50 mm,  
soldering land: 2 mm ´ 2 mm)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.5 A  
= 1.0 A  
= 2.0 A  
¾
0.35  
0.38  
0.41  
3.0  
¾
¾
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
¾
¾
¾
¾
0.45  
¾
I
V
V
V
= 5 V  
RRM  
RRM  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
mA  
I
= 30 V  
30.0  
130  
500  
¾
C
j
= 10 V, f = 1.0 MHz  
R
pF  
Device mounted on a ceramic board  
¾
¾
60  
(soldering land: 2 mm ´ 2 mm)  
Thermal resistance  
Thermal resistance  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
¾
¾
¾
¾
135  
16  
(soldering land: 6 mm ´ 6 mm)  
R
¾
th (j-)  
1
2003-02-17  
CMS07  
Marking  
Following Indicates the Data  
of Manufacture  
Type code  
Lot No.  
0
5
1
6
2
7
3
8
4
9
Month of  
manufac-  
ture  
January to December  
are denoted by letter A  
to L respectively.  
S7  
Year of  
manufac-  
ture  
Last decimal digit of  
the year of  
manufacture  
Cathode mark  
Standard Soldering Pad  
Unit: mm  
1.4  
3.0  
1.4  
Handling Precaution  
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier  
products. This current leakage and improper operating temperature or voltage may cause thermal runaway.  
Please take forward and reverse loss into consideration when you design.  
2
2003-02-17  
CMS07  
i
– v  
P
– I  
F (AV) F (AV)  
F
F
100  
10  
1
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
DC  
T = 150°C  
j
a = 180°  
a = 120°  
125°C  
75°C  
a = 60°  
Rectangular  
waveform  
25°C  
0°  
a
360°  
Conduction angle: a  
0.1  
0
0.1 0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
(V)  
0.9  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
F (AV)  
2.8  
(A)  
3.2  
Instantaneous forward voltage  
v
Average forward current  
I
F
Ta max – I  
F (AV)  
Device mounted on a ceramic board  
Tmax – I  
F (AV)  
(board size: 50 mm ´
50 mm)  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
DC  
DC  
a = 60°  
a = 180°  
a = 120°  
a = 180°  
a = 120°  
Rectangular  
waveform  
Rectangular  
waveform  
60  
60  
0°  
a
360°  
40  
40  
I
a = 60°  
F (AV)  
0°  
a
360°  
Conduction angle: a  
I
F (AV)  
Conduction angle: a  
= 15 V  
20  
20  
V
R
= 15 V  
V
R
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
I
2.4  
2.8  
3.2  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
(A)  
3.2  
Average forward current  
(A)  
Average forward current  
I
F (AV)  
F (AV)  
r
– t  
th (j-a)  
500  
100  
Device mounted on a glass-epoxy board  
Soldering land: 2.1 mm ´ 1.4 mm  
Device mounted on a glass-epoxy board  
Soldering land: 6.0 mm ´ 6.0 mm  
10  
1
Device mounted on a ceramic board  
Soldering land: 2.0 mm ´ 2.0 mm  
0.5  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Time  
t (s)  
3
2003-02-17  
CMS07  
Surge forward current (non-repetitive)  
C – V  
j
(typ.)  
R
50  
40  
30  
20  
10  
0
1000  
100  
10  
f = 1 MHz  
Ta = 25°C  
Ta = 25°C  
f = 50 Hz  
1
10  
100  
Number of cycles  
1
10  
100  
Reverse voltage  
V
(V)  
R
I
– T  
(typ.)  
P – V  
R (AV)  
(typ.)  
R
j
R
100  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Rectangular  
waveform  
360°  
Pulse test  
0°  
DC  
V
= 30 V  
R
300°  
V
R
a
V
= 20 V  
R
1
Conduction angle: a  
T = 150°C  
240°  
j
V
R
= 15 V  
180°  
V
= 10 V  
R
0.1  
V
R
= 5 V  
120°  
V
= 3 V  
R
60°  
0.01  
0.001  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
10  
Reverse voltage  
20  
30  
Junction temperature  
T
(°C)  
V
(V)  
j
R
4
2003-02-17  
CMS07  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2003-02-17  

相关型号:

CMS07(T2L,TEM,Q)

Rectifier Diode
TOSHIBA

CMS07(T2L,TEMQ)

Rectifier Diode
TOSHIBA

CMS07(TE12L)

DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, M-FLAT-2, Rectifier Diode
TOSHIBA

CMS07(TE12R)

DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, M-FLAT-2, Rectifier Diode
TOSHIBA

CMS07_06

Switching Mode Power Supply Applications
TOSHIBA

CMS08

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
TOSHIBA

CMS08(TE12L)

DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
TOSHIBA

CMS08(TE12R)

DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
TOSHIBA

CMS08_06

Switching Mode Power Supply Applications
TOSHIBA

CMS09

Switching Mode Power Supply Applications Portable Equipment Battery Applications
TOSHIBA

CMS09(TE12L)

DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
TOSHIBA

CMS09(TE12R)

DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
TOSHIBA