GT30J324(Q) [TOSHIBA]

IGBT DUAL 600V 30A TO-3PN;

GT30J324(Q)


型号：	GT30J324(Q)
厂家：	TOSHIBA SEMICONDUCTOR
描述：	IGBT DUAL 600V 30A TO-3PN 双极性晶体管
文件：	总7页 (文件大小：192K)
下载：	下载PDF数据表文档文件

GT30J324_06

Silicon N Channel IGBT High Power Switching Applications

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18 TOSHIBA

GT30J341

Discrete IGBTs Silicon N-Channel IGBT

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31 TOSHIBA

GT30J341,Q

Insulated Gate Bipolar Transistor

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0 TOSHIBA

GT3-16DP-2.5DSA

Antenna, Sensor, and Communications Trunk Line Connections

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44 HRS

GT3-16DP-2.5DSA(70)

Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Terminal, Locking, Black Insulator

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0 HRS

GT3-16DP-2.5DSA(70)

Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Terminal, Locking, Black Insulator

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0 HRS

GT320

Ceramic Capacitor, Multilayer, Ceramic, 3000V, 5% +Tol, 5% -Tol, SL, 500ppm/Cel TC, 0.0002uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT

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0 CDE

GT3200

USB2.0 PJY IC

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114 SMSC

GT3200

USB2.0 PHY IC

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91 SMSC

GT3200_06

USB2.0 PHY IC

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57 SMSC

GT3200-ABZJ

USB2.0 PJY IC

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42 SMSC

GT3200-JD

USB2.0 PHY IC

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27 SMSC

GT3200-JD

USB2.0 PJY IC

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61 SMSC

GT3200-JD

USB2.0 PHY IC

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33 SMSC

GT3200-JN

USB2.0 PHY IC

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13 SMSC

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