GT5G131 [TOSHIBA]
Strobe Flash Applications; 频闪闪光灯应用
| 型号： | GT5G131 |
| 厂家： | 
TOSHIBA |
| 描述： | Strobe Flash Applications |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT5G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
Strobe Flash Applications
Unit: mm
•
•
3-V gate drive voltage: V
= 3.0 V (min) (@I = 130 A)
GE C
Supplied in compact and thin package requires only a small
mounting area
•
•
•
5th generation (trench gate structure) IGBT
Enhancement-mode
Peak collector current: I = 130 A (max)
C
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
Collector-emitter voltage
V
CES
V
GES
V
GES
400
±6
DC
Gate-emitter voltage
Pulse
V
A
±8
DC
I
5
C
Collector current
1 ms
I
130
1.1
CP
JEDEC
JEITA
―
―
Collector power dissipation
Junction temperature
(Note 1)
P
W
°C
°C
C
T
150
−55~150
j
TOSHIBA
2-6J1C
Storage temperature range
T
stg
2
Weight: 0.080 g (typ.)
Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Equivalent Circuit
8
1
7
6
3
5
4
2
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1
2002-05-17
GT5G131
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±6 V, V = 0
Min
0.5
Typ.
Max
Unit
I
I
V
V
±10
10
µA
µA
V
GES
GE
CE
CE
Collector cut-off current
= 400 V, V
= 0
GE
CES
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
V
I
I
= 1 mA, V = 5 V
1.0
7.0
GE (OFF)
C
C
CE
V
= 130 A, V
= 3 V
GE
2.2
V
CE (sat)
C
ies
V
= 10 V, V
GE
= 0, f = 1 MHz
2800
pF
CE
Rise time
t
3 V
1.3
1.4
1.5
1.8
r
0
30 Ω
Turn-on time
Switching time
t
t
on
µs
<
V
: t 100 ns
=
IN
r
f
Fall time
t
f
<
t
100 ns
=
300 V
<
Duty cycle 1%
=
Turn-off time
off
Thermal resistance
(Note 2)
R
114
°C/W
th (j-a)
2
Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Marking
GT5G131
Type
※
※ Lot Number
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2002-05-17
GT5G131
I
– V
I – V
C CE
C
CE
200
160
200
160
3.0
3.0
3.5
2.5
3.5
2.5
120
80
120
80
V
GE
= 2.0 V
V
GE
= 2.0 V
40
0
40
0
Common emitter
Tc = −40°C
Common emitter
Tc = 25°C
0
0
0
1
2
3
4
5
5
5
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C CE
C
CE
200
160
200
160
3.5
3.5
3.0
3.0
120
80
120
80
2.5
2.5
V
= 2.0 V
GE
V
= 2.0 V
GE
40
0
40
0
Common emitter
Tc = 70°C
Common emitter
Tc = 125°C
1
2
3
4
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
V
– Tc
CE (sat)
C
GE
70
200
160
3
I
= 130 A
C
2.5
2
25
100
120
80
Tc = −40°C
70
40
125
1.5
1
40
0
0.5
Common emitter
= 5 V
Common emitter
V
V
CE
= 3 V
GE
0
1
2
3
4
−80
−40
0
40
80
120
160
Gate-emitter voltage
V
(V)
Case temperature Tc (°C)
GE
3
2002-05-17
GT5G131
V
– V
V
– V
CE GE
CE
GE
5
4
5
4
Common emitter
Tc = −40°C
Common emitter
Tc = 25°C
I
= 130 A
C
I
= 130 A
C
3
2
3
2
100
70
100
70
40
3
40
1
0
1
0
0
1
2
4
5
0
1
2
3
4
5
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
V
– V
V
– V
CE GE
CE
GE
5
5
4
Common emitter
Tc = 70°C
Common emitter
Tc = 125°C
4
I
= 130 A
C
100
3
2
3
2
70
100
70
I
= 130 A
C
1
0
1
0
40
3
40
0
1
2
4
5
0
1
2
3
4
5
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
V
– Tc
C – V
CE
GE (OFF)
1.4
1.2
10000
1000
100
Common emitter
V = 5 V
CE
I = 1 mA
C
ies
C
1
0.8
0.6
C
oes
0.4
0.2
0
Common emitter
= 0 V
f = 1 MHz
Tc = 25°C
C
res
V
GE
10
−80
−40
0
40
80
120
160
1
10
Collector-emitter voltage
100
1000
Case temperature Tc (°C)
V
(V)
CE
4
2002-05-17
GT5G131
Switching Time – R
V
, V
CE GE
– Q
G
G
10
500
400
10
8
t
on
t
off
t
f
300
200
6
4
1
t
r
V
GE
Common emitter
V
V
= 300 V
= 3 V
= 130 A
Common emitter
= 300 V
CE
GE
2
0
V
100
0
CC
R = 2.3 Ω
L
I
C
V
CE
Tc = 25°C
Tc = 25°C
0.1
1
0
0
10
Gate resistance
100
(Ω)
1000
200
8
0
20
40
60
80
R
G
Gate charge
Q
(nC)
G
Switching Time – I
Maximum Operating Area
CP
10
800
600
400
200
0
t
off
t
f
1
t
on
Common emitter
CC
GE
V
= 350 V
CM
V
V
R
= 300 V
= 3 V
<
t
r
Tc 70°C
=
V
GE
= 4 V
= 30 Ω
Tc = 25°C
G
<
<
=
10 Ω
R
=
300 Ω
G
0.1
50
100
150
0
40
80
120
160
(A)
200
Collector current
I
(A)
Peak collector current
I
CP
C
Minimum Gate Drive Area
200
160
120
80
Tc = 25°C
70
40
0
2
4
6
Gate-emitter voltage
V
(V)
GE
5
2002-05-17
GT5G131
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
6
2002-05-17
相关型号：
©2020 ICPDF网 联系我们和版权申明