GT80J101B [TOSHIBA]
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT; 东芝绝缘栅双极晶体管硅N沟道IGBT
| 型号： | GT80J101B |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
Unit: mm
·
·
·
Enhancement mode type
High speed: t = 0.40 µs (max) (I = 80 A)
f
C
Low saturation voltage: V
= 2.9 V (max) (I = 80 A)
C
CE (sat)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
600
±20
33
V
V
CES
V
GES
@Tc = 100°C
Continuous collector
current
I
C
A
A
@Tc = 25°C
80
Pulsed collector current (Note 1)
I
160
80
CP
@Tc = 100°C
Collector power
@Tc = 25°C
dissipation
P
C
200
3.5
W
JEDEC
JEITA
?
?
@Ta = 25°C
Junction temperature
T
150
- 55~150
0.8
°C
°C
j
Storage temperature
T
stg
TOSHIBA
2-21F2C
Screw torque
¾
N·m
Weight: 9.75 g (typ.)
Note 1: The Maximum rating of ICP=160Ais limited by pulse (1ms).
Refer to the graph of safe operating area for the detail.
Thermal Characteristics
Characteristics
Symbol
Rating
0.625
Unit
Thermal resistance , junction to case
R
R
°C/W
th (j-c)
th (j-a)
(Tc = 25°C)
Thermal resistance , junction to air
35.7
°C/W
(Ta = 25°C)
MARKING
Part No. (or abbreviation code)
Lot No.
TOSHIBA
80J101B
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-06-05
GT80J101B
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
¾
¾
¾
±500
1.0
6.0
2.0
2.9
¾
nA
mA
V
GES
GE
CE
Collector cut-off current
I
V
CE
V
CE
= 600 V, V = 0
GE
CES
Gate-emitter cut-off voltage
V
= 5 V, I = 80 mA
3.0
¾
¾
GE (OFF)
C
V
(1)
I
= 10 A, V = 15 V
C GE
¾
CE (sat)
CE (sat)
Collector-emitter saturation voltage
V
V
(2)
I
C
= 80 A, V = 15 V
GE
¾
2.4
5500
Input capacitance
Rise time
C
V
CE
= 10 V, V = 0, f = 1 MHz
GE
¾
pF
ies
Resistive load
t
r
¾
¾
¾
¾
0.3
0.5
¾
¾
V
CC
= 300 V,
= ±15 V,
I = 80 A
C
Turn-on time
t
on
V
GG
R = 33W
G
Switching time
ms
Fall time
t
f
0.25
0.7
0.40
¾
(Note 2)
Turn-off time
t
off
Note 2: Switching time measurement circuit and input/output waveforms.
V
GE
90%
10%
0
0
R
G
R
L
I
C
0
90%
90%
V
CC
V
CE
10%
10%
t
d (off)
t
f
t
r
t
t
on
off
Caution on handling
This device is MOS gate type. Therefore, please care about ESD when use.
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2006-06-05
GT80J101B
I
C
- V
CE
V - V
CE GE
100
80
60
40
20
0
10
8
10
Common emitter
Common emitter
Tc = - 40°C
15
20
8
Tc = 25 °C
10
20
6
40
60
I
= 80 A
C
6
5
4
2
V
GE
= 4 V
0
0
0
2
4
6
8
10
24
12
4
8
12
16
20
24
Collector-emitter voltage
V
CE
(V)
Gate-emitter voltage
V
GE
(V)
V
- V
GE
V - V
CE GE
CE
10
8
10
8
Common emitter
Common emitter
Tc = 25°C
Tc = 125°C
10
10
6
6
I
= 80 A
C
20
40
60
I
= 80 A
C
20
40
60
4
4
2
2
0
0
0
0
4
8
12
16
20
4
8
12
16
20
24
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
GE
(V)
GE
I
- V
V - Tc
CE (sat)
C
GE
100
80
60
40
20
0
4
3
2
1
Common emitter
= 5 V
Common emitter
V
CE
V
= 15 V
GE
80
50
30
I
= 10 A
C
Tc = 125°C
25
- 40
0
- 40
0
2
4
6
8
10
0
40
80
120
160
Gate-emitter voltage
V
GE
(V)
Case temperature Tc (°C)
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2006-06-05
GT80J101B
V
, V - Q
Switching time – R
G
CE GE
G
20
16
12
8
10
Common emitter
Common emitter
= 1.88 W
V
CC
= 300 V
R
L
5
3
I
= 80 A
C
Tc = 25°C
V
GG
= ±15 V
t
t
off
on
Tc = 25°C
V
CE
= 150 V
1
t
r
t
f
0.5
0.3
100
50
4
0
0
80
160
240
320
0.1
3
Gate charge
Q
G
(nC)
5
10
30
50
100
300 500
Gate resistance
R
G
(W)
Switching time – I
C - V
CE
C
5
3
30000
10000
Common emitter
V = 300 V
CC
= 33 W
R
G
V
= ±15 V
GG
5000
3000
Tc = 25°C
C
ies
1
0.5
0.3
t
1000
off
500
300
t
on
C
oes
Common emitter
t
f
V
GE
= 0 V
t
f = 1 MHz
Tc = 25°C
r
0.1
0
100
50
C
10
20
30
40
50
60
70
80
res
Collector current
I
C
(A)
1
3
5
10
30 50
100
300 500
Collector-emitter voltage
V
CE
(V)
Safe Operating Area
* Single non-repetitive pulse Tc = 25°C
Curves must be derated linearly with increase in
temperature.
R
- t
w
th (t)
200
100
2
1
0
1
2
3
I
max
1 ms *
10 ms *
100 ms *
10
C
Tc = 25 °C
(Pulsed)
10
I
max
C
(Continuous)
30
10
10
DC
Operation
-
10
3
1
-
10 ms *
1 ms *
10
10
-
5
4
3
2
1
-
10
0
10
1
2
-
-
-
-
1
3
10
30
100
300
1000
10
10
10
10
10
10
Collector-emitter voltage
V
CE
(V)
Pulse width
t
w
(s)
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2006-06-05
GT80J101B
Reverse Bias SOA
300
100
30
10
3
1
<
T
j
125°C
V
= +15 V
- 0
GE
0.3
0.1
R
= 33 W
G
0
100
200
300
400
500
600
700
Collector-emitter voltage
V
CE
(V)
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2006-06-05
GT80J101B
RESTRICTIONS ON PRODUCT USE
030619EAA
· The information contained herein is subject to change without notice.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2006-06-05
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