JTMP04090XXXXS(ES) [TOSHIBA]
IC 4-BIT, OTPROM, 2 MHz, MICROCONTROLLER, UUC100, 6.16 X 5.98 MM, 0.48 MM PITCH, DIE-100, Microcontroller;
| 型号： | JTMP04090XXXXS(ES) |
| 厂家： | 
TOSHIBA |
| 描述： | IC 4-BIT, OTPROM, 2 MHz, MICROCONTROLLER, UUC100, 6.16 X 5.98 MM, 0.48 MM PITCH, DIE-100, Microcontroller 可编程只读存储器 时钟 微控制器 外围集成电路 |
| 文件： | 总25页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
CMOS 4-bit LL Microcontroller (OTP built-in)
(LL: Low power consumption & voltage operation microcontroller)
The TMP04090FXXXX and JTMP04090XXXXS are
high-performance 4-bit microcontrollers incorporating a
16-Kword (1 word = 16 bits) one-time PROM (OTP).
They are pin-compatible with the mask ROM versions of
TMP04CH00FXXX and TMP04CH01FXXX.
With programs written to their built-in PROMs, the devices
operate the same as the mask ROM products. They are therefore
optimal for developing software.
With an adapter socket, the TMP04090FXXXX can use a
general-purpose EPROM programmer for the writing and
verification of programs.
Because the TMP04090FXXXX and JTMP04090XXXXS are
Weight: 1.65 g (typ.)
developed as software development tools for mask ROM versions (TMP04CH00FXXX, TMP04CH01FXXX), they are
limited engineering sample versions.
For operations other than writing to OTP, the devices are the same as the mask ROM versions.
For these operations, see the data sheets on the TMP04CH00FXXX and TMP04CH01FXXX.
Note that the OTP-version products do not have STOP mode and HOLD mode. Do not bring these products to the
modes. A malfunction may occur.
1
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
Features
Package type device
Package type device
: TMP04090F33F1 (ES)
: TMP04090FXXXX (ES)
Chip type device
Chip type device
: JTMP04090XXXXS (ES)
(Note)
: JTMP0409033F1S (ES)
(Note)
Parameter
OTP version corresponding
OTP version corresponding
to mask ROM version
to mask ROM version
TMP04CH00FXXX (T41)
TMP04CH01FXXX (T42)
8 (IN1 to IN4, IO01 to IO04)
Interrupt: 8 (IN1 to IN4, IO01 to IO04)
4 (IN1 to IN4)
Interrupt: 4 (IN1 to IN4)
Input pins
12 (IO01 to IO04, IO11 to IO14,
IO21 to IO04)
Interrupts: 4 (IO01 to IO04)
8 (IO11 to IO14, IO21 to IO24)
Interrupt: none
Input/output pins
1
1
Buzzer output pin
drive pattern: 7
drive pattern: 6 + 1 V
fixed type
DD
60 SEG × 8 COM/58 SEG × 10 COM
LCD driver controller
52 SEG × 16 COM
Mask option
Operating voltage in MCU mode
3.0 V (typ.)
3.0 V (typ.)
Data RAM: 6 Kbits
Data RAM: none
Built-in RAM size
Work RAM: 512 × 4-bit
Built-in ROM size
16 K word (1 word = 16 bits)
56
No. of basic instructions
61 µs (32.768 kHz)
1 µs (2 MHz)
Minimum instruction execution time
Oscillator circuit
Low-speed crystal oscillator (32.768 kHz)
High-speed crystal oscillator (2 MHz/3.0 V)/external CR (2 MHz/3.0 V) Mask option
2 external (input pin, general-purpose input/output pin)
2 internal (timer/counter, timings)
Interrupts
Timer
8-bit × 2-ch/16-bit × 1-ch (selectable by software)
Timer/counter can be used as watchdog timer
8-bit parallel
Watchdog timer
PROM writing method
No. of writes
1 (for chip or Package type device)
Note:
For product names, see page 14.
2
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
Block Diagram of TMP04090
(OTP version corresponding to mask ROM versions, TMP04CH00FXXX and
JTMP04CH00XXXS)
TEST
XH XH
XL XL
IN OUT
BRESET
IN
OUT
Test
Oscillator
Control
Reset
Circuit
T4X CORE
ROM
(16 K words)
Work RAM
(2 K bits)
OTP
Display RAM
Writer
SEG1 to SEG60
COM1 to COM10
LCD
Data RAM
(6 K bits)
Controller
V
V
V
V
4
3
2
1
Quadrupler
Interrupt
Controller
C
C
V
1
V
1
2
Timer/Counter
(8 bit/16 bit)
XT
SS
DD
Voltage
Reglater
V
V
IN1 to IN4
IO01 to IO04
IO11 to IO14
IO21 to IO24
I/O Port
(IN 8, OUT 8)
BZ
Controller
BZ
Note:
The OTP version corresponding to the mask ROM versions, TMP04CH01FXXX and JTMP04CH01XXXS
(T42), does not include data RAM.
3
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
Pad/Pin Assignment
1. Pad Assignment
S
S
S
51
22
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
52
21
20
19
18
17
16
15
14
13
12
11
10
9
S
S
S
S
S
S
, COM16
, COM15
, COM14
, COM13
, COM12
, COM11
53
54
55
56
57
58
COM10/S , COM10
59
COM9/S , COM9
60
COM8
COM7
COM6
COM5
COM4
COM3
COM2
COM1
JTMP04090XXXXS
(top view)
8
7
6
5
V
V
V
4
3
2
4
3
2
V
S
1
1
Chip size
6.16 × 5.98 (mm)
Chip thickness 450 ± 30 (µm)
Substrate voltage
V
SS
Note 1: Pin specifications differ between the OTP versions corresponding to TMP04CH00FXXX and
TMP04CH01FXXX.
Example: COM9/S60,
OTP version corresponding
to TMP04CH00FXXX
COM9
OTP version corresponding
to TMP04CH01FXXX
Note 2: Chip size differs from that of the mask ROM version.
4
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
2. JTMP04090XXXXS (ES) Pad Layout
3
(×10− mm)
No.
Name
X Point
Y Point
No.
Name
X Point
Y Point
1
V
−2901
−2576
−2350
−2141
−1952
−1764
−1614
−1464
−1314
−1164
−1014
−596
−223
−44
−2505
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2855
−2505
−1540
−1314
−1126
−976
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
S
S
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2901
2539
2256
1992
1747
1521
1314
1126
976
−526
−375
−225
−75
1
8
9
2
C
1
2
3
C
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
4
V
SS
5
V
75
XT
6
BRESET
XL
225
7
375
IN
8
XL
OUT
V
DD
525
9
675
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
XH
825
IN
XH
975
OUT
TEST
BZ
1126
1314
1540
2505
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
2855
IN1
IN2
106
IN3
256
IN4
406
IO01
IO02
IO03
IO04
IO11
IO12
IO13
IO14
IO21
IO22
IO23
IO24
557
707
857
1007
1157
1307
1457
1645
1852
2078
2324
2588
2901
2901
2901
2901
2901
2901
2901
826
675
525
375
225
75
S
S
S
S
S
S
S
−75
1
2
3
4
5
6
7
−225
−375
−525
−675
−826
−976
−826
−676
Note:
Pad X and Y point values differ from those of the mask ROM version.
5
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
No.
73
Name
X Point
−1126
−1314
Y Point
2855
No.
87
Name
S , COM11
58
X Point
−2901
−2901
Y Point
525
S
S
44
45
COM10/S
,
59
74
2855
88
375
COM10
COM9/S
,
60
75
S
−1521
2855
89
−2901
225
46
COM9
COM8
COM7
COM6
COM5
COM4
COM3
COM2
COM1
76
77
78
79
80
81
82
83
84
85
86
S
S
S
S
S
S
−1747
−1992
−2256
−2539
−2901
−2901
−2901
−2901
−2901
−2901
−2901
2855
2855
2855
2855
2505
1540
1314
1126
975
90
91
92
93
94
95
96
97
98
99
100
−2901
−2901
−2901
−2901
−2901
−2901
−2901
−2901
−2901
−2901
−2901
75
47
48
49
50
51
52
−75
−225
−375
−526
−676
−826
−976
−1126
−1314
1540
S
S
S
S
S
, COM16
, COM15
, COM14
, COM13
, COM12
53
54
55
56
57
V
V
V
4
3
2
825
675
Note:
Pad X and Y point values differ from those of the mask ROM version.
Definition of pad X and Y points
(Supplementary)
As shown below, X and Y points are determined with the center of the chip as the
origin.
Y POINT
X POINT
Origin
6
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
3. Pin Assignment of TMP04090FXXXX
80
51
81
50
TMP04090FXXXX (ES)
100
31
1
30
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
1
V
C
C
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
IO21
IO22
IO23
IO24
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
S
S
S
S
S
S
1
1
2
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
2
3
4
V
SS
XT
5
V
S
S
S
S
S
S
S
S
S
1
2
3
4
5
6
7
8
9
6
BRESET
XL
7
S
S
S
S
S
S
S
/COM16
/COM15
/COM14
/COM13
/COM12
/COM11
/COM10
IN
53
54
55
56
57
58
59
8
XL
OUT
V
DD
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
XH
IN
XH
OUT
TEST
BZ
IN1
S
S
S
S
S
S
S
S
S
S
S
S
S /COM9
60
10
11
12
13
14
15
16
17
18
19
20
21
IN2
COM8
COM7
COM6
COM5
COM4
COM3
COM2
COM1
IN3
IN4
IO01
IO02
IO03
IO04
IO11
IO12
IO13
IO14
V
V
V
4
3
2
Note 1: In the OTP version corresponding to TMP04CH00FXXX, pins 82 to 87 are S53 to S58.
Note 2: In the OTP version corresponding to TMP04CH01FXXX, pins 82 to 87 are COM16 to COM9.
7
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
4. Pin Description
4.1 Pin Description of OTP Version Corresponding to TMP04CH00FXXX
Pin Name
Function
V
V
V
V
Power supply
DD
SS
XT
1
GND
Voltage regulator1 output
Voltage regulator2 output
Boosted voltage output
Capacitor pin for LCD booster
V to V
2
4
C to C
1
2
XH to XH
Crystal/resister connection pin for high speed oscillator
Crystal connection pin for low speed oscillator
Input port (with interruption)
IN
OUT
XL to XL
IN
OUT
IN1 to IN4
IO01 to IO04
IO11 to IO14
IO21 to IO24
SEG1 to SEG60
COM1 to COM10
BZ
I/O port (with interruption)
I/O port
I/O port
LCD segment output (mask option 58 SEG/60 SEG selectable)
LCD common output (mask option 10 COM/8 COM selectable)
Buzzer output
BRESET
Reset input (low active)
TEST
Test input (connect to V
)
SS
4.2 Pin Description of OTP Version Corresponding to TMP04CH01FXXX
Pin Name
Function
V
V
V
V
Power supply
DD
SS
XT
1
GND
Voltage regulator 1 output
Voltage regulator 2 output
Boosted voltage output
Capacitor pin for LCD booster
V to V
2
4
C to C
1
2
XH to XH
Crystal / resister connection pin for high speed oscillator
Crystal connection pin for low speed oscillator
Input port (with interruption)
I/O port (with interruption)
I/O port
IN
OUT
XL to XL
IN
OUT
IN1 to IN4
IO01 to IO04
IO11 to IO14
IO21 to IO24
SEG1 to SEG52
COM1 to COM16
BZ
I/O port
LCD segment output
LCD common output
Buzzer output
BRESET
Reset input (low active)
TEST
Test input (connect to V
)
SS
8
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
5. Operation
The TMP04090FXXXX is a one-time PROM version of the TMP04CH00FXXX and
TMP04CH01FXXX which incorporate mask ROM. Other than the ROM, the configuration and
functions of the TMP04090FXXXX are the same as those of the TMP04CH00FXXX and
TMP04CH01FXXX.
5.1 Operating Mode
The TMP04090FXXXX supports MCU and PROM modes.
5.2 MCU Mode
Fixing the TEST pin to L level puts the device in MCU mode.
In MCU mode, operation is the same as that for the mask ROM versions, TMP04CH00FXXX and
TMP04CH01FXXX. For the function of MCU mode, refer to the T4X Series Users' Manual.
5.3 PROM Mode
Connect a 2-MHz oscillator to the XH and XH
pins, set the BRESET pin = V and the IN1
SS
IN OUT
pin = V . Then, setting the TEST pin (V ) to H level sets PROM mode.
DD PP
Definition of the ROM area in MCU mode is as shown in Figure 1 because 1 word = 16 bits.
Write to ROM in PROM mode is performed in 8 bits, divided into two as shown in Figure 2.
In PROM mode, programs can be written or verified using a general-purpose EPROM writer.
16-bit
Upper 8 bits
(0001H)
Lower 8 bits
(0000H)
(0000H)
･
(0003H)
(0002H)
Page 0
Page 1
Page 2
Page 3
4 K words
4 K words
4 K words
4 K words
Page 0
Page 1
Page 2
Page 3
4 K words
4 K words
4 K words
4 K words
･
･
･
･
･
･
(0FFFH)
(1FFFH)
(1FFEH)
(1000H)
(2001H)
(2000H)
･
･
･
･
･
･
･
･
･
(1FFFH)
(3FFFH)
(3FFEH)
(2000H)
(4001H)
(4000H)
･
･
･
･
･
･
･
･
･
(2FFFH)
(5FFFH)
(5FFEH)
(3000H)
(6001H)
(6000H)
･
･
･
･
･
･
･
･
･
(3FFFH)
(7FFFH)
(7FFEH)
Figure 1 Addresses in MCU mode
Figure 2 Addresses in PROM mode
9
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
5.4 Table of PROM Mode Setting Pins
Listed Below are The Pins Required in PROM Mode.
Pin Specification
Pin Name in PROM
Pin Name
No. of Pins
Function in PROM Mode
Mode
MCU Mode
Input/output
PROM Mode
Input/output
IO11 to IO14
IO21 to IO24
4
4
PDB0 to PDB3
PDB4 to PDB7
Program memory data input/output (8-bit)
Program memory address input
(0000H to 7FFFH)
S
to S
15
Output
Input
EPAD0 to EPAD14
25
39
S
S
1
1
Output
Output
Input
Input
EPCE (/CE)
EPOE (/OE)
Chip enable signal input
40
41
Output enable signal input
Input for setting PROM mode
BRESET
IN1
1
1
1
Input
Input
Input
Input
Input
BRESET
IN1
(V level fixed)
SS
Input for setting PROM mode
(V
level fixed)
DD
Program voltage input
(12.75 V/5 V)
TEST
Power supply
V
PP
XH
XH
1
1
High-speed oscillation
High-speed oscillation
Low-speed
XH
XH
High-speed oscillation (input)
High-speed oscillation (output)
IN
IN
OUT
OUT
XL
1
Unused
Unused (V level fixed)
SS
IN
oscillation
V
V
V
1
1
1
Power supply
V
+5 V supply input (5 V/6.25 V)
DD
CC
Booster output
Unused
Unused (V
level fixed)
DD
4
GND
GND
+0 V supply input
SS
Handling of pins not listed above may differ depending on aluminum option. Handle by referring to
the table below.
Pin Name
No. of Pins
Aluminum Option Code
Pin Specification
Pin Handling
Open
A3081
A30A1
A3480
A34A0
A5082
A50A2
A33F1
With pull-down resistor
Without pull-down resistor
Connect to V
SS
IN2 to IN4
3
With pull-down resistor
With pull-down resistor
Open
Open
For details of aluminum specifications, see the Aluminum Specification Table.
10
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
5.5 PROM Mode Setting Diagram
Setting the TMP04090FXXXX pins as shown in the figure below sets PROM mode. In PROM mode,
programs can be written or verified using a general-purpose PROM writer. Since the
TMP04090FXXXX does not support an electric signature function, set the PROM writer ROM type to
TC57256AD or equivalent.
V
DD
V
V
DD
CC
(5 V/6.25 V)
IN1
V
TEST
PP
(12.75 V/5 V)
V
4
PDB0 to PDB3
PDB4 to PDB7
EPAD0 to EPAD14
EPCE (/CE)
IO11 to IO14
IO21 to IO24
IN2 to IN4
Connected to V
SS
S
S
S
to S
39
25
40
41
depending on aluminum
option.
TMP04090XXXX
EPOE (/OE)
XH
XH
IN
High-speed
oscillator
General-purpose
PROM writer
OUT
XL
IN
V
BRESET
SS
Note:
The TMP04090FXXXX can select a high-speed oscillator depending on the mask option, thus the structure
of the high-speed oscillator circuit changes according to the mask option specification (figures below).
Set the oscillator frequency to 2 MHz (typ.)
(1) Crystal oscillator
(2)
CR oscillator
22 pF
22 pF
XH
XH
IN
IN
XH
XH
OUT
OUT
(Supplementary)
With package type devices, the pins necessary for setting PROM mode are handled
on the adapter socket, thus the above setting is unnecessary.
11
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
5.6 How to Write Using General-Purpose PROM Programmer
[1] Package type device (TMP04090FXXXX)
(1) Prepare adapter
Adapter socket: PN004103
(2) Set PROM programmer
(i)
Set the PROM type to TC57256AD or equivalent.
Write voltage: 12.75 V
(ii) Set write address
Start address: 0000H
End address: 7FFFH
(3) Write
Write or verify a program according to the operation steps of the PROM programmer.
Note 1: For settings, refer to the PROM programmer instruction manual.
Note 2: When installing the MCU on the adapter or installing the adapter on the PROM programmer,
match pin 1 of the one device to the corresponding pin 1 of the other. If the orientations do not
match, the MCU, adapter, or PROM programmer will be damaged.
Note 3: The TMP04090FXXXX does not support Electric Signature mode (Signature). Therefore, if
Signature is used by the PROM programmer, 12.5 V ± 0.5 V is applied to pin 9 of the address
(EPAD9), damaging the device. Do not use Signature.
[2] Chip type device (JTMP04090XXXXS)
(1) Mounting chip type device
Write program on the chip before mounting peripherals. For how to set PROM mode or how to
connect to a general-purpose PROM writer, see 5.5, PROM Mode Setting Diagram.
(2) Set PROM programmer
(i)
Set the PROM type to TC57256AD or equivalent.
Write voltage: 12.75 V
(ii) Set write address
Start address: 0000H
End address: 7FFFH
(3) Write
Write or verify a program according to the operation steps of the PROM programmer.
(Supplementary)
(1) Program Memory Security (PMS), which inhibits reading program after writing, is not
supported.
(2) Gang writer (simultaneous multiple writes) is not supported.
(3) Program write service is not supported.
12
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
5.7 Write Flow Chart (High-speed program mode II)
With V = 6.25 V, applying program voltage of V = 12.75 V puts the device in High-Speed
CC PP
Program mode II. After entering the address and input data, applying a single program pulse of 0.1
ms to/CE input writes data. Verify whether data are written correctly. If not written correctly, apply a
0.1 ms program pulse again. Repeat until data are written correctly (up to 25 times). Afterwards,
change address and input data, and continue writing in the same way. When all writes are complete,
set V
CC
= V = 5 V and verify data from all addresses.
PP
Start
V
= 6.25 V
CC
V
= 12.75 V
PP
Set start address
N = 0
Apply 0.1 ms program pulse
N = N + 1
YES
N = 25?
NO
NG
NO
Verify
Address = Address + 1
OK
Last address?
YES
V
V
= 5 V
= 5 V
CC
PP
NG
Read from all
addresses
OK
End write
Failure
Figure 3 Write flow chart in High-speed program mode II
13
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
6. Mask Option and Pin Equivalent Circuit
6.1 List of Mask Option Specifications
(1) OTP version corresponding to TMP04CH00FXXX
(T41)
High-
Speed Speed
Segments Oscill- Oscill-
Low-
Input Port Status
Product Name
MASK
Code
Supply
Voltage
LCD
Duty
No. of
Supply Type
IN1 to IN4
IO01 to IO04
IO11 to IO14
IO21 to IO24
OTP Version
MASK ROM Version
ation
ation
X’tal
Chip type device JTMP040903081S (ES)
JTMP04CH00XXXS (PI)
TMP04CH00FXXX (BH, D)
JTMP04CH00XXXS (PI)
TMP04CH00FXXX (BH, D)
3.0 V
(typ.)
With pull-down
resistor
With pull-down
resistor
A3081
A30A1
1/8
60
58
CR
Package type
TMP04090F3081 (ES)
device
Chip type device JTMP0409030A1S (ES)
3.0 V
(typ.)
With pull-down
resistor
With pull-down
resistor
1/10
CR
X’tal
X’tal
Package type
TMP04090F30A1 (ES)
device
IN1 to IN4
Without pull-down
resistor
Chip type device JTMP040903480S (ES)
JTMP04CH00XXXS (PI)
TMP04CH00FXXX (BH, D)
JTMP04CH00XXXS (PI)
TMP04CH00FXXX (BH, D)
3.0 V
(typ.)
With pull-down
resistor
A3480
A34A0
1/8
60
58
X’tal
IO01 to IO04
With pull-down
resistor
Package type
TMP04090F3480 (ES)
device
IN1 to IN4
Without pull-down
resistor
Chip type device JTMP0409034A0S (ES)
3.0 V
(typ.)
With pull-down
resistor
1/10
X’tal
X’tal
IO01 to IO04
With pull-down
resistor
Package type
TMP04090F34A0 (ES)
device
(2) OTP version corresponding to TMP04CH01FXXX
(T42)
High-
Speed Speed
Segments Oscill- Oscill-
Low-
Input Port Status
Product Name
MASK
Code
Supply
Voltage
LCD
Duty
No. of
Supply Type
OTP Version
IN1 to IN4
IO11 to IO14
IO21 to IO24
MASK ROM Version
IO01 to IO04
ation
ation
Chip type device JTMP0409033F1S (ES)
JTMP04CH01XXXS (PI)
3.0 V
(typ.)
With pull-down
resistor
With pull-down
resistor
A33F1
1/16
52
CR
X’tal
Package type
TMP04090F33F1 (ES)
device
TMP04CH01FXXX (BH, D)
14
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
6.2 Input/output Circuit for Pins
(1) Control pin
Shown below is an equivalent circuit of the TMP04090FXXX control pins.
Control Pin Input/Output
Circuit
Remarks
OSC、enable
High-speed oscillator connection
pin
V
V
DD
DD
R
f
(Mask option: X’tal)
R = 3 MΩ (typ.)
f
XH
XH
OUT
IN
XH
XH
IN
Input/Output
OUT
External resistor
V
DD
V
Resistor connection pin for
high-speed oscillation
DD
C
(Mask option: CR)
C = 10 pF (typ.)
XH
IN
XH
OUT
OSC, enable
Low-speed oscillator connection
pin
V
V
DD
DD
XL
XL
IN
Input/Output
(Mask option: X’tal)
R
f
OUT
R = 10 MΩ (min)
f
XL
XL
OUT
IN
V
V
DD
DD
TEST
R
1
R
2
R
3
= 500 kΩ (typ.)
= 55.5 kΩ (typ.)
= 150 Ω (typ.)
V
BRESET
Input
DD
R
3
V
TEST
PP
R
2
TEST
(V
R
R
= 10 kΩ (typ.)
= 150 Ω (typ.)
1
Input
)
PP
2
PMODE
M1
V
DD
BZ
Output
CMOS output
15
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
(2) Input/output ports
Shown below is an equivalent circuit of the TMP04090FXXX input/output ports.
Control Pin Input/Output
Circuit
Remarks
Pull-down input
= 400 kΩ (typ.)
V
DD
R
2
R
1
IN1 to IN4
Input
Input/Output
Input
Mask option specified
With/without pull-down resistor
R
1
= 150 Ω (typ.)
V
V
DD
DD
OUT
R
Key strobe input/output
1
IO11 to IO14
IO21 to IO24
R
2
R
1
= 400 kΩ (typ.)
= 150 Ω (typ.)
V
DD
Pull-down input
R
1
IO01 to IO04
R
= 400 kΩ (typ.)
= 150 Ω (typ.)
2
1
R
Note:
For the OTP version corresponding to the TMP040CH01FXXX (A33F1), IO01 to IO04 are as shown below
Control Pin Input/Output
Circuit
Remarks
V
V
DD
DD
IOO
R
1
Key strobe input/output
IO01 to IO04 Input/Output
R
2
R
1
= 400 kΩ (typ.)
= 150 Ω (typ.)
16
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
7. Maximum Ratings
7.1 Absolute Maximum Ratings (V = 0 V, Ta = 25°C ± 1.5°C)
SS
(1) TMP04090FXXXX (Package type device)
Characteristics
Power supply voltage
Symbol
Rating
Unit
V
V
−0.3 to 6.0
−0.3 to 13.0
−0.3 to
V
V
DD
Program supply voltage
Input voltage
PP
V
V
IN
V
+ 0.3
DD
Power dissipation
(Note)
P
1.0
260/10
W
°C/S
°C
D
Solder temperature
Storage temperature
Operating temperature
T
sol
T
stg
opr
−55 to 125
T
0 to 40
°C
Note:
Power dissipation decreases by about 12 mW per 1°C.
(2) JTMP04090XXXXS (Chip type device)
Characteristics
Power supply voltage
Symbol
Rating
Unit
V
V
−0.3 to 6.0
−0.3 to 13.0
−0.3 to
V
V
DD
Program supply voltage
Input voltage
PP
V
V
IN
V
+ 0.3
DD
Storage temperature
Operating temperature
T
−55 to 125
°C
°C
stg
T
0 to 40
opr
17
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
8. Electrical Characteristics
8.1 Electrical Characteristics in PROM Mode
(1) Read operating (T
= 25°C ± 1.5°C, V = 0 V)
SS
opr
Pin Name
Characteristics
High level
Symbol
Test Condition
Min
0.7
Typ.
Max
Unit
V
V
V
CC
IH1
V
CC
S
to S
41
25
Input voltage
IN1 to IN4
0.12
Low level
V
V
V
SS
IL1
V
CC
Operating voltage
V
4.75
5.00
5.25
V
V
CC
DD
V
V
CC
+ 0.6
CC
Program supply voltage
Read Timing Diagram
EPAD0 to EPAD14
V
TEST
V
CC
PP
− 0.6
CE
OE
t
= 1.5 tcyc + 300 ns (typ.)
aCC
@V
= 5.0 V
CC
Data output
PDB0 to PDB7
Note:
t
= 1 µs (f
, f
XTH osc2
= 2 MHz)
t
= 1/f × 2 Clock
XTH
cyc
cyc
18
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
(2) At program execution (T
opr
= 25°C ± 1.5°C、V = 0 V)
SS
Applicable
Characteristics
Symbol
Test Condition
Min
0.7
Typ.
Max
Unit
V
Pin
IO11 to IO14
IO21 to IO24
IN1 to IN4
High level
V
V
CC
IH2
V
CC
Input voltage
0.12
Low level
V
V
V
SS
IL2
V
S
to S
41
CC
25
Operating voltage
V
6.00
12.5
6.25
6.50
13.0
V
V
CC
DD
Program supply voltage
V
TEST
12.75
PP
Program Timing Chart
EPAD0 to EPAD14
CE
t
t
: Initial program pulse width 0.1 ms (typ.)
pw
pw
@V
= 6.25 V (typ.)、V = 12.75 V (typ.)
PP
CC
OE
PDB0 to PDB7
UNKNOWN
Input
Output
Verify
V
PP
Write
Initial program
Note 1: Turn supply voltage V (12.75 V) on at the same time as or after V
PP CC
supply voltage. At power off, turn off
at the same time as or before V
supply voltage.
CC
Note 2: When V = 12.75 V ± 0.25 V, do not insert/remove the device because this will damage the device. That is,
PP
do not insert/remove the device while the program is being executed.
Note 3: The maximum rating of the V pin is 13 V. While the program is being executed, including overshoot,
PP
make sure that a voltage exceeding 13 V is not applied.
19
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
8.2 Electrical Characteristic in MCU Mode
TMP04090FXXXX (ES), JTMP04090XXXXS (ES)
(1) 3.0 V version (Unless otherwise specified, V = 0 V, T
= 0 to 40°C)
SS
opr
Recommended operating condition
(T41, T42)
Characteristics
Power supply voltage
Symbol
Test Condition
= 2 MHz
XTH
Min
2.4
Typ.
Max
3.6
Unit
V
f
3.0
32.768
2.0
V
DD
Low-speed X’tal
High-speed X’tal
High-speed CR
f
V
V
V
= 2.4 V to 3.6 V
= 2.4 V to 3.6 V
= 3.0 V
(Note 1)
(Note 2)
(Note 3)
kHz
XTL1
XTH1
XTH2
DD
DD
DD
Oscillation frequency
f
f
MHz
2.0
V
× 0.8
DD
V
V
V
V
= 2.4 V
= 3.6 V
= 2.4 V
= 3.6 V
V
DD
DD
DD
DD
DD
High level
Low level
V
IH
V
× 0.7
DD
V
V
DD
DD
Input voltage
V
0
× 0.2
V
IL
V
DD
0
× 0.3
Quadrupler capacitance
Voltage capacitance
C , C
0.1
0.1
0.1
0.1
0.1
0.1
µF
µF
1
2
V
V
V
V
1C
2C
3C
4C
V
XTC
Note 1: Crystal oscillation circuit is used for low-speed oscillator.
Note 2: Crystal oscillation circuit is used for High-speed oscillator.
Note 3: An RC oscillating circuit configured with an external R is used for the high-speed oscillator.
Oscillation (3.0 V version)
(T41, T42)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
Low-speed X’tal
V
V
T
T
= 10 s, T
= 8 ms
= 25°C (Note 4) 1.85
opr
STA1
STA2
STA
STA
OSC starting voltage
OSC holding voltage
High-speed X’tal
Low-speed X’tal
High-speed X’tal
2.20
1.65
2.0
V
V
HOLD1
HOLD2
V
Frequency of high-speed OSC
f
V
= 3.0 V, R = 13.3 kΩ (Note 5)
2.0
MHz
osc2
DD
f
Note 4: Internal CR oscillator for low-speed oscillator.
Note 5: An RC oscillating circuit configured with an external R is used for the high-speed oscillator.
20
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
DC Characteristic (3.0 V version)
Characteristics
Symbol
Test Condition
= 3.6 V, V = 0 V
Min
−500
6.43
Typ.
Max
500
Unit
nA
Input current (1)
I
V
V
V
IH1
DD
DD
DD
IN
(IN1 to IN4, IO01 to IO04, IO11 to IO14,
IO21 to IO24)
I
= 3.6 V, V = 3.6 V
9.0
−72
−7.2
15.0
µA
IL1
IN
= 3.6 V, V = 0 V、
IN
I
−120
−12
−51.4
−5.14
IH2L
IH2H
Input current (2)
(BRESET)
Low resistor side
µA
µA
V
= 3.6 V, V = 0 V、
DD
IN
I
High resistor side
Input current (3)
(TEST)
I
V
= 3.6 V, V = 3.6 V
10.0
18.0
1.25
27.0
IL3
DD
IN
Output current (1)
(IO11 to IO14, IO21 to IO24)
I
V
V
V
V
= 2.4 V, V = 1.9 V
OH
−1.5
2.08
−2.0
mA
OH1
DD
DD
DD
DD
I
= 2.4 V, V = 0.5 V
0.89
2.0
µA
OL1
OH2
OL
Output current (2)
(BZ)
I
= 2.4 V, V
= 1.9 V
OH
mA
I
= 2.4 V, V = 0.5 V
OL
OL2
V
V
=
OH
4
I
V
V
V
V
V
= 3.0 V,
−100
OH3
DD
− 0.5 V
= 1.125 V,
REG
Output current (3)
(SEGMENT)
= 2.25 V,
= 3.375 V,
= 4.5 V
µA
I
V
= 0.5 V
100
2
3
4
OL3
OL
V
V
=
OM
2
I
−50
OM3
− 0.5 V
V
V
=
OH
4
I
−100
OH4
− 0.5 V
V
V
V
V
V
= 3.0 V,
DD
I
V
= 0.5 V
100
50
OL4
OL
OM
= 1.125 V,
REG
Output current (4)
(COMMON)
= 2.25 V,
= 3.375 V,
= 4.5 V
µA
2
3
4
V
V
=
I
I
−50
OM4
− 0.5 V
3
V
V
=
OM
1
OM4
+ 0.5 V
V
V
V
V
= 3.0 V
= 3.0 V
(Note 1) 1.075 1.125 1.175
REG1
REG2
DD
DD
Constant output voltage
Quadrupler output voltage
V
V
(Note 2)
1.8
V
V
V
2.05
2.25
2.45
2
3
4
V
V
= 3.0 V
DD
3.175 3.375 3.575
4.3 4.5 4.7
= 1.125 V、Ta = 25°C
REG
Note 1: Constant output voltage for Quadrupler (V1)
Note 2: Constant output for low-speed oscillation circuit (V
)
XT
21
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
1.2
Unit
Display
ON
V
= 3.0 V,
= 2 MHz,
= 32 kHz,
DD
f
f
H
L
I
OP
mA
DD
Display
OFF
1.2
CPM3 mode
Display
ON
V
= 3.0 V,
= 32 kHz,
= STOP,
DD
30.0
29.0
21.0
20.0
1.2
f
f
L
H
Power supply voltage (1)
I
SLOW
DD
Display
OFF
(High-speed crystal oscillation circuit)
(Low-speed crystal oscillation circuit)
CPM1 mode
Display
ON
V
= 3.0 V,
= 32 kHz,
= STOP,
DD
µA
mA
µA
f
f
L
H
I
HOLD
STOP
DD
Display
OFF
HALT mode
V
= 3.0 V, f = STOP,
H
= STOP, STOP mode
DD
I
DD
f
L
Display
ON
V
= 3.0 V,
= 2 MHz,
= 32 kHz,
DD
1.5
f
f
H
L
I
OP
DD
Display
OFF
1.5
CPM3 mode
Display
ON
V
= 3.0 V,
= 32 kHz,
= STOP,
DD
33.0
32.0
20.0
19.0
1.2
f
f
L
H
Power supply voltage (2)
I
SLOW
DD
Display
OFF
(High-speed CR oscillation circuit)
(Low-speed crystal oscillation circuit)
CPM1 mode
Display
ON
V
= 3.0 V,
= 32 kHz,
= stop, HALT mode
DD
I
HOLD
STOP
f
f
DD
L
H
Display
OFF
V
= 3.0 V, f = STOP,
H
= STOP, STOP mode
DD
I
DD
f
L
22
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
TMP04090FXXXX, TMP04090XXXXS Example of Application Circuit (High-speed
crystal oscillation)
LCD
SEG1 to SEG60/COM1 to COM8
(SEG1 to SEG58/COM1 to COM10)
(SEG1 to SEG52/COM1 to COM16)
Piezoelectoric buzzer
BZ
TEST
V
V
V
V
V
XH
4
IN
(Note1)
XH
3
OUT
TMP04090FXXXX, JTMP04090XXXXS
XL
IN
2
(Note 2)
(Note 3)
XL
OUT
1
BRESET
XT
C
V
1
2
SS
DD
C
V
IN IN IN IN IO IO IO IO IO IO IO IO IO IO IO IO
1
2
3
4
01 02 03 04 11 12 13 14 21 22 23 24
Note 1: Recommended high-speed oscillator circuit capacitor: 22 pF (high-speed crystal)
Note 2: Recommended low-speed oscillator circuit capacitor: 15 pF
Note 3: A 0.1-µF capacitor is connected between BRESET and V
.
SS
23
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
Package Dimensions
Weight: 1.65 g (typ.)
24
2002-12-04
TMP04090FXXXX(ES),JTMP04090XXXXS(ES)
RESTRICTIONS ON PRODUCT USE
000707EBA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
25
2002-12-04
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