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MG150J7KS60 [TOSHIBA]

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT; 东芝GTR模块硅N沟道IGBT
MG150J7KS60
型号： MG150J7KS60
厂家： TOSHIBA    TOSHIBA
描述：

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
东芝GTR模块硅N沟道IGBT

晶体 晶体管 电动机控制 双极性晶体管 栅 局域网
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中文：  中文翻译
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MG150J7KS60  
TOSHIBA GTR Module Silicon N Channel IGBT  
MG150J7KS60 (600V/150A 7in1)  
High Power Switching Applications  
Motor Control Applications  
·
·
·
·
Integrates inverter and brake power circuit into a single package  
The electrodes are isolated from case.  
Low thermal resistance  
V
= 1.6 V (typ.)  
CE (sat)  
Equivalent Circuit  
P
14  
3
4
7
8
11  
12  
15  
U
V
W
B
16  
17  
18  
19  
20  
N
Signal Terminal  
1. Open  
5. Open  
9. Open  
13. Open  
17. G (X)  
2. Open  
3. G (U)  
7. G (V)  
11. G (W)  
15. TH2  
19. G (Z)  
4. E (U)  
8. E (V)  
12. E (W)  
16. G (B)  
20. E (L)  
6. Open  
10. Open  
14. TH1  
18. G (Y)  
1
2001-10-03  
MG150J7KS60  
Package Dimensions: 2-108G1B  
1. Open  
5. Open  
9. Open  
13. Open  
17. G (X)  
2. Open  
6. Open  
10. Open  
14. TH1  
18. G (Y)  
3. G (U)  
7. G (V)  
11. G (W)  
15. TH2  
19. G (Z)  
4. E (U)  
8. E (V)  
12. E (W)  
16. G (B)  
20. E (L)  
2
2001-10-03  
                                                        
                                                        
                                                                    
                                                                    
MG150J7KS60  
Maximum Ratings (Ta = 25°C)  
Stage  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
V
V
CES  
GES  
DC  
1 ms  
DC  
I
150  
C
Collector current  
Forward current  
A
A
Inverter  
I
300  
CP  
I
150  
F
1 ms  
I
300  
FM  
Collector power dissipation (Tc = 25°C)  
Collector-emitter voltage  
P
750  
W
V
C
V
CES  
V
GES  
600  
Gate-emitter voltage  
±20  
V
DC  
1 ms  
I
75  
C
Collector current  
A
I
150  
CP  
Brake  
Collector power dissipation (Tc = 25°C)  
P
375  
W
V
C
R
Reverse voltage  
V
600  
DC  
I
75  
F
Forward current  
A
1 ms  
I
150  
FM  
Junction temperature  
Storage temperature range  
Isolation voltage  
T
150  
°C  
°C  
V
j
T
-40~125  
2500 (AC 1 min)  
2 (M4)  
3 (M5)  
stg  
isol  
Module  
V
Terminal  
Mounting  
¾
¾
Screw torque  
N･m  
Electrical Characteristics (T = 25°C)  
j
1. Inverter stage  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±20 V, V = 0  
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
¾
¾
5.0  
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
±500  
1.0  
nA  
mA  
V
GES  
GE  
CE  
CE  
CE  
Collector cut-off current  
= 600 V, V  
= 0  
GE  
CES  
Gate-emitter cut-off voltage  
V
= 5 V, I = 150 mA  
6.5  
1.6  
¾
8.0  
GE (off)  
C
T = 25°C  
j
2.2  
V
= 15 V,  
GE  
Collector-emitter saturation voltage  
V
V
CE (sat)  
I
= 150 A  
C
T = 125°C  
j
2.2  
Input capacitance  
Turn-on delay time  
C
ies  
V
= 10 V, V = 0, f = 1 MHz  
GE  
25000  
¾
¾
pF  
CE  
t
1.00  
1.20  
0.50  
0.30  
2.2  
d (on)  
V
V
= 300 V, I = 150 A  
C
Switching time  
Turn-off time  
Fall time  
t
CC  
GE  
¾
off  
= ±15 V, R = 15 W  
ms  
G
t
f
¾
(Note 1)  
Reverse recovery time  
Forward voltage  
t
¾
rr  
V
I
= 150 A  
F
2.0  
V
F
Note 1: Switching time test circuit & timing chart  
3
2001-10-03  
                                                   
                                                   
MG150J7KS60  
2. Brake stage  
Characteristics  
Symbol  
Test Condition  
= ±20 V, V = 0  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
I
V
V
V
¾
¾
5.0  
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
±500  
1.0  
nA  
mA  
V
GES  
GE  
CE  
CE  
CE  
Collector cut-off current  
Gate-emitter cut-off voltage  
= 600 V, V  
= 0  
GE  
CES  
V
= 5 V, I = 75 mA  
6.5  
1.6  
¾
8.0  
GE (off)  
C
T = 25°C  
j
2.2  
V
= 15 V,  
GE  
Collector-emitter saturation voltage  
V
V
CE (sat)  
I
= 75 A  
C
T = 125°C  
j
2.2  
Input capacitance  
Turn-on delay time  
C
ies  
V
= 10 V, V  
= 0, f = 1MHz  
GE  
12000  
¾
¾
pF  
CE  
t
1.00  
1.20  
0.50  
1.0  
d (on)  
V
V
= 300 V, I = 75 A  
CC  
GE  
C
Switching time  
= ±15 V, R = 24 W  
ms  
Turn-off time  
Fall time  
t
¾
G
off  
(Note 1)  
t
¾
f
Reverse current  
Forward voltage  
I
V
= 600 V  
R
¾
mA  
V
R
V
I
= 75 A  
F
2.1  
2.6  
F
Note 1: Switching time test circuit & timing chart  
3. Module (Tc = 25°C)  
Characteristics  
Zero-power resistance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
R25  
ITM = 0.2 mA  
¾
¾
¾
¾
¾
¾
¾
100  
4390  
¾
¾
kW  
B value  
B25/85  
Tc = 25°C/Tc = 85°C  
Inverter IGBT stage  
Inverter FRD stage  
Brake IGBT stage  
Brake FRD stage  
¾
¾
K
0.167  
0.313  
0.333  
1.000  
¾
¾
Junction to case thermal resistance  
Case to fin thermal resistance  
R
°C/W  
°C/W  
th (j-c)  
th (c-f)  
¾
¾
R
0.05  
Switching Time Test Circuit & Timing Chart  
90%  
V
GE  
10%  
R
G
G
-V  
GE  
V
CC  
I
rr  
90%  
t
rr  
I
C
R
10%  
10%  
t
t
t
f
d (on)  
d (off)  
4
2001-10-03  
MG150J7KS60  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2001-10-03  

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