MP3001 [TOSHIBA]
TRANSISTOR 4 A, 50 V, 3 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power;
| 型号： | MP3001 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 4 A, 50 V, 3 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power 开关 晶体管 |
| 文件： | 总24页 (文件大小：753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Po w e r Mo d u le s
PRODUCT GUIDE
CONTENTS
1. Product List
3
4
5
6
6
7
8
2. Introduction to the Products and Their Features
3. Structure and Dimensions
4. Power Module Packages
5. System Diagram of Power Module Products
6. Power Module Product Matrix
7. Product Line-ups Listed by Package
Power Transistor Modules
S-10 Series MP4005~, MP4101~
S-12 Series MP4301~, MP6301
F-12 Series MP4501~, MP6901
Power MOSFET Modules
8
9
10
S-10M Series MP4208~
S-12M Series MP4410~, MP6404
F-12M Series MP4711
11
12
13
8. Toshiba Power Module Products
9. Applications and Line-ups
14
15
20
21
22
23
23
10. Typical Applications
11. Dimensions of Power Module Packages
12. Power Module Packing
13. Final-Phase Production List
14. List of Discontinued Products
External Appeaiance of Power Modules
Discrete power devices
Power modules
PNP × 3 + NPN × 3
(NPN or PNP) × 4
+ flyback diode × 4
2
P ro d u c t Lis t
Product No.
Page
Product No.
Page
MP4005
MP4006
MP4009
MP4013
MP4015
MP4020
MP4021
MP4024
MP4025
MP4101
MP4104
MP4208
MP4209
MP4210
MP4211
MP4212
MP4301
MP4303
MP4304
MP4305
MP4410
8
8
MP4411
MP4412
MP4501
MP4502
MP4503
MP4504
MP4506
MP4507
MP4508
MP4513
MP4514
MP4711
MP6301
MP6404
MP6901
12
12
10
10
10
10
10
10
10
10
10
13
9
8
8
8
8
8
8
8
8
8
11
11
11
11
11
9
12
10
9
9
9
12
3
In t ro d u c t io n t o t h e P ro d u c t s a n d Th e ir Fe a t u re s
Rapid advances are being made in the miniaturization and level of integration of
electronic devices, not only in the signal processing stages but also in the power
stages.
Intelligent power devices, hybrid ICs and SMD technologies (among others) have
helped to achieve these advances, but power module technology is the structur-
ally simplest means of providing multiple elements in a single unit.
Power modules enable power devices to be easily mounted at high densities, and
are ideal for use in general-purpose solenoid drives, matrix LED drives, printer
head pin drives and as the power drivers for small motors such as stepping mo-
tors, forward-reverse control motors and 2-phase to 5-phase motors.
Features of MP Series
Features of MP Series
of Power Modules
of Power Modules
MP Series Features
Discrete multi-chip products
1
Stable operation is enabled without parasitic elements such as ICs between units.
Low loss and durability of discrete elements is maintained.
Can be used in high-power applications because of the greater permissible loss and
because operating temperatures are limited only by junction temperatures.
Voltage rating: 60 V~120 V. Current rating: 1.5 A~10 A
Line-ups include three package types and eight types of circuit structure.
Wide range of built-in chips.
2
3
4
4-V drive MOSFETs
MOS
With built-in surge-adsorber
Zener diodes
Built-in FWD
No FWD
Bipolar
Darlington
*
High-β (high-hFE, Low-VCE(sat) single-transistor)
BRT (built-in bias resistor)
Zener voltage variation: 60 V ± 10 V, 80 V ± 10 V, 100 V ± 15 V
FWD: Flywheel diode
*
4
S t ru c t u re a n d Dim e n s io n s
Toshiba's power modules are basically structured as multi-chip units with multiple discrete chips such as transistors
and diodes built onto a frame. The required circuit structure is implemented by adjusting the frame dimensions and
the bonding wire connections as required.
Power modules are therefore better suited to mass production than hybrid ICs. It is also relatively simple to develop
different types of power module with the same circuit structure, but using transistor chips with differeht characteristics.
In addition, the frame dimensions and bonding can be varied to yield a range of circuit configurations.
Figure 1 shows the internal structure of a full-mold type power module. Figure 2 shows the internal structure of a
power module with an insulated heat sink for ues in high-power applications. As shown in Figure 2, the internal
circuitry of the power module is insulated using an insulated heat sink and resin. This means that no insulation is
required when mounting the device on an external heat sink. This makes the mounting process simpler.
Figure 1. Internal structure of full-mold type
3
4
2
5
1
1
2
3
5
Mold resin
Lead
Frame
Bonding wire
4
Transistor chip
Figure 2. Internal structure of type with insulated heat sink
5
5
6
6
2
4
3
1
2
1
1
3
5
Mold resin
Lead
Bonding wire
2
4
6
Frame
Transistor chip
Heat sink
5
P o w e r Mo d u le P a c k a g e s
Table 1.
Packaging and features of power modules
Name
-
-
-
S 10
S 12
F 12
L1
L2
L3
Appearance
25.2
9.0
7.5
4.0
31.5
10.5
10.0
4.0
31.5
L1 (mm)
16.1
L2 (mm)
10.0
L3 (mm)
Thickness (mm)
5.1
Full-mold type
Type with insulated heat sink
Structure
SIP 10Pin
SIP 12Pin
2.54
3.9
SIP 12Pin
No. of Leads
Lead Pitch (mm)
Weight (g)
2.54
2.1
4
2.54
6
4, 6
4, 6
No. of Transistors
Ta = 25˚C
Tc = 25˚C
4
4.4
5
Total Permissible
Loss (W)
*
28
25 to 40
Permissible loss is shown for typical products.
Note: In the S-12 and F-12 packages, the stand-off varies according to the type.
*
S ys t e m Dia g ra m o f P o w e r Mo d u le P ro d u c t s
P o w e r m o d u le s
Power transistor modules
Power MOSFET modules
Fu ll-m o ld t yp e p a c k a g e s
SIP 10-Pin 2.54-mm pitch
(4-in-1 package)
S-10 Series
S-10M Series
MP4005~
MP4101~
MP4208~
SIP 12-Pin 2.54-mm pitch
(4-in-1 package)
S-12 Series
S-12M Series
MP4301~
MP6301
(6-in-1 package)
MP4410~
MP6404
P a c k a g e s w it h in s u la t e d h e a t s in k
SIP 12-Pin 2.54-mm pitch
F-12 Series
F-12M Series
(4-in-1 package)
(6-in-1 package)
MP4711
MP4501~
MP6901
6
P o w e r Mo d u le P ro d u c t Ma t rix
Rating
Package Type
Package Name
Lead Type
Full-Mold Type Package
Package with Insulated Heat Sink
S-10
SIP-10
4 in 1
S-12
F-12
SIP-12
SIP-12
No. of Chips
4 in 1
6 in 1
4 in 1
6 in 1
V
(V)
I
Circuit
Structure
(A)
N(P)
+
N(P)
with
FB-Di
×
2
2
N(P) × 2
+
N(P) × 2
with
N × 4
N × 2
+
P × 2
N × 3
+
P × 3
N × 4
or
P × 4
N × 2
+
P × 2
N × 3
+
P × 3
×
or
P × 4
Chip
Classification
FB-Di
60 ± 10
60 ± 10
60 ± 10
60 ± 10
80
1.5
2
DTN + zener + R
DTN + zener
DTN + zener
DTN + zener
DTN
B
MP4025
MP4020
MP4101
MP4015
4
5
2
MP4006
- 80
- 2
2
DTN
MP4013
80 ± 10
80
DTN + zener
High-β
MP4304
3
80
3
DTN
MP6301
- 80
- 3
4
DTN
80
DTN
MP4503 MP6901
MP4005
- 80
- 4
2
DTN
MP4021
100 ± 15
100
DTN + zener
DTN
MP4303
MP4301
2
MP4502
MP4514
100
3
DTN
MP4501
MP4513
100
4
DTN
MP4104
MP4024
100 ± 15
100
3
DTN + zener + R
B
5
DTN
MP4305
MP4410
MP4504
MP4506
MP4508
- 100
100
- 5
5
DTN
DTN
MP4507
MP4009
MP4210
- 100
60
- 5
5
DTN
L2 - π - MOS
L2 - π - MOS
L2 - π - MOS
L2 - π - MOS
L2 - π - MOS
MP4212
MP6404
- 60
- 5
- 5
3
MP4211
MP4208
- 60
100
MP4209
MP4411
MP4412
MP4711
100
5
Zener: Built-in zener diode between C-B
DTN: Darlington transistor
High-β: High-hFE single transistor
FB-Di: Built-in diode for absorbing flyback voltage
RB: Built-in base series resistor
7
P ro d u c t Lin e -u p s Lis t e d b y P a c k a g e
Power Transistor Modules
S e rie s
S -10
(4-in-1 package)
10-pin SIP
Full mold
hFE
VCE(sat) (V)
Absolute Maximum ratings
IC
VCEO
PT
(Ta=25˚C)
(W)
VCE
IC
Chip
I
C
IB
Product No.
Circuit
Remarks
(min)
(max)
(A) (mA)
(A)
± 4
± 2
(V)
(V)
± 2
± 2
(A)
± 1
± 1
NPN × 2 + PNP × 2
NPN × 2 + PNP × 2
PNP × 4
MP4005
MP4006
MP4009
MP4013
MP4015
MP4020
MP4021
MP4024
MP4025
MP4101
MP4104
± 80
4
4
4
4
4
4
4
4
4
4
4
DTN
2000
2000
1000
2000
1000
2000
2000
2000
2000
2000
2000
± 1.5
± 1.5
± 3
±1
± 6
± 1
12
1
D
D
B
C
C
C
C
C
C
C
A
± 80
DTN
–
5
–
100
DTN
–
3
2
4
2
2
2
2
2
2
–
3
1
3
1
1
1
–
2.0
–
3
1
3
1
1
1
–
NPN × 4
2
80 ± 10
60 ± 10
60 ± 10
100 ± 15
100 ± 15
60 ± 10
60 ± 10
100
DTN with zener
DTN with zener
DTN with zener
DTN with zener
BRT DTN with zener
BRT DTN with zener
DTN with zener
DTN
1.5
NPN × 4
5
2
2.0
1.5
1.5
1.5
1.2
1.5
1.5
10
1
NPN × 4
NPN × 4
2
1
NPN × 4
3
4.2 V
NPN × 4
1.5
4
0.7
1
0.5 4.2 V
NPN × 4
3
10
3
NPN × 4
4
1.5
1.5
With zener: Built-in zener diode between C-B
DTN: Darlington transistor
BRT: Transistor with built-in bias resistance
Circuit blocks
A
B
1
10
3
5
7
9
2
4
6
8
2
4
6
8
1
10
3
5
7
9
C
D
10
3
5
7
9
6
8
4
7
9
2
4
6
8
3
5
2
1
10
1
8
Power Transistor Modules
S e rie s
S -12
(4-in-1 and 6-in-1 package)
12-pin SIP
Full mold
Absolute Maximum ratings
hFE
VCE(sat) (V)
IC
VCEO
PT
(Ta=25˚C)
(W)
VCE
IC
Chip
I
C
I
B
Circuit
Remarks
Product No.
(max)
(min)
(A)
(mA)
(A)
3
(V)
100
100
80
(V)
2
(A)
1.5
1
MP4301
MP4303
MP4304
MP4305
MP6301
4.4
4.4
4.4
4.4
4.4
DTN
DTN
2000
2000
600
1.5
1.5
0.5
1.5
1
3
1
A
A
A
B
C
NPN
NPN
NPN
PNP
NPN
×
×
×
×
×
4
2
2
4
3
High-β
DTN
2
1
1.5
15
4
–
5
3
–
100
80
2000
2000
–
5
2
–
3
1
–
1.5
1.8
–
3
2
–
6
4
4
±
±
DTN
±
±
±
±
±
3 + PNP × 3
High-β: high-hFE single transistor
DTN: Darlington transistor
: Built-in diode for absorbing flyback voltage
Circuit blocks
A
B
6
7
2
3
5
4
9
10 11
12
5
8
12
1
8
1
6
7
2
3
4
9
10 11
C
12
11
7
10
6
4
2
3
9
5
8
1
9
P ro d u c t Lin e -u p s Lis t e d b y P a c k a g e
Power Transistor Modules
S e rie s
F-12
(4-in-1 and 6-in-1 package)
12-pin SIP
Insulated heat sink
Absolute Maximum ratings
VCE(sat) (V)
hFE
VCE
IC
IC
VCEO
PT (W)
Chip
I
C
I
B
Circuit
Remarks
Product No.
(max)
(min)
(V)
2
(A)
1.5
1.5
± 1
(A)
1.5
1.5
(mA)
(A)
3
(V)
Ta=25˚C Tc=25˚C
MP4501
MP4502
MP4503
MP4504
MP4506
MP4507
MP4508
MP4513
MP4514
MP6901
100
100
5
5
5
5
5
5
5
5
5
5
25
25
25
25
25
25
25
25
25
25
DTN
DTN
DTN
DTN
DTN
DTN
DTN
DTN
DTN
DTN
2000
2000
2000
2000
1000
1000
1000
1000
4000
2000
1.5
1.5
3
3
C
A
D
B
A
D
B
C
A
E
NPN
NPN
NPN
PNP
NPN
NPN
PNP
NPN
NPN
NPN
×
×
×
×
×
×
×
×
×
×
4
3
2
4
±
4
5
5
5
5
5
3
4
±
80
± 2
±
1.5
1.5
2.0
2.0
2.0
2.0
1.5
1.5
±
3
3
3
3
3
3
1
3
±
6
6
2 + PNP
×
×
2
2
–
–
100
100
100
100
100
100
–
5
3
–
3
3
–
–
–
4
12
12
12
12
1
4
±
±
± 3
± 3
±
±
±
2 + PNP
–
–
–
3
3
4
–
3
3
1
–
–
–
4
4
4
±
±
80
± 2
± 1
±
±
±
6
3 + PNP
×
3
: Built-in diode for absorbing flyback voltage
DTN: Darlington transistor
Circuit blocks
A
B
C
3
2
6
4
7
10
2
3
4
6
9
7
11
10
2
3
4
9
10 11
5
8
12
5
8
12
1
1
1
6
5
8
12
9
11
7
D
E
4
7
12
7
10
8
12
5
9
11
3
6
9
2
4
2
5
8
1
1
11
6
10
Power MOSFET Modules
S e rie s
S -10 M
(4-in-1 package)
10-pin SIP
Full mold
Absolute Maximum ratings
RDS(ON)max
VGS
RDS(ON)max
ID
VDSS
PDT
(Ta=25˚C)
(W)
ID
VGS
(V)
ID
Product No.
Circuit
Remarks
(Ω)
(Ω)
(A)
(V)
(V)
(A)
(A)
MP4208
MP4209
MP4210
MP4211
MP4212
–
5
3
5
5
5
–
60
4
4
4
4
4
0.3
0.35
–
10
10
10
10
10
–
2.5
0.5
0.45
–
4
4
4
4
4
–
2.5
D
A
A
B
C
P-ch
N-ch
N-ch
P-ch
N-ch
×
×
×
×
4
4
4
4
100
60
2
2.5
2.5
2.5
2
2.5
2.5
2.5
0.16
0.32
–
–
60
60
0.19
–
–
0.28
–
–
±
±
0.16/0.19
±
±
0.32/0.28
±
±
×
2 + P-ch × 2
Equivalent circuits
A
B
D
1
2
10
3
5
7
9
4
6
8
2
1
4
6
8
10
3
5
7
9
C
10
1
2
10
6
2
8
4
7
9
4
6
8
3
5
3
5
7
9
1
11
P ro d u c t Lin e -u p s Lis t e d b y P a c k a g e
Power MOSFET Modules
S e rie s
S -12 M
(4-in-1 and 6-in-1 package)
12-pin SIP
Full mold
Absolute Maximum ratings
RDS(ON)max
RDS(ON)max
ID
VDSS
VGS
ID
VGS
ID
PDT (W)
Product No.
Circuit
Remarks
(Ω)
(Ω)
Ta=25˚C Tc=25˚C
(A)
5
(V)
60
(V)
10
10
10
(A)
(V)
4
(A)
2.5
2
MP4410
MP4411
MP4412
MP6404
4.4
4.4
4.4
4.4
28
28
28
36
0.16
0.35
2.5
0.31
0.45
A
A
A
B
N-ch
N-ch
N-ch
N-ch
×
×
×
4
3
100
100
2
2.5
2.5
4
4
5
0.23
0.30
4
2.5
4
±
5
±
60
0.16/0.19
±
10
±
0.32/0.28
±
4
±
2.5
×
3 + P-ch × 3
: Diode for absorbing flyback voltage
Equivalent circuits
5
12
A
B
2
3
4
9
10 11
4
2
6
11
3
7
9
10
1
6
8
5
8
12
7
1
12
Power MOSFET Modules
S e rie s
F-12 M
(4-in-1 and 6-in-1 package)
12-pin SIP
Insulated heat sink
Absolute Maximum ratings
RDS(ON)max
RDS(ON)max
ID
VDSS
VGS
ID
VGS
ID
PDT (W)
Product No.
Circuit
Remarks
(Ω)
(Ω)
Ta=25˚C Tc=25˚C
(A)
(V)
(V)
(A)
(V)
(A)
MP4711
5
100
5
36
0.23
10
2.5
0.30
4
2.5
A
N-ch × 4
: Diode for absorbing flyback voltage
Equivalent circuits
A
2
3
4
9
10 11
1
6
5
8
12
7
13
To s h ib a P o w e r Mo d u le P ro d u c t s
Application
Compatibility
Device
3-phase motors
Miniaturization
Higher precision, lower loss
Power MOS
3-phase bridge
MP6404
(± 60 V / ± 5 A, MOS, S-12)
MP6301
(± 80 V / ± 3 A, DTN, S-12)
Elimination of C-E diode
DC brush-type motors
Miniaturization
Higher precision, lower loss
MP4212
(± 60 V / ± 5 A, MOS, S-10)
Power MOS H-switch
MP4503
(± 80 V / ± 4 A, DTN, F-12)
MP4507
Elimination of C-E diode
(External F W D for
lower trr loss)
(± 100 V / ± 5 A, DTN, F-12)
Office automation equipment
Higher power supply
voltages
Increased C-B voltage for
zener diode
60 V→80 V→100 V
MP4021
(100 ± 15 V / 2 A, DTN, S-10)
Printers,
LED drive
Hige-side switching
MP4009
(– 100 V / – 5 A, DTN, S-10)
MP4305
PNP/P-ch
module expansion
(– 100 V / – 5 A, DTN, S-12)
MP4203, MP4211
(– 60 V / – 5 A, MOS, S-10)
Features
Low ON-resistance power
MOSFET
Power MOSFET modules
MP42xx, MP44xx, MP4711,
MP6404
Lower power loss
(L2 - π - MOS V chip)
MP4304
(80 V / 3 A, high-β, S-12)
Single high-β
Lower component counts
and greater space
utilization
Built-in base series resistance
Development of
MP4024
(100 ± 15 V / 3 A, S-10)
MP4025
darlington chip
(60 ± 10 V / 1.5 A, S-10)
14
Ap p lic a t io n s a n d Lin e -u p s
F motor
driver
Application
P rin t e rs
Head driver
CR motor driver
Internal Zener Clamp Method for Head Pins or Stepping Motors
Extremely simple structure
Recommended type: series with built-in zener diode between C-B
Rating
Product No.
Structure
Package
Voltage (V) Current (A)
MP4020
MP4021
Darlington
Darlington
60 ± 10
2
2
S-10
S-10
100 ± 15
External Zener Clamp Method for Head Pins and Stepping Motors
Increased freedom in selecting clamp values and reduced clamp value fluctuation make it comparatively easy to
achieve faster printing speeds.
Recommended type: series with built-in FB-Di
Rating
Product No.
Structure
Package
Voltage (V) Current (A)
MP4303
MP4301
MP4304
MP4501
MP4513
Darlington
Darlington
High-β
100
100
80
2
3
3
3
5
S-12
S-12
S-12
F-12
F-12
Darlington
Darlington
100
100
FB-Di: Diode for regenerating flyback energy
Two-Stage Energy Regeneration Method for Head Pin Drives
Print speed and quality is increased the incorporation of transistors for switching and diodes for energy
regeneration at both ends of the drive coil.
Recommended type
Rating
VCC
Product No. Polarity Structure
Package
Voltage (V) Current (A)
MP4305
MP4303
MP4301
MP4304
MP4501
MP4514
MP4513
PNP Darlington
NPN Darlington
NPN Darlington
–
100
100
100
80
–
5
2
3
3
3
3
5
S-12
S-12
S-12
S-12
F-12
F-12
F-12
VCC
VCC
NPN
High-β
NPN Darlington
NPN Darlington
NPN Darlington
100
100
100
15
Ap p lic a t io n s a n d Lin e -u p s
Unit: mm
Unipolar drive
25.2
Application
P rin t e rs
S-10
4-in-1 module for 2-phase
stepping motor
NPN darlington with built-in zener diode
MP4020
MP4021
V
CEO (V)
60 ± 10
100 ± 15
3
5
7
9
I
C
(A)
(W) (Ta=25˚C)
2
4
2
4
P
T
2
1
4
6
8
h
FE (min)
CE (sat) (V)
2000
1.5 (max)
2000
1.5 (max)
V
10
Built-in C-B zener diode for surge absorption
NPN darlington with built-in R
and built-in zener diode
B
MP4024
VCEO (V)
100 ± 15
3
5
7
9
I
C
(A)
(W) (Ta=25˚C)
3
4
P
T
2
4
6
8
h
FE (min)
2000
1.5 (max)
1
10
VCE (sat) (V)
Built-in RB = 3.6kΩ
4-V drive and lower component counts are achieved by building
in bias resistance.
Built-in zener diode performs surge absorption.
16
Unit: mm
Unipolar drive
31.5
Application
Mo t o rs
S-12
4-in-1 module for 2-phase
stepping motor
Products with built-in diodes for absorbing flyback voltage
NPN darlington
MP4301
MP4303
2
3
4
9
10
11
V
CEO (V)
100
3
100
2
I
C
(A)
(W) (Ta=25˚C)
PT
4.4
4.4
1
6
5
8
12
h
FE (min)
CE (sat) (V)
2000
1.5 (max)
2000
1.5 (max)
V
7
NPN High-β
MP4304
V
CEO (V)
80
3
2
3
5
4
9
10 11
I
C
(A)
(W) (Ta=25˚C)
PT
4.4
1
6
8
12
h
FE (min)
600
7
V
CE (sat) (V)
0.5 (max)
High-hFE single transistor
Low VCE(sat) for lower loss
MP4410
60
N-ch MOSFET
MP4411
MP4412
V
DSS (V)
100
100
2
3
4
9
10
12
11
I
D
(A)
5
3
5
P
DT (W) (Ta=25˚C)
4.4
4.4
4.4
1
6
5
8
R
DS (ON) (Ω)
0.16 (max)
0.35 (max)
0.23 (max)
7
Low ON-resistance MOSFET for lower loss
4-V gate drive
17
Ap p lic a t io n s a n d Lin e -u p s
Unit: mm
31.5
Application
31.5
Mo t o rs
F-12
S-12
6-in-1 module for
3-phase motor
P-ch × 3 + N-ch × 3
MP6404
MP6801
V
DSS (V)
± 60
± 60
5
12
I
D
(A)
± 5
± 10
4
2
6
11
P
DT (W) (Tc=25˚C)
36
160/190 mΩ (max)
S-12
40
80/125 mΩ (max)
F-12
3
8
7
9
10
R
DS (ON) (N-ch/P-ch)
Package
1
High current and low ON-resistance for lower loss
4-V gate drive
PNP × 3 + NPN × 3
MP6301
MP6901
V
CEO (V)
± 80
± 3
± 80
± 4
12
R1 R2
I
C
(A)
(W) (Ta=25˚C)
7
10
4
PT
4.4
25*
3
6
9
h
FE (min)
2000
S-12
2000
F-12
2
5
8
Package
Tc = 25˚C
R1 R2
1
11
*
18
Unit: mm
31.5
Application
25.2
F-12
DCM
Mo t o rs
S-10
4-in-1 module for forward
and reverse operation of
DC motor with brush
P-ch × 2 + N-ch × 2
MP4212
10
V
DSS (V)
± 60
± 5
4
6
8
I
D
(A)
P
DT (W) (Ta=25˚C)
7
3
9
5
R
DS (ON) (N-ch/P-ch) (Ω)
0.16/0.19 (max)
S-10
Package
2
4
1
Low ON-resistance MOSFET for lower loss
4-V gate drive
PNP × 2 + NPN × 2
MP4005
MP4006
MP4503
MP4507
V
CEO (V)
± 80
± 4
± 80
± 2
± 80
± 4
± 100
± 5
7
R1 R2
IC
(A)
8
12
5
P
T
(W) (Ta=25˚C)
4
4
25*
25*
9
11
4
2
h
FE (min)
2000
S-10
2000
S-10
2000
F-12
1000
F-12
1
Package
R1
6
Tc = 25˚C
*
19
Typ ic a l Ap p lic a t io n s
Actuator (Motor and Solenoid) Drivers Incorporated into Moving Parts
Toshiba Power Modules
Printers
Photocopiers
Head pin and stepping
motor drive
MP4000 Series
MP4100 Series
MP4300 Series
MP4400 Series
Motor drive
MP4000 Series
MP4100 Series
MP4212
MP4503
MP4507
MP6901
Small motors
and solenoids
Fax machines
Word-processors
All MP Series
MP4024
Stepping motor drive
MP4000 Series
Printer stepping motor drive
MP4000 Series
MP6404
MP4100 Series
MP4100 Series
MP4400 Series
Vending
machines
Air-conditioners
Fan motor drive
MP6301
MP4000 Series
MP4100 Series
MP6404
MP6901
20
Dim e n s io n s o f P o w e r Mo d u le P a c k a g e s
Some S-10 and S-12 products are available with short leads
Unit: mm
Standard long lead
Short lead
S-10
S-12
F-12
25.2 ± 0.2
25.2 ± 0.2
2.54
0.55 ± 0.15
1.1 ± 0.15
2.54
0.55 ± 0.15
1.1 ± 0.15
1
10
1
10
Available only as set out in the diagram 2-25A1A.
Unit: mm
Standard long lead
Short lead
31.5 ± 0.2
31.5 ± 0.2
2.54
0.85 ± 0.15
1.3 ± 0.15
2.54
0.85 ± 0.15
1.3 ± 0.15
1
12
1
12
Available with products with 2.2-mm stand-off:
Unit: mm
Standard long lead
Short stand-off type
31.5 ± 0.2
31.5 ± 0.2
1.7 ± 0.1
1.7 ± 0.1
24.4 ± 0.2
24.4 ± 0.2
7.55
3.55
7.55
3.8
3.55
3.8
3.2
3.2
2.54
0.85 ± 0.15
1.3 ± 0.15
2.54
0.85 ± 0.15
1.3 ± 0.15
1
12
1
12
Some products have a stand-off which differs from the standard 3.5 mm.
21
P o w e r Mo d u le P a c k in g
1
2
3
Stick
Unit: mm
Stick for S-10 Package
Plug
Module
525
5.5
18.6
Plug
Contents of stick: 20 pcs
Stick
Unit: mm
Plug
Stick for S-12 Package
Module
660
6.1
23.3
Plug
Contents of stick: 20 pcs
Plug
Unit: mm
Stick for F-12 Package
Stick
Module
7.8
660
29.4
Plug
Contents of stick: 20 pcs
22
Fin a l-P h a s e P ro d u c t io n Lis t
Final-Phase Production
Product No. of Recommended
Alternative Product
Product No.
The table right lists products in final-phase production.
Please consider using the correspcnding recom-
mended alternative product instead of the intended fi-
nal-phase production.
MP4201
MP4202
MP4203
MP4207
MP4401
MP4403
MP4703
MP6403
MP6801
MP4209
MP4210
MP4211
MP4212
MP4411
MP4412
MP4711
MP6404
MP6404
Lis t o f Dis c o n t in u e d P ro d u c t s
The table below lists discontinued products. Please consider using the corresponding recommended alternative prod-
uct instead of the intended discontinued products.
Product No. of Recommended
Alternative Product
Product No. of Recommended
Alternative Product
Product No.
Product No.
MP3001
MP3002
MP3003
MP3004
MP3005
MP3006
MP3007
MP3008
MP3009
MP3010
MP3011
MP3102
MP3103
MP3107
MP3201
MP3202
MP3801
MP4001
MP4002
MP4003
MP4004
MP4008
MP4010
MP4011
MP4012
MP4014
MP4017
MP4018
MP4022
MP4023
MP4025
MP4302
MP4101
MP4307
MP4402
MP4404
MP4406
MP4407
MP4408
MP4409
MP4505
MP4511
MP4512
MP4605
MP4701
MP4702
MP4704
MP4708
MP4709
MP4710
MP4801
MP5001
MP5301
MP5302
MP5401
MP5402
MP6001
MP6002
MP6003
MP6004
MP6005
MP6101
MP6302
MP6401
MP6902
MP4305
MP4412
MP4412
MP4410
MP4410
MP4412
MP4412
MP4513
MP4504
MP4503
MP4513
MP4711
MP4711
MP4711
MP4711
MP4104
MP4013
MP4104
MP4009
MP4104
MP4009
MP4104
MP4009
MP4104
MP4104
MP4009
MP4209
MP4101
MP4020
MP4104
MP4104
MP4021
MP4104
MP4015
MP4101
MP4104
MP4021
MP4009
MP4021
MP4020
MP4210
MP4305
MP6301
MP6404
MP6901
23
OVERSEAS SUBSIDIARIES AND AFFILIATES
000816(D)
Toshiba Electronics Europe GmbH
Toshiba Electronics Asia, Ltd.
Toshiba America
Electronic Components, Inc.
Düsseldorf Head Office
Hansaallee 181, D-40549 Düsseldorf
Germany
Hong Kong Head Office
Level 11, Top Glory Insurance Building, Grand Century
Place, No.193, Prince Edward Road West,
Mong Kok, Kowloon, Hong Kong
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A.
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Tel: (949)455-2000 Fax: (949)859-3963
MünchenOffice
Tel: 2375-6111 Fax: 2375-0969
Boulder, CO
Büro München Hofmannstrasse 52,
D-81378, München, Germany
Tel: (089)748595-0 Fax: (089)748595-42
Beijing Office
3100ArapahoeAvenue,Ste.500,
Boulder, CO 80303, U.S.A.
Tel: (303)442-3801 Fax: (303)442-7216
Rm 714, Beijing Fortune Building,
No.5 Dong San Huan Bei-Lu, Chao Yang District,
Beijing, 100004, China
Toshiba Electronics France SARL
Immeuble Robert Schumann 3 Rue de Rome,
F-93561, Rosny-Sous-Bois, Cedex, France
Tel: (1)48-12-48-12 Fax: (1)48-94-51-15
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Tel: (010)6590-8795 Fax: (010)6590-8791
ChengduOffice
Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road,
XinhuaAvenue, Chengdu, 610017, China
Tel: (028)675-1773 Fax: (028)675-1065
Tel: (561)374-6193 Fax: (561)374-6194
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Centro Direzionale Colleoni
Deerfield, IL(Chicago)
One Pkwy., North, Suite 500, Deerfield,
Palazzo Perseo Ingr. 2-Piano 6,
Via Paracelso n.12,
Shenzhen Office
IL60015-2547,U.S.A.
Rm 3010-3012, Office Tower Shun Hing Square,
Di Wang Commercial Centre, 333 ShenNan
EastRoad, Shenzhen, 518008, China
Tel: (0755)246-1582 Fax: (0755)246-1581
Tel: (847)945-1500 Fax: (847)945-1044
1-20041 Agrate Brianza Milan, Italy
Tel:(039)68701 Fax:(039)6870205
Duluth,GA(Atlanta)
3700 Crestwood Parkway, Ste. 460,
Toshiba Electronics España, S.A.
Duluth, GA 30096, U.S.A.
Parque Empresarial San Fernando Edificio Europa,
a
Tel: (770)931-3363 Fax: (770)931-7602
1
Planta, ES-28831 Madrid, Spain
Toshiba Electronics Korea Corporation
Tel: (91)660-6700 Fax:(91)660-6799
Edison, NJ
2035 Lincoln Hwy. Ste. #3000, Edison
Seoul Head Office
14/F, KEC B/D, 257-7 Yangjae-Dong,
Toshiba Electronics(UK) Limited
Riverside Way, Camberley Surrey,
GU15 3YA, U.K.
NJ 08817, U.S.A.
Seocho-ku, Seoul, Korea
Tel: (732)248-8070 Fax: (732)248-8030
Tel: (02)589-4334 Fax: (02)589-4302
Tel: (01276)69-4600 Fax: (01276)69-4800
OrangeCounty, CA
2 Venture Plaza, #500 Irvine, CA 92618, U.S.A.
Gumi Office
Toshiba Electronics Scandinavia AB
Gustavslundsvägen12, 2ndFloor
S-161 15 Bromma, Sweden
6/F, Ssangyong Investment Securities B/D,
56 Songjung-Dong, Gumi City
Kyeongbuk,Korea
Tel: (949)453-0224 Fax: (949)453-0125
Portland, OR
Tel: (08)704-0900 Fax: (08)80-8459
Tel:(82)54-456-7613 Fax: (82)54-456-7617
1700 NW 167th Place, #240,
Beaverton, OR 97006, U.S.A.
Tel: (503)629-0818 Fax: (503)629-0827
Toshiba Electronics Asia
(Singapore) Pte. Ltd.
Singapore Head Office
438BAlexandraRoad, #06-08/12Alexandra
Technopark,Singapore119968
Tel: (278)5252 Fax: (271)5155
Toshiba Technology Development
(Shanghai) Co., Ltd.
23F, ShanghaiSenmaoInternationalBuilding, 101
Yin Cheng East Road, Pudong New Area, Shanghai,
200120,China
Richardson, TX(Dallas)
777 East Campbell Rd., Suite 650, Richardson,
TX 75081, U.S.A.
Tel: (972)480-0470 Fax: (972)235-4114
Tel: (021)6841-0666 Fax: (021)6841-5002
BangkokOffice
San Jose Engineering Center, CA
1060 Rincon Circle, San Jose, CA 95131, U.S.A.
Tel:(408)526-2400 Fax:(408)526-2410
135 Moo 5 Bangkadi Industrial Park, Tivanon Rd.,
BangkadiAmphurMuangPathumthani, Bangkok, 12000,
Thailand
Tsurong Xiamen Xiangyu Trading
Co., Ltd.
8N, Xiamen SEZ Bonded Goods Market Building,
Xiamen, Fujian, 361006, China
Tel: (0592)562-3798 Fax: (0592)562-3799
Wakefield,MA(Boston)
401 Edgewater Place, Suite #360, Wakefield,
Tel: (02)501-1635 Fax: (02)501-1638
Toshiba Electronics Trading
(Malaysia)Sdn. Bhd.
Kuala Lumpur Head Office
Suite W1203, Wisma Consplant, No.2,
Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,
Selangor Darul Ehsan, Malaysia
MA01880-6229, U.S.A.
Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Electronics Taiwan
Corporation
Taipei Head Office
Toshiba Do Brasil S.A.
17F, Union Enterprise Plaza Bldg. 109
Min Sheng East Rd., Section 3, 0446 Taipei,
Taiwan R.O.C.
Electronic Components Div.
Tel: (3)731-6311 Fax: (3)731-6307
Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga
09850-550-Sao Bernardo do campo - SP
Tel: (011)7689-7171 Fax: (011)7689-7189
Penang Office
Tel: (02)514-9988 Fax: (02)514-7892
Suite 13-1, 13th Floor, Menard Penang Garden,
42-A, Jalan Sultan Ahmad Shah,
100 50 Penang, Malaysia
KaohsiungOffice
16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,
80027, Kaohsiung, Taiwan R.O.C.
Tel: (07)222-0826 Fax: (07)223-0046
Tel: 4-226-8523 Fax: 4-226-8515
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati,
Manila, Philippines
Tel: (02)750-5510 Fax: (02)750-5511
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the
responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for
the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of
human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used
within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind
the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor
Reliability Handbook" etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).
These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage
include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed
in this document shall be made at the customer’s own risk.
Electronic Devices Sales & Marketing Group
1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan
Tel: (03)3457-3405 Fax: (03)5444-9431
Website: http://doc.semicon.toshiba.co.jp/indexus.htm
©2000TOSHIBACORPORATION
Printed in Japan
相关型号：
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