MP4006_07 [TOSHIBA]
High Power Switching Applications; 高功率开关应用
| 型号： | MP4006_07 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Switching Applications |
| 文件： | 总7页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP4006
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
MP4006
Industrial Applications
Unit: mm
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
•
•
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: I
C (DC)
= ±2 A (max)
•
High DC current gain: h
= 2000 (min) (V = ±2 V, I = ±1 A)
CE C
FE
Absolute Maximum Ratings (Ta = 25°C)
Rating
NPN
Characteristics
Symbol
Unit
PNP
−80
−80
−8
Collector-base voltage
V
CBO
V
CEO
V
EBO
80
80
8
V
V
V
Collector-emitter voltage
Emitter-base voltage
DC
I
2
−2
C
Collector current
A
A
JEDEC
JEITA
―
―
Pulse
I
3
−3
CP
Continuous base current
I
0.5
−0.5
B
TOSHIBA
2-25A1B
Collector power dissipation
(1-device operation)
P
2.0
W
C
Weight: 2.1 g (typ.)
Collector power dissipation
(4-device operation)
P
4.0
W
T
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-10-27
MP4006
Array Configuration
10
R1 R2
6
8
7
3
9
5
2
4
R1 ≈ 4 kΩ R2 ≈ 800 Ω
R1 R2
1
Thermal Characteristics
Characteristics
Symbol
Max
31.3
Unit
Thermal resistance from junction to
ambient
ΣR
th (j-a)
°C/W
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
T
L
260
°C
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics
Symbol
Test Condition
= 80 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
I
V
V
V
―
―
―
―
10
10
4.0
―
μA
μA
mA
V
CBO
CEO
CB
CE
EB
E
= 80 V, I = 0 A
B
I
= 8 V, I = 0 A
0.8
80
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
V
V
I
I
= 1 mA, I = 0 A
―
(BR) CBO
(BR) CEO
C
C
E
= 10 mA, I = 0 A
80
―
―
V
B
h
V
= 2 V, I = 1 A
2000
―
―
―
―
FE
CE
C
Collector-emitter
Saturation voltage
V
I
I
= 1 A, I = 1 mA
―
1.5
2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= 1 A, I = 1 mA
―
―
B
Transition frequency
f
V
V
= 2 V, I = 0.5 A
―
100
20
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= 10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.4
4.0
0.6
―
―
―
Output
on
I
I
B1
B2
Input
20 μs
Switching time
μs
Storage time
Fall time
t
stg
V
= 30 V
CC
t
f
I
= −I = 1 mA, duty cycle ≤ 1%
B1
B2
2
2006-10-27
MP4006
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
= −80 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
I
V
V
V
―
―
―
―
―
―
―
―
―
―
50
30
−10
−10
−4.0
―
μA
μA
mA
V
CBO
CEO
CB
CE
EB
E
= −80 V, I = 0 A
B
I
= −8 V, I = 0 A
−0.8
−80
−80
2000
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
V
V
I
I
= −1 mA, I = 0 A
E
(BR) CBO
(BR) CEO
C
C
= −10 mA, I = 0 A
―
V
B
h
V
= −2 V, I = −1 A
―
―
FE
CE
C
Collector-emitter
Saturation voltage
V
I
I
= −1 A, I = −1 mA
−1.5
−2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= −1 A, I = −1 mA
―
B
Transition frequency
f
V
V
= −2 V, I = −0.5 A
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.4
2.0
0.4
―
―
―
on
Output
I
I
B2
B1
Input
20 μs
Switching time
μs
Storage time
Fall time
t
stg
V
= −30 V
CC
t
f
−I = I = 1 mA, duty cycle ≤ 1%
B1 B2
Marking
Part No. (or abbreviation code)
Lot No.
MP4006
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
3
2006-10-27
MP4006
(NPN transistor)
I
– V
I
– V
BE
C
CE
C
3.2
3.2
2.4
1.6
0.8
0
0.5
2
Common emitter
Common emitter
Ta = 25°C
V
= 2 V
CE
0.3
2.4
1.6
0.8
0
0.23
0.21
0.2
I
= 0.19 mA
−55
B
25
Ta = 100°C
0
4
0
2
6
8
10
0
0.8
1.6
2.4
3.2
4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE B
FE
C
10000
2.4
2.0
1.6
1.2
0.8
0.4
0
Common emitter
= 2 V
Common emitter
Ta = 25°C
5000
3000
V
CE
Ta = 100°C
2.5
−55
I
= 3 A
C
25
2.0
1000
1.5
1
500
300
0.5
0.1
100
0.03 0.05 0.1
0.3 0.5
1
3
5
10
Collector current
I
(A)
0.1
1
10
100
500
C
Base current
I
B
(mA)
V
– I
V
– I
BE (sat) C
CE (sat)
C
5
5
3
Common emitter
/I = 500
I
C B
3
Ta = −55°C
25
Ta = −55°C
100
1
1
25
100
0.5
0.3
0.5
0.3
Common emitter
/I = 500
I
C B
0.3
0.5
1
3
0.1
0.3
0.5
1
3
Collector current
I
C
(A)
Collector current
I
C
(A)
4
2006-10-27
MP4006
(PNP transistor)
I
– V
I
– V
BE
C
CE
C
−3.2
−3.2
−2.4
−1.6
−0.8
0
Common emitter
−1
−0.4
Common emitter
Ta = 25°C
V
= −2 V
CE
−2.4
−1.6
−0.8
0
−0.3
−0.25
−0.2
Ta = 100°C
25
−55
I
= −0.17 mA
B
0
0
−2
−4
−6
−8
−10
0
−0.8
−1.6
−2.4
−3.2
−4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE
FE
C
B
10000
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0
Common emitter
Common emitter
Ta = 25°C
5000
3000
V
= −2 V
CE
Ta = 100°C
25
−2.0
I
= −3 A
−2.5
C
1000
−1.5
−55
−1.0
500
300
−0.1
−0.5
100
−0.03
−0.1
−0.3 −0.5
−1
−3 −5
−10
Collector current
I
C
(A)
−0.1
−1
−10
−100
−500
Base current
I
B
(mA)
V
– I
V
– I
BE (sat) C
CE (sat)
C
−5
−3
−5
−3
Common emitter
I
/I = 500
C B
Ta = −55°C
25
Ta = −55°C
−1
−1
100
25
100
−0.5
−0.5
−0.3
Common emitter
/I = 500
I
C B
−0.3
−0.1
−0.3
−0.5
−1
−3
−0.1
−0.3
−0.5
−1
−3
Collector current
I
C
(A)
Collector current
I
C
(A)
5
2006-10-27
MP4006
r
th
– t
w
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(4)
100
(3)
(2)
(1)
30
10
-No heat sink/Attached on a circuit board-
(1) 1-device operation
3
NPN
PNP
(2) 2-device operation
(3) 3-device operation
1
Circuit board
100
(4) 4-device operation
0.5
0.001
1000
0.01
0.1
1 10
Pulse width
t
(s)
w
Safe Operating Area (NPN Tr)
P – Ta
T
5
3
8
6
4
2
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-devics operation
I
max (pulsed)*
C
100 μs*
10 ms*
1 ms*
Attached on a circuit board
1
0.5
0.3
(4)
(3)
Circuit board
(2)
(1)
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.05
0.03
V
max
CEO
1
3
5
10
30 50
100
300
0
40
80
120
160
200
Collector-emitter voltage
V
(V)
Ambient temperature Ta (°C)
CE
Safe Operating Area (NPN Tr)
ΔT – P
j T
−5
−3
160
120
80
I
max (pulsed)*
C
(1)
(2)
(3) (4)
100 μs*
10 ms*
1 ms*
−1
−0.5
−0.3
Circuit board
Attached on a circuit board
(1) 1-device operation
(2) 2-devices operation
(3) 3-devices operation
(4) 4-devices operation
40
−0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
−0.05
−0.03
V
max
CEO
0
0
−1
−3 −5
−10
−30 −50 −100
−300
1
2
3
4
5
Collector-emitter voltage
V
(V)
Total power dissipation
P
T
(W)
CE
6
2006-10-27
MP4006
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2006-10-27
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