MP4020 [TOSHIBA]

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching; 高功率开关应用锤驱动器,脉冲马达驱动器和感性负载开关
MP4020
型号: MP4020
厂家: TOSHIBA    TOSHIBA
描述:

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
高功率开关应用锤驱动器,脉冲马达驱动器和感性负载开关

驱动器 开关 脉冲
文件: 总5页 (文件大小:155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MP4020  
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type  
(Fourd Darlington Power tTransistors in One)  
MP4020  
Industrial Applications  
High Power Switching Applications  
Unit: mm  
Hammer Drive, Pulse Motor Drive and Inductive Load  
Switching  
Small package by full molding (SIP 10 pins)  
High collector power dissipation (4-device operation)  
: P = 4 W (Ta = 25°C)  
T
High collector current: I  
High DC current gain: h  
= 2 A (max)  
C (DC)  
= 2000 (min) (V  
= 2 V, I = 1 A)  
FE  
CE  
C
Zener diode included between collector and base  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
50  
V
V
V
CBO  
CEO  
EBO  
60 ± 10  
JEDEC  
JEITA  
8
2
DC  
I
C
Collector current  
A
A
TOSHIBA  
2-25A1A  
Pulse  
I
3
CP  
Continuous base current  
I
B
0.5  
Weight: 2.1 g (typ.)  
Collector power dissipation  
(1 device operation)  
P
2.0  
4.0  
W
C
Collector power dissipation  
(4 devices operation)  
P
W
T
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Array Configuration  
3
5
7
9
4
6
8
2
1
10  
R1 R2  
R1 5 kΩ  
R2 300 Ω  
1
2004-07-01  
MP4020  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
31.3  
Unit  
Thermal resistance from junction to  
ambient  
ΣR  
th (j-a)  
°C/W  
(4-devices operation, Ta = 25°C)  
Maximum lead temperature for  
soldering purposes  
T
L
260  
°C  
(3.2 mm from case for 10 s)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 45 V, I = 0 A  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
I
I
I
V
V
V
10  
10  
4.0  
70  
µA  
µA  
mA  
V
CBO  
CEO  
EBO  
CB  
CE  
EB  
E
= 45 V, I = 0 A  
B
= 8 V, I = 0 A  
0.8  
50  
C
Collector-emitter breakdown voltage  
DC current gain  
V
I
C
= 10 mA, I = 0 A  
60  
(BR) CEO  
B
h
V
CE  
= 2 V, I = 1 A  
2000  
FE  
C
Collector-emitter  
Saturation voltage  
V
I
C
I
C
= 1 A, I = 1 mA  
1.5  
2.0  
CE (sat)  
BE (sat)  
B
V
Base-emitter  
V
= 1 A, I = 1 mA  
B
Transition frequency  
f
V
CE  
V
CB  
= 2 V, I = 0.5 A  
100  
20  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0 A, f = 1 MHz  
E
Turn-on time  
t
0.4  
4.0  
0.6  
Output  
on  
I
I
B1  
B2  
Input  
20 µs  
Storage time  
Fall time  
t
stg  
Switching time  
µs  
V
= 30 V  
CC  
t
f
I
B1  
= I = 1 mA, duty cycle 1%  
B2  
Marking  
Part No. (or abbreviation code)  
Lot No.  
MP4020  
JAPAN  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2004-07-01  
MP4020  
I
– V  
I – V  
C BE  
C
CE  
Common emitter  
Ta = 25°C  
Common emitter  
= 2 V  
V
CE  
3
1
0.5  
0.3  
2.4  
1.6  
0.8  
0
2.4  
1.6  
0.8  
0
0.22  
0.20  
Ta = 100°C  
25  
55  
I
= 0.18 mA  
0
B
0
2
4
6
8
0
0.8  
1.6  
2.4  
3.2  
Collector-emitter voltage  
V
(V)  
Base-emitter voltage  
V
BE  
(V)  
CE  
h
FE  
– I  
C
V – I  
CE B  
10000  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
Common emitter  
Ta = 25°C  
5000  
3000  
Ta = 100°C  
25  
55  
2.5  
I
C
= 3.0 A  
2.0  
1000  
1.5  
1.0  
0.5  
500  
300  
0.1  
Common emitter  
V
CE  
= 2 V  
100  
0.03 0.05 0.1  
0.3 0.5  
Collector current  
1
3
5
10  
I
C
(A)  
0.1  
0.3  
1
3
10  
30  
100  
300 500  
Base current  
I
(mA)  
B
V
– I  
C
V
– I  
CE (sat)  
BE (sat) C  
10  
10  
Common emitter  
/I = 500  
Common emitter  
I /I = 500  
C
I
C
B
B
5
3
5
3
Ta = 55°C  
25  
Ta = 55°C  
100  
1
1
25  
100  
0.5  
0.3  
0.5  
0.3  
0.1  
0.3  
0.5  
1
3
5
10  
0.1  
0.3  
0.5  
1
3
5
10  
Collector current  
I
C
(A)  
Collector current  
I
(A)  
C
3
2004-07-01  
MP4020  
r
– t  
w
th  
300  
100  
Curves should be applied in thermal  
limited area. (Single nonrepetitive pulse)  
The figure shows thermal resistance per  
device versus pulse width.  
(4)  
(1)  
30  
10  
(3)  
(2)  
3
1
-No heat sink/Attached on a circuit board-  
(1) 1-device operation  
(2) 2-device operation  
(3) 3-device operation  
Circuit board  
100  
(4) 4-device operation  
0.3  
0.001  
0.01  
0.1  
1
10  
1000  
Pulse width  
t
w
(s)  
Safe Operating Area  
P
T
Ta  
8
6
4
2
0
20  
10  
(1) 1-device operation  
(2) 2-device operation  
(3) 3-device operation  
(4) 4-device operation  
Attached on a circuit board  
5
3
I
C
max (pulsed)*  
(4)  
(3)  
100 µs*  
Circuit board  
10 ms*  
1 ms*  
1
(2)  
(1)  
0.5  
0.3  
0
40  
80  
120  
160  
200  
0.1  
Ambient temperature Ta (°C)  
*: Single nonrepetitive pulse  
Ta = 25°C  
0.05  
0.03  
Curves must be derated linearly  
with increase in temperature.  
V
max  
CEO  
30  
(V)  
0.5  
1
3
5
10  
50  
100  
Collector-emitter voltage  
V
CE  
T – P  
j
T
160  
120  
80  
(1)  
(2)  
(3) (4)  
Circuit board  
Attached on a circuit board  
(1) 1-device operation  
(2) 2-device operation  
(3) 3-device operation  
(4) 4-device operation  
40  
0
0
1
2
3
4
5
Total power dissipation  
P
T
(W)  
4
2004-07-01  
MP4020  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
5
2004-07-01  

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