MP4305 [TOSHIBA]
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1); 东芝大功率晶体管模块PNP硅外延型（ 1达林顿功率晶体管4 ）
| 型号： | MP4305 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP4305
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4305
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
·
·
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P = 4.4 W (Ta = 25°C)
T
·
·
·
High collector current: I
High DC current gain: h
= −5 A (max)
C (DC)
= 2000 (min) (V
= −5 V, I = −3 A)
FE
CE
C
Diode included for absorbing fly-back voltage.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
−100
−100
−6
V
V
V
CBO
CEO
EBO
JEDEC
JEITA
―
―
DC
Collector current
Pulse
I
−5
C
A
A
TOSHIBA
2-32C1E
I
−8
CP
Continuous base current
Collector power dissipation
(1 device operation)
I
−0.5
B
Weight: 3.9 g (typ.)
P
2.2
4.4
W
C
Collector power dissipation
(4 devices operation)
P
W
T
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
−55 to 150
stg
Array Configuration
R1 R2
6
7
5
8
12
1
2
3
4
9
10
11
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω
1
2002-11-20
MP4305
Thermal Characteristics
Characteristics
Symbol
Max
28.4
Unit
Thermal resistance of junction to
ambient
ΣR
°C/W
th (j-a)
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
T
260
°C
L
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −100 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
V
―
―
―
―
―
―
―
―
―
―
―
40
55
−10
−10
−2.0
―
µA
µA
mA
V
CBO
CEO
CB
CE
EB
E
Collector cut-off current
= −100 V, I = 0 A
B
Emitter cut-off current
I
= −6 V, I = 0 A
−0.6
−100
−100
2000
1000
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
V
I
I
= −1 mA, I = 0 A
E
(BR) CBO
(BR) CEO
C
C
= −10 mA, I = 0 A
―
V
B
h
h
V
V
= −5 V, I = −3 A
15000
―
FE (1)
CE
CE
C
DC current gain
―
= −5 V, I = −5 A
FE (2)
C
Collector-emitter
Saturation voltage
V
I
I
= −3 A, I = −6 mA
−1.5
−2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= −3 A, I = −6 mA
―
B
Transition frequency
f
V
V
= −2 V, I = −0.5 A
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.3
2.0
0.4
―
―
―
on
Output
I
I
B2
B1
Input
20 µs
Switching time
µs
Storage time
Fall time
t
stg
V
= −30 V
CC
t
f
−I = I = 6 mA, duty cycle ≤ 1%
B1
B2
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Maximum forward current
Surge current
I
―
―
―
―
―
―
―
―
―
1.0
8
3
6
A
A
FM
I
t = 1 s, 1 shot
FSM
Forward voltage
V
I
= 1 A, I = 0 A
2.0
―
―
V
F
F
B
Reverse recovery time
Reverse recovery charge
t
µs
µC
rr
I
= 3 A, V = 3 V, dI /dt = −50 A/µs
F
BE
F
Q
rr
2
2002-11-20
MP4305
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Maximum forward current
Reverse current
I
―
―
―
―
―
―
―
3
A
µA
V
FM
I
V
= 110 V
R
0.4
―
R
Reverse voltage
V
I
I
= 100 µA
= 1 A
100
―
R
R
F
Forward voltage
V
1.5
V
F
3
2002-11-20
MP4305
I
– V
I – V
C BE
C
CE
−8
−6
−4
−2
0
−8
−6
−4
−2
0
−10
−3
Common emitter
= −5 V
Common emitter
Ta = 25°C
−1.5
V
CE
−1.0
−0.7
−0.5
−0.3
I
= −0.2 mA
B
Ta = 100°C
−55
25
−1.6
0
−2
−4
−6
−8
(V)
−10
0
−0.8
−2.4
−3.2
(V)
−4.0
Collector-emitter voltage
V
Base-emitter voltage V
BE
CE
h
– I
V
– I
CE B
FE
C
30000
10000
Common emitter
= −5 V
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
Common emitter
Ta = 25°C
V
CE
I
= −8 A
C
5000
3000
Ta = 100°C
25
−7
−6
−55
−5
−4
1000
500
−3
−2
−1
−0.5
200
−0.1
−0.05 −0.1
−0.3
−1
−3
(A)
−10 −20
−0.1
−1
−10
−100
(mA)
−1000
Collector current
I
C
Base current
I
B
V
– I
V
– I
BE (sat) C
CE (sat)
C
−10
−10
Common emitter
/I = 500
Common emitter
I /I = 500
C B
I
C B
−5
−3
−5
−3
Ta = −55°C
25
Ta = −55°C
−1
−1
100
25
100
−0.5
−0.3
−0.5
−0.3
−0.1
−0.3
−1
−3
−10
−0.1
−0.3
−1
−3
−10
Collector current
I
C
(A)
Collector current
I
C
(A)
4
2002-11-20
MP4305
r
th
– t
w
300
100
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
(4)
30
10
(1)
(3)
(2)
3
1
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
100
0.3
0.001
0.01
0.1
1
10
1000
Pulse width
t
(s)
w
Safe Operating Area
P – Ta
T
−20
−10
10
8
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
I
max (pulsed)*
C
−5
−3
10 ms*
100 µs*
1 ms*
6
(4)
Circuit board
−1
4
(3)
(2)
−0.5
−0.3
2
(1)
0
−0.1
0
40
80
120
160
200
Ambient temperature Ta (°C)
−0.05
−0.03
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
CEO
−30
Collector-emitter voltage
−0.01
−1
−3
−10
−100
(V)
−300
V
CE
∆T – P
j
T
200
160
120
80
Circuit board
(3) (4)
(2)
(1)
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
40
0
0
1
2
3
4
5
Total power dissipation
P
(W)
T
5
2002-11-20
MP4305
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-11-20
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