MSG180L41 [TOSHIBA]

Silicon Controlled Rectifier, 140 A, 800 V, SCR;
MSG180L41
型号: MSG180L41
厂家: TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述:

Silicon Controlled Rectifier, 140 A, 800 V, SCR

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MSG180Q41

Silicon Controlled Rectifier, 140 A, 1200 V, SCR

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0 TOSHIBA

MSG180Q43

Silicon Controlled Rectifier, 140 A, 1200 V, SCR

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0 TOSHIBA

MSG180U43

Silicon Controlled Rectifier, 140 A, 1600 V, SCR

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0 TOSHIBA

MSG33001

SiGe HBT type For low-noise RF amplifier

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91 PANASONIC

MSG33002

SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER

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17 PANASONIC

MSG33002

SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER

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10 PANASONIC

MSG33003

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 0.80 X 1.20 MM, 0.52 MM HEIGHT, SSSMINI3-F1, 3 PIN

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0 PANASONIC

MSG33004

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SMALL, SSSMINI3-F1, 3 PIN

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0 PANASONIC

MSG330C4

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 0.80 X 1.20 MM, 0.52 MM HEIGHT, ROHS COMPLIANT, ULTRA MINIATURE, SSSMINI3-F1, 3 PIN

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0 PANASONIC

MSG36A51

RF Small Signal Bipolar Transistor, 2-Element, L Band, Silicon Germanium, NPN, SSSMINI6-F1, 6 PIN

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0 PANASONIC

MSG36C42

RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, L Band, Silicon Germanium, NPN, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

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0 PANASONIC

MSG36D42

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

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0 PANASONIC

MSG36E31

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

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0 PANASONIC

MSG36E41

SiGe HBT type

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37 PANASONIC

MSG43001

SiGe HBT type For low-noise RF amplifier

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23 PANASONIC