MT4S300T [TOSHIBA]
Bipolar Small-Signal Transistors;
| 型号： | MT4S300T |
| 厂家： | 
TOSHIBA |
| 描述： | Bipolar Small-Signal Transistors |
| 文件： | 总73页 (文件大小：1582K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR GENERAL CATALOG
Transistors
Bipolar Small-Signal Transistors
Junction FETs
Combination Products of Different Type Devices
MOSFETs
Bipolar Power Transistors
Radio-Frequency Bipolar Small-Signal Transistors
Radio-Frequency Small-Signal FETs
Radio-Frequency Power MOSFETs
IGBTs
Phototransistors (for Optical Sensors)
1
2010/9ꢀSCE0004K
Bipolar Small-Signal Transistors
General-Purpose Transistors (Leaded Type)
Package
TO-92 (SC-43)
5.1 MAX
VCEO (V)
Max
IC (A)
Max
VCE(sat) (V)
Max
Classification
hFE
(mm)
NPN
2SC1815
PNP
2SA1015
50
−50
120
−120
50
0.15
−0.15
0.1
70 to 700
70 to 400
200 to 700
200 to 700
70 to 700
70 to 400
0.25
−0.3
0.3
General-purpose
2SC2240
−0.1
0.15
−0.15
−0.3
0.25
−0.3
2SA970
2SC1815(L)
−50
2SA1015(L)
Low noise
50
0.15
200 to 700
0.3
2SC732TM
2SC1959
⎯
30
−30
80
0.5
−0.5
0.3
−0.3
0.8
−0.8
2
70 to 400
70 to 240
70 to 240
70 to 240
100 to 320
100 to 320
120 to 700
120 to 400
140 to 600
140 to 600
0.25
−0.25
0.5
2SA562TM
2SA817
2SC1627
2SC2120
2SC3266
2SC3279
Audio drivers
−80
30
−0.4
0.5
−30
20
−0.7
0.5
2SA950
−20
10
−2
−0.5
0.5
2SA1296
2
−10
−2
−0.5
2SA1300
10
10
10
80
40
20
5
5
700 to 2000
450 to 700
450 to 700
100 to 200
10000 min
200 to 1200
0.25
0.27
0.3
2SC5853
2SC5854
⎯
⎯
High current
⎯
⎯
⎯
⎯
⎯
5
1.2
0.3
0.3
0.09
1.3
2SC6132
2SC982TM
Darlington
Muting
0.1
2SC2878
2SC2551
300
−300
250
0.1
−0.1
0.05
−0.05
30 to 150
30 to 150
50 min
0.5
−0.5
1.5
2SA1091
High breakdown voltage
2SC3333
−250
50 min
−1.5
2SA1320
High-speed switching
High hFE
15
50
0.2
40 to 240
0.3
2SC752(G)TM
⎯
0.15
600 to 3600
0.25
2SC3112
⎯
•
•
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
2
2010/9ꢀSCE0004K
General-Purpose Transistors (Single)
(Surface-Mount Type)
ESM
CST3
fSM
VESM
SSM
0.6
0.6
1.2
1.6
1.6
VCEO
IC
Classification (V) (mA)
Max Max
(mm)
PNP
(mm)
PNP
2SA2154
(mm)
(mm)
(mm)
PNP
NPN
NPN
NPN
PNP
NPN
PNP
NPN
100 2SC6026CT 2SA2154CT 2SC6026
50
2SC6026MFV
2SA2154MFV
2SC4738F
2SA1832F
2SC4738 2SA1832
150
General-purpose
Low noise
30
50
500
500
120
100
12
12
15
25
30
10
20
20
20
30
50
50
50
400 2SC5376CT 2SA1955CT
500
2SC5376FV
2SA1955FV
2SC5376F
2SA1955F
2SC5376 2SA1955
800
800
800
2000
2000
1500
2500
3000
1000
1700
2500
High current
5000
Strobe
10
(3000)
High breakdown
voltage
80
300
High hFE
50
20
150
300
Muting
High-speed
switching
15
200
50
High-voltage
switching
200
High breakdown 250
50
voltage
300
40
100
300
Darlington
•
•
•
For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
3
2010/9ꢀSCE0004K
Leaded Type
USM
UFM
TSM
S-MINI
TO-92
5.1 MAX
2.9
2.9
2.0
2.0
(mm)
(mm)
(mm)
(mm)
(mm)
NPN
PNP
2SA1586
NPN
PNP
NPN
PNP
NPN
PNP
NPN
2SC1815
PNP
2SA1015
2SC4116
2SC2712
2SA1162
TTC4116FU * TTA1586FU *
2SC4118
2SC4117
2SA1588
2SA1587
2SC2859
2SC3325
2SC2713
2SC3324
2SA1182
2SA1313
2SA1163
2SA1312
2SC1959
2SC2240
2SA562TM
2SA970
2SC5233
2SA1954
2SC5232
2SA1953
2SA1362
2SA1298
2SA1621
2SC3265
2SC4210
2SC2120
2SC3279
2SC3266
2SA950
2SA1300
2SA1296
2SC6133 *
2SA2214 *
2SA2215 *
2SC6134 *
2SC6135 *
2SA2195 *
2SC6100 *
(2SC5766)
2SC5853
2SC5471
2SC5854
2SC6067
2SC4209
2SA1620
2SC1627
2SA817
2SC4666
2SC4213
2SC3295
2SC3326
2SC3112
2SC2878
2SC4667
2SC3437
2SC3138
2SC752(G)TM
2SA1255
2SA1721
2SC3333
2SC2551
2SC982TM
2SA1320
2SA1091
2SC4497
2SC2532
*: New product
4
2010/9ꢀSCE0004K
General-Purpose Transistors (Dual)
DualType
CST6
fS6
ESV
USV
SMV
2.9
2.0
1.0
1.0
1.6
VCEO
IC
Classification (V) (mA)
Max Max
(mm)
NPN + PNP
(mm)
NPN + PNP
(mm)
PNP + NPN
(mm)
(mm)
PNP + NPN
NPN
PNP
NPN
PNP
NPN
PNP
(HN2B26CT) (HN1C26FS) (HN1A26FS)
2SA1873
150
50
(▲18) **
(▲10)
(▲7) (HN1B26FS) HN4B01JE 2SC4944
(▲1) 2SC4207
2SA1618
(100)
(HN2C26FS) (HN2A26FS)
(▲9)
(▲6)
(▲2) HN4A56JU
(▲2)
(▲1)
General
-purpose
(▲12)
(▲11)
(▲4)
HN4B04J
30
50
500
500
(▲3) *
HN4C06J
HN4A06J
HN4A51J
(▲2)
(▲1) HN4B06J
Low noise
120
100
HN4C51J
(▲3)
(▲5)
(▲4)
HN4C05JU
12
12
15
400
500
800
(▲2)
High current
HN4C08J
HN4A08J
25
800
(▲2)
(▲1)
30
10
20
800
2000
2000
Strobe
10
5000
High breakdown
voltage
80
50
20
300
150
300
High hFE
Muting
High-speed
switching
15
200
50
High-voltage
switching
200
High breakdown 250
50
voltage
300
40
100
300
Darlington
•
•
•
•
For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
Number of Pins
▲1
▲2
▲3
▲4
▲5
▲11
▲17
▲6
▲12
▲18
Q1
Q2
Q2
Q2
Q1
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q2
Q1
Q1
Q1
Q2
Q1
Q2
Q2
Q2
5
▲7
▲8
▲9
▲10
▲16
♦
6
6
Q2
Q1
Q1
Q2
Q1
Q1
Q1
Q1
Q2
Q1
▲13
▲14
▲15
Q2
Q1
Q2
Q2
The internal connection diagrams only show the general configurations of the circuits.
5
2010/9ꢀSCE0004K
ES6
US6
SM6
2.9
1.6
2.0
(mm)
(mm)
(mm)
NPN
PNP
PNP + NPN
NPN
PNP
PNP + NPN
HN1B01FU
(▲8)
NPN
PNP
PNP + NPN
HN1C01FE
(▲10) HN1A01FE
HN2C01FE
(▲12) HN2A01FE
HN3C67FE
HN1C01FU
(▲10) HN1A01FU
(▲7) HN1B04FE HN2C01FU
(▲12) HN2A01FU
HN1A01F HN1B01F
(▲7) HN1B04FU HN1C01F
(▲7)
(▲8)
(▲9)
(▲9)
(▲11) HN3B02FU
(▲14)
(▲10) HN3A56F
HN3B01F
(▲11)
HN3C56FU
(▲16)
(▲13)
(▲17)
(▲15)
HN1B04F
(▲8)
HN1C07F HN1A07F
(▲10)
(▲7)
HN3C51F HN3A51F
(▲15)
(▲16)
HN1C05FE
(▲10)
HN1A02F
(▲7)
HN1C03FU
(▲10)
HN1C03F
(▲10)
HN3C61FU
(▲15)
*: New product
**: Under development
6
2010/9ꢀSCE0004K
Bias Resistor Built-in Transistors (Single, General-Purpose)
VCEO(V)
20
50
IC(mA)
50
100
fSM
CST3
CST6
CST3
VESM
0.6
0.6
1.0
0.6
1.2
Internal
Resistors
(kΩ)
(mm)
PNP
(mm)
PNP
(mm)
PNP
(mm)
(mm)
PNP
R1
4.7
10
R2
NPN
NPN
NPN
PNP
NPN + PNP
NPN
NPN
4.7 RN1101FS RN2101FS RN1101CT RN2101CT RN1961CT RN2961CT
10 RN1102FS RN2102FS RN1102CT RN2102CT RN1962CT RN2962CT
22 RN1103FS RN2103FS RN1103CT RN2103CT RN1963CT RN2963CT
47 RN1104FS RN2104FS RN1104CT RN2104CT RN1964CT RN2964CT
47 RN1105FS RN2105FS RN1105CT RN2105CT RN1965CT RN2965CT
RN1101ACT RN2101ACT RN1101MFV RN2101MFV
RN1102ACT RN2102ACT RN1102MFV RN2102MFV
RN1103ACT RN2103ACT RN1103MFV RN2103MFV
RN1104ACT RN2104ACT RN1104MFV RN2104MFV
RN1105ACT RN2105ACT RN1105MFV RN2105MFV
22
47
2.2
4.7
10
47 RN1106FS RN2106FS RN1106CT RN2106CT RN1966CT RN2966CT RN49P2ACT RN1106ACT RN2106ACT RN1106MFV RN2106MFV
47 RN1107FS RN2107FS RN1107CT RN2107CT RN1967CT RN2967CT
47 RN1108FS RN2108FS RN1108CT RN2108CT RN1968CT RN2968CT
22 RN1109FS RN2109FS RN1109CT RN2109CT RN1969CT RN2969CT
RN1107ACT RN2107ACT RN1107MFV RN2107MFV
RN1108ACT RN2108ACT RN1108MFV RN2108MFV
RN1109ACT RN2109ACT RN1109MFV RN2109MFV
RN1110ACT RN2110ACT RN1110MFV RN2110MFV
RN1111ACT RN2111ACT RN1111MFV RN2111MFV
RN1112ACT RN2112ACT RN1112MFV RN2112MFV
RN1113ACT RN2113ACT RN1113MFV RN2113MFV
RN1114MFV RN2114MFV
22
47
4.7
10
∞
∞
RN1110FS RN2110FS RN1110CT RN2110CT RN1970CT RN2970CT
RN1111FS RN2111FS RN1111CT RN2111CT RN1971CT RN2971CT
RN1112FS RN2112FS RN1112CT RN2112CT RN1972CT RN2972CT
RN1113FS RN2113FS RN1113CT RN2113CT RN1973CT RN2973CT
22
∞
47
∞
1
10
10
10
4.7
10
⎯
100
∞
2.2
4.7
10
RN1115MFV RN2115MFV
RN1116MFV RN2116MFV
RN1117MFV RN2117MFV
RN1118MFV RN2118MFV
RN1119MFV RN2119MFV
RN1130MFV RN2130MFV
RN1131MFV RN2131MFV
RN1132MFV RN2132MFV
47
1
100
100
200
∞
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Single, High-Current/Muting Switch)
High Current
Muting
20
VCEO(V)
IC(mA)
12
50
500
800
300
USM
S-MINI
S-MINI
2.9
2.9
2.0
Internal
Resistors
(kΩ)
(mm)
(mm)
(mm)
R1
1
R2
1
NPN
PNP
NPN
PNP
NPN
RN1321A
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
RN2421
2.2
4.7
10
2.2 RN1322A
4.7 RN1323A
10 RN1324A
10 RN1325A
10 RN1326A
10 RN1327A
∞
∞
∞
∞
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
0.47
1
2.2
5.6
10
RN1441
RN1442
RN1443
RN1444
22
2.2
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
7
2010/9ꢀSCE0004K
50
100
ESM
SSM
USM
S-MINI
TO-92
5.1 MAX
2.9
2.0
1.6
1.6
(mm)
PNP
(mm)
PNP
(mm)
PNP
(mm)
PNP
(mm)
PNP
NPN
NPN
NPN
NPN
NPN
RN1101F RN2101F RN1101
RN1102F RN2102F RN1102
RN1103F RN2103F RN1103
RN1104F RN2104F RN1104
RN1105F RN2105F RN1105
RN1106F RN2106F RN1106
RN1107F RN2107F RN1107
RN1108F RN2108F RN1108
RN1109F RN2109F RN1109
RN1110F RN2110F RN1110
RN1111F RN2111F RN1111
RN1112F RN2112F RN1112
RN1113F RN2113F RN1113
RN1114F RN2114F RN1114
RN1115F RN2115F RN1115
RN1116F RN2116F RN1116
RN1117F RN2117F RN1117
RN1118F RN2118F RN1118
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2107
RN2108
RN2109
RN2110
RN2111
RN2112
RN2113
RN2114
RN2115
RN2116
RN2117
RN2118
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1307
RN1308
RN1309
RN1310
RN1311
RN1312
RN1313
RN1314
RN1315
RN1316
RN1317
RN1318
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2307
RN2308
RN2309
RN2310
RN2311
RN2312
RN2313
RN2314
RN2315
RN2316
RN2317
RN2318
RN1401 RN2401 RN1001
RN1402 RN2402 RN1002
RN1403 RN2403 RN1003
RN1404 RN2404 RN1004
RN1405 RN2405 RN1005
RN1406 RN2406 RN1006
RN1407 RN2407 RN1007
RN1408 RN2408 RN1008
RN1409 RN2409 RN1009
RN1410 RN2410 RN1010
RN1411 RN2411 RN1011
RN1412 RN2412
RN1413 RN2413
RN1414 RN2414
RN1415 RN2415
RN1416 RN2416
RN1417 RN2417
RN1418 RN2418
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN2007
RN2008
RN2009
RN2010
RN2011
RN1130F RN2130F
RN1131F RN2131F
RN1132F RN2132F
8
2010/9ꢀSCE0004K
Bias Resistor Built-in Transistors (Dual, General-Purpose (5 Pin) )
Absolute
Maximum
Ratings
Internal Resistors
Q1 Q2
ESV
USV
1.6
2.0
VCEO
IC
(mm)
NPN + PNP
(mm)
NPN + PNP
Classification
NPN x 2
PNP x 2
NPN x 2
PNP x 2
R1
R1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q2
R2
R2
Q1
Q1
R1
R1
R2
R1
R2
R1
R2
R1
R2
R1
R2
R2
R1
R2
R1
R2
R1
R2
R1
R2
(kΩ)
(kΩ)
R1
R2
R1
R2
Collector-base
connection
Collector-base
connection
Common emitter
Common emitter
Common emitter
Common emitter
(V)
(mA)
4.7
10
22
47
2.2
4.7
10
22
47
4.7
10
22
47
1
4.7
10
22
47
47
47
47
47
22
⎯
⎯
⎯
⎯
10
10
10
4.7
10
47
47
100
10
4.7
10
22
47
2.2
4.7
10
22
47
4.7
10
22
47
1
4.7 RN1701JE
RN2701JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN2706JE
RN2707JE
RN2708JE
RN2709JE
RN2710JE
RN2711JE
RN2712JE
RN2713JE
RN1701
RN1702
RN1703
RN1704
RN1705
RN1706
RN1707
RN1708
RN1709
RN1710
RN1711
RN2701
RN2702
RN2703
RN2704
RN2705
RN2706
RN2707
RN2708
RN2709
RN2710
RN2711
10
22
47
47
47
47
47
22
⎯
⎯
⎯
⎯
10
10
10
4.7
10
47
10
100
10
RN1702JE
RN1703JE
RN1704JE
RN1705JE
RN1706JE
RN1707JE
RN1708JE
RN1709JE
RN1710JE
RN1711JE
RN47A3JE
RN47A2JE
RN47A3
RN47A2
RN47A1JE
RN47A1
50
100
RN2714
General-purpose
2.2
4.7
10
47
47
47
100
10
2.2
4.7
10
47
10
4.7
100
47
RN47A4JE
RN47A5JE
RN47A4
RN47A5
RN47A6
RN47A7
Q1: 50 Q1: 100
10
10
4.7
10
RN47A7JE
RN47A8JE
Q2: 100
Q2: 12
(Lowsat)
Q1: 50 Q1: 100
10
10
10
47
Q2: 100
Q2: 30
(High hFE)
Muting
20
300
2.2
⎯
2.2
⎯
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
9
2010/9ꢀSCE0004K
SMV
2.9
(mm)
NPN + PNP
NPN x 2
PNP x 2
R1
Q1
Q2
Q1
Q2
Q2
R2
Q1
R1
R2
R1
R2
R1
R2
R1
R2
R1
R2
Collector-base
connection
Common emitter
Common emitter
RN1501
RN1502
RN1503
RN1504
RN1505
RN1506
RN1507
RN1508
RN1509
RN1510
RN1511
RN2501
RN2502
RN2503
RN2504
RN2505
RN2506
RN2507
RN2508
RN2509
RN2510
RN2511
RN1544
The internal connection diagrams only show the general configurations of the circuits.
10
2010/9ꢀSCE0004K
(Dual, General-Purpose (6 Pin) )
fS6
1.0
Classification
Absolute
Maximum
Ratings
Absolute
Maximum
Ratings
Internal Resistors
Q1 Q2
NPN
PNP
PNP + NPN
Internal Resistors
Q1 Q2
NPN x 2
PNP x 2
VCEO
IC
VCEO
IC
R1
R1
R2
R1
R2
R1
R1
R2
Q1
Q2
Q1
Q2
Q1
Q1
Q1
Q2
Q2
Q2
(kΩ)
(kΩ)
(kΩ)
(kΩ)
R2
R2
R2
R2
R1
R1
R2
R2
R2
R1
R1
R1
R1 R2 R1 R2
R1 R2 R1 R2
(V) (mA)
(V) (mA)
4.7 4.7 4.7 4.7 RN1901AFS
10 10 10 10 RN1902AFS
22 22 22 22 RN1903AFS
47 47 47 47 RN1904AFS
2.2 47 2.2 47 RN1905AFS
4.7 47 4.7 47 RN1906AFS
10 47 10 47 RN1907AFS
22 47 22 47 RN1908AFS
47 22 47 22 RN1909AFS
RN2901AFS
RN2902AFS
RN2903AFS
RN2904AFS
RN2905AFS
RN2906AFS
RN2907AFS
RN2908AFS
RN2909AFS
RN2910AFS
RN2911AFS
RN2912AFS
RN2913AFS
RN4981AFS
RN4982AFS
RN4983AFS
RN4984AFS
RN4985AFS
RN4986AFS
RN4987AFS
RN4988AFS
RN4989AFS
RN4990AFS
RN4991AFS
RN4992AFS
RN4993AFS
4.7 4.7 4.7 4.7 RN1961FS
10 10 10 10 RN1962FS
22 22 22 22 RN1963FS
47 47 47 47 RN1964FS
2.2 47 2.2 47 RN1965FS
4.7 47 4.7 47 RN1966FS
10 47 10 47 RN1967FS
22 47 22 47 RN1968FS
47 22 47 22 RN1969FS
RN2961FS
RN2962FS
RN2963FS
RN2964FS
RN2965FS
RN2966FS
RN2967FS
RN2968FS
RN2969FS
RN2970FS
RN2971FS
RN2972FS
RN2973FS
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
RN1910AFS
RN1911AFS
RN1912AFS
RN1913AFS
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
RN1970FS
RN1971FS
RN1972FS
RN1973FS
General
-purpose
50
80
20
50
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47
10 47
10
47
47
10
⎯
47 10
2.2 47
2.2 47
22 22
10 10
47 10
22 47
47 47
10 10
2.2 47 22
2.2 47 47
22
10
47
4.7
10
22
22 10
10 10
10
⎯
47 4.7 47
47 47 4.7 47
⎯
⎯
⎯
4.7
10
22
⎯
⎯
⎯
4.7
10
22
⎯
⎯
⎯
4.7
10
22
⎯
⎯
⎯
General
-purpose
(Hiβ)
40
40
100
100
100
100
(−30)
(−30)
50
50
Power SW
10
47 2.0 10
10 47 2.0 10
(−12) (−500)
(−12) (−500)
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
11
2010/9ꢀSCE0004K
(mm)
Absolute
Maximum
Ratings
NPN x 2
PNP x 2
NPN + PNP
NPN + PNP
NPN + PNP
NPN + PNP
Internal Resistors
Q1
NPN + PNP
VCEO
IC
Q2
R1
R2
R1
R2
R1
R1
R2
R1
Q1
Q2
Q1
Q1
Q1
Q2
Q2
Q2
Q2
Q1
Q1
Q1
Q2
Q2
(kΩ)
(kΩ)
R1
R2
R2
R2
R2
R1
R2
R2
R2
R2
R2
R1
R1
R1
R1
R1
R2
R1
R2
R1
R1 R2 R1 R2
(V) (mA)
RN1901FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN1906FS
RN1907FS
RN1908FS
RN1909FS
RN1910FS
RN1911FS
RN1912FS
RN1913FS
RN2901FS
RN2902FS
RN2903FS
RN2904FS
RN2905FS
RN2906FS
RN2907FS
RN2908FS
RN2909FS
RN2910FS
RN2911FS
RN2912FS
RN2913FS
RN4981FS
RN4982FS
RN4983FS
RN4984FS
RN4985FS
RN4986FS
RN4987FS
RN4988FS
RN4989FS
RN4990FS
RN4991FS
RN4992FS
RN4993FS
4.7 4.7 4.7 4.7
10 10
22 22
10 10
22 22
RN49J2FS
RN49J7FS
47 47 47 47 RN49J2AFS
2.2 47 2.2 47
4.7 47 4.7 47
10 47
22 47
47 22
10 47
22 47
47 22
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
50
50
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47 10
2.2 47
2.2 47
22 22
10 10
47 10
22 47
47 47
10 10
RN49P1FS
10
⎯
RN49A6FS
47 47 4.7 47
4.7
10
22
⎯
⎯
⎯
4.7
10
22
⎯
⎯
⎯
40
100
100
(−30)
50
10 47 2.0 10
(−12) (−500)
The internal connection diagrams only show the general configurations of the circuits.
12
2010/9ꢀSCE0004K
(Dual, General-Purpose (6 Pin) ) (Continued)
Absolute
Maximum
Ratings
Internal Resistors
Q1 Q2
ES6
VCEO
IC
1.6
Classification
(mm)
NPN + PNP
NPN x 2
PNP x 2
NPN x 2
PNP x 2
PNP + NPN
NPN + PNP
R1
R2
R1
R2
R1
R1
R1
R2
R1
R2
R1
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q2
Q1
Q1
Q1
Q1
Q2
Q2
(kΩ)
(kΩ)
R1
R1
R2
R2
R2
R2
R2
R2
R2
R2
R1
R1
R1
R2
R1
R2
R1
R1 R2 R1 R2
(V) (mA)
4.7 4.7 4.7 4.7 RN1901FE
10 10 10 10 RN1902FE
22 22 22 22 RN1903FE
47 47 47 47 RN1904FE
2.2 47 2.2 47 RN1905FE
4.7 47 4.7 47 RN1906FE
10 47 10 47 RN1907FE
22 47 22 47 RN1908FE
47 22 47 22 RN1909FE
RN2901FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
RN2907FE
RN2908FE
RN2909FE
RN2910FE
RN2911FE
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
RN1967FE
RN1968FE
RN1969FE
RN1970FE
RN1971FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
RN2967FE
RN2968FE
RN2969FE
RN2970FE
RN2971FE
RN4901FE
RN4902FE
RN4903FE
RN4904FE
RN4905FE
RN4906FE
RN4907FE
RN4908FE
RN4909FE
RN4910FE
RN4911FE
RN4981FE
RN4982FE
RN4983FE
RN4984FE
RN4985FE
RN4986FE
RN4987FE
RN4988FE
RN4989FE
RN4990FE
RN4991FE
RN4962FE
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
RN1910FE
RN1911FE
General
-purpose
50
100
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47
10 47
10
47
47
10
⎯
⎯
⎯
⎯
2.2 47 22
2.2 47 47
RN49A1FE
22
10
4.7
10
22
22 10
10 10
⎯
⎯
⎯
4.7
10
22
RN1970HFE
RN1971HFE
RN1972HFE
RN2970HFE
RN2971HFE
RN2972HFE
RN4990HFE
RN4991HFE
RN4992HFE
General
-purpose
(Hiβ)
40
100
100
(−30)
50
Power SW
10
47 2.0 10
(−12) (−500)
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The internal connection diagrams only show the general configurations of the circuits.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
13
2010/9ꢀSCE0004K
Absolute
Maximum
Ratings
Internal Resistors
Q1 Q2
US6
VCEO
IC
2.0
Classification
(mm)
NPN + PNP
NPN x 2
PNP x 2
NPN x 2
PNP x 2
PNP + NPN
R1
R2
R1
R2
R1
R1
R2
R1
R2
Q1
Q2
Q1
Q2
R1
R2
Q2
Q2
Q1
Q1
Q1
Q1
Q2
Q2
(kΩ)
(kΩ)
R1
R1
R2
R2
R2
R2
R2
R1
R1
R2
R1
R2
R1
R1 R2 R1 R2
(V) (mA)
4.7 4.7 4.7 4.7 RN1901
10 10 10 10 RN1902
22 22 22 22 RN1903
47 47 47 47 RN1904
2.2 47 2.2 47 RN1905
4.7 47 4.7 47 RN1906
10 47 10 47 RN1907
22 47 22 47 RN1908
47 22 47 22 RN1909
RN2901
RN2902
RN2903
RN2904
RN2905
RN2906
RN2907
RN2908
RN2909
RN2910
RN2911
RN1961
RN1962
RN1963
RN1964
RN1965
RN1966
RN1967
RN1968
RN1969
RN1970
RN1971
RN2961
RN2962
RN2963
RN2964
RN2965
RN2966
RN2967
RN2968
RN2969
RN2970
RN2971
RN4901
RN4981
RN4982
RN4983
RN4984
RN4985
RN4986
RN4987
RN4988
RN4989
RN4990
RN4991
RN4902
RN4903
RN4904
RN4905
RN4906
RN4907
RN4908
RN4909
RN4910
RN4911
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
RN1910
RN1911
General
-purpose
50
100
RN1973
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
RN2975
47
10 47
10
47
47
10
⎯
⎯
⎯
⎯
2.2 47 22
2.2 47 47
RN49A1
RN49A2
22
10
4.7
10
22
22 10
10 10
⎯
⎯
⎯
4.7
10
22
General
-purpose
(Hiβ)
40
100
100
(−30)
50
Power SW
10
47 2.0 10
RN49A5
(−12) (−500)
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• The products shown in bold are also manufactured in offshore fabs.
The internal connection diagrams only show the general configurations of the circuits.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
14
2010/9ꢀSCE0004K
(Dual, General-Purpose (6 Pin) ) (Continued)
Absolute
Maximum
Ratings
Internal Resistors
Q1 Q2
SM6
VCEO
IC
2.9
Classification
(mm)
PNP + NPN
NPN x 2
PNP x 2
NPN x 2
R1
R2
R1
R2
R1
R2
Q1
Q2
R1
R2
Q2
Q1
Q1
Q1
Q2
Q2
(kΩ)
(kΩ)
R1
R2
R2
R1
R2
R1
R2
R1
R1 R2 R1 R2
(V) (mA)
4.7 4.7 4.7 4.7 RN1601
10 10 10 10 RN1602
22 22 22 22 RN1603
47 47 47 47 RN1604
2.2 47 2.2 47 RN1605
4.7 47 4.7 47 RN1606
10 47 10 47 RN1607
22 47 22 47 RN1608
47 22 47 22 RN1609
RN2601
RN2602
RN2603
RN2604
RN2605
RN2606
RN2607
RN2608
RN2609
RN2610
RN2611
RN4601
RN4602
RN4603
RN4604
RN4605
RN4606
RN4607
RN4608
RN4609
RN4610
RN4611
RN4612
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
4.7
10
22
47
1
⎯
⎯
⎯
⎯
10
RN1610
RN1611
General
-purpose
50
100
RN1673
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47
10 47
10
47
47
10
⎯
⎯
⎯
⎯
2.2 47 22
2.2 47 47
22
10
4.7
10
22
22 10
10 10
RN46A1
⎯
⎯
⎯
4.7
10
22
General
-purpose
(Hiβ)
40
100
100
(−30)
50
Power SW
10
47 2.0 10
(−12) (−500)
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• The products shown in bold are also manufactured in offshore fabs.
The internal connection diagrams only show the general configurations of the circuits.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
15
2010/9ꢀSCE0004K
Junction FETs
Junction FETs (Leaded Type)
Package
TO-92 (SC-43)
5.1 MAX
VGDS (V)
IG (mA)
Max
⎪Yfs⎪(mS)
Min
Classification
Max
IDSS (mA)
(mm)
Nch
Pch
−50
10
1.2 to 14
1.5
1
2SK246
50
−10
−1.2 to −14
2SJ103
−50
10
10
10
1.2 to 14
1.2 to 14
5 to 30
4
5
2SK117
⎯
General-purpose
−50
−40
2SK362
⎯
⎯
25
2SK363
−40
−50
−40
−40
10
10
10
10
2.6 to 20
0.3 to 6.5
2.6 to 20
2.6 to 20
12
1.2
⎯
25
2SK364
2SK30ATM
2SK170
⎯
⎯
Low noise
2SK369
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Surface-Mount Type)
Package
S-MINI (SC-59)
USM (SC-70)
2.9
2.0
VGDS (V)
Max
IG (mA)
Max
⎪Yfs⎪(mS)
Min
Classification
IDSS (mA)
(mm)
(mm)
Nch
Pch
Nch
Pch
−50
10
0.3 to 6.5
1.2
1
2SK208
2SK879
50
−10
−1.2 to −14
2SJ106
2SJ144
General-purpose
−50
10
1.2 to 14
4
2SK209
⎯
2SK880
⎯
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
16
2010/9ꢀSCE0004K
(Surface-Mount Type) (Electret Condense Microphone)
Package
VESM
TESM3
VESM2
CST3
1.2
1.4
1.2
0.6
VGDS (V)
Max
IG (mA)
Max
IDSS Rank
(µA)
⎪Yfs⎪(mS) Ciss (pF)
Characteristics
Min
Typ.
0.38
0.5
0.395
0.3 (max)
0.35
(mm)
(mm)
(mm)
(mm)
High gain
A = 80 to 200
B = 170 to 300
Low THD
Low Noise
Small Ciss
High gain
Low THD
Small Ciss
−20
−20
10
10
0.55
0.9
3.6
3.5
2SK3582MFV
2SK3857MFV
2SK3582TK
2SK3857TK
2SK3582TV
2SK3857TV
2SK3582CT
2SK3857CT
A = 140 to 240
B = 210 to 350
A = 140 to 240
AK = 100 to 250
B = 210 to 350
BK = 210 to 400
C = 320 to 500
A = 140 to 240
B = 210 to 350
High gain
Small Ciss
−20
−20
10
10
1.35
0.65
4.0
1.8
2SK4059MFV
2SK4059TK
TTK101TV
2SK4059TV
2SK4059CT
Very Low Noise
Very Small Ciss
TTK101MFV *
*
⎯
⎯
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
Junction FETs (Dual) (Surface-Mount Type)
Package
SMV
USV
2.9
2.0
⎪Yfs⎪(mS)
Min
♦
Internal Connections
Classification
VGDS (V)
IG (mA)
IDSS (mA)
(mm)
(mm)
Pch x 2
Nch x 2
Pch x 2
Nch x 2
Q1
Q2
General-purpose
−50
10
1.2 to 14
4
2SK2145
⎯
2SK3320
⎯
♦
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
The internal connection diagrams only show the general configurations of the circuits.
17
2010/9ꢀSCE0004K
Combination Products of Different Type Devices
Combination Products of Different Type Devices (5-Pin Packages (UFV, SMV), 6-Pin Packages (ES6, US6, SM6) )
Part Number
US6 Package
2.0
Ratings
ES6 Package
UFV Package
SMV Package
SM6 Package
1.6
2.0
2.9
2.9
Component
Devices
Breakdown
Voltage
(V)
Internal Connections
Features
Current
(mA)
(mm)
(mm)
(mm)
(mm)
(mm)
PNP Low VCE(SAT),
suitable for power
supply switches
2.5-V gate drive
(Vth = 1.5 V max),
Ron = 20 Ω typ.
PNP Low VCE(SAT),
suitable for power
supply switches
2.5-V gate drive
(Vth = 1.3 V max),
Ron = 4 Ω typ.
Q1 2SA1955 VCEO −12
IC −400
⎯
⎯
⎯
HN7G01FU
⎯
⎯
⎯
⎯
Q2 2SK1829
VDS
20
ID
50
PNP + Nch
Q1 2SA1955 VCEO −12
Q2 SSM3K03FE VDS 20
Q1 2SA1955 VCEO −12
IC −400
HN7G01FE
⎯
Q1
Q2
ID
50
PNP Low VCE(SAT),
suitable for power
supply switches
Internal 1-MΩ resistor
(RGS)
IC −400
⎯
⎯
HN7G03FU
⎯
⎯
Q2 SSM3K04FU VDS 20
ID
100 2.5-V gate drive
(Vth = 1.3 V max),
Ron = 4 Ω typ.
PNP (Internal resisters),
R = 4.7 kΩ
Q1 RN2310
Q2 2SK1829
Q1 RN2310
VCEO −50
IC −100
PNP (BRT) + Nch
⎯
⎯
⎯
HN7G02FU
⎯
⎯
⎯
⎯
2.5-V gate drive
(Vth = 1.5 V max),
Ron = 20 Ω typ.
PNP (Internal resisters),
R = 4.7 kΩ
VDS
20
ID
50
Q1
Q2
VCEO −50
IC −100
R
HN7G02FE
⎯
2.5-V gate drive
(Vth = 1.3 V max),
Ron = 4 Ω typ.
Q2 SSM3K03FE VDS 20
ID
50
PNP Low VCE(SAT),
suitable for power
supply switches
PNP + NPN (BRT)
Q1 2SA1955 VCEO −12
IC −400
R1
R2
⎯
⎯
⎯
⎯
HN7G04FU
HN7G05FU
⎯
⎯
⎯
⎯
Q1
Q2
NPN (Internal resisters),
R1 = 10 kΩ,
100
Q2 RN1307
Q1 RN2101
Q2 2SK1830
VCEO 50
IC
R2 = 47 kΩ
PNP (Internal resisters),
R1 = 4.7 kΩ,
IC −100
PNP (BRT) + Nch
VCEO −50
R2 = 4.7 kΩ
Q1
Q2
2.5-V gate drive
(Vth = 1.5 V max),
Ron = 20 Ω typ.
R1
R2
VDS
20
ID
50
PNP Low VCE(SAT),
suitable for power
supply switches
Q1 2SA1955 VCEO −12
IC −400
HN7G06FE
HN7G08FE
⎯
⎯
HN7G06FU
⎯
⎯
⎯
⎯
PNP + NPN (BRT)
NPN (Internal resisters),
Q2 RN1104
VCEO 50
IC
100 R1 = 47 kΩ,
R1
R2
R2 = 47 kΩ
Q1
Q2
PNP Low VCE(SAT),
Q1 2SA1955 VCEO −12
IC −400 suitable for power
supply switches
⎯
NPN (Internal resisters),
Q2 RN1306
VCEO 50
IC
100 R1 = 4.7 kΩ,
R2 = 47 kΩ
NPN Low VCE(SAT),
NPN + NPN (BRT)
suitable for power
supply switches
Q1 2SC5376 VCEO 12
IC
400
100
R1
R2
⎯
⎯
HN7G07FU
⎯
⎯
Q1
Q2
NPN (Internal resisters),
R1 = 2.2 kΩ,
Q2 RN1115
VCEO 50
IC
R2 = 10 kΩ
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
The internal connection diagrams only show the general configurations of the circuits.
18
2010/9ꢀSCE0004K
Combination Products of Different Type Devices (5-Pin Packages (UFV, SMV), 6-Pin Packages (ES6, US6, SM6) ) (Continued)
Part Number
Ratings
ESV Package ES6 Package
UFV Package
USV Package
SMV Package
SM6 Package
2.0
1.6
1.6
2.0
2.9
2.9
Component
Devices
Breakdown
Internal Connections
Features
Current
(mA)
Voltage
(V)
(mm)
(mm)
(mm)
(mm)
(mm)
(mm)
NPN
NPN (BRT) + Nch
(Internal resisters),
R1 = 47 kΩ,
Q1 RN1104F VCEO 50 IC 100
R1
⎯
⎯
HN7G09FE
HN7G10FE
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
R2 = 47 kΩ
Q1
Q2
2.5-V gate drive
R2
Q2 SSM3K15FS VDS 30 ID 100 (Vth = 1.5 V max),
Ron = 4 Ω typ..
NPN + Nch
NPN Low VCE(SAT),
Q1 2SC5376F VCEO 12 IC 400 suitable for power
supply switches
Q1
Q2
2.5-V gate drive
Q2 SSM3K03FE VDS 20 ID 50 (Vth = 1.3 V max),
Ron = 4 Ω typ.
PNP + NPN (BRT)
Q1 2SA2214 VCEO 20 IC 1500 PNP, high-current
NPN
R1
R2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
HN4G01J
⎯
HN7G11F
*
Q1
Q2
(Internal resisters),
Q2 RN1102 VCEO 100 IC 100
R1 = 10 kΩ,
R2 = 10 kΩ
Common emitter
NPN + NPN (BRT)
General-purpose
Q1 2SC4116 VCEO 50 IC 150
NPN transistor
Q1
Q2
⎯
NPN
R2
(Internal resisters),
Q2 RN1303 VCEO 50 IC 100
R1 = 22 kΩ,
R1
R2 = 22 kΩ
Independent
small-signal diode
Standard high-speed
Q1 1SS352
VR 80 IO 100
HN2E01F
HN2E02F
switching
+ NPN
Q2 2SC4666 VCEO 50 IC 150 High-hFE-type NPN
Standard high-speed
Q1
Q1 1SS352
VR 80 IO 100
switching
Q2
General-purpose
NPN transistor
Q2 2SC4116 VCEO 50 IC 150
Independent
PNP + small-signal
diode
High breakdown
voltage PNP
Q1 2SA1587 VCEO −120 IC −100
⎯
⎯
⎯
⎯
⎯
⎯
HN2E04F
Q1
Q2
Standard high-speed
switching
Q2 1SS352
VR 80 IO 100
Independent
BRT (PNP) +
PNP
(Internal resisters),
R1 = 47 kΩ,
R2 = 47 kΩ
Q1 RN2304 VCEO −50 IC −100
small-signal diode
⎯
⎯
⎯
⎯
⎯
⎯
HN2E05J
⎯
⎯
Q1
R1
Q2
Standard high-speed
switching
R2
Q2 1SS352
Q1 1SS417
VR 80 IO 100
VR 40 IO 100
SBD + PNP (BRT)
Schottky barrier
diodes
HN2E07JE
⎯
PNP
Q1
Q2
(Internal resisters),
R1 = 47 kΩ,
R2 = 47 kΩ
R1
R2
Q2 RN2104MFV VCEO −50 IC 100
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
The internal connection diagrams only show the general configurations of the circuits.
19
2010/9ꢀSCE0004K
MOSFETs
Small-Signal MOSFETs (Single-Type)
Absolute
Maximum Ratings
CST3
Package
VESM
SSM
USM (SC-70)
UFM
S-MINI (SC-59)
2.9
0.6
2.0
2.0
1.6
1.2
VDDS VGSS ID
(V) (V) (mA)
0.38
0.35
(mm)
(mm)
(mm)
(mm)
(mm)
(mm)
★
★
★
20
10 100
SSM3K04FV
** SSM3K37MFV
SSM3K04FS
SSM3K04FU
SSM3K16FU
20 ±10 250 SSM3K37CT
20 ±10 100 SSM3K16CT
20 ±10 180 SSM3K35CT
20 ±10 500
*
SSM3K37FS
SSM3K16FS
SSM3K35FS
SSM3K36FS
SSM3K43FS
SSM3K15FS
**
SSM3K35MFV
SSM3K36MFV
SSM3K36TU
20 ±10 500
#*
30 ±20 100 SSM3K15CT
SSM3K15FV
SSM3K15FU
SSM3K15F
N-ch
30 ±20 100 SSM3K15ACT ** SSM3K15AMFV
SSM3K15AFS
SSM3K44FS
SSM3K15AFU
**
30 ±20 100
30 ±20 200
30 ±20 400
SSM3K44MFV #
*
#*
2SK2009
SSM3K09FU
50
±7 100
SSM3K17FU
60 ±20 200
60 ±20 200
60 ±20 200
SSM3K7002AFU
SSM3K7002BFU
SSM3K7002AF
SSM3K7002BF
2SK1062
SSM3K7002BFS
*
*
*
−20
±8 −330
SSM3J36MFV
SSM3J16FV
SSM3J35MFV
SSM3J15FV
SSM3J36FS
SSM3J16FS
SSM3J35FS
SSM3J15FS
SSM3J36TU
−20 ±10 −100 SSM3J16CT
−20 ±10 −100 SSM3J35CT
−30 ±20 −100 SSM3J15CT
−30 ±20 −200
SSM3J16FU
SSM3J15FU
SSM3J15F
2SJ305
P-ch
−30 ±20 −200
SSM3J09FU
2SJ344
−50
−60 ±20 −200
: Internal 1-MΩ resistor (RGS)
#: High ESD protection
−7 −50
2SJ343
2SJ168
★
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
20
2010/9ꢀSCE0004K
Vth
(V)
Ron
(Ω)
ton
(ns)
Typ.
toff
(ns)
Typ.
@VGS
(V)
Min
Max Typ.
Max
0.7
0.35
0.6
1.3
1.0
4
3.07
5.2
5
12
5.6
15
2.5
1.5
1.5
1.2
1.5
1.5
2.5
2.5
2.5
2.5
4
160
18
190
36
1.1
70
125
300
75
0.4
1.0
20
115
30
0.35
0.35
0.8
1.0
0.95
0.95
4
1.52
1.52
7
1.0
30
75
1.5
50
180
35
0.8
1.5
3.3
4.0
1.2
0.8
22
5.7
7.0
2.0
1.2
40
5.5
50
0.8
1.5
200
120
68
0.5
1.5
60
1.1
1.8
72
0.9
1.5
2.5
4.5
4.5
10
100
3
40
1.0
2.5
1.8
2.1
0.6
2.23
18
3.3
3.3
1.0
3.60
45
7
1.5
3.1
3.3
14
14.5
75
2.0
3.5
−0.3
−0.6
−0.4
−1.1
−0.5
−1.1
−0.8
−2.0
−1.0
−1.1
−1.0
−1.7
−1.5
−1.8
−2.5
−3.5
−1.5
−1.5
−1.2
−2.5
−2.5
−4
90
200
190
251
175
150
85
130
175
65
11
44
14
32
2.4
3.3
20
4.0
4.2
50
60
85
−4
150
14
130
100
1.3
2.0
−10
*: New product
**: Under development
21
2010/9ꢀSCE0004K
Small-Signal MOSFETs (Dual Type)
Absolute
Maximum Ratings
Ron
Package
Vth (V)
(Ω)
ESV
ES6
USV
US6
UF6
1.6
1.6
2.0
2.0
2.0
Internal FETs
@V
GS
VDDS VGSS
(V) (V) (mA)
ID
Min Max Typ. Max
(V)
(mm)
(mm)
▲1
(mm)
(mm)
▲4
(mm)
20 10 100
SSM6N04FU
SSM3K04FU x 2
SSM3K16FU x 2
0.7 1.3
4
12 2.5
★
20 ±10 100 SSM5N16FE ▲1 SSM6N16FE
SSM5N16FU ▲1 SSM6N16FU
SSM6N37FU
▲1
0.6 1.1 5.2 15 1.5
20 ±10 250
20 ±10 180
20 ±10 500
20 ±10 500
SSM6N37FE
SSM6N35FE
SSM6N36FE
**
SSM3K37MFV x 2 0.35 1.0 3.07 5.6 1.5
SSM3K35MFV x 2 0.4 1.0 20 1.2
▲1
▲1
SSM6N35FU
▲1
5
SSM6N36TU ▲1
SSM3K36TU x 2
SSM3K43FS x 2
SSM3K15FU x 2
0.35 1.0 0.95 1.52 1.5
0.35 1.0 0.95 1.52 1.5
SSM6N43FU
SSM5N15FU ▲1 SSM6N15FU
SSM6N15AFU
▲1
▲1
N-ch
x 2
30 ±20 100 SSM5N15FE ▲1 SSM6N15FE
▲1
▲1
0.8 1.5
4
7
2.5
30 ±20 100
30 ±20 100
30 ±20 400
50 ±7 100
SSM6N15AFE
SSM6N44FE
**
**
SSM3K15AMPV x 2 0.8 1.5 3.3 5.7 2.5
SSM6N44FU
▲1
▲1
▲1
SSM3K44FS x 2
SSM3K09FU x 2
SSM3K17FU x 2
SSM3K7002AFU x
2
0.8 1.5 4.0 7.0 2.5
1.1 1.8 0.8 1.2
SSM6N09FU
4
SSM6N17FU
0.9 1.5 22 40 2.5
60 ±20 200
60 ±20 200
SSM6N7002AFU ▲1
SSM6N7002BFU ▲1 *
1.0 2.5 1.8 3.3 4.5
SSM6N7002BFE ▲1 *
SSM3K7002BF x 2 1.5 3.1 2.1 3.3 4.5
−20 ±10 −100 SSM5P16FE ▲2 SSM6P16FE
▲2
SSM5P16FU ▲2 SSM6P16FU
▲2
▲2
SSM3J16FU x 2
SSM3J35FU x 2
−0.6 −1.1 18 45 −1.5
−0.4 −1.0 11 44 −1.2
−0.3 −1.0 2.23 3.6 −1.5
−20 ±10 −100
−20 ±8 −330
−20 ±12 −200
−30 ±20 −200
SSM6P35FE
SSM6P36FE
▲2
SSM6P35FU
P-ch
x 2
▲2 *
SSM6P36TU ▲2 * SSM3J36TU x 2
SSM3J05FU x 2
SSM5P05FU ▲2 SSM6P05FU
SSM6P09FU
▲2
▲2
▲2
−0.6 −1.1 3.2
4 −2.5
SSM3J09FU x 2
−1.1 −1.8 3.3 4.2 −4
−1.1 −1.7 14 32 −2.5
−30 ±20 −100 SSM5P15FE ▲2 SSM6P15FE
▲2
▲3
SSM5P15FU ▲2 SSM6P15FU
SSM3J15FU x 2
20 ±10 180
SSM6L35FE
SSM3K35FU
0.4 1.0
5
20 1.2
SSM6L35FU
▲3
+ SSM3J35FU
−20 ±10 −100
−0.4 −1.0 11 4.4 −1.2
0.35 1.0 0.95 1.52 1.5
−0.3 −1.0 2.23 3.6 −1.5
N-ch
+
20 ±10 500
SSM6L36FE
SSM3K36TU
SSM6L36TU ▲3 *
▲3 *
+ SSM3J36TU
−20 ±8 −330
P-ch
30 ±20 400
−30 ±20 −200
SSM3K09FU
SSM3J09FU
1.1 1.8 0.8 1.2
4
SSM6L09FU
▲3
−1.1 −1.8 3.3 4.2 −4
★
: Internal 1-MΩ resistor (RGS)
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
**: Under development
♦
Internal Connections
Number of Pins
▲1
▲2
▲3
▲4
Q1
Q2
Q1
Q2
5-pin ESV/USV
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6-pin ES6/US6/UF6
♦
The internal connection diagrams only show the general configurations of the circuits.
22
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs)
VDSS
(V)
VGSS
(V)
ID
(A)
PD
(W)
RDS(ON) Max (mΩ)
VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V VGS = 4.0 V
Ciss
(pF)
Internal
Connections
Package
Polarity
Part Number
Internal FETs
CST4
N-ch
SSM4K27CT
20
±12
0.5
0.4
⎯
390
260
205
174
⎯
(4)
(mm)
SSM6K211FE
SSM6K203FE
SSM6K202FE
SSM6K204FE
SSM6K208FE
SSM6K25FE
SSM6K24FE
SSM6K22FE
SSM6K210FE
SSM6K30FE
SSM6K31FE
SSM6N42FE
SSM3K123TU
SSM3K121TU
SSM3K104TU
SSM3K119TU
SSM3K116TU
SSM3K122TU
SSM3K101TU
SSM3K127TU
SSM3K131TU
SSM3K124TU
SSM3K105TU
SSM3K107TU
SSM3K128TU
SSM3K106TU
SSM6K403TU
SSM6K18TU
SSM6K411TU
SSM6K404TU
SSM6K405TU
SSM6K406TU
SSM6K34TU
SSM6K32TU
SSM6K407TU
SSM6N39TU
SSM6N29TU
SSM6N25TU
SSM6N24TU
SSM6N40TU
*
20
20
30
20
30
20
30
20
30
20
20
20
20
20
20
30
30
20
20
30
30
30
30
20
30
20
20
20
20
20
20
30
30
60
60
20
20
20
30
30
±10
±10
±12
±10
±12
±12
±12
±12
±20
±20
±20
±10
±10
±10
±12
±12
±12
±10
±12
±12
±20
±20
±20
±20
±20
±20
±10
±12
±12
±10
±20
±20
±20
±20
±10
±12
±12
±12
±20
±12
3.2
2.8
2.3
2.0
1.9
0.5
0.5
1.4
1.4
1.2
1.2
0.8
4.2
3.2
3.0
2.5
2.2
2.0
2.2
2.0
6.0
2.4
2.1
1.5
1.5
1.2
4.2
4.0
10
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.15
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
118
153
⎯
307
⎯
⎯
⎯
⎯
⎯
⎯
⎯
600
66
82
106
145
214
296
395
⎯
59
76
47(@4.5 V)
61
510
400
270
195
123
268
245
125
57
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(1)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(1)
(1)
(1)
(1)
(1)
101
164
177
190
180
230
⎯
85
ES6
126
133
145
145
170
371
420
540
240
28
N-ch
1.6
0.55
⎯
⎯
(mm)
⎯
⎯
60
⎯
⎯
36
*
450
43
330
32
90
N-ch x 2
1010
400
320
270
245
195
125
123
140
⎯
⎯
⎯
304
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
66
93
63
48
110
134
⎯
74
56
90
74
UFM
135
161
138
167
⎯
100
123
103
123
211
230
286
⎯
N-ch
2.0
0.7
41.5 (@4.5 V) 450
⎯
⎯
120
200
180
102
60
(mm)
⎯
⎯
⎯
⎯
410
⎯
⎯
360
57
⎯
⎯
530
36
43
32
28
1050
1100
450
400
195
⎯
⎯
147
307
⎯
⎯
⎯
⎯
247
⎯
⎯
⎯
⎯
⎯
54
40
⎯
23.8
70
12(@4.5 V)
55
2.0
4.4
3.0
2.0
2.0
1.6
0.8
0.5
0.5
1.6
0.5
100
214
⎯
UF6
164
⎯
126
N-ch
38.5 (@4.5 V) 490
⎯
⎯
77 (@4.5 V)
440
470
140
150
260
#
⎯
⎯
2.0
0.7
⎯
⎯
440
190
235
395
⎯
139
178
190
180
⎯
119
(mm)
143
268 SSM3K102TU x 2
268 SSM6K25FE x 2
245 SSM6K24FE x 2
145
N-ch x 2
145
⎯
182
180
⎯
#: High ESD protection
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
Internal Connections
(1)
(2)
(3)
(4)
Q1
Q2
♦
The internal connection diagrams only show the general configurations of the circuits.
23
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
Qg
(nC)
(typ.)
VDSS
(V)
VGSS
(V)
PD
(W)
Ciss
(pF)
Internal
Connections
Package
Polarity
Part Number
ID (A)
VGS = VGS = VGS =
1.5 V 1.8 V 2.0 V
VGS = VGS =
4.5 V 10 V
VGS = 2.5 V VGS = 4 V
US6
SSM6K08FU
20
20
30
±12
±12
±20
1.6
1.1
1.5
0.3
0.3
0.3
⎯
⎯
⎯
⎯
⎯
⎯
210
⎯
140
210
⎯
105
160
220
⎯
⎯
⎯
⎯
⎯
306
125
102
⎯
⎯
⎯
(1)
(1)
(1)
SSM6K06FU
SSM6K07FU
N-ch
2.0
0.9
⎯
130
(mm)
SSM3K310T
SSM3K309T
SSM3K301T
SSM3K01T
SSM3K02T
SSM3K316T
SSM3K315T
SSM3K14T
SSM3K320T
SSM3K318T
20
20
20
30
30
30
30
30
30
60
±10
±12
±12
±10
±10
±12
±20
±20
±20
±20
5.0
4.7
3.5
3.2
2.5
4.0
6.0
4.0
4.2
2.5
0.7
0.7
66
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
43
47
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
32
35
28
31
⎯
⎯
⎯
⎯
1120
1020
320
152
115
270
450
460
190
235
14.8
⎯
4.8
⎯
⎯
4.3
10.1
5
(7)
(7)
(7)
(7)
(7)
(7)
(7)
(7)
(7)
(7)
TSM
0.7
110
⎯
74
56
⎯
⎯
1.25
1.25
1.25
1.25
1.25
1.4
150
250
87
120
200
⎯
⎯
67
⎯
⎯
⎯
⎯
⎯
N-ch
131
⎯
65
53
2.9
0.7
⎯
⎯
⎯
⎯
41.5
57
27.6
39
⎯
(mm)
⎯
⎯
⎯
77
50
4.6
7
*
*
0.7
⎯
145
107
SOT-23F
30
±12
3.5
2
⎯
289
⎯
170
⎯
126
⎯
123
⎯
(7)
N-ch
SSM3K329R
2.9
0.8
(mm)
(mm)
(mm)
Chip LGA
TPCL4201
TPCL4203
TPCL4202
20
24
30
±12
±12
±12
6
6
6
1.5
1.5
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
52
55
64
33
38
42
31
36
40
⎯
⎯
⎯
⎯
⎯
⎯
11.5
10
(6)
(6)
(6)
N-ch Dual
10
TPCF8003
TPCF8002
20
30
±12
±20
7
7
2.5
2.5
⎯
⎯
⎯
⎯
⎯
⎯
34
⎯
⎯
18
32
⎯
⎯
⎯
9.5
(2)
(2)
VS-8
VS-6
N-ch Single
⎯
21
11.5
N-ch Dual TPCF8201
20
±12
3
1.35
⎯
⎯
100
66
⎯
49
⎯
⎯
7.5
(3)
TPC6012
TPC6008-H
TPC6011
20
30
30
30
40
40
60
20
30
30
30
60
30
30
40
±12
±20
±20
±12
±20
±20
±20
±12
±20
±20
±20
±20
±20
±20
±20
6
2.2
2.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
41
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
38
⎯
⎯
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
20
74
⎯
60
20
⎯
75
81
59
⎯
20
8.5
12.9
57
50
50
40
⎯
232
⎯
9
4.8
14
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(4)
(4)
(4)
(4)
(4)
(3)
(3)
(3)
5.9
6
2.2
32
N-ch Single
TPC6005
6
2.2
28
⎯
19
TPC6006-H
TPC6009-H
TPC6010-H
TPCP8006
TPCP8008-H
3.9
5.3
6.1
9.1
8
2.2
⎯
⎯
⎯
13.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
98
⎯
4.4
4.7
12
225
640
⎯
2.2
(mm)
2.2
63
1.68
1.68
1.68
1.68
1.68
1.48
1.48
1.48
10
22
⎯
23
14.7
26
PS-8
N-ch Single TPCP8004
TPCP8005-H
⎯
8.3
11
5
14
⎯
15.7
64
20
TPCP8007-H
TPCP8201
TPCP8204
TPCP8203
⎯
11
⎯
4.2
4.2
4.7
77
10
(mm)
190
⎯
77
4.6
16
N-ch Dual
60
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
♦
Internal Connections
(1)
(2)
(3)
(4)
(5)
(6)
(7)
8
7
6
5
8
7
6
5
8
7
6
5
6
5
4
4
3
2
4
1
3
2
1
2
3
1
1
2
3
4
1
2
3
4
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
24
2010/9ꢀSCE0004K
RDS(ON) Max (mΩ)
Qg (nC)
(typ.) Connections
Internal
Package
Polarity
Part Number
VDSS (V) VGSS (V) ID (A)
PD (W)
VGS =
4.5 V
VGS =
10 V
VGS = 2.0 V VGS = 2.5 V VGS = 4 V
TPCC8061-H
30
30
30
30
30
30
30
20
±20
±20
±20
±20
±20
±20
±20
±12
8
15
22
30
27
30
30
30
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
29
19.3
10.6
9.3
26
16.9
8.2
8
11
17
23
27
27
27
35
26
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
TPCC8003-H
TPCC8064-H
TPCC8006-H
TPCC8001-H
TPCC8002-H
TPCC8005-H
TPCC8007
13
19
22
22
22
26
27
TSON Advance
10.6
10.6
7.4
8.3
8.3
6.4
⎯
N-ch Single
(mm)
4.6
TPCC8008
30
±25
25
30
⎯
⎯
⎯
12.8
6.8
30
(2)
TPCC8009
TPC8061-H
30
30
±20
±20
24
8
27
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
26
11
(2)
(2)
1.9
30
25
TPC8025
TPC8030
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
60
60
60
60
±20
±25
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
11
11
11
12
12
13
13
13
15
17
17
17
18
18
18
18
18
18
18
18
18
7.5
12
16
18
18
9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
14.5
17
9
26
24
21
21
21
42
24
27
33
27
42
36
34
113
45
49
82
49
56
65
68
11
25
43
57
90
25
41
56
87
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
9
TPC8031-H
TPC8037-H
TPC8038-H
TPC8026
TPC8040-H
TPC8041
TPC8032-H
TPC8063-H
TPC8033-H
TPC8039-H
TPC8062-H
TPC8027
TPC8028
TPC8029
TPC8035-H
TPC8036-H
TPC8042
TPC8060-H
TPC8034-H
TPC8022-H
TPC8052-H
TPC8047-H
TPC8046-H
TPC8045-H
TPC8053-H
TPC8050-H
TPC8049-H
TPC8048-H
16.1
13.9
13.9
10
13.3
11.4
11.4
6.6
9.7
7
11.1
13.5
8.6
8.9
7.2
6.9
7.3
5.5
8
6.5
7
5.3
6
SOP-8
5.8
2.7
4.3
3.8
3.2
4.5
3.4
3.7
3.5
2.7
11.5
7.5
5.7
3.9
22.5
14.5
10.7
6.9
N-ch Single
7
3.6
5.1
6.5
4.2
4.5
3.5
13.3
8.8
6.6
4.4
24.2
15.5
11.5
7.4
(mm)
11
13
16
◎
: Common-drain type
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connections
(1)
(2)
(3)
(4)
8
7
6
5
8
7
6
5
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
1
2
3
4
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
25
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
Qg (nC)
(typ.) Connections
Internal
Package
Polarity
Part Number
VDSS (V) VGSS (V) ID (A) PD (W)
VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V
SOP-8
TPC8208
20
20
30
30
60
±12
±12
±20
±20
±20
5
6
1.5
1.5
1.5
1.5
1.5
⎯
⎯
⎯
⎯
⎯
70
30
⎯
⎯
⎯
50
20
⎯
⎯
⎯
⎯
⎯
27
23
64
⎯
⎯
21
20
57
9.5
22
16
14
11
(1)
(1)
(1)
(1)
(1)
TPC8207
N-ch Dual
TPC8212-H
TPC8216-H
6
6.4
3.8
(mm)
TPC8218-H
TPCA8011-H
TPCA8023-H
TPCA8063-H
TPCA8040-H
TPCA8030-H
TPCA8031-H
TPCA8021-H
TPCA8062-H
TPCA8018-H
TPCA8039-H
TPCA8024
TPCA8036-H
TPCA8012-H
TPCA8025
TPCA8019-H
TPCA8026
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
60
60
60
±12
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
±20
40
21
22
23
24
24
27
28
30
34
35
38
40
40
45
45
45
45
50
60
7.5
20
32
38
46
15
24
28
45
30
35
30
30
30
45
42
45
45
45
45
45
45
45
45
45
45
45
45
30
30
45
45
45
30
45
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3.5
15.7
8.7
10.8
13.4
13.4
13
⎯
12.9
6.8
5.6
11
32
21
27
23
21
21
23
34
34
36
45
50
42
49
66
113
56
66
88
76
11
25
43
55
90
25
41
55
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
11
9
7.1
8.2
6.6
7.8
4.8
6.8
6
5.6
6.2
5.7
4.3
4.2
4.9
3.5
3.1
2.2
3.3
3.4
2.8
1.9
27
SOP Advance
N-ch Single
4.1
4.5
5.7
3.9
3.2
2.4
35
TPCA8042
(mm)
TPCA8060-H
TPCA8028-H
TPCA8055-H
TPCA8020-H
TPCA8052-H
TPCA8047-H
TPCA8046-H
TPCA8045-H
TPCA8053-H
TPCA8050-H
TPCA8049-H
13.1
8.5
6.3
4.1
24
11.3
7.3
5.4
3.6
22.3
14.2
10.4
15.3
11.2
PW-Mini
LSTM
2SK2615
2SK3658
60
60
⎯
⎯
2
2
1.5
1.5
⎯
⎯
⎯
⎯
440
440
⎯
⎯
300
300
6
N-ch Single
5.0
(mm)
2SK2989
50
⎯
5
0.9
⎯
⎯
⎯
330
380
⎯
⎯
150
270
6.5
5.8
N-ch Single
2SK2961
60
⎯
2
0.9
⎯
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
26
2010/9ꢀSCE0004K
RDS(ON) Max (mΩ)
Qg
(nC)
(typ.)
Internal
Connections
Package
TPS
Polarity
Part Number
2SK2229
VDSS (V) VGSS (V) ID (A) PD (W)
VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 10 V
N-ch
60
⎯
5
1.3
⎯
⎯
300
⎯
⎯
160
12
Single
(mm)
PW-Mold
2SK2493
2SK4033
16
60
⎯
⎯
5
5
20
20
⎯
⎯
120
100
150
⎯
⎯
⎯
⎯
⎯
23
15
N-ch
Single
⎯
100
(mm)
(mm)
New PW-Mold2
N-ch
2SK4017
60
⎯
5
20
⎯
⎯
150
⎯
⎯
100
15
Single
DP
2SK2614
2SK2782
50
60
⎯
⎯
20
20
40
40
⎯
⎯
⎯
⎯
80
90
⎯
⎯
⎯
⎯
46
55
25
25
N-ch
Single
(mm)
TK40P03M1
TK45P03M1
TK50P03M1
TK60P03M1
TK20P04M1
TK40P04M1
TK50P04M1
TK70X04K3
TK70X04K3Z
2SK3843
30
30
30
30
40
40
40
40
40
40
40
60
±20
±20
±20
±20
±20
±20
±20
⎯
40
45
50
60
20
40
50
70
70
75
80
70
40
33
60
48
27
60
60
80
80
125
125
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
14.4
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10.8
9.4
7.5
6.2
29
9.4
13
DPAK
9.8
7.9
34
13.3
21
N-ch
Single
7.6
15
(mm)
13.4
10.2
⎯
11
8.7
5.6
5.6
3.5
3.5
8
20
62
⎯
⎯
62
TFP
⎯
8
210
100
62
N-ch
TK80X04K3
TK70X06K3
⎯
⎯
Single
⎯
⎯
(mm)
2SK3842
60
60
40
⎯
⎯
⎯
75
75
125
125
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
5.8
5.8
3
196
196
102
2SK4034
TK100F04K3
100
TO-220 SM(W)
TK100F04K3L
TK150F04K3
TK100F06K3
TK150F04K3L
TK130F06K3
40
40
60
40
60
⎯
⎯
⎯
⎯
⎯
100
150
100
150
130
200
300
200
300
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4.5
⎯
⎯
3.2
⎯
3
105
166
98
2.1
5
N-ch
Single
2.1
3.4
190
170
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
27
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
Qg
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
(nC)
(typ.)
VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V
TO-220FL
2SK3847
2SK3051
2SK2311
2SK2266
2SK2376
40
50
60
60
60
32
45
25
45
45
30
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
55
25
26
⎯
⎯
⎯
⎯
16
30
46
30
17
40
36
(mm)
N-ch Single
40
38
TO-220SM
TO-220NIS
65
60
100
110
(mm)
2SK3846
2SK2507
2SK2886
2SK2232
2SK3662
2SK2385
2SK3844
40
50
50
60
60
60
60
26
25
45
25
35
36
45
25
30
40
35
35
40
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
36
80
19
55
⎯
28
⎯
⎯
⎯
⎯
⎯
⎯
18
46
40
25
20
66
N-ch Single
46
38
12.5
30
91
60
(mm)
5.8
196
TO-220SIS
TK30A06J3A
TK70A06J1
60
60
30
70
25
45
⎯
⎯
⎯
⎯
⎯
⎯
35
26
36
87
N-ch Single
7.6
6.4
(mm)
TO-220
TK25E06K3
60
60
25
50
64
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
18
⎯
N-ch Single
TK50E06K3A
104
8.5
54
(mm)
2SK3506
TK70J04J3
2SK2550
2SK2744
2SK2551
2SK2745
2SK2233
2SK2398
2SK2173
2SK2445
2SK2313
2SK3845
30
40
50
50
50
50
60
60
60
60
60
60
45
70
45
45
50
50
45
45
50
50
60
70
100
150
100
125
150
150
100
100
125
125
150
125
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
16
55
⎯
25
⎯
15
⎯
⎯
8.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
20
3.8
30
20
11
9.5
30
30
17
18
11
5.8
39
210
36
TO-3P(N)
68
130
130
60
N-ch Single
60
110
110
170
196
(mm)
TO-3P(L)
N-ch Single
2SK2267
60
60
150
⎯
⎯
15
⎯
11
170
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
28
2010/9ꢀSCE0004K
60 V < VDSS ≤ 250 V (Power MOSFETs) (N-ch MOSFETs)
RDS(ON) Max (mΩ)
VGS VGS VGS
Qg (nC) Internal
(typ.) Connections
Package
Polarity
Part Number
VDSS (V) VGSS (V) ID (A) PD (W)
VGS
VGS
VGS
VGS
= 1.8 V = 2.0 V = 2.5 V = 4 V = 4.5 V = 7 V = 10 V
PS-8
N-ch Single
TPCP8003-H
100
±20
2.2
1.68
⎯
⎯
⎯
⎯
190
⎯
180
7.5
(1)
(mm)
(mm)
SOP-8
TPC8051-H
TPC8054-H
TPC8012-H
80
±20
±20
13
10
1.9
1.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10.1
21.5
⎯
⎯
9.7
85
92
(1)
(1)
100
19.9
N-ch Single
200
±20
1.8
1.9
⎯
⎯
⎯
⎯
⎯
⎯
400
11
(1)
TPCA8070-H
TPCA8051-H
TPCA8072-H
TPCA8006-H
TPCA8071-H
TPCA8054-H
TPCA8009-H
TPCA8010-H
TPCA8008-H
80
±25
±20
±25
±20
±25
±20
±20
±20
±20
12
28
8
45
45
45
45
45
45
45
45
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
35
9.4
71
21
91
22
12
70
89
10
10
10
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
80
SOP Advance
100
100
100
100
150
200
250
18
20
20
7
⎯
67
N-ch Single
⎯
20
21.3
⎯
19.7
350
450
580
(mm)
(mm)
5.5
4
⎯
⎯
PW-Mini
LSTM
2SK2963
2SK2992
100
200
⎯
⎯
1
1
1.5
1.5
⎯
⎯
⎯
⎯
⎯
⎯
950
⎯
⎯
⎯
⎯
700
6.3
3
N-ch Single
⎯
3500
2SK2962
2SK3670
100
150
⎯
⎯
1
0.9
0.9
⎯
⎯
⎯
⎯
⎯
⎯
950
⎯
⎯
⎯
⎯
700
6.3
4.6
N-ch Single
0.67
1700
⎯
(mm)
TPS
2SK2200
2SK2400
2SK2835
100
100
200
⎯
⎯
⎯
3
5
5
1.3
1.3
1.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
450
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
350
230
800
13.5
22
N-ch Single
10
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
8
7
6
5
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
29
2010/9ꢀSCE0004K
60 V < VDSS ≤ 250 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V) ID (A) PD (W)
VGS
VGS
VGS
VGS
VGS
VGS = 4 V
VGS = 7 V
= 1.8 V = 2.0 V = 2.5 V
= 4.5 V
⎯
= 10 V
2SK2201
2SK2399
2SK3669
2SK3205
2SK2162
2SK2920
2SK3462
2SK3342
100
100
100
150
180
200
250
250
3
5
20
20
20
20
20
20
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
450
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
350
230
13.5
22
PW-Mold
⎯
10
5
⎯
125
8.0
12
750
⎯
⎯
500
N-ch Single
1
⎯
5000
800
⎯
10
5
⎯
⎯
3
⎯
⎯
1700
1000
12
(mm)
4.5
⎯
⎯
10
2SK4018
2SK4019
2SK4020
2SK4022
2SK4021
100
100
200
250
250
3
5
20
20
20
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
450
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
350
230
13.5
22
New PW-Mold2
N-ch Single
5
800
10
3
⎯
1700
1000
12
(mm)
4.5
⎯
10
TFP
2SK3387
TK50X15J1
2SK3444
2SK3388
2SK3445
150
150
200
250
250
18
50
25
20
20
100
125
125
125
125
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
120
30
57
75
N-ch Single
N-ch Single
82
44
105
105
100
45
(mm)
(mm)
TO-220SM(W)
TK40F08K3
TK80F08K3
75
75
40
80
107
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8.5
4.3
80
175
TO-220FL
2SK2789
2SK2401
2SK3625
2SK2598
2SK2993
100
200
200
250
250
27
15
25
13
20
60
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
130
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
85
180
82
50
40
(mm)
(mm)
N-ch Single
125
60
44
TO-220SM
TO-220AB
250
105
40
100
100
2SK2314
2SK2914
100
250
27
75
20
⎯
⎯
⎯
⎯
⎯
⎯
130
⎯
⎯
⎯
⎯
85
50
20
N-ch Single
7.5
⎯
500
(mm)
2SK2391
2SK2882
2SK2013
2SK2381
2SK2350
2SK2965
2SK2382
2SK2417
2SK2508
2SK3994
100
150
180
200
200
200
200
250
250
250
20
18
1
35
45
25
25
30
35
45
30
45
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
130
180
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
85
120
5000
800
400
260
180
500
250
105
50
57
⎯
10
17
30
40
20
40
45
TO-220NIS
5
8.5
11
15
7.5
13
20
N-ch Single
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
30
2010/9ꢀSCE0004K
RDS(ON) Max (mΩ)
VGS VGS
= 2.5 V = 4 V = 4.5 V
Qg (nC) Internal
(typ.) Connections
Package
Polarity
Part Number
VDSS (V) VGSS (V) ID (A) PD (W)
VGS
VGS
VGS
VGS
VGS
= 1.8 V
= 2.0 V
= 7 V = 10 V
TK40A08K3
TK60A08J1
TK80A08K3
TK8A10K3
TK12A10K3
TK25A10K3
TK40A10J1
TK40A10K3
TK55A10J1
75
75
±20
±20
±20
±20
±20
±20
±20
±20
±20
40
60
80
8
35
45
40
18
20
25
40
40
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9.3
⎯
⎯
⎯
⎯
17
⎯
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
7.8
4.5
120
80
80
86
75
175
12.9
18
TO-220SIS
100
100
100
100
100
100
N-ch
12
25
40
40
55
Single
40
34
(mm)
15
76
15
85
10.5
110
TO-220
TK50E08K3
TK60E08K3
TK18E10K3
TK40E10K3
75
75
±20
±20
±20
±20
50
60
18
40
104
128
71
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
12
9
55
⎯
33
84
N-ch
Single
100
100
42
15
147
(mm)
(mm)
(mm)
2SK3940
2SK1381
2SK1529
2SK3497
2SK3176
2SK2967
75
⎯
⎯
⎯
⎯
⎯
⎯
70
50
10
10
30
30
150
150
120
130
150
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
46
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
32
830
⎯
52
68
200
88
TO-3P(N)
100
180
180
200
250
⎯
⎯
N-ch
Single
150
⎯
36
125
132
⎯
TO-3P(N)IS
2SK2467
2SK2995
2SK1382
2SK1530
180
250
100
200
⎯
⎯
⎯
⎯
9
80
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
29
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
830
68
⎯
132
176
⎯
N-ch
Single
30
60
12
TO-3P(L)
200
150
20
N-ch
Single
625
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
31
2010/9ꢀSCE0004K
250 V < VDSS ≤ 700 V (Power MOSFETs) (N-ch MOSFETs)
RDS(ON) Max (Ω)
VGS = 10 V
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
0.5
PD (W)
1.5
PW-Mini
N-ch Single
2SK3471
500
18
3.8
(mm)
LSTM
N-ch Single
2SK2998
500
0.5
0.9
18
3.8
(mm)
TPS
2SK3374
2SK3302
2SK2599
2SK2846
450
500
500
600
1
0.5
2
1.3
1.3
1.3
1.3
4.6
18
5
3.8
9
N-ch Single
3.2
5.0
2
9
(mm)
2SK3498
2SK3472
2SK3373
2SK3371
2SK2865
400
450
500
600
600
1
1
2
1
2
20
20
20
20
20
5.5
4.6
3.2
9.0
5.0
5.7
5
PW-Mold
N-ch Single
9
9
(mm)
(mm)
9
New PW-Mold
2SK4103
TK2P60D
500
600
5
2
40
60
1.5
4.3
16
7
N-ch Single
2SK4023
2SK4026
2SK4002
TK2Q60D
2SK4003
TK4P50D
TK5P50D
TK7P50D
TK5P53D
TK6P53D
TK4P55DA
TK4P55D
TK4P60DA
TK4P60DB
450
600
600
600
600
500
500
500
525
525
550
550
600
600
1
1
20
20
20
60
20
80
80
100
80
100
80
80
80
80
4.6
9.0
5.0
4.3
2.2
2.0
1.5
1.22
1.5
1.3
2.45
1.88
1.7
2.0
5
9
New PW-Mold2
N-ch Single
2
9
2
7
(mm)
3
15
9
4
5
11
12
11
12
9
7
DPAK
5
N-ch Single
6
3.5
4
(mm)
11
11
11
3.5
3.7
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
32
2010/9ꢀSCE0004K
RDS(ON) Max (Ω)
VGS = 10 V
Qg (nC)
(typ.)
Internal
Connections
Package
DP
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
N-ch Single
2SK3863
500
5
35
1.5
16
(mm)
TK10X40D
2SK3544
2SK3466
2SK3538
2SK3398
TK12X53D
2SK3438
TK12X60U
TK15X60U
TK20X60U
2SK2838
2SK2949
2SK3309
2SK3403
2SK2991
2SK3417
2SK2776
2SK3068
2SK2777
2SK3312
2SK2889
2SK3399
2SK3437
400
450
500
500
500
525
600
600
600
600
400
400
450
450
500
500
500
500
600
600
600
600
600
10
13
5
125
100
50
0.55
0.4
20
34
17
30
45
25
28
14
17
27
17
34
23
34
17
17
30
45
30
22
45
35
28
1.5
TFP
8
65
0.85
0.52
0.58
1.0
12
12
10
12
15
20
5.5
10
10
13
5
100
150
80
N-ch Single
(mm)
100
125
150
40
0.4
0.3
0.19
1.2
TO-220FL
80
0.55
0.65
0.4
65
100
50
1.5
#
5
50
1.8
(mm)
(mm)
N-ch Single
8
65
0.85
0.52
1.25
1.25
0.75
0.75
1.0
TO-220SM
TO-220AB
12
6
100
65
6
65
10
10
10
100
100
80
2SK2841
2SK2542
2SK3085
2SK2866
400
500
600
600
10
8
80
80
0.55
0.85
2.2
34
30
20
45
N-ch Single
3.5
10
75
125
0.75
(mm)
(mm)
TO-220NIS
2SK2679
2SK2952
2SK3310
2SK3743
2SK3313
2SK3265
400
400
450
450
500
700
5.5
8.5
10
13
12
10
35
40
40
40
40
45
1.2
0.55
0.65
0.4
17
34
23
34
45
53
N-ch Single
#
0.62
1.0
#: HSD type
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
33
2010/9ꢀSCE0004K
250 V < VDSS ≤ 700 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (Ω)
VGS = 10 V
2.45
2.45
1.75
1.35
1.2
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
2SK3757
2SK3766
450
450
450
450
450
450
450
450
450
450
450
450
450
450
450
450
450
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
525
525
525
525
550
550
550
550
550
550
550
550
550
550
550
550
600
600
600
600
600
600
2
2
30
30
30
35
35
35
35
40
40
40
45
45
45
45
50
50
50
30
35
35
35
35
35
35
35
35
40
40
40
45
45
40
45
45
45
45
45
50
50
50
35
35
35
45
30
35
35
35
40
40
45
45
45
45
50
50
25
30
35
35
35
35
9
8
TK5A45DA
TK6A45DA
TK7A45DA
TK8A45DA
TK8A45D
TK9A45D
2SK3869
TK11A45D
TK12A45D
TK13A45D
TK14A45DA
TK14A45D
TK16A45D
2SK3935
4.5
5.5
6.5
7.5
8
9
11
11
12
16
16
28
20
24
25
28
38
40
62
45
9
1.1
0.9
9
0.77
0.68
0.62
0.52
0.46
0.41
0.34
0.27
0.25
0.25
2.0
10
11
12
13
13.5
14
16
17
19
4
TK19A45D
TK4A50D
2SK3563
5
1.5
16
16
11
11
11
12
12
16
28
28
16
20
38
42
25
30
28
50
32
62
40
45
11
11
12
25
9
2SK3868
#
#
5
1.7
TK5A50D
TK5A50D5
TK6A50D
TK7A50D
TK7A50D5
TK8A50DA
2SK3561
5
1.5
5
2.1
6
1.4
7
1.22
1.68
1.04
0.85
0.97
0.85
0.72
0.6
#
#
7
7.5
8
2SK4042
8
TO-220SIS
TK8A50D
TK10A50D
TK11A50D
2SK3568
TK12A50D
TK12A50D5
TK13A50DA
2SK4012
8
10
11
12
12
12
12.5
13
13
15
15
18
4
N-ch Single
0.52
0.52
0.73
0.47
0.4
#
(mm)
TK13A50D
2SK3934
0.4
0.3
TK15A50D
TK18A50D
TK4A53D
TK5A53D
TK6A53D
TK12A53D
TK4A55DA
TK4A55D
TK5A55D
TK6A55DA
TK8A55DA
TK9A55DA
TK10A55D
TK11A55D
TK12A55D
TK13A55DA
TK14A55D
TK16A55D
2SK3767
0.3
0.27
1.7
5
1.5
6
1.3
12
3.5
4
0.58
2.45
1.88
1.7
11
11
12
16
20
24
25
28
38
40
45
9
5
5.5
7.5
8.5
10
11
12
12.5
14
16
2
1.48
1.07
0.86
0.72
0.63
0.57
0.48
0.37
0.33
4.5
TK3A60DA
2SK3567
TK4A60DA5
TK4A60DA
TK4A60DB
2.5
3.5
3.5
3.5
3.7
2.8
9
2.2
16
11
11
11
#
3.08
2.2
2
#: HSD type
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
34
2010/9ꢀSCE0004K
RDS(ON) Max (Ω)
VGS = 10 V
1.7
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
TK4A60D
TK4A60D5
TK5A60D
2SK3562
2SK3947
TK6A60D
2SK3667
TK8A60DA
2SK3569
2SK4015
TK10A60D
TK10A60D5
TK11A60D
TK12A60D
TK12A60U
2SK3797
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
650
650
650
650
650
650
650
650
650
650
650
450
500
500
500
500
500
500
500
500
500
550
550
550
600
600
600
600
600
600
600
600
600
600
600
600
600
650
650
4
4
35
35
12
12
16
28
28
16
33
20
42
42
25
25
28
38
14
62
62
40
45
17
27
9
#
#
2.38
1.43
1.25
1.4
5
35
6
40
6
40
6
40
1.25
1.0
7.5
7.5
10
10
10
10
11
12
12
13
13
13
15
15
20
2
45
45
1.0
45
0.75
0.86
0.75
1.0
#
#
45
45
45
45
0.65
0.55
0.4
TO-220SIS
45
35
50
0.43
0.5
N-ch Single
2SK4016
#
50
TK13A60D
TK15A60D
TK15A60U
TK20A60U
TK2A65D
TK3A65DA
TK3A65D
TK4A65DA
TK5A65DA
TK5A65D
TK6A65D
TK7A65D
TK8A65D
TK13A65U
TK17A65U
2SK3904
2SK2601
2SK3314
2SK4107
TK15J50D
2SK3905
2SK4108
TK20J50D
2SK3907
40
0.43
0.37
0.30
0.19
3.26
2.51
2.25
1.9
50
(mm)
40
45
30
2.5
3
35
11
11
12
16
16
20
24
25
17
27
62
30
58
48
32
62
62
45
60
60
28
40
45
30
58
14
62
21
17
60
60
30
27
67
55
67
17
27
35
3.5
4.5
5
35
35
1.67
1.43
1.11
0.98
0.84
0.38
0.26
0.26
1.0
40
6
45
7
45
8
45
13
17
19
10
15
15
15
17
20
20
23
23
12
16
19
6
40
45
150
125
150
150
210
150
150
280
150
150
190
250
280
125
150
144
150
170
170
150
150
190
190
400
320
400
170
190
#
#
0.49
0.4
0.4
0.31
0.27
0.27
0.24
0.25
0.57
0.37
0.33
1.25
0.65
0.4
2SK3936
TK12J55D
TK16J55D
TK19J55D
2SK2602
2SK2699
TK12J60U
2SK3903
TK15J60T
TK15J60U
2SK3906
TO-3P(N)
N-ch Single
12
12
14
15
15
20
20
20
20
40
40
50
13
17
0.44
0.30
0.3
(mm)
#
0.33
0.30
0.19
0.19
0.08
0.08
0.065
0.38
0.26
2SK3911
TK20J60T
TK20J60U
TK40J60T
TK40J60U
TK50J60U
TK13J65U
TK17J65U
#: HSD type
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
35
2010/9ꢀSCE0004K
250 V < VDSS ≤ 700 V (Power MOSFETs) (N-ch MOSFETs) (Continued)
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
RDS(ON) Max (Ω)
2SK2916
500
500
600
600
700
14
18
15
40
10
80
90
90
90
80
0.4
0.27
0.4
58
80
80
55
53
TO-3P(N)IS
2SK2917
2SK2953
TK40M60U
2SK3453
2SK1486
N-ch Single
0.08
1.0
(mm)
TO-3P(L)
300
500
500
500
32
25
50
50
200
200
250
250
0.095
0.2
140
150
280
280
2SK1544
2SK3131
2SK3132
N-ch Single
#
0.11
0.095
(mm)
#: HSD type
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
36
2010/9ꢀSCE0004K
700 V < VDSS (Power MOSFETs) (N-ch MOSFETs)
RDS(ON) Max (Ω)
VGS = 10 V
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
PW-Mold
N-ch Single
2SK3301
900
1
20
20
6
(mm)
DP
N-ch Single
2SK2845
900
1
40
9.0
15
(mm)
(mm)
New PW-Mold2
N-ch Single
TK1Q90A
900
1
20
9.0
13
TO-220FL
TO-220SM
2SK2883
2SK2884
2SK1930
800
800
3
5
4
75
100
80
3.6
2.2
3.8
25
34
60
(mm)
(mm)
N-ch Single
1000
TO-220SM
TO-220AB
N-ch Single
2SK3879
800
6.5
80
1.7
35
(mm)
2SK2603
2SK2733
2SK2608
2SK1119
800
900
3
1
3
4
100
60
3.6
9.0
4.3
3.8
25
15
25
60
N-ch Single
900
100
100
1000
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
37
2010/9ꢀSCE0004K
700 V < VDSS (Power MOSFETs) (N-ch MOSFETs) (Continued)
RDS(ON) Max (Ω)
VGS = 10 V
1.7
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V)
ID (A)
PD (W)
2SK4013
800
900
900
900
900
900
900
900
800
800
900
900
900
900
900
900
900
1000
1000
800
800
900
900
6
2.5
3
45
40
45
12
17
26
28
25
45
62
35
68
25
28
45
38
62
70
45
60
65
35
68
58
70
TO-220SIS
2SK3566
2SK3564
2SK3798
2SK3565
2SK3742
2SK4014
2SK3799
2SK3633
2SK2607
2SK2719
2SK3700
2SK4115
2SK3473
2SK3878
2SK2968
2SK4207
2SK1359
2SK2613
2SK3880
2SK2606
2SK2847
2SK3017
6.4
40
4.3
4
40
3.5
N-ch Single
5
45
2.5
5
45
2.5
6
45
2.0
(mm)
8
50
1.3
7
150
150
125
150
150
150
150
150
150
125
150
80
1.7
9
1.2
3
4.3
TO-3P(N)
5
2.5
7
2.0
N-ch Single
9
1.6
9
1.3
10
13
5
1.25
0.95
3.8
(mm)
8
1.7
6.5
8
1.7
TO-3P(N)IS
85
1.2
8
85
1.4
N-ch Single
8.5
90
1.25
2SK1365
1000
7
90
1.8
1.0
120
(mm)
TO-3P(L)
N-ch Single
2SK1489
1000
12
200
110
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
38
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs)
RDS(ON) Max (mΩ)
VDSS VGSS ID
Ciss
(pF)
Internal
Connections
Package
Polarity
Part Number
Internal FET
VGS
VGS
VGS
1.2 V
VGS
=1.5 V
VGS
=4.0 V
VGS
=4.5 V
(V) (V) (A)
=1.8 V
=2.5 V
CST3B
SSM3J46CTB ** −20 ±8
−2
⎯
250
178
133
⎯
103
290
⎯
(4)
P-ch
(mm)
SSM6J212FE
SSM6J53FE
SSM6J206FE
SSM6J205FE
SSM6J26FE
SSM6J23FE
SSM6J25FE
SSM6J207FE
*
−20 ±8 −3.3
−20 ±8 −1.8
−20 ±8 −2.0
−20 ±8 −0.8
−20 ±8 −0.5
−12 ±8 −1.2
−20 ±12 −0.5
−30 ±20 −1.4
−20 ±8 −0.72
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
94
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
94
364
⎯
65.4
204
320
460
980
⎯
49
136
186
306
330
210
430
⎯
⎯
⎯
40.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
300
17
970
568
335
250
250
420
218
137
110
2700
1800
1484
640
568
331
370
160
280
137
86
⎯
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(1)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(1)
(1)
(1)
(1)
(1)
(1)
⎯
ES6
130
234
230
160
260
491
⎯
⎯
⎯
⎯
P-ch
⎯
⎯
⎯
⎯
1.6
0.55
⎯
⎯
⎯
(mm)
⎯
⎯
⎯
P-ch + P-ch SSM6P41FE
*
1040
39
670
29
440
21
⎯
SSM3J132TU ** −12 ±6 −5.4
⎯
⎯
SSM3J130TU *
SSM3J120TU
SSM3J129TU *
SSM3J115TU
SSM3J114TU
SSM3J113TU
SSM3J111TU
SSM3J117TU
SSM3J118TU
SSM3J112TU
SSM6J409TU *
SSM6J412TU *
SSM6J51TU
−20 ±8 −4.4
−20 ±8 −4.0
−20 ±8 −4.6
−20 ±8 −2.2
−20 ±8 −1.8
−20 ±12 −1.7
−20 ±12 −1.0
−30 ±20 −2.0
−30 ±20 −1.4
−30 ±20 −1.1
−20 ±8 −9.5
−20 ±8 −4.0
−12 ±8 −4.0
−12 ±12 −3.0
−20 ±10 −2.5
−30 ±20 −2.5
−30 ±20 −2.0
−30 ±20 −2.1
−20 ±8 −1.2
−20 ±8 −1.5
−20 ±8 −0.8
−20 ±8 −0.5
−20 ±12 −0.5
−30 ±20 −1.4
63.2
140
137
353
526
⎯
41.1
78
31.0
49
⎯
25.8
⎯
46
⎯
38
⎯
UFM
88
62
⎯
⎯
193
321
449 (@2.0 V)
⎯
125
199
249
680
⎯
98
⎯
⎯
⎯
⎯
⎯
⎯
⎯
22.1
42.7
⎯
⎯
64
⎯
149
169
480
225
480
790
⎯
⎯
P-ch
⎯
2.0
0.7
⎯
⎯
(mm)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
72.3
99.6
150
⎯
46.2
67.8
85
30.2
51.4
54
1100
840
1700
1300
800
730
280
120
331
250
250
250
218
120
⎯
⎯
⎯
⎯
⎯
SSM6J21TU
SSM6J50TU
⎯
88
50
⎯
P-ch
UF6
⎯
205 (@2.0 V)
⎯
100
⎯
⎯
⎯
SSM6J401TU
SSM6J402TU
SSM6J410TU *
SSM6P54TU
SSM6P39TU
SSM6P28TU
SSM6P26TU
SSM6P25TU
SSM6P40TU
⎯
145
225
393
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.0
0.7
555
⎯
350
430
460
980
⎯
228
294
306
330
430
⎯
⎯
⎯
213
234
230
260
403
(mm)
⎯
SSM6J205FE x 2
SSM6J26FE x 2
SSM6J25FE x 2
⎯
P-ch x 2
⎯
⎯
⎯
⎯
US6
SSM6J08FU
SSM6J06FU
SSM6J07FU
−20 ±12 −1.3
−20 ±12 −0.65
−30 ±20 −0.8
⎯
⎯
⎯
⎯
⎯
⎯
460 (@2.0 V)
260
700
⎯
180
500
800
⎯
⎯
⎯
370
160
130
⎯
⎯
⎯
(2)
(2)
(2)
⎯
⎯
Pch
2.0
0.9
(mm)
(mm)
SSM6P47NU
SSM6J501NU
−20 ±8
−20 ±8
−4
⎯
⎯
242
48
170
33
125
25
⎯
⎯
95
20
290
⎯
⎯
(6)
(5)
UDFN6
P-ch x 2
P-ch
−10
2300
SSM6J502NU
SSM6J503NU
−20 ±8
−20 ±8
−6
−6
⎯
⎯
63.2
80.4
41.1
56
31
⎯
⎯
25.8
29.8
1800
840
⎯
(5)
(5)
39.7
⎯
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
**: Under development
♦
Internal Connections
(1)
(2)
(3)
(4)
(5)
(6)
Q1
Q1
Q2
Q2
♦
The internal connection diagrams only show the general configurations of the circuits.
39
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
VGS VGS
= 1.5 V = 1.8 V = 2.0 V = 2.5 V = 4 V = 4.5 V = 7 V = 10 V
Qg
(nC)
(typ.)
VDSS VGSS
ID
PD
Ciss
(pF)
Internal
Connections
Package
Polarity
Part Number
VGS
VGS
VGS
VGS
VGS
VGS
(V)
(V)
(A)
(W)
SSM3J307T
SSM3J321T
SSM3J326T
SSM3J312T
SSM3J313T
SSM3J01T
SSM3J02T
SSM3J314T
SSM3J14T
SSM3J306T
SSM3J305T
−20
−20
−30
−12
−20
−30
−30
−30
−30
±8
±8
−5
1.25
1.25
1.25
1.25
0.7
83
137
⎯
⎯
⎯
⎯
⎯
⎯
⎯
56
88
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
40
62
⎯
⎯
31
46
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1170
640
650
550
170
240
150
505
413
19
8.1
9.3
7.5
3.3
⎯
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
−5.2
−5.6
−2.7
−1.6
−1.7
−1.5
−3.5
−2.7
*
±12
±8
115
237
640
⎯
62.5
142
396
600
700
⎯
⎯
45.7
⎯
TSM
91
±8
268
400
500
100
170
⎯
P-ch
±10
±10
±20
±20
1.25
1.25
0.7
⎯
⎯
⎯
⎯
2.9
0.7
⎯
⎯
11.5
⎯
(mm)
1.25
⎯
⎯
⎯
−30
−30
±20
±20
−2.4
−1.7
0.7
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
225
477
⎯
⎯
⎯
⎯
⎯
⎯
280
137
2.5
1.3
(6)
(6)
S-MINI
2.9
P-ch
P-ch
SSM3J325F
*
−20
±8
−2
1.2
311
231
⎯
179
⎯
150
⎯
⎯
270
⎯
(6)
(mm)
SOT-23F
SSM3J328R
SSM3J327R
SSM3J332R
SSM3J334R
*
*
*
*
−20
−20
−30
−30
±8
±8
-6
2
2
2
2
88.4
240
⎯
56
168
145
⎯
⎯
⎯
⎯
⎯
39.7
123
77
⎯
⎯
⎯
⎯
29.8
93
⎯
⎯
⎯
⎯
⎯
⎯
840
290
506
266
12.8
⎯
(6)
(6)
(6)
(6)
−3.9
−6
±12
±20
55
47
7.3
3.7
2.9
0.8
−3.5
⎯
⎯
121.3
86.3
(mm)
(mm)
TPCF8101
TPCF8103
TPCF8105
TPCF8108
TPCF8107
TPCF8301
TPCF8305
TPCF8304
TPC6103
TPC6105
TPC6113
TPC6111
TPC6110
TPC6109-H
TPCP8101
TPCP8102
TPCP8103-H
TPCP8303
TPCP8306
TPCP8305
−12
−20
−20
−20
±8
±8
−6
−2.7
−6
2.5
2.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
144
⎯
⎯
85
300
100
95
⎯
⎯
⎯
⎯
⎯
⎯
160
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
⎯
⎯
160
⎯
40
160
45
37
⎯
160
83
⎯
55
160
85
57
⎯
⎯
41
30
⎯
60
83
42
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
28
110
31
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
28
⎯
⎯
72
⎯
⎯
⎯
⎯
56
59
⎯
⎯
40
⎯
⎯
⎯
⎯
⎯
18
6
(2)
(2)
(2)
(2)
(2)
(3)
(3)
(3)
(1)
(1)
(1)
(1)
(1)
(1)
(4)
(4)
(4)
(3)
(3)
(3)
VS-8
P-ch Single
P-ch Dual
±12
±12
2.5
⎯
17
19
22
6
−7
2.5
26
1320
970
⎯
−30 −25/+20 −6
2.5
⎯
38
−20
−20
−30
−12
−20
−20
−20
±8
±12
±20
±8
−2.7
−4
1.35
1.35
1.35
2.2
300
265
⎯
110
58
680
⎯
9.2
14
20
6
−3.2
−5.5
−2.7
−5
105
35
90
⎯
VS-6
PS-8
±8
2.2
300
⎯
110
55
⎯
±12
±8
2.2
690
⎯
10
10
14
12.6
19
33
19
10
9.2
P-ch Single
−5.5
2.2
80
40
−30 −25/+20 −4.5
2.2
⎯
77
⎯
(mm)
(mm)
−30
−20
−20
−40
−20
−20
−20
±20
±8
−5
−5.6
−7.2
−4.8
−3.8
−4
2.2
⎯
83
⎯
1.68
1.68
1.68
1.48
1.48
1.48
90
30
⎯
P-ch Single
P-ch Dual
±12
±20
±8
⎯
18
⎯
⎯
54
⎯
90
46
⎯
±12
±12
265
⎯
58
680
−6
30
1500 21.5
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
♦
Internal Connections
(1)
(2)
(3)
(4)
(6)
8
7
6
5
8
7
6
5
8
7
6
5
6
5
4
1
2
3
1
2
3
4
1
2
3
4
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
40
2010/9ꢀSCE0004K
RDS(ON) Max (mΩ)
VGS VGS VGS
= 1.8 V = 2.0 V = 2.5 V = 4 V = 4.5 V = 7 V
VDSS
(V)
VGSS
(V)
ID
(A)
PD
(W)
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VGS
VGS
VGS
VGS
= 10 V
TPCC8102
TPCC8103
TPCC8104
−30
−30
−30
±20
±20
−15
−18
−20
26
27
27
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
33.2
25
⎯
⎯
⎯
⎯
⎯
18.9
12
26
38
58
(1)
(1)
(1)
TSON Advance
−25/+20
⎯
12.4
8.8
P-ch Single
TPCC8105
−30
−25/+20
−23
30
⎯
⎯
⎯
⎯
10.4
⎯
7.8
76
(1)
(mm)
TPC8115
TPC8119
TPC8125
TPC8121
TPC8126
TPC8123
TPC8122
TPC8118
TPC8127
TPC8128
TPC8117
TPC8120
TPC8116-H
TPC8110
TPC8124
TPCA8105
TPCA8109
TPCA8128
TPCA8106
TPCA8120
−20
−30
−30
−30
−30
−30
−30
−30
−30
−30
−30
−30
−40
−40
−40
−12
−30
−30
−30
−30
±8
±20
−10
−10
−10
−10
−11
−11
−12
−13
−13
−16
−18
−18
−7.5
−8
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
20
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
92
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
51
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
28
⎯
24
⎯
⎯
16.5
15
⎯
⎯
7.9
⎯
⎯
35
⎯
⎯
⎯
⎯
7.8
⎯
⎯
⎯
24
10
⎯
17
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
13
13
12
10
9
115
40
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
−25/+20
±20
64
⎯
14
42
−25/+20
−25/+20
±20
56
SOP-8
12.5
⎯
⎯
8.9
6.9
⎯
42
68
8
62
P-ch Single
±20
7
65
−25/+20
−25/+20
±20
6.5
5
92
115
130
180
27
(mm)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3.9
3.2
30
25
8
−25/+20
±20
37
±20
⎯
10
48
−25/+20
±8
−12
−6
104
18
33
⎯
9
SOP Advance
−25/+20
−25/+20
±20
−12
−34
−40
−45
−7.5
−40
−40
30
13
56
45
6.7
⎯
3.0
37
4.8
3.7
4
115
130
190
27
45
P-ch Single
−25/+20
±20
45
TPCA8107-H −40
TPCA8108
TPCA8104
30
30
9.5
16
−40
−60
±20
45
⎯
⎯
100
90
(mm)
(mm)
±20
45
PW-Mini
2SJ360
2SJ508
−60
⎯
⎯
−1
−1
1.5
1.5
⎯
⎯
⎯
⎯
⎯
⎯
1200
2500
⎯
⎯
⎯
⎯
730
6.5
6.3
P-ch Single
−100
1900
2SJ537
2SJ507
2SJ509
2SJ378
2SJ669
−50
−60
−100
−60
−60
⎯
⎯
⎯
⎯
⎯
−5
−1
−1
−5
−5
0.9
0.9
0.9
1.3
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
340
1000
2500
280
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
190
700
18
5.6
6.3
22
LSTM
P-ch Single
(mm)
1900
190
TPS
P-ch Single
250
170
15
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
8
7
6
5
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
41
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs) (Continued)
RDS(ON) Max (mΩ)
VGS VGS
= 1.8 V = 2.0 V = 2.5 V = 4 V = 4.5 V = 6 V = 7 V = 10 V
VDSS
(V)
VGSS
(V)
ID
(A)
PD
(W)
Qg (nC)
Internal
Package
Polarity
Part Number
VGS
VGS
VGS
VGS
VGS
VGS
(typ.) Connections
PW-Mold
2SJ439
2SJ668
2SJ338
2SJ567
2SJ610
−16
−60
⎯
⎯
⎯
⎯
⎯
−5
−5
20
20
20
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
280
⎯
⎯
⎯
⎯
200
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
24
15
⎯
10
24
170
P-ch Single
−180
−200
−250
−1
5000
2000
2550
−2.5
−2
⎯
⎯
(mm)
New PW-Mold2
P-ch Single
P-ch Single
2SJ680
−200
⎯
−2.5
20
29
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2000
10
24
(mm)
(mm)
DPAK
TJ15P04M3
−40
±20
15
48
⎯
36
TJ80X04M3L
TJ80X06M3L
2SJ619
−40
−60
+10/−20 −80
+10/−20 −80
150
150
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5.9
⎯
⎯
⎯
⎯
3.9
7.6
210
90
250
250
48
TFP
11.4
P-ch Single
⎯
−100
−100
⎯
⎯
−16
−18
320
120
⎯
(mm)
2SJ620
125
140
TO-220FL
TO-220SM
2SJ312
2SJ401
2SJ402
2SJ412
−60
−60
⎯
⎯
⎯
⎯
−14
−20
−30
−16
40
100
100
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
190
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
120
45
45
90
⎯
⎯
⎯
(mm)
(mm)
P-ch Single
−60
60
38
110
48
−100
320
210
2SJ438
2SJ304
2SJ349
2SJ334
2SJ380
2SJ464
2SJ313
2SJ407
2SJ512
2SJ516
−60
−60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−5
−14
−20
−30
−12
−18
−1
25
40
35
45
35
45
25
30
30
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
280
190
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
190
120
45
22
45
TO-220NIS
−60
90
−60
60
38
110
48
−100
−100
−180
−200
−250
−250
320
120
⎯
210
90
P-ch Single
140
⎯
20
5000
1000
1250
800
−5
⎯
(mm)
−5
⎯
22
−6.5
⎯
29
TO-220SIS
TJ70A06J3
TJ9A10M3
TJ11A10M3
−60
−100
−100
⎯
−70
9
54
19
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
246
47
±20
±20
170
130
P-ch Single
−11
69
TJ20A10M3
−100
⎯
−20
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
90
120
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
42
2010/9ꢀSCE0004K
RDS(ON) Max (mΩ)
VGS VGS
Qg (nC)
(typ.)
Internal
Connections
Package
Polarity
Part Number
VDSS (V) ID (A) PD (W)
VGS
VGS
VGS
VGS
VGS
VGS
= 1.8 V = 2.0 V = 2.5 V = 4 V = 4.5 V =6 V = 7 V = 10 V
TJ100F04M3L −40
TJ150F04M3L −40
−100 250
−150 300
−120 300
−150 300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5.4
4.2
⎯
6.1
⎯
⎯
⎯
⎯
3.6
2.8
8
250
390
258
420
⎯
TO-220SM(W)
P-ch Single
TJ120F06J3
−60
⎯
(mm)
TJ150F06M3L −60
⎯
5.6
830
⎯
TO-3P(N)
2SJ200
2SJ618
−180
−180
−10
−10
120
130
⎯
P-ch Single
370
35
(mm)
TO-3P(N)IS
P-ch Single
2SJ440
2SJ201
−180
−9
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
830
⎯
(mm)
TO-3P(L)
P-ch Single
−200
−12
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
625
⎯
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
43
2010/9ꢀSCE0004K
VDSS ≤ 60 V (Power MOSFETs) (Complementary MOSFETs)
RDS(ON) Max (mΩ)
VGS VGS
VDSS
(V)
VGSS
(V)
ID
(A)
Ciss Qg (nC)
Internal
Connections
Package
Polarity
Part Number
Internal FET
VGS
VGS
VGS
VGS
(pF)
(typ.)
= 1.5 V = 1.8 V = 2.5 V = 4.0 V = 4.5 V = 10 V
265
250
268
250
268
250
268
218
245
218
180
120
9.3
20
−20
20
±10
±8
1.6
−1.5
0.8
247
⎯
190
430
235
460
395
980
395
⎯
139
294
178
306
190
330
190
430
180
430
⎯
119
213
143
234
145
230
145
260
145
260
182
403
3.0 Ω
144
3.0 Ω
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM6N39TU
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(2)
(2)
(3)
(3)
(3)
(4)
SSM6L39TU
SSM6L13TU
SSM6L10TU
SSM6L11TU
+ SSM6P39TU
±12
±8
⎯
SSM3K102TU
+ SSM3J108TU
−20
20
−0.8
0.5
⎯
±12
±8
⎯
SSM6K25FE
+ SSM6J26FE
−20
20
−0.5
0.5
⎯
UF6
±12
±12
±12
±12
±20
±20
±10
±8
⎯
SSM6K25FE
+ SSM6J25FE
−20
30
−0.5
0.5
⎯
⎯
⎯
SSM6K24FE
N-ch + P-ch SSM6L12TU
SSM6L40TU
+ SSM6J25FE
−20
30
−0.5
1.6
⎯
⎯
2.0
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM6N40TU
+ SSM6P40TU
−30
20
−1.4
0.1
⎯
⎯
⎯
(mm)
15 Ω
⎯
⎯
4.0 Ω
180
4.0 Ω
136
10 Ω
240
SSM3K16FU
SSM3J109TU
SSM3K16FU
⎯
SSM6E03TU
335
9.3
−20
20
−1.8
0.1
335
⎯
±10
±8
15 Ω
364
⎯
SSM6E02TU
568
11
−20
20
−1.8
0.05
−1
204
⎯
±10
±12
⎯
SSM3K04FE
⎯
SSM6E01TU
310
−12
⎯
⎯
160
ES6
20
±10
±8
−0.8
600
450
670
330
440
⎯
⎯
240
300
⎯
⎯
90
2.0
SSM6N42FE
SSM6P41FE
(1)
(1)
SSM6L14FE
TPCF8402
N-ch + P-ch
N-ch + P-ch
−20
−0.72
1040
110
1.76
(mm)
(mm)
VS-8
30/−30 ±20/±20 4/−3.2
30/−30 ±20/±20 4/−4
1.35
1.48
⎯
⎯
77/105
⎯
50/72
50/50
⎯
10/14
⎯
(4)
TPCP8404
TPCP8403
⎯
⎯
⎯
⎯
⎯
⎯
80/80
⎯
⎯
4.6/13
16/15
⎯
⎯
(4)
(4)
PS-8
(mm)
40/−40 ±20/±20 4.7/−3.4 1.48
60/105 40/70
N-ch + P-ch
TPCP8405
TPCP8406
30/−30 ±20/±20 6/−4.5
40/−40 ±20/±20 6/−5
1.48
1.48
⎯
⎯
⎯
⎯
⎯
⎯
29/42 26/31.3
36/53.3 32/43.2
⎯
⎯
13.8/24.1
13.7/24.2
⎯
⎯
(4)
(4)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
(3)
(4)
8
7
6
5
Q1
Q1
Q1
Q2
Q2
Q2
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
44
2010/9ꢀSCE0004K
(Load SW)
Package
PS-8
RDS(ON) Max (mΩ)
VGS VGS
= 1.5 V = 1.8 V = 2.0 V = 2.5 V = 4V = 4.5 V = 7V = 10 V
VDSS VGSS
ID
(A)
PD
(W)
Ciss Qg (nC) Internal
Polarity
Part Number
VGS
VGS
VGS
VGS
VGS
VGS
(V)
(V)
(pF)
(typ.) Connections
TPCP8401
−12
±8
−5.5
1.96
⎯
103
⎯
58
⎯
38
⎯
⎯
⎯
20
(1)
Load SW
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(MOSFET + BipTr)
RDS(ON) Max (mΩ)
VGS VGS
= 1.5 V = 1.8 V = 2.0 V = 2.5 V = 4V = 4.5 V = 7V = 10 V
VDSS VGSS
ID
(A)
PD
(W)
Ciss Qg (nC) Internal
Package
PS-8
Polarity
Part Number
VGS
VGS
VGS
VGS
VGS
VGS
(V)
(V)
(pF)
(typ.) Connections
P-ch +
TPCP8J01
−32 ±20
−5.5
2.14
⎯
⎯
⎯
⎯
49
⎯
⎯
35
⎯
34
(2)
BipTr
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
8
7
6
5
8
7
6
5
R1
R2
1
2
3
4
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
45
2010/9ꢀSCE0004K
(MOSFET + SBD)
MOSFET
RDS(ON) Max (mΩ)
SBD
VF Max (V)
Qg Internal
(nC) Connec-
(typ.) tions
Package
UFV
Polarity
Part Number
VDSS VGSS ID
PD
Ciss VR IO
(pF) (V) (A)
VGS = VGS = VGS = VGS = VGS = VGS =
1.8 V 2.0 V 2.5 V 4.0 V 4.5 V 10 V
IF = IF = IF = IF =
1.0 A 0.5 A 0.3 A 0.1 A
(V) (V) (A) (W)
SSM5G10TU
SSM5G09TU
SSM5G02TU
SSM5G04TU
SSM5G11TU
SSM5G01TU
−20 ±8 −1.5
−12 ±8 −1.5
−12 ±12 −1
−12 ±12 −1
−30 ±20 −1.4
−30 ±20 −1
⎯
⎯
⎯
⎯
⎯
⎯
430
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
294
200
240
420
⎯
213
130
160
240
403
800
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
250 20 0.7
550 12 0.5
310 12 0.5
170 12 0.5
120 30 0.7
⎯
⎯
⎯
⎯
⎯
⎯
0.39
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(1)
(1)
(1)
(1)
(1)
(1)
0.43 0.39
0.43 0.39
0.43 0.39
⎯
⎯
2.0
0.7
226
400
0.41
⎯
⎯
86
20 0.5
⎯
0.45
(mm)
UDFN6
SSM6G13NU
TPCF8B01
−20 ±8
2
2
265
⎯
⎯
186
160
⎯
⎯
133
110
⎯
⎯
260 30
1
1
0.59 0.45
⎯
⎯
⎯
⎯
3.6
(5)
(4)
(mm)
(mm)
Pch + SBD
VS-8
PS8
−20 ±8 −2.7 1.35 300
⎯
20
0.49
⎯
6
TPCP8BA1
−20 ±12 −1.3
⎯
⎯
⎯
260
180
⎯
⎯
370 25 0.7
⎯
0.41
0.39
⎯
⎯
⎯
⎯
(2)
2.9
0.8
(mm)
SSM5H10TU
SSM5H05TU
SSM5H08TU
SSM5H03TU
SSM5H11TU
SSM5H16TU
SSM5H01TU
SSM5H07TU
20 ±10 1.6
20 ±12 1.5
20 ±12 1.5
12 ±12 1.4
30 ±20 1.6
30 ±12 1.9
30 ±20 1.4
20 ±20 1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
190
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
139
220
220
⎯
119
160
160
300
182
133
450
540
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
260 20 0.7
125 12 0.5
125 20 0.5
125 12 0.5
180 30 0.7
123 30 0.8
106 20 0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
UFV
0.43 0.39
0.45
0.43 0.39
⎯
⎯
⎯
⎯
⎯
150
122
⎯
⎯
⎯
⎯
0.41
0.45
⎯
⎯
⎯
⎯
2.0
0.7
296
⎯
177
⎯
0.36
⎯
200
300
0.45
(mm)
⎯
⎯
36
12 0.5
0.43 0.39
⎯
UDFN6
Nch + SBD
SSM6H15NU
30 ±10
4
2
124
138
71
⎯
⎯
56
⎯
⎯
280 30
1
0.5 0.41
⎯
⎯
⎯
2.8
(6)
(mm)
SMV
2.9
SSM5H14F
30 ±12
3
⎯
⎯
94
78
⎯
270 45 0.1
⎯
⎯
0.6
⎯
(3)
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
(3)
(4)
(5)
(6)
8
7
6
5
1
2
3
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
♦
The internal connection diagrams only show the general configurations of the circuits.
46
2010/9ꢀSCE0004K
MOSFET
RDS(ON) Max (mΩ)
SBD
VF Max (V)
Internal
Connec-
tions
Qg (nC)
(typ.)
Package
PS8
Polarity
Part Number
VDSS VGSS ID
PD
Ciss VR IO
(pF) (V) (A)
VGS = VGS = VGS = VGS = VGS = VGS =
1.8 V 2.0 V 2.5 V 4.0 V 4.5 V 10 V
IF = IF = IF = IF =
1.0 A 0.5 A 0.3 A 0.1 A
(V) (V) (A) (W)
TPCP8AA1
20 ±12 1.6
⎯
⎯
⎯
⎯
⎯
140
105
⎯
⎯
306 25 0.7
⎯
⎯
0.41
⎯
⎯
⎯
⎯
⎯
(2)
(1)
2.9
0.8
◇
TPCP8A05-H
30 ±20
8
1.68
⎯
⎯
21.9
17.5 1300
⎯
⎯
⎯
16
(mm)
◇
◇
◇
◇
TPC8A05-H
TPC8A06-H
TPC8A03-H
TPC8A04-H
TPC8A07-H
TPCA8A05-H
TPCA8A02-H
TPCA8A01-H
TPCA8A08-H
TPCA8A04-H
30 ±20
30 ±20
30 ±20
30 ±20
10
12
17
18
1.9
1.9
1.9
1.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
17.6
12.9
7
13.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
15
19
(1)
(1)
(1)
(1)
(3)
(1)
(1)
(1)
(1)
(1)
SOP-8
10.1 1400
5.6
3.6
⎯
⎯
⎯
⎯
⎯
⎯
36
N-ch +
SBD
4.5
56
(mm)
30 ±20 6.8/8.5 1.5
28/19 23/15
6.9/8.1
15
◇
◇
◇
◇
◇
30 ±20
30 ±20
30 ±20
30 ±20
30 ±20
20
34
36
38
44
30
45
45
45
45
17.2
6.7
8.5
5.3
4.1
12.9
5.3
SOP Advance
36
5.6
19
4.2 3500
3.2
48
(mm)
⎯
59
◇
: Monolithic
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
(3)
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
Q1
Q2
♦
The internal connection diagrams only show the general configurations of the circuits.
47
2010/9ꢀSCE0004K
(MOSFET + Switching Diodes)
MOSFET
RDS(ON) Max (mΩ)
VGS = VGS = VGS = VGS = VGS = VGS =
Di
Qg Internal
(nC) Connec-
VF Max (V)
Package
UFV
Polarity
Part Number
VDSS VGSS ID PD
(V) (V) (A) (W)
Ciss VR IO trr
(pF) (V) (A) (ns)
IF = IF = IF =
1 mA 10mA 0.1 A
(typ.)
tions
1.5 V 1.8 V 2.5 V 4.0 V 4.5 V 10 V
N-ch +
Switching SSM5H90TU
diodes
20 ±10 2.4
⎯
157
110
80
65
⎯
⎯
400
80 0.1 1.6
⎯
⎯
1.2
⎯
(1)
2.0
0.7
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(MOSFET + Zener Diodes)
MOSFET
Ze-Di
IR (µA)
Qg Internal
(nC) Connec-
(typ.) tions
RDS(ON) Max (mΩ)
VGS = VGS = VGS = VGS = VGS = VGS =
1.8 V 2.0 V 2.5 V 4.0 V 4.5 V 10 V
VZ (V)
@IZ
(mA)
VF Max (V)
Package
PS8
Polarity
Part Number
VDSS VGSS ID
(V) (V) (A) (W)
PD
Ciss
(pF)
@VR IF = IF = IF =
(V) 1.0 A 0.5 A 0.3 A
N-ch +
Zener TPCP8R01
diodes
60 ±20 2.0
⎯
⎯
⎯
⎯
440
⎯
300 140 43
2
0.5 33
⎯
⎯
⎯
⎯
(2)
2.9
0.8
(mm)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦
Internal Connections
(1)
(2)
♦
The internal connection diagrams only show the general configurations of the circuits.
48
2010/9ꢀSCE0004K
Bipolar Power Transistors
Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series)
VCEO
(V)
IC(A)
10/(15)
(18)/20
(25)/30
40/(45)
50/(60)
◎
( )
0.2
0.8
1
2SA1483 2SC3803
(45 V)
(45 V)
§
2SA1426
2SA1204
( ) 2SA1356 2SC3419
(@)
◎
)
2SC2884
2SC2703
2SC3666
(
◎
( )
♣
(
TPC6D02
(15 V)
(&)(△)
)
2SA2070
§
( )
TPC6701
2SC5810
(W)(△)
◎
( )
(M)(△)
HN4B101J
(NPN: 1.2 A)
(M)(V)
TPC6901A
(PNP: 0.7 A)
TPCP8901
(PNP: 0.8 A)
TTA007
(M)(P)
♠
( )
*
*
TTC007
*
*
TPC6604
TPC6504
(△)
◎
( )
(W)(P)
1.2
TPC6D03
) 2SA2065
2SA2069
(&)(△) 2SA1734
TPCP8801
♠
♠
(
♣
(
◎
(
1.5 2SA2058
(
) 2SA966
2SC2236
2SC2883
)
)
♠
(
2SC5784
) 2SA1203
◎
(
◎
(
)
)
2SC5819
TPC6503
(△)
(△)
S3F56
)
§
( )
◎
)
)
◎
)
(△)
(△)
(P)
++
♣
(
♣
♣
( )
◇
( )
2
2SA1160
2SA1430
2SA2066
2SC2500
2SC3670
2SC3225
2SC3673
2SC3964
(
) 2SA1020
2SC2655
2SC3076
§
TPCP8902
(NPN+PNP)
TPC6902
(NPN+PNP) : PNP-1.7A
HN4B102J
(M)(P)
(M)(△)
(M)(V)
( ) 2SA1241
♣
♠
(
(
(@) 2SA1382
2SA2056
(
)
)
♠
(
2SC5755
2SC5785
TPC6501
(
TPC6601
(△)
TPCP8701
(W)(P)
◎
( )
§
( )
TPC6602
(NPN+PNP)
2SA2060
2SA1428
2SA1680
2SA1891
TPCP8504
2SC3668
2SC4408
2SC5028
2SC5692
2SC6033
♣
□
(
(
)
)
)
)
♠
♠
(
♠
(
2.5
3
2SA2061
(
)
TPCP8602
(@) 2SA1761
2SA1869
(P)
◎
♠
($)(P)
♣
)
2SA2059
TPCP8F01
) TPC6603
(
)
2SC5976
TPCP8H02
(
) 2SA1359 2SC3422
2SC4604
2SC4935
2SC5029
2SC5712
TPC6502
TPCP8505
2SC6126
(
($)(P)
(△)
($)(P)
(▲)
□
)
◎
( )
(△)
(P)
◎
)
♣
(
2SC4682
(15 V)
2SA1892
(
TPCP8G01 *
§
( )
2SC4683
(15 V)
(
♠
( )
3.5
2SC5738
• The products shown in bold are also manufactured in offshore fabs.
*: New product
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
++: Being planned
Legend
Package
Ammo Packaging
Other Remarks
Through-Hole Package
Surface-Mount Package
♣
○
○
♠
( ) TSM
(
) LSTM
Available
Available
(%) Darlington
(#) Built-in zener diode
◎
) PW-Mini
§
( ) MSTM
(
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
×
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
(▲) TO-220NIS
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
◇
(
×
×
×
×
×
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
49
2010/9ꢀSCE0004K
Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued)
VCEO
(V)
IC(A)
10/(15)
(18)/20
(25)/30
40/(45)
50/(60)
◎
♠
♠
4
2SC5714
2SC6125
S3F62 ++
(
)
2SC5906
(
)
)
2SC5703
(
)
◎
◎
( )
2SC5713
S3F61
(
)
++
(△)
(△)
(P)
◇
TPCP8601
2SA1242
2SA1357
2SA1431
◇
♠
(
5
(
)
2SC6062
2SA1244
2SA1905
2SA1931
2SA1933
2SA2097
2SC3074
2SC5076
2SC4881
2SC5175
(
)
)
□
(
(▲)
(@)
§
( )
■
(
(
(
)
◇
◇
)
◇
2SC3072
2SC3420
2SC3671
2SC4684
2SC4685
2SC5030
2SC6052
(
)
(@)
§
( )
2SC5886
2SC5886A
TPCP8H01
)
)
◇
(
($)(P)
◇
(
)
(@)
◇
( )
(〒)
□
(
)
S3H32
++
◇
(
)
2SA2183
(60 V)
◇
( )
7
2SC6000
2SC5000
2SC3709A
10
12
2SA1327A
(▲)
2SA1887
(▲)
(▲)
2SA1451A
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
++: Being planned
Legend
Package
Ammo Packaging
Other Remarks
Through-Hole Package
Surface-Mount Package
♣
○
○
♠
( ) TSM
(
) LSTM
Available
Available
(%) Darlington
(#) Built-in zener diode
◎
§
( ) MSTM
(
) PW-Mini
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
×
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
(▲) TO-220NIS
◇
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
×
×
×
×
×
(
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
50
2010/9ꢀSCE0004K
VCEO
(V)
80
100
120
(140)/150
160
IC(A)
♣
( )
(@)
0.05
2SA1145
2SA1360
2SA949
2SC2705
2SC3423
2SC2229
♣
(
)
♣
( )
0.1
2SC2230
0.2
2SC3963
(@)
♣
( )
◎
( )
0.4 2SA817A
2SA1202
0.8
2SC1627A
2SC2882
♣
( )
§
( )
2SA965
2SA1425
TPCP8603
2SC2235
2SC3665
TPCP8507
TPCP8510 *
2SC6061
2SC3421
1
(P)
(P)
♠
(
)
♣
◇
(
□
(
2SA1358
(@)
2SA1013
2SC2383
2SC2983
2SC5154
(
)
)
)
1.5
2SC2073A
2SC3621
(▲) 2SA1225
2SA1408
(@)
§
( )
2SA2219 * 2SC6139 *
2SA2220 * 2SC6140 *
■
(
)
TTA004
*
TTC004
*
(@)
♣
( )
§
( )
2
2SA1315
2SA1429
2SC3328
2SC3669
2SC3474
2SC6079
2SC6124
2SC6075
2SC6087
TPCP8501
(P)
◇
(
)
§
( )
◎
( )
□
( )
2SA2206
2.5
3
□
(
)
§
( )
2SA1926
TTA003
◇
(
)
◇
( )
2SC6076
2SC6077
2SC6078
TTC009 ++
2SC5176
2SC3303
2SC4688
2SC5196
■
(
)
■
(
)
(▲)
■
( )
5
6
2SA1934
◇
(
)
(▼)
(▽)
2SA1939
8
2SC4689
2SC5197
(▼)
(▽)
2SA1940
10
2SC4690
(140 V)
2SC5198
(140 V)
(▼)
(▽)
2SA1941
※
)
12 2SA1452A 2SC3710A
2SA1771
18
(▲)
(▲)
2SA1942
2SC5199
(
TTA0001 * TTC0001 *
TTA0002 * TTC0002 *
(▽)
※
(
)
• The products shown in bold are also manufactured in offshore fabs.
*: New product
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
++: Being planned
Legend
Package
Other Remarks
Through-Hole Package
Surface-Mount Package
Ammo Packaging
○
♣
♠
) TSM
(
) LSTM
Available
(
(%) Darlington
(#) Built-in zener diode
○
◎
) PW-Mini
§
( ) MSTM
Available
(
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
×
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
×
×
×
×
×
(▲) TO-220NIS
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
◇
(
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
51
2010/9ꢀSCE0004K
Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued)
VCEO
(V)
IC(A)
(180)/200
230
300
(370)/400
450
♣
( )
0.05
2SC5122
◎
( )
2SC5307
§
( )
♣
(
0.1
2SC2230A
(180 V)
)
2SA1432
2SA1384
2SC3672
2SC3619
2SC3620
2SC4544
2SC5027
2SC3515
(@)
(@)
(▲)
□
(
)
)
◎
(
0.3
0.5
TPCP8604
2SA1923
2SA1924
2SA1925
2SA1971
2SA1972
(P)
◇
(
)
(@)
□
(
)
◎
(
)
♣
(
)
◇
( )
(@)
◆
0.8
1
2SC6136
(285V/0.7A)
(
)
2SC3075
2SC3425
2SC5208
2SC5458
2SC5549
2SC5550
2SC6042
(375 V)
□
(
)
◇
(
)
§
( )
♣
( )
(@)
§
( )
2SA1837
2SA1932
2SA2182
2SC4793
2SC5174
2SC6060
(▲)
2SC5930
(285 V)
2SC6010
(285 V)
■
(
)
§
( )
(〒)
§
( )
§
( )
2SC6034
(285 V)
2SC6040
(410 V)
◎
TTC005
*
(
)
TPCP8508 ++
(375 V)
(P)
◇
( )
1.5
2
2SC6142
(375 V 1.5 A)
TTC003
TTC13003L *
2SC5075
2SC5548
(370 V)
2SC5548A
*
◇
(
)
♣
( )
□
□
)
(@)
2SA1930
(180 V)
2SA2190
(180 V)
2SC5171
(180 V)
2SC6072
(180 V)
(▲)
(〒)
(
)
2SC5351
2SC5368
(
◇
(
)
◇
( )
◇
( )
2SA2034
3
5
2SC5459
(▲)
(▲)
2SC5172
■
( )
‡
( )
2SC5266A
2SC5355
◇
( )
2SC6138 ++
(375 V)
8
2SC5439
(▲)
10
2SC5352
(▽)
12 2SA2120
15 2SA2121
2SC5948
2SC5949
(▽)
※
※
)
(▽)
(▽)
(
) 2SA1943
2SA1962
2SA1986
2SA1987
2SC5200
2SC5242
2SC5358
2SC5359
(
※
※
(
(
)
)
TTA1943 * TTC5200 *
• The products shown in bold are also manufactured in offshore fabs.
*: New product
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
++: Being planned
Legend
Package
Ammo Packaging
Other Remarks
Through-Hole Package
Surface-Mount Package
♣
○
○
♠
( ) TSM
◎
(
) LSTM
Available
Available
(%) Darlington
(#) Built-in zener diode
§
( ) MSTM
(
) PW-Mini
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
×
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
(▲) TO-220NIS
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
◇
(
×
×
×
×
×
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
52
2010/9ꢀSCE0004K
VCEO
(V)
IC(A)
(550)/600
2SC5201
800
1000/(1200)
1500
0.02
0.05
♣
(
)
2SC5460
2SC5466
2SC6127
(@)
(▲)
2SC4686
2SC4686A
(1200 V)
(▲)
(▲)
◇
(
)
◇
( )
0.5 2SA1937
2SA2142
0.8
◇
)
(
◇
(
2SC3405
2SC5465
2SC5562
2SC5684
)
◇
(
)
□
(
)
)
■
(
◇
( )
1
2SA2184
(550 V)
3
5
2SC5353
2SC5354
2SC3307
(▲)
(▽)
※
)
10
(
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend
Package
Ammo Packaging
Other Remarks
Through-Hole Package
Surface-Mount Package
♣
○
○
♠
( ) TSM
◎
(
) LSTM
Available
Available
(%) Darlington
(#) Built-in zener diode
§
( ) MSTM
(
) PW-Mini
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
×
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
(▲) TO-220NIS
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
◇
(
×
×
×
×
×
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
53
2010/9ꢀSCE0004K
Low-Frequency Power Transistors (2SB/2SD/TTB/TTD Series)
VCEO
(V)
IC(A)
20
30
40
50
60/(65)
♠
◎
0.8
1
2SD2719
(#)(%)(
)
)
2SD2686
(#)(%)(
♣
◇
1.5
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
(%)(
(%)(
)
)
(%)(@)
§
(%)( )
◎
(%)(
(%)(
)
)
□
◇
2
3
2SD1160
(
)
2SD1658
2SD2088
2SD2695
2SD2352
2SD2461
2SD1221
2SD2012
2SD2462
2SD2525
2SD2353
(#)(%)(@)
♣
(#)(%)(
)
)
♣
(#)(%)(
(▲)
□
( )
◇
( )
(▲)
◇
2SB907
2SD1222
(%)(
)
2SB906
2SB1375
□
(
)
)
■
(
2SB1640
(▲)
(♥)
TTB001
TTB002
2SB1667
*
*
◇
(
)
●
(
)
4
2SD2130
2SD2204
(65 V)
(#)(%)(@)
(#)(%)(▲)
5
7
2SD2131
(#)(%)(▲)
2SD1412A
(▲)
• The products shown in bold are also manufactured in offshore fabs.
*: New product
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend
Package
Other Remarks
Through-Hole Package
Surface-Mount Package
Ammo Packaging
○
♣
♠
) TSM
◎
( ) PW-Mini
(
) LSTM
Available
(
(%) Darlington
(#) Built-in zener diode
○
§
( ) MSTM
Available
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
×
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
×
×
×
×
×
(▲) TO-220NIS
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
◇
(
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
54
2010/9ꢀSCE0004K
VCEO
(V)
IC(A)
80
100
120
150/(160)
2SD1220
200
0.9
1.5
2
TPCP8L01(1) (&)(P)
◇
( )
2SB905
2SB1067
2SB908
2SD1509
(%)(@)
♣
(%)( )
□
(%)( )
2SB1457
2SB1617
2SD2206
2SD2480
2SD2536
2SD2257
2SD2092
2SD2129
2SD2241
♣
(#)(%)(
)
3
2SB1495
(%)(▲)
(▲)
(%)(▲)
(%)(▲)
◇
(%)( ) 2SB1481
(▲)
4
5
2SD1223
2SD2406
2SD2079
2SD2526
(%)(▲)
■
(%)(
)
2SB1016A 2SD1407A
(▲)
2SD2604
(#)(%)(▲)
2SB1020
2SD1415A
A
7
(%)(▲)
2SB1018
A
2SD1411A
(▲)
8
2SD2636
(160 V)
(%)(▽)
10
2SD1947A
(▲)
12
15
30
2SD1662
2SD1525
(%)(▽)
※
(%)(
)
(1) NPN + HED (200 V/1 A)
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
VCEO
(V)
IC(A)
250
400
450
6
2SD1410A
(%)(▲)
2SD1409A
(%)(▲)
※
)
15
2SD1314
(%)(
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend
Package
Ammo Packaging
Other Remarks
Through-Hole Package
Surface-Mount Package
♣
○
○
♠
( ) TSM
(
) LSTM
Available
Available
(%) Darlington
(#) Built-in zener diode
◎
§
( ) MSTM
(
) PW-Mini
□
◎
◎
◇
(
(
) TPS
Available only in tape packaging
×
) PW-Mold
●
) TO-220SM
Part number in italic signifies built in Freewheel diode.
2SA****/2SC****: Complementary
(&) 2-in-1 (transistor + diode)
(@) TO-126
Not available
(
■
(
) TPL
Available only in tape packaging (△) VS-6
×
(▲) TO-220NIS
◇
Not available
Not available
Not available
Not available
Not available
Not available
(P) PS-8
(V) SMV
(♥) TFP
($) 2-in-1 (transistor + S-MOS)
×
×
×
×
×
(
) PW-Mold
(W) 2-in-1 (NPN (or PNP) × 2)
(▽) TO-3P(N)
(▼) TO-3P(N)IS
※
(M) 2-in-1 (NPN + PNP)
(
) TO-3P(L)
(〒) TO-220SIS
◆
(
◎
Available only in tape packaging
) TO-92
55
2010/9ꢀSCE0004K
Transistors for Power Amps (Drive Stage)
Part Number
IC
VCEO
(V)
PC
fT
NPN
PNP
(A)
(W)
(MHz)
VCE (V)
IC (A)
Package
Typ. (NPN/PNP)
Tc = 25°C
♣
(
Ta = 25°C)
♣
2SC1627A
2SC2235
2SC3665
2SC6139
2SC5174
2SC6140
2SC3423
2SC3421
TTC004
2SC2983
2SC4793
2SC6060
2SC5171
2SC6072
2SA817A
2SA965
0.4
0.8
0.8
1.5
1
80
0.8
0.9
1
100
120
10
5
0.01
0.1
0.1
0.1
0.1
0.1
0.01
0.1
0.1
0.1
0.1
0.1
0.3
0.3
LSTM
MSTM
TPL
♣
♣
♣
♣
♣
120
120
160
230
160
150
120
160
160
230
230
180
180
2SA1425
2SA2219
2SA1932
2SA2220
2SA1360
2SA1358
TTA004
2SA1225
2SA1837
2SA2182
2SA1930
2SA2190
120
5
*
*
*
*
1
100
10
10
10
5
1.8
1.8
5
100/70
100
1.5
0.05
1
200
TO-126
10
10
15
20
20
20
20
120
5
*
*
1.5
1.5
1
100
10
10
10
10
5/10
5
TO-126
PW-Mold
100
100/70
100/80
200
TO-220NIS
TO-220SIS
TO-220NIS
TO-220SIS
*: New product
1
2
2
200
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Output Stage)
Part Number
IC
VCEO
(V)
PC
fT
NPN
PNP
(A)
(W)
(MHz)
VCE (V)
IC (A)
Package
TO-3P(N)
Typ. (NPN/PNP)
Tc = 25°C
♣
(
Ta = 25°C)
2SC5196
2SC5197
2SC5198
TTC0001
2SC5242
2SC5358
2SC5948
2SC5199
TTC0002
2SC5200
TTC5200
2SC5359
2SC5949
2SA1939
2SA1940
2SA1941
TTA0001
2SA1962
2SA1986
2SA2120
2SA1942
TTA0002
2SA1943
TTA1943
2SA1987
2SA2121
6
80
60
30
30
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
8
120
140
160
230
230
200
160
160
230
230
230
200
80
10
18
15
15
12
12
18
15
15
15
15
100
30
5
*
*
150
30
10
5
130
30
150
30
5
200
30/25
30
5
120
5
*
*
*
*
180
30
10
5
150
30
TO-3P(L)
150
30
5
180
30
5
220
30/25
5
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
56
2010/9ꢀSCE0004K
Transistors for MOS Gate Drivers/Compact Motor Drivers (2-in-1 Transistors)
Absolute Maximum Ratings
VCE(sat)
hFE
Circuit Configuration
(Top View)
Part Number
Polarity
Package
SMV
VCEO
(V)
IC
ICP
(A)
PC (Note 1)
(mW)
VCE
(V)
IC
(V)
IC
IB
(A)
Min
200
Max
500
(A)
Max
(A)
(mA)
5
4
PNP
NPN
PNP
NPN
PNP
NPN
PNP
−30
30
−1.0
1.2
−1.8
2
−5
5
550
550
750
750
400
400
700
−2
2
−0.12
0.12
−0.2
0.2
−0.2
0.17
−0.2
0.14
−0.23
0.17
−0.2
−0.4
0.4
−13
13
HN4B101J
HN4B102J
TPC6901A
200
200
200
200
400
200
500
500
500
500
1000
500
PNP
NPN
−30
30
−8
8
−2
2
−0.6
0.6
−20
20
1
6
2
5
3
4
−50
50
−0.7
1
−5
5
−2
2
−0.1
0.1
−0.3
0.3
−10
6
PNP
NPN
VS-6
PS-8
−30
−1.7
−8
−2
−0.2
−0.6
−20
TPC6902
NPN
PNP
NPN
PNP
NPN
30
−50
50
2
−0.8
1
8
−5
5
700
830
830
890
890
200
200
400
200
200
500
500
2
−2
2
0.2
−0.1
0.1
0.14
−0.2
0.17
−0.2
0.14
0.6
−0.3
0.3
20
−10
6
1
8
2
3
5
7
6
3
TPCP8901
TPCP8902
1000
500
NPN
2
PNP
4
−30
30
−2
2
−8
8
−2
2
−0.2
0.2
−0.6
0.6
−20
20
500
1
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm) and is in single-device operation.
Copper thickness: 35 mm for the TPC6901A and 70 mm for the other transistors
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(1-in-1 Transistors)
Absolute Maximum Ratings
VCE(sat)
(V)
hFE
Part Number
Polarity
Complementary
Package
Remarks
VCEO
(V)
−10
−20
−20
−50
−50
10
IC
(A)
−1.5
−1.5
−2.5
−1
−2
2
PC (Note 1)
(mW)
500
VCE
(V)
−2
−2
−2
−2
−2
2
IC
(A)
IC
(A)
−0.6
−0.5
−1.6
−0.3
−1.0
0.6
IB
(mA)
−20
−17
−53
−10
−33
12
Min
200
200
200
200
200
400
400
400
250
400
400
200
200
200
200
200
400
400
400
400
400
250
Max
500
Max
−0.19
−0.14
−0.19
−0.2
−0.20
0.12
2SA2058
2SA2065
2SA2061
−0.2
−0.15
−0.5
−0.1
−0.3
0.2
2SC5755
2SC5784
2SC5735
500
500
TSM
PNP
625
500
2.9
TTA007
*
*
700
500
TTC007
2SC5692
2SA2058
2SA2065
2SA2061
⎯
*
*
2SA2056
2SC5755
2SC5784
2SC5738
2SC6062
TTC007
625
500
500
1000
1000
1000
400
20
1.5
3.5
5
500
2
0.15
0.5
0.12
0.5
10
20
625
2
0.15
1.6
32
NPN
PNP
NPN
30
800
2
0.5
0.12
1.6
53
(Note 2)
(mm)
50
1
700
1000
1000
500
2
0.1
0.12
0.3
6
TTA007
2SA2056
2SC5785
2SC5819
2SC5714
2SC5810
2SC5712
2SA2066
2SC2069
2SA2059
2SA2070
2SA2060
⎯
2SC5692
2SA2066
2SA2069
2SA2059
2SA2070
2SA2060
2SC5785
2SC5819
2SC5714
2SC5810
2SC5712
2SC6126
50
2.5
−2
−1.5
−3
−1
−2
2
625
2
0.3
0.14
1.0
20
−10
−20
−20
−50
−50
10
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
−2
−2
−2
−2
−2
2
−0.2
−0.15
−0.5
−0.1
−0.3
0.2
−0.19
−0.14
−0.19
−0.20
−0.20
0.12
−0.6
−0.5
−1.6
−0.3
−1.0
0.6
−20
−17
−53
−10
−33
12
500
500
PW-Mini
4.6
500
500
1000
1000
1000
1000
1000
400
20
1.5
4
2
0.15
0.5
0.12
0.5
10
20
2
0.15
1.6
32
(mm)
50
1
2
0.1
0.17
0.3
6
50
3
2
0.3
0.14
1
20
50
3
2
0.3
0.18
1
33
(Note 2)
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , t = 1.6 mm).
*: New product
Note 2: Ultra-high-speed using by the Super Hi-Met process and Low VCE(sat) products.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
57
2010/9ꢀSCE0004K
Transistors for Switching Power Supplies (For AC/DC Converters)
Absolute Maximum Ratings (Ta = 25°C)
Pc (W)
Tc = 25°C
Ta = 25°C)
Part Number
Applications
Package
VCBO (V)
500
VCEO (V)
400
IC (A)
♣
(
2SC3425
0.8
2
10
TO-126
TPS
♣
1.3
2SC5075
2SC5930
2SC6010
2SC6034
2SC5548
2SC5548A
2SC5208
2SC5458
2SC4917
TTC003
♣
1
1
1
1
MSTM
285
370
♣
1
MSTM
♣
1
MSTM
2
15
15
PW-Mold
PW-Mold
TPS
2
♣
1.3
0.8
0.8
2
600
10
10
PW-Mold
TO-126
400
♣
1.1
25
*
1.5
3
PW-Mold
TO-220NIS
TPL
2SC5459
2SC5266A
2SC5172
2SC5352
2SC5351
2SC5368
2SC6042
2SC6040
2SC6142
2SC5562
2SC5353
2SC5354
2SC3307
2SC5439
Switching regulator
♣
1.8
5
5
25
80
TO-220NIS
TO-3P(N)
TPS
10
2
♣
1.3
650
800
450
2
10
TO-126
♣
♣
375
410
375
1
1
1
MSTM
1
MSTM
♣
♣
*
1.5
0.8
3
1.1
1.3
PW-Mold
TPS
25
TO-220NIS
TO-3P(N)
TO-3P(L)
TO-220NIS
*: New product
900
800
5
100
150
30
10
8
1000
450
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
58
2010/9ꢀSCE0004K
Transistors for High-Voltage Power Supplies (For DC/DC Converters)
Absolute Maximum Ratings
hFE
VCE (sat) (V)
IC (A)
Part Number
Package
VCEX (V)
VCEO (V)
IC (A)
Pc (W)
VCE (V)
IC (A)
IB (mA)
Min
120
120
120
180
100
180
180
100
180
100
Max
300
300
300
450
200
450
450
200
450
200
Max
0.14
0.14
0.14
0.5
2SC6061
TPCP8510 *
TPCP8507
2SC6076
2SC6124
2SC6079
2SC6075
2SC6087
2SC6077
2SC6078
150
150
150
160
160
160
160
160
160
160
120
120
120
80
1
1
0.625 (Note 1)
1.1 (Note 1)
1.25 (Note 1)
10 (Note 2)
1 (Note 1)
2
2
2
2
2
2
2
2
2
2
0.1
0.1
0.1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
1
10
10
TSM
PS-8
1
10
PS-8
3
100
100
100
100
100
100
100
PW-Mold
PW-Mini
MSTM
TPS
80
2
0.5
1
80
2
1 (Note 3)
0.5
1
80
2.5
2.5
3
1.3 (Note 3)
1.3 (Note 3)
1.8 (Note 3)
1.8 (Note 3)
0.5
1
80
0.5
1
TPS
80
0.5
1
TPL
80
3
0.5
1
TPL
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm).
*: New product
Note 2: Tc = 25°C
Note 3: Ta = 25°C
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Transistors for Droppers)
Absolute Maximum Ratings
hFE
VCE (sat) (V)
IC (A)
Part Number
Package
Pc (W)
VCEO (V)
IC (A)
VCE (V)
IC (A)
IB (mA)
Tc = 25°C
Min
60
Max
200
300
500
250
250
Max
2SB906
−60
−60
−60
−60
−60
−3
−3
−5
−3
−3
20
25
20
36
25
−5
−5
−2
−5
−5
−0.5
−0.5
−0.5
−0.5
−0.5
−1.7
−1.7
−1
−3
−3
−300
−300
−53
PW-Mold
TO-220SM
TO-220SIS
TFP
2SB1667
2SA2183
TTB001
TTB002
60
200
100
100
−1.6
−3
*
*
−1.7
−1.7
−300
−300
−3
PW-Mold
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
(High-Voltage Transistors)
Absolute Maximum Ratings
Circuit Configuration
(Top View)
Part Number
Package
Remarks
VCEO (V)
IC (A)
Pc (W)
2SA1972
−400
−400
−400
−400
−550
−600
400
−0.5
−0.5
−0.3
−0.5
−1
0.9
1
LSTM
PW-Mini
PS-8
2SA1971
TPCP8604
2SA1925
2SA2184
2SA2142
2SC5122
2SC5307
2SC5201
2SC6127
2SC5460
2SC5466
2SC4686A
2SC5563
1
SMD
1.2
1
TPS
TPCP8604
PW-Mold
PW-Mold
LSTM
SMD only
SMD only
8
1
7
6
5
PNP
4
−0.5
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.02
10
0.9
1
400
PW-Mini
LSTM
600
0.9
10
10
10
10
10
800
PW-Mold
TO-126
2
3
SMD only
800
800
TO-220NIS
TO-220NIS
TO-220NIS
1200
1500
• The circuit configuration diagrams only show the general configurations of the circuits.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
59
2010/9ꢀSCE0004K
Low Saturation Voltage Transistors (Small Surface-Mount Packages for Personal Equipments)
Absolute Maximum Ratings
hFE
VCE (sat) (V)
IC (A) IB (mA)
Part Number
Configuration
Marking
Package
Pc (mW)
Pc (mW)
VCEO (V) IC (A)
ICP (A)
VCE (V) IC (A)
(Note 1)
(Note 1)t = 10 s
Min
200
200
200
200
200
400
400
400
250
200
250
400
400
250
400
120
200
200
200
200
200
200
200
100
400
400
400
180
400
400
250
400
100
400
400
400
400
400
400
200
200
200
200
200
400
Max
500
Max
−0.19
−0.14
−0.19
−0.2
−0.20
0.12
0.12
0.15
0.14
0.2
2SA2058
−10
−20
−20
−50
−50
10
−1.5
−1.5
−2.5
−1
−2
2
−2.5
−2.5
−4
−2
−3.5
3.5
2.5
6
500
500
750
750
−2
−2
−2
−2
−2
2
−0.2
−0.15
−0.5
−0.1
−0.3
0.2
−0.6
−0.5
−1.6
−0.3
−1.0
0.6
−20
−17
−53
−10
−33
12
WM
WK
WE
WH
WF
WL
WJ
2SA2065
2SA2061
TTA007
500
PNP single
625
1000
1100
1000
750
500
*
700
500
2SA2056
2SC5755
2SC5784
2SC5738
2SC5976
2SC5906
2SC6062
TTC007
625
500
TSM
500
1000
1000
1000
400
20
1.5
3.5
3
500
750
2
0.15
0.5
0.5
10
equivalent to
SC-59
20
625
1000
1000
1250
1250
1100
1000
1000
1250
1000
850
2
1.6
32
WD
WW
WP
WR
WG
WB
WX
WA
WN
5K
30
5
625
2
0.3
1.0
33
SOT-23
30
4
7
800
500
2
0.5
1.6
53
NPN single
30
5
10
2
800
400
2
0.5
0.12
0.12
0.14
0.18
0.12
0.14
1.6
53
*
50
1
700
1000
1000
400
2
0.1
0.3
6
2SC5692
2SC6033
2SC5703
2SC6061
HN4B101J
HN4B102J
2SA2066
2SA2069
2SA2059
2SA2070
2SA2060
2SA2206
2SC5785
2SC5713
2SC5819
2SC6125
2SC5714
2SC5810
2SC6126
2SC5712
2SC6124
TPC6501
TPC6502
TPC6503
S3F61
50
2.5
2.5
4
4
625
2
0.3
1.0
20
50
5
625
2
0.3
1.0
33
50
7
800
1000
300
2
0.5
1.6
32
120
±30
±30
−10
−20
−20
−50
−50
−80
10
1
2
625
2
0.1
0.3
10
−1/1.2
−1.8/2
−2
−1.5
−3
−1
−2
−2
2
±5
±8
−3.5
−2.5
−5
−2
−3.5
−4
3.5
7
550
500
±2
±2
−2
−2
−2
−2
−2
−2
2
±0.12 −0.2/0.17
±0.4
±0.6
−0.6
−0.5
−1.6
−0.3
−1.0
−1.0
0.6
±13
±20
−20
−17
−53
−10
−33
−100
12
PNP + NPN
SMV
750
750
500
±0.2
−0.2
−0.15
−0.5
−0.1
−0.3
−0.5
0.2
−0.2/0.14
−0.19
−0.14
−0.19
−0.2
−0.20
−0.5
0.12
5L
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
800
2000
2000
2500
2000
2500
2500
2000
2500
2000
2500
2500
2000
2500
2500
2500
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
⎯
500
4E
500
4D
500
4F
PNP single
500
4C
500
4G
PW-Mini
200
4K
1000
1000
1000
390
3E
equivalent to
SC-62
10
4
2
0.5
0.15
1.6
32
2C
20
1.5
4
2.5
8
2
0.15
0.5
0.12
0.5
10
3D
SOP-89
20
2
0.2
1.6
53
4L
NPN single
20
4
7
1000
1000
400
2
0.5
0.15
1.6
32
2E
50
1
2
2
0.1
0.17
0.3
6
3C
50
3
6
2
0.3
0.18
1.0
33
4M
2A
50
3
5
1000
200
2
0.3
0.14
1
20
80
2
4
2
0.5
0.5
1.0
100
12
4J
10
2
3.5
5
1000
1000
1000
1000
1000
1000
500
2
0.2
0.12
0.6
H2A
H2B
H2C
⎯
50
3
800
2
0.3
0.14
1
20
20
1.5
4
2.5
6
800
2
0.15
0.5
0.12
0.5
10
NPN single
PNP single
++
++
*
10
800
2
0.15
1.6
32
S3F62
20
4
6
800
2
0.5
0.15
1.6
32
⎯
TPC6504
TPC6601
TPC6602
TPC6603
S3F56
TPC6604
TPC6701
TPC6901A
TPC6902
50
1
2
800
2
0.1
0.17
0.3
6
H2D
H3A
H3B
H3C
⎯
VS-6
−50
−10
−20
−20
−50
50
−2
−2
−3
−1.5
−1
1
−3.5
−3.5
−5
−2.5
−2
2
800
−2
−2
−2
−2
−2
2
−0.3
−0.2
−0.5
−0.15
−0.1
0.1
−0.20
−0.19
−0.19
−0.14
−0.23
0.17
−1.0
−0.6
−1.6
−0.5
−0.3
0.3
−33
−20
−53
−17
−10
6
(equivalent to
TSOP-6)
800
500
800
500
++
*
800
500
800
500
H3D
H4A
H6B
H6C
NPN/dual
660 (注2)
400
1000
±50
±30
−0.7/1.0
−1.7/2
±5
±8
500
200/400 500/1000
200 500
±2
±2
±0.1 −0.23/0.17
±0.2 −0.2/0.14
±0.3
±0.6
−10/6
±20
PNP + NPN
700
1000
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm).
*: New product
Note 2: Total loss of dual-device operation
++: Being planned
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
60
2010/9ꢀSCE0004K
Absolute Maximum Ratings
Pc (mW)
hFE
VCE (V) IC (A)
VCE (sat) (V)
IC (A) IB (mA)
Part Number
2SA2097
2SA1241
2SA1244
TTA003
2SC6076
2SC5886
2SC5886A
2SC3076
2SC3474
2SC6052
2SC3074
S3H32
2SC3303
2SC6000
Configuration
PNP single
Marking
Package
Pc (mW)
VCEO (V) IC (A) ICP (A)
(Note 1)
(Note 1)t = 10 s
Min
200
70
Max
500
240
240
200
450
1000
1000
240
⎯
Max
−0.27
−0.5
−0.4
-0.5
0.5
−50
−50
−50
-80
80
−5
−2
−5
-3
3
−10
−3
−8
-5
5
20 (Note 3)
10 (Note 3)
20 (Note 3)
10 (Note 3)
10 (Note 3)
20 (Note 3)
20 (Note 3)
10 (Note 3)
20 (Note 3)
10 (Note 3)
20 (Note 3)
20 (Note 3)
20 (Note 3)
20 (Note 3)
1300
⎯
⎯
−2
−2
−1
-2
2
−0.5
−0.5
−1
−1.6
−1
−3
-1
−53
−50
−150
-100
100
32
A2097
A1241
A1244
A003
⎯
70
*
⎯
100
180
400
400
70
-0.5
0.5
0.5
0.5
0.5
0.4
0.5
1
⎯
1
C6076
C5886
C5886A
C3076
C3474
C6052
C3074
50
5
10
10
3
⎯
2
0.22
0.22
0.5
1.6
1.6
1
PW-Mold
SC-63
50
5
⎯
2
32
50
2
⎯
2
50
80
2
3
⎯
500
180
70
1
0.5
0.3
1.6
3
1
NPN single
20
5
7
⎯
390
240
500
240
400
300
300
300
1000
1000
500
300
500
1000
400
400
2
0.2
53
50
5
8
⎯
1
0.4
150
53
++
50
5
7
⎯
200
70
2
0.5
1
0.2
1.6
3
80
5
8
⎯
1
0.4
150
83
C3303
C6000
8501
8507
8510
8505
8504
8601
8603
8602
8701
8H01
8H02
50
7
10
4
⎯
250
100
120
120
400
400
200
120
200
400
250
250
2
2.5
0.3
0.1
0.1
0.3
0.2
−0.6
−0.1
−0.3
0.3
0.5
0.3
0.18
0.2
2.5
1
TPCP8501
TPCP8507
TPCP8510
TPCP8505
TPCP8504
TPCP8601
TPCP8603
TPCP8602
TPCP8701
TPCP8H01 (Note 2)
TPCP8H02 (Note 2)
100
120
120
50
2
3300
3000
2250
3000
2800
3300
3000
3000
1770
2000
2000
2
33
1
2
1250
2
0.14
0.14
0.14
0.12
−0.19
−0.2
−0.2
0.14
0.13
0.14
0.3
0.3
1
10
NPN single
PNP single
*
1
2
1100
2
10
3
5
1250
2
20
10
2
3.5
−7
−2
−4
5
1200
2
0.6
−2
−0.3
−1
1
12
−20
−120
−50
50
−4
−1
−2.5
3
1300
−2
−2
−2
2
−67
−10
−33
20
1250
1250
NPN/dual
NPN +
940
PS-8
50
5
7
1000
2
1.6
1
53
S-MOS
30
3
5
1000
2
33
PNP +
TPCP8F01 (Note 2)
−20
−3
−5
1000
⎯
200
500
−2
−0.5
−0.19
−1.6
−53
8F01
S-MOS
TPCP8901
TPCP8902
±50
±30
−0.8/1.0
±2
±5
±8
830
890
1480
1670
200/400 500/1000
±2
±2
±0.1
±0.2
−0.2/0.17
−0.2/0.14
±0.3
±0.6
−10/6
±20
8901
8902
PNP + NPN
*
200
2000
200
500
9000
500
NPN
Darlington +
HED
TPCP8L01 (Note 4)
120
0.9
2
900
940
⎯
2
1
1.5
1
1
8L01
TPCP8G01 (Note 5) *
PNP + Pch
−20
−3
−5
1770
−2
−0.5
−0.19
−1.6
−53
8G01
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm).
Note 2: Built-in SBD, VRRM = 30 V, IO = 0.7 A, VF = 0.4 V (MAX)@IF = 0.5 A, IR = 100 µA (MAX)@VR = 10 V
Note 3: Tc = 25°C
*: New product
++: Being planned
Note 4: Built-in HED, VRRM = 200 V, IF(AV) = 1 A
Note 5: Pch MOS VDSS = −20 V, ID = −2 A, RON = 130 mΩ Max
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
61
2010/9ꢀSCE0004K
(Power-Mold Transistors (SC-63/64) )
Absolute Maximum Ratings (Ta = 25°C)
Part Number
Applications
Complementary
VCEO
(V)
−160
160
−50
50
IC
(A)
−1.5
1.5
−2.0
2.0
−5.0
5.0
5.0
−5.0
5.0
−5.0
5.0
5
PC
(W)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
⎯
PC
(W)
15
15
10
10
10
10
10
20
20
20
20
20
10
10
20
20
30
10
15
15
10
15
15
20
20
15
10
15
10
10
15
15
10
20
20
⎯
⎯
20
10
Equivalent Product
Remarks
2SA1225
2SC2983
2SA1241
2SC3076
2SA1242
2SC3072
2SC4684
2SA1244
2SC3074
2SA2097
2SC5886
2SC5886A
2SB905
2SD1220
2SB906
2SD1221
TTB002
TTA003
2SB907
2SC2983
2SA1225
2SC3076
2SA1241
⎯
⎯
Power amplification for driver
Power amplification
2SA1892
2SC5029
2SA1893
2SC3420
2SC5030
2SA1905
2SC5076
⎯
−20
20
2SC3072 ( )
Strobe flash, power amplification
High-current switching
2SA1242 ()
20
⎯
2SC3074
2SA1244
⎯
High β
−50
50
−50
50
High β
High β
⎯
⎯
50
⎯
⎯
High β, VCBO = 120 V
−150
150
−60
60
−1.5
1.5
−3.0
3.0
−3.0
−3.0
−3.0
3.0
3
2SD1220
2SB905
2SD1221
2SB906
⎯
2SA1408
2SC3621
2SB834
2SD880
⎯
TV vertical output, TV audio output (B) class
Low-frequency power amplification
*
*
−60
−80
−40
40
⎯
⎯
1.0
1.0
⎯
2SD1222
2SB907
⎯
⎯
Darlington type
Darlington type
Switching, power amplification
Switching, power amplification
2SD1222
2SC6076
2SB908
⎯
80
⎯
−80
80
−4.0
4.0
2.0
5.0
−2
1.0
1.0
1.0
1.0
1.0
⎯
2SD1223
2SB908
⎯
⎯
Darlington type
Darlington type
2SD1223
2SC3474
2SC3303
2SA2034
2SA2184
2SA2142
2SC3075
2SC5458
2SC5548
2SC5548A
2SC6127
2SC3405
2SC5465
2SC6142
TTC003
⎯
Switching, solenoid drive
Switching
80
⎯
80
⎯
2SC3258
⎯
−400
−550
−600
400
400
370
400
800
800
800
375
400
50
⎯
−1
⎯
⎯
−0.5
0.8
0.8
2
⎯
⎯
⎯
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.0
1.0
⎯
2SC5208
⎯
⎯
⎯
⎯
High-voltage switching
2
⎯
⎯
0.05
0.8
0.8
1.5
1.5
7
⎯
⎯
⎯
⎯
⎯
⎯
*
*
⎯
⎯
⎯
⎯
2SC6000
2SC6052
: Tc = 25°C
⎯
⎯
High-speed switching
20
5
⎯
⎯
*: New product
: hFE classification varies
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
62
2010/9ꢀSCE0004K
(PW-Mini Transistors (SC-62) )
Absolute Maximum Ratings
Electrical Characteristics
VCE (sat)
Equivalent to
TO-92MOD
(TO-92)
Part Number
Marking
Remarks/
Applications
Pc Pc Pc VCEO IC
hFE
fT
(W) (W) (W) (V) (A)
VCE
IC
(V)
IC
IB (MHz) VCE
IC
NPN
PNP
2SA1201
2SA1202
2SA1203
2SA1204
2SA1384
2SA1483
2SA1734
2SA1971
⎯
⎯
2SA2066
⎯
⎯
2SA2069
⎯
⎯
2SA2059
⎯
⎯
2SA2060
⎯
2SA2070
⎯
(Note 1) (Note 2)
Min Max (V) (mA) Max (mA) (mA) Typ. (V) (mA) NPN PNP
NPN
2SC2235
PNP
□
□
2SC2881
2SC2882
2SC2883
2SC2884
2SC3515
2SC3803
⎯
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
0.5 1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
120
80
0.8
0.4
1.5
0.8
0.1
0.2
1.2
80
70
240
240
5
2
100
50
1.0
0.4
500
200
50
120
5
100
10
C
D
2SA965
Audio driver
Low saturation
Audio driver
□
□
□
□
20 120/100 10
E
F
(2SC1627) (2SA817)
2SC2236 2SA966
30
100 320
100 320
2
500
2.0 1500 30
120
120
60
2
500
10
G
H
□
□
R
30
1
100 0.5/0.7 500
20
2
5
P
(2SC2120) (2SA950)
(2SC2551) (2SA1091)
Low saturation
Low saturation
Low saturation
Low saturation
High-voltage
□
□
J
300
45
30
40
150
240
10
1
20
10
0.5
0.3
0.5
20
10
10
2
20
I
□
V
□
W
100
700
10
35
200
100
35
10
⎯
⎯
⎯
⎯
30
120 400
2
100
100
−50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
500
⎯
⎯
LB
⎯
−400 −0.5 140 400
−5 −100 −1.0 −100 −10
−5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
⎯
XN
3E
⎯
AL
⎯
⎯
4E
⎯
⎯
4D
⎯
⎯
4F
⎯
⎯
4G
⎯
4C
⎯
4K
⎯
⎯
2SA1972
⎯
2SD1784
2SC5785
⎯
2SC5713
2SC5819
⎯
2SC6125
2SC5714
⎯
2SC6126
2SC5712
⎯
30
10
1.5 4000
⎯
2
2
150
1.5 1000
1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2SD1140
⎯
Driver (Darlington)
Low saturation
Low saturation
Low saturation
Low saturation
Low saturation
High-speed switching
Low saturation
Low saturation
High-speed switching
Low saturation
Low saturation
Low saturation
Low saturation
Darlington
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
−2
4
400 1000
200 500
400 1000
400 1000
200 0.12 600
12
⎯
1
−10
10
−2 −200 −0.19 −600 −20
⎯
⎯
1
2
2
500 0.15 1600 32
150 0.12 500 10
2C
3D
⎯
⎯
⎯
1
20
1.5
⎯
⎯
1
−20 −1.5 200 500
−2 −150 −0.14 −500 −17
⎯
⎯
1
20
20
4
4
180 390
400 1000
200 500
250 400
400 1000
200 500
400 1000
200 500
2
2
500 0.20 1600 53
500 0.15 1600 32
4L
2E
⎯
⎯
⎯
1
⎯
⎯
1
−20
50
−3
3
−2 −500 −0.19 −1600 −53
⎯
⎯
1
2
2
300 0.18 1000 33
300 0.14 1000 20
4M
2A
⎯
⎯
⎯
1
50
3
⎯
⎯
1
−50
50
−2
1
−2 −300 −0.20 −1000 −33
100 0.17 300
−2 −100 −0.2 −300 −10
⎯
⎯
2SC5810
1
2
6
3C
⎯
⎯
⎯
⎯
1
−50
60±10
80
−1
1
⎯
⎯
2SD2686
2SC6124
TTC005
1
2000
⎯
2
2
5
1000 1.5 1000
1
3H
4J
⎯
⎯
2SA2206
1
2
100 200
100 200
500
100
0.5 1000 100 150/100
1.0 600 75
⎯
⎯
Low saturation
High-voltage
*
⎯
1.1
285
1
⎯
⎯
4N
⎯
⎯
□
Note: The hFE classification that appears instead of the
shown in the Marking column will be one of the following: A, B, C, D, O, R or Y, according to the rank.
*: New product
2
Note 1: The rating applies when the transistor is mounted on a ceramic board (250 mm x 0.8 mm).
2
Note 2: The rating applies when the transistor is mounted on a glass-epoxy board (645 mm x 1.6 mm).
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(TSM Transistors)
Part Number
Absolute Maximum Ratings
hFE
VCE (V)
VCE (sat) (V)
IC (A)
Remarks/
Applications
Marking
Pc (mW)
(Note1) (Note 1) t = 10s
Pc (mW)
NPN
VCEO (V)
IC (A)
ICP (A)
IC (A)
IB (mA)
Min
200
200
200
200
200
400
400
400
Max
500
Max
−0.19
−0.14
−0.19
−0.2
2SA2058
2SA2065
2SA2061
−10
−20
−20
−50
−50
10
−1.5
−1.5
−2.5
−1
−2.5
−2.5
−4
500
500
625
700
625
500
500
625
750
750
−2
−2
−2
−2
−2
2
−0.2
−0.15
−0.5
−0.1
−0.3
0.2
−0.6
−0.5
−1.6
−0.3
−1.0
0.6
−20
−17
−53
−10
−33
12
WM
WK
WE
WH
WF
WL
WJ
Low saturation
Low saturation
Low saturation
Low saturation
Low saturation
500
1000
1100
1000
750
500
TTA007
*
−2
500
2SA2056
2SC5755
2SC5784
2SC5738
−2
−3.5
3.5
2.5
6
500
−0.20
0.12
2
1000
1000
1000
Low saturation
Low saturation
Low saturation
Ultra-high-speed
switching
20
1.5
3.5
750
2
0.15
0.5
0.12
0.5
10
20
1000
2
0.15
1.6
32
WD
2SC5976
2SC5906
2SC6062
30
30
30
3
4
5
5
7
625
800
800
1000
1250
1250
250
200
250
400
500
400
2
2
2
0.3
0.5
0.5
0.14
0.2
1.0
1.6
1.6
33
53
53
WW
WP
Low saturation
voltage
Ultra-high-speed
switching
Low saturation
voltage
Ultra-high-speed
switching
10
0.12
WR
Low saturation
voltage
TTC007
2SC5692
*
50
50
1
2
4
700
625
1100
1000
400
400
1000
1000
2
2
0.1
0.3
0.12
0.14
0.3
1.0
6
WG
WB
Low saturation
Low saturation
Ultra-high-speed
switching
2.5
20
2SC6033
50
2.5
5
625
1000
250
400
2
0.3
0.18
1.0
33
WX
Low saturation
voltage
2SC5703
2SD2719
2SC6061
50
60 ± 10
120
4
0.8
1
7
3
2
800
800
625
1250
1250
1000
400
2000
120
1000
⎯
2
2
2
0.5
1.0
0.1
0.12
1.5
1.6
1
32
1
WA
WV
WN
Low saturation
Darlington
300
0.14
0.3
10
Low saturation
2
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm).
*: New product
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
63
2010/9ꢀSCE0004K
Radio-Frequency Bipolar Small-Signal Transistors
Radio-Frequency Bipolar Transistors
Absolute Maximum Ratings (Ta = 25°C)
TO-92
Equivalent
Product
Remarks
(Mini Transistors)
Part Number
Package
Applications
Marking
VCEO
(V)
30
30
30
20
12
12
10
10
10
5
IC
(mA)
20
PC
(mW)
150
Tj
(°C)
125
125
125
125
125
125
125
125
125
125
125
150
□
Q
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5106
2SC5109
MT3S03A
MT3S04A
MT3S106
FM-band radio-frequency amps
2SC1923
fT = 550 MHz
□
R
AM-band frequency converter, FM-band IF amps
AM-band radio-frequency amps
50
150
2SC380TM
□
F
100
50
150
2SC941TM
VHF-band frequency converters, RF amps
VHF/UHF-band low-noise amps
150
HE
2SC3136
⎯
fT = 1.4 GHz
fT = 7 GHz
fT = 7 GHz
fT = 10 GHz
fT = 6 GHz
fT = 5 GHz
fT = 10 GHz
fT = 7 GHz
fT = 13 GHz
S-MINI
□
MA
30
150
2.9
□
MC
VHF/UHF-band low-noise amps
80
150
⎯
□
MD
VHF/UHF-band low-noise amps
40
150
⎯
□
MF
VHF/UHF-band oscillators
30
150
⎯
□
MG
VHF/UHF-band oscillators
60
150
⎯
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low noise, low-distortion amps
40
150
MR
AE
R2
⎯
5
40
150
⎯
6
80
700 (Note 1)
⎯
□
2SC5087
2SC5087R
2SC5092
MT4S03A
MT4S04A
VHF/UHF-band low-noise amps
12
12
10
5
80
80
40
40
40
150
150
150
150
150
125
125
125
125
125
C
⎯
⎯
⎯
⎯
⎯
fT = 7 GHz
fT = 8 GHz
fT = 10 GHz
fT = 10 GHz
fT = 7 GHz
SMQ
2.9
VHF/UHF-band low-noise amps
ZP
□
D
VHF/UHF-band low-noise amps
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
MR
AE
5
□
2SC4215
2SC4250
2SC5065
2SC5085
2SC5090
2SC5095
2SC5107
2SC5110
2SC5463
MT3S03AU
MT3S04AU
MT3S16U
: Denotes a hFE class.
FM-band radio-frequency amps
30
20
12
12
10
10
10
10
12
5
20
50
30
80
40
15
30
60
60
40
40
60
100
100
100
100
100
100
100
100
100
100
100
100
125
125
125
125
125
125
125
125
125
125
125
125
Q
2SC1923
fT = 550 MHz
fT = 1.4 GHz
fT = 7 GHz
fT = 7 GHz
fT = 10 GHz
fT = 10 GHz
fT = 6 GHz
fT = 5 GHz
fT = 7 GHz
fT = 10 GHz
fT = 7 GHz
fT = 4 GHz
VHF-band frequency converters, RF amps
VHF/UHF-band low-noise amps
HE
2SC3136
⎯
□
MA
□
MC
VHF/UHF-band low-noise amps
⎯
USM
2.0
□
MD
VHF/UHF-band low-noise amps
⎯
□
ME
VHF/UHF-band low-noise amps
⎯
□
MF
VHF/UHF-band oscillators
⎯
□
MG
VHF/UHF-band oscillators
⎯
VHF/UHF-band low-noise amps
MX/MY
MR
⎯
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
UHF-band low-voltage oscillators and amps
⎯
5
AE
⎯
5
T4
⎯
□
Note 1: Mounted on a ceramic board
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
64
2010/9ꢀSCE0004K
Absolute Maximum Ratings (Ta = 25°C)
TO-92
Equivalent
Product
Part Number
Package
Applications
Marking
Remarks
VCEO
(V)
IC
PC
Tj
(mA)
(mW)
(°C)
□
2SC5088
2SC5319
MT4S23U
MT4S03AU
VHF/UHF-band low-noise amps
12
5
80
20
40
40
40
15
100
100
125
125
150
125
150
125
MC
⎯
⎯
⎯
⎯
⎯
⎯
fT = 7 GHz
VHF/UHF-band low-noise amps
MT
MT
MR
MR
AC
U4
fT = 16 GHz
fT = 16 GHz
fT = 10 GHz
fT = 12 GHz
fT = 10 GHz
fT = 16 GHz
USQ
2.0
*
VHF/UHF-band low-noise amps
5
170 (Note 1)
100
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-noise amps
5
MT4S03BU *
5
175 (Note 1)
60
MT4S06U
VHF/UHF-band low-voltage operation, low noise
5
MT4S32U
2SC4915
2SC5066
2SC5086
2SC5091
2SC5096
2SC5108
2SC5111
2SC5322
2SC5464
MT3S03AS
MT3S04AS
MT3S06S
VHF/UHF-band low-noise amps
4.5
30
12
12
10
10
10
10
5
15
20
30
80
40
15
30
60
10
60
40
40
15
67.5
100
100
100
100
100
100
100
100
100
100
100
60
125
125
125
125
125
125
125
125
125
125
125
125
125
⎯
2SC1923
⎯
□
FM-band radio-frequency amps
Q
fT = 550 MHz
fT = 7 GHz
fT = 7 GHz
fT = 10 GHz
fT = 10 GHz
fT = 6 GHz
fT = 5 GHz
VHF/UHF-band low-noise amps
M1/M2
M5/M6
M7/M8
M9/MA
MB/MC
MD/ME
MU
VHF/UHF-band low-noise amps
⎯
VHF/UHF-band low-noise amps
⎯
SSM
VHF/UHF-band low-noise amps
⎯
1.6
VHF/UHF-band oscillators
⎯
VHF/UHF-band oscillators
⎯
VHF/UHF-band low-noise amps
⎯
VHF/UHF-band low-noise amps
12
5
MX/MY
MR
⎯
fT = 7 GHz
fT = 10 GHz
fT = 7 GHz
fT = 10 GHz
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low noise
⎯
5
AE
⎯
5
AC
⎯
VESM
1.2
2SC4250FV
VHF-band frequency converters, RF amps
20
50
150 (Note 1)
125
HE
2SC3136
fT = 1.4 GHz
MT3S03AFS
MT3S04AFS
MT3S05FS
MT3S06FS
MT3S07FS
MT3S11FS
MT3S12FS
MT3S14FS
MT3S16FS
MT3S35FS
MT3S36FS
MT3S37FS
MT3S41FS
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low noise
VHF/UHF-band low-voltage operation, low noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low phase noise
VHF/UHF-band low-voltage operation, low noise
UHF-band low-voltage oscillators and amps
VHF/UHF-band low-noise amps
5
5
40
40
40
15
25
40
40
30
60
24
36
50
80
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
85 (Note 1)
100 (Note 1)
100 (Note 1)
100 (Note 1)
100 (Note 1)
125
125
125
125
125
125
125
125
125
150
150
150
150
00
01
02
03
04
08
09
0H
0K
20
21
22
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
fT = 10 GHz
fT = 7 GHz
fT = 4.5 GHz
fT = 10 GHz
fT = 12 GHz
fT = 6 GHz
fT = 7 GHz
fT = 11 GHz
fT = 4 GHz
fT = 20 GHz
fT = 19 GHz
fT = 19 GHz
fT = 15 GHz
5
5
fSM
5
0.6
6
6
2.5
5
4.5
4.5
4.5
4.5
VHF/UHF-band low-noise amps
VHF/UHF-band low-noise amps
VHF/UHF-band low-noise amps
CST3
0.6
MT3S11CT
VHF/UHF-band low-voltage operation, low phase noise
6
40
105 (Note 1)
125
08
⎯
fT = 6 GHz
UFM
MT3S15TU
MT3S19TU
MT3S20TU
*
*
*
VHF/UHF-band low-noise amps, low-distortion amps
VHF/UHF-band low-noise amps, low-distortion amps
VHF/UHF-band low-noise amps, low-distortion amps
6
6
80
80
80
900 (Note 2)
900 (Note 2)
900 (Note 2)
150
150
150
T3
T6
⎯
⎯
⎯
fT = 11.5 GHz
fT = 11 GHz
fT = 7 GHz
2.0
12
MU
S-MINI
2.9
MT3S19
*
VHF/UHF-band low-noise amps, low-distortion amps
6
80
800 (Note 2)
150
T6
⎯
fT = 12 GHz
Pw-Mini
MT3S20P
MT3S21P
MT3S22P
*
*
*
VHF/UHF-band low-noise amps, low-distortion amps
VHF/UHF-band low-noise amps, low-distortion amps
VHF/UHF-band low-noise amps, low-distortion amps
12
6
80
80
80
1800 (Note 2)
1800 (Note 2)
1800 (Note 2)
150
150
150
MU
T2
⎯
⎯
⎯
fT = 7 GHz
fT = 9 GHz
fT = 8.5 GHz
4.6
6
T5
□
: Denotes a hFE class.
*: New product
Note 1: When mounted on a glass-epoxy PCB board
Note 2: Mounted on a ceramic board
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
65
2010/9ꢀSCE0004K
Dual Radio-Frequency Bipolar Transistor
Absolute Maximum Ratings (Ta = 25°C)
fT
Structure
(Q1/Q2)
♦
Part Number
Package
(Q1/Q2)
(GHz)
Internal Connections
Marking
VCEO (Q1/Q2)
(V)
IC (Q1/Q2)
(mA)
PC
(mW)
MT6L63FS
MT6L64FS
MT6L65FS
MT6L67FS
MT6L68FS
MT6L71FS
MT6L72FS
MT6L75FS
MT6L76FS
MT6L77FS
MT6L78FS
5/6
4.5/6
4.5/6
4.5/6
5/6
25/40
24/40
36/40
36/80
15/40
25/40
36/40
25/80
15/80
40/80
40/40
110 (Note 1)
110 (Note 1)
110 (Note 1)
110 (Note 1)
110 (Note 1)
105 (Note 1)
105 (Note 1)
110 (Note 1)
110 (Note 1)
110 (Note 1)
105 (Note 1)
MT3S07FS/MT3S11FS
MT3S35FS/MT3S11FS
MT3S36FS/MT3S11FS
MT3S36FS/MT3S106FS
MT3S06FS/MT3S11FS
MT3S07FS/MT3S11AFS
MT3S36FS/MT3S11AFS
MT3S07FS/MT3S106FS
MT3S06FS/MT3S106FS
MT3S11FS/MT3S106FS
MT3S11FS/MT3S11AFS
12/6
19.5/6
20/6
18
19
1F
1J
fS6
20/8.5
10/6
1.0
1K
1W
1X
52
53
54
55
5/6
12/6
4.5/6
5/6
19/6
12/8.5
10/8.5
6/8.5
6/6
Q2
Q1
5/6
6/6
6/6
fS6T
1.0
MT6L77FST
6/6
40/80
140
MT3S11FS/MT3S106FS
6/8.5
54
♦
PC: Total power dissipation
The internal connection diagrams only show the general configurations of the circuits.
Note 1: When mounted on a glass-epoxy PCB board
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
SiGe HBTs
Absolute Maximum Ratings (Ta = 25°C)
Part Number
Package
Applications
Marking
Remarks
VCEO
IC
(mA)
15
PC
(mW)
45
Tj
(V)
3
(°C)
150
150
150
150
MT4S100U
MT4S101U
MT4S102U
MT4S104U
VHF/UHF-band low-noise amps
P6
P7
P8
P1
fT = 22 GHz
fT = 21 GHz
fT = 24 GHz
fT = 23 GHz
fT = 30 GHz
USQ
VHF/UHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
3
10
30
2.0
3
20
60
3
10
30
MT4S200U
MT4S300U
MT4S301U
MT4S100T
MT4S101T
MT4S102T
MT4S104T
MT4S200T
MT4S300T
MT4S301T
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
VHF/UHF-band low-noise amps
VHF/UHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
UHF/SHF-band low-noise amps
4
4
4
3
3
3
3
4
4
4
35
50
35
15
10
20
10
35
50
35
140 (Note 1)
150
150
150
150
150
150
150
150
150
150
P2
P3
P4
P6
P7
P8
P1
P2
P3
P4
*
*
100
100
45
fT = 26.5 GHz, high ESD immunity
fT = 27.5 GHz, high ESD immunity
fT = 23 GHz
TESQ
30
fT = 23 GHz
1.2
60
fT = 25 GHz
30
fT = 25 GHz
100
100
100
fT = 30 GHz
*
*
fT = 26.5 GHz, high ESD immunity
fT = 27.5 GHz, high ESD immunity
fSM
0.6
MT3S106FS
VHF/UHF-band low-voltage operation, low-noise amps
6
80
100 (Note 1)
150
41
fT = 8.5 GHz
S-MINI
MT3S111
MT3S113
*
*
2.9
VHF/UHF-band low-noise, low-distortion amps
VHF/UHF-band low-noise, low-distortion amps
6
5.3
6
100
100
100
100
100
700 (Note 2)
800 (Note 2)
800 (Note 2)
900 (Note 2)
1000 (Note 2)
150
150
150
150
150
R5
R7
R5
R7
R5
fT = 11.5 GHz
fT = 12.5 GHz
fT = 10 GHz
fT = 11.2 GHz
fT = 8 GHz
UFM
MT3S111TU *
MT3S113TU *
2.0
VHF/UHF-band low-noise, low-distortion amps
VHF/UHF-band low-noise, low-distortion amps
5.3
6
Pw-Mini
4.6
MT3S111P
MT3S113P
*
*
5.3
100
1600 (Note 2)
150
R7
fT = 7.7 GHz
Note 1: When mounted on a glass-epoxy PCB board
Note 2: Mounted on a ceramic board
*: New product
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
66
2010/9ꢀSCE0004K
Radio-Frequency Small-Signal FETs
Radio-Frequency MOSFETs
Electrical Characteristics (Ta = 25°C)
Equivalent
Product
(Leaded Type)
Part Number
3SK291
Package
Applications
Marking
UF
VDS
(V)
ID
PD
IDSS
|Yfs|
(mS) Typ.
(mA)
(mW)
(mA)
SMQ
2.9
UHF-band radio-frequency amps
12.5
30
30
150
150
0 to 0.1
0 to 0.1
26
⎯
⎯
3SK292
VHF/UHF-band radio-frequency amps
12.5
23.5
UV
USQ
3SK293
3SK294
UHF-band radio-frequency amps
12.5
12.5
30
30
100
100
0 to 0.1
0 to 0.1
26
UF
⎯
⎯
2.0
VHF/UHF-band radio-frequency amps
23.5
UV
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Radio-Frequency Junction FETs
Electrical Characteristics (Ta = 25°C)
Equivalent
Product
Part Number
Package
Applications
Marking
VGDO
IG
PD
IDSS
|Yfs|
(Leaded Type)
VGDS ◊ (V)
(mA)
(mW)
(mA)
(mS) Typ.
S-MINI
□
2SK210
FM-band radio-frequency amps
AM-band radio-frequency amps
−18
10
10
100
150
3.0 to 24
6 to 32
7
Y
⎯
2.9
□
RB
◊
◊
2SK711
−20
−20
25
2SK709
USM
2.0
□
RB
2SK1875
AM-band radio-frequency amps
10
100
6 to 32
25
2SK709
□
: Denotes a IDSS class.
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
67
2010/9ꢀSCE0004K
Radio-Frequency Power MOSFETs
Radio-Frequency Power MOSFETs
Absolute Maximum Ratings (Tc = 25°C)
Po (W)
Test Conditions
Part Number
Package
Applications
VDSS
(V)
PD
(W)
ID
(A)
Min
VDD
(V)
f
Pi
(W)
(MHz)
RFM08U9X
2SK3075
2SK3074
RFM12U7X
RFM01U7P
2SK3476
2SK3475
RFM04U6P
2SK4037
*
PW-X
PW-X
36
30
30
20
20
20
20
16
12
20
20
3
5
5
1
4
1
3
1
2
3
7.5
7.5
9.6
9.6
9.6
7.2
7.2
7.2
7.2
6.0
6.0
520
520
520
520
520
520
520
470
470
0.5
0.5
PW-MINI
PW-X
0.63
11.5
1.0
0.02
1.0
UHF/VHF
*
*
20
3
Professional radios
PW-MINI
PW-X
0.1
20
3
7.0
0.5
PW-MINI
PW-MINI
PW-X
0.63
3.5
0.02
0.2
*
7
GMRS
20
3.55
0.3
UHF/VHF
2SK2854
PW-MINI
10
0.5
0.5
0.2
6.0
849
0.02
Professional radios
2SK3079A
2SK3756
2SK3078A
2SK3077
RFM03U3CT
RFM00U7U
PW-X
PW-MINI
PW-MINI
USQ
10
7.5
10
10
16
20
20
3
3
2.24
1.26
0.63
0.032
2.3
4.5
4.5
4.5
4.8
3.6
7.2
470
470
470
915
520
520
0.1
0.1
FRS/GMRS
1
3
0.5
0.1
2.5
0.1
0.1
Driver
GMRS
Driver
0.25
7
0.001
0.1
*
*
RF-CST3
USQ
0.25
0.1
0.01
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
68
2010/9ꢀSCE0004K
IGBTs
IGBTs (Discrete IGBTs)
Absolute Maximum Ratings
VCE(sat) Typ.
(Ta = 25°C)
tf Typ.
Package
@Ta = 25°C
Circuit
Configuration
(Note)
@Ta = 25°C
Ic
Pc
Part Number
Applications
Features
Remarks
VCES
(V)
Ta = Tc =
25°C 25°C
DC Pulse
@IC
(A)
@VGE
Test
Type
(A)
(A)
(V)
2.0
(V)
(µs) Conditions
(W)
(W)
Isolation,
(2)
GT10J321
10
20
⎯
29
TO-220NIS
10
15
0.03
Through-hole
Isolation,
(2)
(2)
(2)
(1)
(1)
GT15J321
GT15J331
GT20J321
GT30J121
GT30J126
15
15
20
30
30
30
30
40
60
60
⎯
⎯
⎯
⎯
⎯
30
70
TO-220NIS
TO-220SM
TO-220NIS
TO-3P(N)
1.9
1.75
2.0
15
15
20
30
30
15
15
15
15
15
0.03
0.10
0.04
0.05
0.05
Through-hole
SMD
Low VCE (sat)
Isolation,
Power supplies
High-speed
45
600
Through-hole
Through-hole
Isolation,
(and UPS/PFC/Motor) switching
170
90
2.0
TO-3P(N)IS
TO-3P(N)
1.95
Through-hole
Through-hole
(2)
(1)
(2)
(1)
(2)
(1)
(2)
(1)
(2)
GT30J324
GT50J121
GT50J325
GT10Q101
GT10Q301
GT15Q102
GT15Q301
GT25Q102
GT25Q301
30
50
50
10
10
15
15
25
25
60
100
100
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
170
240
240
140
140
170
170
200
200
2.0
2.0
2.0
2.1
2.1
2.1
2.1
2.1
2.1
30
50
50
10
10
15
15
25
25
15
15
15
15
15
15
15
15
15
0.05
0.05
0.05
0.16
0.16
0.16
0.16
TO-3P(LH) Through-hole
TO-3P(LH) Through-hole
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
Through-hole
Through-hole
Through-hole
Through-hole
20
High
30
1200
ruggedness
30
Inductive load
0.16
50
TO-3P(LH) Through-hole
TO-3P(LH) Through-hole
50
0.16
Isolation,
TO-220NIS
(2)
GT5J301
5
10
⎯
28
2.1
5
15
0.15
Through-hole
SMD
(2)
(2)
GT5J311
5
10
20
⎯
⎯
45
90
TO-220SM
TO-3P(N)
2.1
2.1
5
15
15
0.15
0.15
Through-hole
GT10J301
10
10
Isolation,
Through-hole
Motor drives
(2)
(2)
(2)
GT10J303
GT10J312
GT15J301
10
10
15
20
20
30
⎯
⎯
⎯
30
60
35
TO-220NIS
TO-220SM
TO-220NIS
2.1
2.1
2.1
10
10
15
15
15
15
0.15
0.15
0.15
(and UPS/PFC)
SMD
Isolation,
Through-hole
High
ruggedness
SMD
(2)
(1)
(2)
(1)
(2)
(1)
(2)
GT15J311
GT20J101
GT20J301
GT30J101
GT30J301
GT50J102
GT50J301
15
20
20
30
30
50
50
30
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
TO-220SM
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
2.1
2.1
2.1
2.1
2.1
2.1
2.1
15
20
20
30
30
50
50
15
15
15
15
15
15
15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
130
130
155
155
200
200
40
60
60
100
100
600
Low VCE(sat)
Power factor
Partial switching
converter
Isolation,
Through-hole
(1)
GT30J122
frequency
30
100
⎯
75
TO-3P(N)IS
2.1
50
15
0.25
correction
switching
Isolation,
Through-hole
(2)
(2)
GT30J322
GT35J321
30
37
100
100
⎯
⎯
75
75
TO-3P(N)IS
TO-3P(N)IS
2.1
1.9
50
50
15
15
0.25
0.19
Isolation,
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
Through-hole
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
GT40J321
GT40J322
GT50J322
GT50J322H
GT50J327
GT50J328
GT60J321
GT60J323
GT60J323H
40
40
50
50
50
50
60
60
60
100
100
100
100
100
120
120
120
120
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
120
120
130
130
140
140
200
170
170
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
2.0
1.7
2.1
2.2
1.9
2.0
1.55
1.9
2.1
40
40
50
50
50
50
60
60
60
15
15
15
15
15
15
15
15
15
0.11
Fast switching
Fast switching
IH rice cookers,
IH cooktops,
0.20 Resistive load
Microwave ovens,
Induction heating
equipment
Current
0.25
0.11
0.19
0.1
resonance
AC 200 V
Fast switching
Low VCE (sat)
0.30
0.16
0.12
Fast switching
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Note)
(1)
Typical
(2)
Built-in FRD
Collector
(3)
Built-in Zener diode
Collector
Collector
Gate
Gate
Gate
Emitter
Emitter
Emitter
69
2010/9ꢀSCE0004K
IGBT (Discrete IGBT) (Continued)
Absolute Maximum Ratings (Ta = 25°C)
tf Typ.
VCE(sat) Typ.
Package
Circuit
Configuration
(Note)
@Ta = 25°C
@Ta = 25°C
Ic
Pc
Part Number
Applications
Features
Remarks
VCES
(V)
DC
(A)
Pulse Ta = 25°C Tc = 25°C
@IC
(A)
@VGE
Test
Type
(A)
(W)
(W)
(V)
1.8
(V)
(µs) Conditions
Isolation,
(2)
For small power
GT15M321
15
30
⎯
55
TO-3P(N)IS
15
15
0.20
Through-hole
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
GT50M322
GT60M323
GT60M303
GT60M324
GT50N321
GT50N322A
GT50N324
GT60N321
GT60N322
GT40Q321
GT40T321
50
60
60
60
50
50
50
60
57
42
40
120
120
120
120
120
120
120
120
120
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
156
200
170
254
156
156
150
170
200
170
230
TO-3P(N) Through-hole
TO-3P(LH) Through-hole
TO-3P(LH) Through-hole
TO-3P(N) Through-hole
TO-3P(N) Through-hole
TO-3P(N) Through-hole
TO-3P(N) Through-hole
TO-3P(LH) Through-hole
TO-3P(LH) Through-hole
TO-3P(N) Through-hole
TO-3P(N) Through-hole
2.1
2.3
2.1
1.7
2.5
2.2
1.9
2.3
2.4
2.8
2.15
60
60
60
60
60
60
60
60
60
40
40
15
15
15
15
15
15
15
15
15
15
15
0.25
0.09
0.25
0.11
0.25
0.1
900
Fast switching
IH rice cookers,
IH cooktops,
Microwave ovens,
Induction heating
equipment AC100 V
Tj = 175°C
*
Voltage
Fast switching
6th generation
resonance
1000
0.11
0.25
0.11
0.41
0.24
Fast switching
IH rice cookers,
IH cooktops,
1200
1500
Tj = 175°C
*
*
80
Microwave ovens,
Induction heating
equipment AC200 V
(2)
(3)
High VCES
GT40T302
40
80
⎯
200
TO-3P(LH) Through-hole
3.7
3.0
40
15
0.23
1.5
ICP = 130 A
@VGE = 2.5V
gate drive
Digital still cameras,
cell phone
GT5G133
*
⎯
130
0.83
⎯
TSON-8
SOP-8
SMD
SMD
SMD
SMD
SMD
SMD
130
2.5
ICP = 150 A
@VGE = 4.0V
gate drive
(3)
(3)
(3)
(3)
(3)
GT8G132
GT8G133
GT8G134
GT8G136
GT10G131
⎯
⎯
⎯
⎯
⎯
150
150
150
150
200
1.1
1.1
1.1
1.1
1.9
⎯
⎯
⎯
⎯
⎯
2.3
2.9
3.4
3.5
2.3
150
150
150
150
200
4.0
4.0
2.5
3.0
4.0
1.6
ICP = 150 A
@VGE = 4.0V
gate drive
TSSOP-8
TSSOP-8
TSSOP-8
SOP-8
1.7
Strobe flash
(dimming
control)
400
Digital still cameras,
single lens reflex
cameras
ICP = 150 A
@VGE = 2.5V
gate drive
Resistive
1.2
1.6
1.8
load
ICP = 150 A
@VGE = 3.0V
gate drive
ICP = 200 A
@VGE = 4.0V
gate drive
Isolation,
Through-hole
Isolation,
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
5th generation
6th generation
6th generation
6th generation
5th generation
5th generation
5th generation
5th generation
GT30F122
GT30F123
GT30F124
GT30F125
GT45F122
GT45F123
GT45F124
GT45F125
GT45F127
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
120
200
200
200
200
200
200
200
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
25
25
25
25
25
26
29
29
26
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2.4
2.1
2.3
1.9
2.2
120
120
120
120
120
15
15
15
15
15
15
15
15
15
0.21
0.15
0.15
0.15
0.2
300
Through-hole
Isolation,
*
*
Through-hole
Isolation,
PDP sustain, 330
energy
Through-hole
Isolation,
PDP-TV
recovery and
separation
circuits
Through-hole
Isolation,
1.95 120
1.7 120
1.45 120
1.6 120
0.2
Through-hole
Isolation,
300
0.22
0.4
Through-hole
Isolation,
Through-hole
Isolation,
0.27
6th generation
Through-hole
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
*: New product
Note)
(1)
Typical
Collector
(2)
Built-in FRD
Collector
(3)
Built-in Zener diode
Collector r
Gate
Gate
Gate
Emitte
Emitte
Emitte
70
2010/9ꢀSCE0004K
Absolute Maximum Ratings (Ta = 25°C)
tf Typ.
VCE(sat) Typ.
Package
Circuit
Configuration
(Note)
@Ta = 25°C
@Ta = 25°C
Ic
Pc
Part Number
Applications
Features
Remarks
VCES
(V)
DC
(A)
Pulse Ta = 25°C Tc = 25°C
@IC
(A)
@VGE
Test
Type
(A)
(W)
(W)
(V)
(V)
(µs) Conditions
Isolation,
Through-hole
SMD
(1)
(1)
(1)
6th generation
5th generation
5th generation
GT45F128
GT45F131
GT30G122
*
330
300
400
⎯
⎯
⎯
200
200
120
⎯
⎯
⎯
26
160
25
TO-220SIS
TO-220SM
TO-220SIS
1.45 120
15
15
15
0.27
0.22
0.25
1.7
2.6
120
120
Isolation,
Through-hole
Isolation,
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
6th generation
6th generation
6th generation
5th generation
5th generation
5th generation
5th generation
6th generation
GT30G123
GT30G124
GT30G125
GT45G122
GT45G123
GT45G124
GT45G125
GT45G127
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
200
200
200
200
200
200
200
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
25
25
25
25
26
29
29
26
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2.2
2.5
2.1
2.4
2.1
1.9
1.6
1.7
120
120
120
120
120
120
120
120
15
15
15
15
15
15
15
15
0.20
0.23
0.16
Through-hole
Isolation,
430
*
*
Through-hole
Isolation,
Through-hole
Isolation,
PDP sustain,
energy
0.28
Resistive
Through-hole
Isolation,
PDP-TV
recovery and
separation
circuits
load
0.23
Through-hole
Isolation,
400
430
0.27
0.5
Through-hole
Isolation,
Through-hole
Isolation,
0.37
Through-hole
Isolation,
(1)
(1)
(1)
6th generation
5th generation
5th generation
*: New product
GT45G128
GT45G131
GT30J124
*
⎯
⎯
⎯
200
200
200
⎯
⎯
⎯
26
160
26
TO-220SIS
TO-220SM
TO-220SIS
1.55 120
15
15
15
0.41
0.27
0.25
Through-hole
SMD
400
600
1.9
2.4
120
120
Isolation,
Through-hole
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Note)
(1)
Typical
(2)
Built-in FRD
Collector
(3)
Built-in Zener diode
Collector
Collector
Gate
Gate
Gate
Emitter
Emitter
Emitter
71
2010/9ꢀSCE0004K
Phototransistors (for Optical Sensors)
Electrical/Optical Characteristics (Ta = 25°C)
Peak
Dark Current
Part Number
with Rank
Light Current
Half-Value
Angle
( ° )
Part Number
Package
Applications
Sensitive
Impermeable
to Visible Light
Wavelength
(nm)
Min
(µA)
Max
(µA)
Max
(µA)
2
E (mW/cm )
VCE (V)
30
⎯
100
100
200
400
100
30
⎯
300
600
1200
⎯
TPS601A(A,F)
TPS601A(B,F)
TPS601A(C,F)
⎯
TPS601A(F)
TO-18CAN with lens
0.1
0.2
800
±10
⎯
TPS610(F)
TPS611(F)
φ5
φ5
0.1
0.1
0.1
0.1
24
24
800
900
±8
±8
⎯
●
⎯
⎯
⎯
20
150
85
TPS615(B,F)
TPS615(C,F)
TPS615(BC,F)
⎯
34
TPS615(F)
φ3
0.1
0.1
24
800
±30
⎯
Optoelectronic
switches
60
150
150
75
34
10
TPS616(B,F)
TPS616(C,F)
TPS616(BC,F)
⎯
17
42.5
75
●
●
TPS616(F)
TPS622(F)
φ3
0.1
0.1
0.1
0.1
24
24
900
870
±30
±15
30
17
75
27
⎯
Small side-view package
TPS622(A,F)
TPS622(B,F)
27
80
55
165
Note: E = radiant incidence; VCE = collector-emitter voltage
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
72
2010/9ꢀSCE0004K
(As of June 01, 2010)
OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America
Toshiba Electronics Europe GmbH
Toshiba Electronics Asia, Ltd.
Electronic Components, Inc.
• Irvine, Headquarters
Tel: (949)623-2900 Fax: (949)474-1330
• Düsseldorf Head Office
• Hong Kong Head Office
Tel: (0211)5296-0 Fax: (0211)5296-400
Tel: 2375-6111 Fax: 2375-0969
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Tel: (028)8675-1773 Fax: (028)8675-1065
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Tel: (532)8579-3328 Fax: (532)8579-3329
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Tel: (0755)2399-6897 Fax: (0755)2399-5573
• Houston
Tel: (713)466-6277
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Tel: (8)704-0900 Fax: (8)80-8459
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• Shanghai Head Office
Tel: (021)6841-0666 Fax: (021)6841-5002
• Marlborough
Tel: (508)481-0034 Fax: (508)481-8828
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Tel: (6278)5252 Fax: (6271)5155
• Parsippany
Tel: (973)541-4715 Fax: (973)541-4716
• Hangzhou Office
Tel: (0571)8717-5004 Fax: (0571)8717-5013
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Tel: (02)501-1635 Fax: (02)501-1638
• San Jose
Tel: (408)526-2400 Fax: (408)526-2410
• Nanjing Office
Tel: (025)8689-0070 Fax: (025)8689-0125
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• Wixom (Detroit)
Tel: (248)347-2607 Fax: (248)347-2602
• Kuala Lumpur Head Office
Tel: (03)5631-6311 Fax: (03)5631-6307
Toshiba Electronics (Dalian) Co., Ltd.
Tel: (0411)8368-6882 Fax: (0411)8369-0822
Toshiba Electronics do Brasil Ltda.
Tel: (011)2539-6681 Fax: (011)2539-6675
• Penang Office
Tel: (04)226-8523 Fax: (04)226-8515
Tsurong Xiamen Xiangyu Trading Co., Ltd.
Tel: (0592)226-1398 Fax: (0592)226-1399
Toshiba India Private Ltd.
Tel: (011)2331-8422 Fax: (011)2371-4603
Toshiba Electronics Korea Corporation
• Seoul Head Office
Tel: (02)3484-4334 Fax: (02)3484-4302
• Daegu Office
Tel: (053)428-7610 Fax: (053)428-7617
Toshiba Electronics Taiwan Corporation
• Taipei Head Office
Tel: (02)2508-9988 Fax: (02)2508-9999
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware,
software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is
permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and
for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could
cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or
incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without
limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor
Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the
applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c)
validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics
appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily
high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact
(“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment
used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and
escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual
property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by
estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM
EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR
INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA,
AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING
WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Product may include products using GaAs (Gallium Arsenide). GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do
not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use,
stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology
may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related
software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Product may include products subject to foreign exchange and foreign trade control laws.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all
applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for
damages or losses occurring as a result of noncompliance with applicable laws and regulations.
In addition to the above, the following are applicable only to development tools.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Use the Product in a way which minimizes risk and avoid situations
in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. For using the Product, customers
must also refer to and comply with the latest versions of all relevant TOSHIBA information, including without limitation, this document, the instruction manual, the specifications, the
data sheets for Product.
Product is provided solely for the purpose of performing the functional evaluation of a semiconductor product. Please do not use Product for any other purpose, including without
limitation, evaluation in high or low temperature or humidity, and verification of reliability.
Do not incorporate Product into your products or system. Products are for your own use and not for sale, lease or other transfer.
2010
Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng
73
2010/9ꢀSCE0004K
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