MT6L57AT [TOSHIBA]
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS; VHF 〜 UHF波段低噪声放大器的应用
| 型号： | MT6L57AT |
| 厂家： | 
TOSHIBA |
| 描述： | VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT6L57AT
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L57AT
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
•
Two devices are built in to the super-thin and ultra super mini (6
pins) package: TU6
Mounted Devices
Q1: SSM (TESM)
Q2: SSM (TESM)
MT3S06S
MT3S04AS
Three-pins (SSM/TESM) mold
products are corresponded.
(MT3S06T)
(MT3S04AT)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
10
5
10
5
V
V
CBO
CEO
EBO
1.5
15
7
2
V
JEDEC
JEITA
―
―
I
40
10
mA
mA
mW
°C
°C
C
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P
150
125
C
TOSHIBA
2-2JA1C
T
j
Weight: 0.0045 g (typ.)
T
−55~125
stg
Marking
Pin Assignment (top view)
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2003-09-19
MT6L57AT
Electrical Characteristics Q1 (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 5 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
DC current gain
I
V
V
V
V
V
V
V
V
V
70
7
0.1
1
µA
µA
CBO
CB
EB
CE
CE
CE
CE
CE
CE
CB
E
I
= 1 V, I = 0
C
EBO
h
FE
= 1 V, I = 5 mA
140
C
Transition frequency
f
= 3 V, I = 5 mA
10
GHz
dB
T
C
S 2 (1)
= 1 V, I = 5 mA, f = 2 GHz
4.5
7.5
8
21e
C
Insertion gain
S 2 (2)
= 3 V, I = 7 mA, f = 2 GHz
21e
C
NF (1)
NF (2)
= 1 V, I = 3 mA, f = 2 GHz
1.7
1.6
0.35
3
C
Noise figure
dB
pF
= 3 V, I = 3 mA, f = 2 GHz
3
C
Reverse transfer capacitance
C
re
= 1 V, I = 0, f = 1 MHz
(Note)
0.75
E
Note: C is measured by 3 terminal method with capacitance bridge.
re
Electrical Characteristics Q2 (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 5 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
DC current gain
I
V
V
V
V
V
V
V
V
V
V
80
2
0.1
1
µA
µA
CBO
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
E
I
= 1 V, I = 0
C
EBO
h
FE
= 1 V, I = 5 mA
160
C
f
f
(1)
= 1 V, I = 5 mA
4.5
7
T
C
Transition frequency
Insertion gain
GHz
dB
(2)
= 3 V, I = 7 mA
5
T
C
S 2 (1)
= 1 V, I = 5 mA, f = 1 GHz
7.5
8.5
11
1.3
1.2
0.9
21e
C
S 2 (2)
= 3 V, I = 20 mA, f = 1 GHz
21e
C
NF (1)
NF (2)
= 1 V, I = 5 mA, f = 1 GHz
2.2
2
C
Noise figure
dB
pF
= 3 V, I = 7 mA, f = 1 GHz
C
Reverse transfer capacitance
C
re
= 1 V, I = 0, f = 1 MHz
(Note)
1.25
E
Note: C is measured by 3 terminal method with capacitance bridge.
re
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
2
2003-09-19
MT6L57AT
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3
2003-09-19
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