RN1115FT [TOSHIBA]
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal;型号: | RN1115FT |
厂家: | TOSHIBA |
描述: | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RN1114FT~RN1118FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
ꢀ
ꢀ
ꢀ
ꢀ
Built-in bias resistors
Enabling simplified circuit design
Enabling reduction in the quantity of parts and manufacturing process
Complementary to the RN2114FT~2118FT
Equivalent Circuit and Bias Resistor Values
Type No.
R
1
(kΩ)
R (kΩ)
2
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
1
10
2.2
10
10
4.7
10
47
4.7
10
JEDEC
JEITA
―
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
V
V
50
50
V
V
CBO
CEO
RN1114FT~1118FT
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
5
6
Emitter-base voltage
V
7
V
EBO
15
25
Collector current
I
100
100
150
−55~150
mA
mW
°C
c
Collector power dissipation
Junction temperature
Storage temperature range
P
c
RN1114FT~1118FT
T
j
T
stg
°C
1
2005-03-23
RN1114FT~RN1118FT
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
RN1114FT~1118FT
I
I
―
―
―
―
―
―
―
―
V
V
V
V
V
V
V
―
―
―
―
―
―
―
―
―
100
500
nA
nA
CBO
CEO
CB
CE
EB
EB
EB
EB
EB
E
Collector cutoff current
Emitter cutoff current
RN1114FT~1118FT
RN1114FT
= 50 V, I = 0
―
B
= 5 V, I = 0
0.35
0.37
0.36
0.78
0.33
50
0.65
0.71
0.68
1.46
0.63
C
RN1115FT
= 6 V, I = 0
C
I
mA
RN1116FT
= 7 V, I = 0
C
EBO
RN1117FT
= 15 V, I = 0
C
RN1118FT
= 25 V, I = 0
C
RN1114FT~16FT,
18FT
―
―
DC current gain
h
FE
V
CE
= 5 V, I = 10 mA
―
C
RN1117FT
―
―
30
―
Collector-emitter
saturation voltage
RN1114FT~1118FT
V
I
= 5 mA, I = 0.25 mA
C B
―
0.1
0.3
V
CE (sat)
RN1114FT
RN1115FT
―
―
―
―
―
―
―
―
―
―
―
―
0.6
0.7
0.8
1.5
2.5
0.3
0.3
0.3
0.3
0.5
―
―
―
―
―
―
―
―
―
―
―
250
2.0
2.5
2.5
3.5
10.0
0.9
1.0
1.1
2.3
5.7
―
Input voltage (ON)
V
V
= 0.2 V, I = 5 mA
V
V
RN1116FT
I (ON)
CE
C
RN1117FT
RN1118FT
RN1114FT
RN1115FT
Input voltage (OFF)
V
V
CE
= 5 V, I = 0.1 mA
C
RN1116FT
I (OFF)
RN1117FT
RN1118FT
Translation frequency
RN1114FT~1118FT
f
T
V
V
= 10 V, I = 5 mA
MHz
pF
CE
C
Collector output
capacitance
= 10 V, I = 0,
E
CB
RN1114FT~1118FT
C
ob
―
3.0
6.0
f = 1 MHz
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
―
―
―
―
―
―
―
―
―
―
0.7
1.54
3.29
7.0
32.9
―
1.0
2.2
1.3
2.86
6.11
13.0
61.1
―
Input resistor
R
―
―
kΩ
4.7
1
10.0
47.0
0.1
―
0.22
0.47
2.13
4.7
―
Resistor ratio
R /R
1
―
―
―
2
―
―
―
―
2
2005-03-23
RN1114FT~RN1118FT
IC - VI (ON)
IC - VI (ON)
RN1114FT
100
RN1115FT
100
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 0.2V
10
1
10
1
Ta = 100°C
Ta = 100°C
25
-25
25
-25
0.1
0.1
0.1
0.1
1
10
1
10
INPUT VOLTAGE VI (ON) (V)
INPUT VOLTAGE VI (ON) (V)
ꢀ
ꢀ
IC - VI (ON)
RN1116FT
100
IC - VI (ON)
RN1117FT
100
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 0.2V
10
1
10
1
Ta = 100°C
Ta = 100°C
25
25
-25
-25
0.1
0.1
0.1
0.1
1
10
1
10
100
INPUT VOLTAGE VI (ON) (V)
ꢀ
INPUT VOLTAGE VI (ON) (V)
ꢀ
IC - VI (ON)
RN1118FT
100
COMMON EMITTER
VCE = 0.2V
10
1
Ta = 100°C
25
-25
0.1
0.1
1
10
100
INPUT VOLTAGE VI (ON) (V)
ꢀ
3
2005-03-23
RN1114FT~RN1118FT
IC - VI (OFF)
IC - VI (OFF)
RN1114FT
10000
RN1115FT
10000
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
1000
100
10
1000
100
10
25
-25
Ta = 100°C
25
Ta = 100°C
-25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.8
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI (OFF) (V)
INPUT VOLTAGE VI (OFF) (V)
ꢀ
ꢀ
IC - VI (OFF)
RN1117FT
10000
IC - VI (OFF)
RN1116FT
10000
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
1000
100
10
1000
100
10
Ta = 100°C
25
Ta = 100°C
25
-25
-25
0.8
1.2
1.6
2
2.4
2.8
3.2
0.2
0.4
0.6
0.8
1
1.2 1.4
1.6
INPUT VOLTAGE VI (OFF) (V)
ꢀ
INPUT VOLTAGE VI (OFF) (V)
ꢀ
IC - VI (OFF)
RN1118FT
10000
COMMON EMITTER
VCE = 5V
1000
100
10
Ta = 100°C
25
-25
1
2
3
4
5
INPUT VOLTAGE VI (OFF) (V)
ꢀ
4
2005-03-23
RN1114FT~RN1118FT
hFE - IC
hFE - IC
RN1114FT
1000
RN1115FT
1000
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
Ta = 100°C
Ta = 100°C
100
100
25
25
-25
-25
10
1
10
1
10
100
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
hFE - IC
hFE - IC
RN1116FT
1000
RN1117FT
1000
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
100
10
Ta = 100°C
Ta = 100°C
100
25
-25
25
-25
10
1
1
1
10
100
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
hFE - IC
RN1118FT
1000
COMMON EMITTER
VCE = 5V
Ta = 100°C
100
25
-25
10
1
10
100
COLLECTOR CURRENT IC (mA)
ꢀ
5
2005-03-23
RN1114FT~RN1118FT
VCE(sat) - IC
VCE(sat) - IC
RN1114FT
1
RN1115FT
1
COMMON EMITTER
IC / IB = 20
COMMON EMITTER
IC / IB = 20
Ta = 100°C
Ta = 100°C
0.1
0.1
-25
-25
25
25
0.01
0.01
1
10
100
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
VCE(sat) - IC
RN1116FT
1
VCE(sat) - IC
RN1117FT
1
COMMON EMITTER
IC / IB = 20
COMMON EMITTER
IC / IB = 20
Ta = 100°C
Ta = 100°C
0.1
0.1
-25
25
-25
25
0.01
0.01
1
10
100
1
10
100
COLLECTOR CURRENT IC (mA)
ꢀ
COLLECTOR CURRENT IC (mA)
ꢀ
VCE(sat) - IC
RN1118FT
1
COMMON EMITTER
IC / IB = 20
Ta = 100°C
0.1
-25
25
0.01
1
10
100
COLLECTOR CURRENT IC (mA)
ꢀ
6
2005-03-23
RN1114FT~RN1118FT
Type Name
Marking
Type Name
RN1114FT
XQ
XS
XT
Type Name
Type Name
RN1115FT
RN1116FT
RN1117FT
RN1118FT
Type Name
Type Name
XU
XW
7
2005-03-23
RN1114FT~RN1118FT
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
8
2005-03-23
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