RN1241B
更新时间：2024-09-18 18:23:35
品牌：TOSHIBA
描述：TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal
概述
规格参数
数据手册RN1241B 概述
TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal 小信号双极晶体管
RN1241B 规格参数
| 生命周期： | Obsolete | 包装说明： | 2-4E1A, 3 PIN |
| 针数： | 3 | Reach Compliance Code： | unknown |
| 风险等级： | 5.79 | 最大集电极电流 (IC)： | 0.3 A |
| 最小直流电流增益 (hFE)： | 350 | JESD-30 代码： | R-PSIP-T3 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 极性/信道类型： | NPN |
| 最大功率耗散 (Abs)： | 0.3 W | 认证状态： | Not Qualified |
| 子类别： | BIP General Purpose Small Signal | 表面贴装： | NO |
| 端子面层： | TIN LEAD | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
RN1241B 数据手册
通过下载RN1241B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
Unit: mm
For Muting and Switching Applications
l High emitter-base voltage
: V
= 25v (min)
EBO
l High reverse hfe
: reverse h = 150 (typ.) (V
FE CE
= −2V, I = −4ma)
C
l Low on resistance
: R
= 1Ω (typ.) (I = 5mA)
ON
B
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
JEDEC
EIAJ
―
―
TOSHIBA
Weight: 0.13g
2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
50
20
V
V
CBO
CEO
EBO
25
V
I
300
mA
mW
°C
°C
c
Collector power dissipation
Junction temperature
Storage temperature range
P
300
c
T
150
j
T
−55~150
stg
1
2001-06-07
RN1241~RN1244
Electrical Characteristics (Ta = 25°C)
Test
Characteristic
Symbol
Test Condition
= 50V, I = 0
Min
Typ.
Max
Unit
Circuit
―
―
―
―
―
0.1
0.1
µA
µA
Collector cut-off current
Emitter cut-off current
I
V
V
V
CBO
CB
EB
CE
E
―
I
= 25V, I = 0
C
EBO
DC current gain
h
―
―
―
―
―
―
―
―
= 2V, I = 4mA
200
―
―
―
1200
0.1
―
―
V
FE (Note)
C
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
RN1241
V
I = 30mA, I = 3mA
C B
CE (sat)
f
V
V
= 6V, I = 4mA
―
30
4.8
5.6
10
22
2.2
MHz
pF
T
CE
CB
C
C
= 10V, I = 0, f = 1MHz
E
―
―
ob
3.9
7
7.3
13
RN1242
Input resistor
R1
kΩ
―
RN1243
15.4
1.54
28.6
2.86
RN1244
Note: h
Classification A: 200~700 B: 350~1200
EE
2
2001-06-07
RN1241~RN1244
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3
2001-06-07
RN1241B 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| RN1242 | TOSHIBA | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | 获取价格 |
|
| RN1242(TPE4) | TOSHIBA | TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
| RN1242-A | TOSHIBA | TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
| RN1242-B | TOSHIBA | TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
| RN1242A | ETC | TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | 获取价格 |
|
| RN1242B | ETC | TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | 获取价格 |
|
| RN1243 | TOSHIBA | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | 获取价格 |
|
| RN1243-A | TOSHIBA | 暂无描述 | 获取价格 |
|
| RN1243-B | TOSHIBA | TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
| RN1243A | ETC | TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | 获取价格 |
|
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