RN1611 [TOSHIBA]
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process); 东芝晶体管NPN硅外延式（ PCT程序）
| 型号： | RN1611 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) |
| 文件： | 总5页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1610,RN1611
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1610,RN1611
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2610, RN2611
Equivalent Circuit
JEDEC
EIAJ
―
―
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
TOSHIBA
Weight: 0.015g
2-3N1A
Characterisstic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
50
50
V
V
Collector-emitter voltage
Emitter-base voltage
5
V
Collector current
I
100
mA
mW
°C
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P *
C
300
T
150
j
T
−55~150
stg
*
Total rating
Equivalent Circuit (Top View)
1
2001-06-07
RN1610,RN1611
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Test
Characteristic
Symbol
Test Condition
= 50V, I = 0
Min
Typ.
Max
Unit
Circuit
―
Collector cut-off current
Emitter cut-off current
I
V
V
V
―
―
―
―
100
100
700
0.3
―
nA
nA
―
CBO
CB
EB
CE
E
I
―
= 50V, I = 0
C
EBO
DC current gain
h
―
= 50V, I = 1mA
120
―
―
FE
CE (sat)
C
Collector-emitter saturation voltage
Translation frequency
V
―
I
= 5mA, I = 0.25mA
0.1
250
3
V
C
B
f
―
V
V
= 10V, I = 5mA
―
MHz
pF
T
CE
CB
C
―
Collector output capacitance
C
= 10V, I = 0, f = 1MHz
E
―
6
ob
RN1610
Input resistor
3.29
7
4.7
10
6.11
13
R1
―
―
kΩ
RN1611
(Q1, Q2 Common)
2
2001-06-07
RN1610,RN1611
(Q1, Q2 Common)
3
2001-06-07
RN1610,RN1611
Type Name
RN1610
Marking
RN1611
4
2001-06-07
RN1610,RN1611
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-06-07
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