RN1963CT [TOSHIBA]

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications; 开关应用逆变电路应用接口电路应用驱动器电路应用
RN1963CT
型号: RN1963CT
厂家: TOSHIBA    TOSHIBA
描述:

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
开关应用逆变电路应用接口电路应用驱动器电路应用

晶体 驱动器 开关 小信号双极晶体管 光电二极管
文件: 总8页 (文件大小:198K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RN1961CT~RN1966CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1961CT,RN1962CT,RN1963CT  
RN1964CT,RN1965CT,RN1966CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
1.0±0.05  
0.15±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
0.35±0.02  
0.35±0.02  
0.075±0.03  
0.7±0.03  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2961CT to RN2966CT  
Equivalent Circuit and Bias Resistor Values  
(E1)  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
6.COLLECTOR1  
CST6  
RN1961CT  
RN1962CT  
RN1963CT  
RN1964CT  
RN1965CT  
RN1966CT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
22  
47  
TOSHIBA  
2-1K1A  
E
2.2  
4.7  
Weight: 1 mg (typ.)  
Equivalent Circuit  
(top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
20  
20  
V
V
CBO  
CEO  
RN1961CT  
to 1966CT  
Q2  
Q1  
Collector-emitter voltage  
RN1961CT  
to 1964CT  
10  
5
1
2
3
V
V
EBO  
Emitter-base voltage  
RN1965CT,  
1966CT  
Collector current  
I
50  
50  
mA  
mW  
°C  
C
RN1961CT  
to  
RN1966CT  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note1)  
C
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: Total rating  
1
2009-04-14  
RN1961CT~RN1966CT  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Symbol  
Test Condition  
= 20 V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
I
I
V
V
100  
500  
1.33  
0.63  
0.29  
0.133  
0.127  
0.121  
CBO  
CEO  
CB  
CE  
E
Collector cut-off current  
RN1961CT to 1966CT  
= 20 V, I = 0  
B
RN1961CT  
RN1962CT  
RN1963CT  
RN1964CT  
RN1965CT  
RN1966CT  
RN1961CT  
RN1962CT  
RN1963CT  
RN1964CT  
RN1965CT  
RN1966CT  
0.89  
0.41  
0.18  
0.088  
0.085  
0.08  
30  
V
V
= 10 V, I = 0  
C
EB  
EB  
Emitter cut-off current  
I
mA  
EBO  
= 5 V, I = 0  
C
60  
100  
120  
120  
120  
DC current gain  
h
V
= 5 V, I = 10 mA  
CE C  
FE  
Collector-emitter  
saturation voltage  
I
I
= 5 mA,  
C
B
RN1961CT to 1966CT  
V
0.15  
V
V
CE (sat)  
= 0.25 mA  
RN1961CT  
RN1962CT  
1.0  
1.0  
1.1  
1.2  
0.6  
0.6  
0.8  
0.4  
2.0  
2.2  
2.7  
3.6  
1.1  
1.2  
1.5  
0.8  
RN1963CT  
Input voltage (ON)  
V
V
= 0.2 V, I = 5 mA  
CE C  
I (ON)  
RN1964CT  
RN1965CT  
RN1966CT  
RN1961CT to 1964CT  
RN1965CT, 1966CT  
Input voltage (OFF)  
V
V
V
= 5 V, I = 0.1 mA  
V
I (OFF)  
CE  
CB  
C
Collector output  
capacitance  
= 10 V, I = 0,  
E
RN1961CT to 1966CT  
C
1.2  
pF  
ob  
f = 1 MHz  
RN1961CT  
RN1962CT  
3.76  
8
4.7  
10  
5.64  
12  
RN1963CT  
17.6  
37.6  
1.76  
3.76  
0.8  
22  
26.4  
56.4  
2.64  
5.64  
1.2  
Input resistor  
Resistor ratio  
R1  
kΩ  
RN1964CT  
47  
RN1965CT  
2.2  
4.7  
1.0  
RN1966CT  
RN1961CT to 1964CT  
RN1965CT  
R1/R2  
0.0376 0.0468 0.0562  
0.08 0.1 0.12  
RN1966CT  
2
2009-04-14  
RN1961CT~RN1966CT  
(Q1,Q2 common)  
IC - VI(ON)  
IC - VI(ON)  
RN1962CT  
RN1961CT  
100  
100  
10  
1
Ta=100°C  
Ta=100°C  
10  
25  
25  
1
-25  
-25  
COMMON EMITTER  
COMMON EMITTER  
VCE=0.2V  
VCE=0.2V  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
100  
100  
INPUT VOLTAGE VI(ON) (V)  
INPUT VOLTAGE VI(ON) (V)  
IC - VI(ON)  
IC - VI(ON)  
RN1964CT  
RN1963CT  
100  
10  
1
100  
10  
1
Ta=100°C  
Ta=100°C  
25  
25  
-25  
-25  
COMMON EMITTER  
VCE=0.2V  
COMMON EMITTER  
VCE=0.2V  
0.1  
0.1  
0.1  
1
10  
0.1  
1
10  
100  
INPUT VOLTAGE VI(ON) (V)  
INPUT VOLTAGE VI(ON) (V)  
RN1965CT  
IC - VI(ON)  
IC - VI(ON)  
RN1966CT  
100  
10  
1
100  
10  
1
Ta=100°C  
Ta=100°C  
25  
25  
-25  
-25  
COMMON EMITTER  
VCE=0.2V  
COMMON EMITTER  
VCE=0.2V  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
INPUT VOLTAGE VI(ON) (V)  
INPUT VOLTAGE VI(ON) (V)  
3
2009-04-14  
RN1961CT~RN1966CT  
(Q1,Q2 common)  
RN1961CT  
10000  
RN1962CT  
IC - VI(OFF)  
IC - VI(OFF)  
10000  
1000  
100  
COMMON EMITTER  
COMMON EMITTER  
VCE=5V  
VCE=5V  
1000  
100  
10  
Ta=100°C  
Ta=100°C  
25  
-25  
25  
-25  
10  
0.4 0.6 0.8  
RN1963CT  
1
1.2 1.4 1.6 1.8  
2
0.4 0.6 0.8  
RN1964CT  
1
1.2 1.4 1.6 1.8  
2
INPUT VOLTAGE VI(OFF) (V)  
INPUT VOLTAGE VI(OFF) (V)  
IC - VI(OFF)  
IC - VI(OFF)  
10000  
1000  
100  
10000  
1000  
100  
COMMON EMITTER  
VCE=5V  
COMMON EMITTER  
VCE=5V  
Ta=100°C  
Ta=100°C  
25  
-25  
25  
-25  
10  
10  
0.4 0.6 0.8  
RN1965CT  
1
1.2 1.4 1.6 1.8  
2
0.4 0.6 0.8  
RN1966CT  
1
1.2 1.4 1.6 1.8  
2
INPUT VOLTAGE VI(OFF) (V)  
INPUT VOLTAGE VI(OFF) (V)  
IC - VI(OFF)  
IC - VI(OFF)  
10000  
1000  
100  
10000  
1000  
100  
COMMON EMITTER  
VCE=5V  
COMMON EMITTER  
VCE=5V  
Ta=100°C  
25  
-25  
Ta=100°C  
25  
-25  
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
INPUT VOLTAGE VI(OFF) (V)  
INPUT VOLTAGE VI(OFF) (V)  
4
2009-04-14  
RN1961CT~RN1966CT  
(Q1,Q2 common)  
RN1962CT  
hFE - IC  
RN1961CT  
1000  
hFE - IC  
1000  
Ta=100°C  
100  
10  
Ta=100°C  
25  
25  
100  
-25  
-25  
COMMON EMITTER  
VCE = 5V  
COMMON EMITTER  
VCE = 5V  
10  
1
1
1
10  
100  
100  
100  
10  
100  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1963CT  
RN1964CT  
hFE - IC  
hFE - IC  
1000  
1000  
Ta=100°C  
Ta=100°C  
25  
25  
-25  
100  
100  
-25  
COMMON EMITTER  
VCE = 5V  
COMMON EMITTER  
VCE = 5V  
10  
10  
1
10  
100  
1
10  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1965CT  
RN1966CT  
hFE - IC  
hFE - IC  
1000  
1000  
Ta=100°C  
Ta=100°C  
25  
25  
-25  
-25  
100  
100  
COMMON EMITTER  
VCE = 5V  
COMMON EMITTER  
VCE = 5V  
10  
10  
1
10  
COLLECTOR CURRENT IC (mA)  
100  
1
10  
COLLECTOR CURRENT IC (mA)  
5
2009-04-14  
RN1961CT~RN1966CT  
(Q1,Q2 common)  
RN1961CT  
1000  
RN1962CT  
VCE(sat) - IC  
VCE(sat) - IC  
1000  
COMMON EMITTER  
IC / IB = 20  
COMMON EMITTER  
IC / IB = 20  
Ta=100°C  
100  
100  
Ta=100°C  
25  
25  
-25  
-25  
10  
10  
1
1
1
10  
COLLECTOR CURRENT IC (mA)  
100  
100  
100  
1
1
1
10  
COLLECTOR CURRENT IC (mA)  
100  
100  
100  
RN1963CT  
RN1964CT  
VCE(sat) - IC  
VCE(sat) - IC  
1000  
1000  
COMMON EMITTER  
IC / IB = 20  
COMMON EMITTER  
IC / IB = 20  
100  
100  
Ta=100°C  
Ta=100°C  
25  
25  
-25  
-25  
10  
10  
10  
COLLECTOR CURRENT IC (mA)  
10  
COLLECTOR CURRENT IC (mA)  
RN1965CT  
RN1966CT  
VCE(sat) - IC  
VCE(sat) - IC  
1000  
1000  
COMMON EMITTER  
IC / IB = 20  
COMMON EMITTER  
IC / IB = 20  
100  
100  
Ta=100°C  
Ta=100°C  
25  
25  
-25  
-25  
10  
10  
10  
COLLECTOR CURRENT IC (mA)  
10  
COLLECTOR CURRENT IC (mA)  
6
2009-04-14  
RN1961CT~RN1966CT  
Type Name  
RN1961CT  
Marking  
Type name  
Type name  
Type name  
J0  
RN1962CT  
RN1963CT  
RN1964CT  
RN1965CT  
J1  
J2  
Type name  
J3  
Type name  
J4  
Type name  
RN1966CT  
J5  
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
7
2009-04-14  
RN1961CT~RN1966CT  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
8
2009-04-14  

相关型号:

RN1963CT(TE85L)

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
TOSHIBA

RN1963FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
TOSHIBA

RN1963FE(TE85L,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
TOSHIBA

RN1963FE(TPL3,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
TOSHIBA

RN1963FS

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
TOSHIBA

RN1963FS(TPL3)

Digital Transistors 50mA 20volts 6Pin 22K x 22Kohms
TOSHIBA

RN1963TE85L

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN1963TE85N

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN1963TE85R

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN1964

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
TOSHIBA

RN1964(TE85L)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1964(TE85L,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
TOSHIBA