RN1965FE [TOSHIBA]
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor); 东芝晶体管NPN硅外延式（ PCT程序） （偏置电阻内置晶体管）
| 型号： | RN1965FE |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1961FE~RN1966FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FE,RN1962FE,RN1963FE
RN1964FE,RN1965FE,RN1966FE
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications.
·
·
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2961FE~RN2966FE
·
Equivalent Circuit and Bias Resistor Values
C
Type No.
R1 (kW)
R2 (kW)
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
4.7
10
4.7
10
22
47
47
47
R1
B
22
47
JEDEC
JEITA
―
―
―
E
2.2
4.7
TOSHIBA
Weight:
g (typ.)
Equivalent Circuit
(top view)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
6
5
4
V
V
50
50
V
V
CBO
CEO
RN1961FE~
1966FE
Q2
Collector-emitter voltage
Q1
RN1961FE~
1964FE
10
5
Emitter-base voltage
V
V
EBO
RN1965FE,
1966FE
1
2
3
Collector current
I
100
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
(Note)
C
T
RN1961FE~
RN1966FE
150
j
T
-55~150
°C
stg
Note: Total rating
1
2002-01-29
RN1961FE~RN1966FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
RN1961FE~1966FE
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
nA
I
I
V
V
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
100
500
1.52
0.71
0.33
0.15
0.145
0.138
¾
CBO
CEO
CB
CE
E
Collector cut-off current
= 50 V, I = 0
B
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
0.82
0.38
0.17
0.082
0.078
0.074
30
V
V
= 10 V, I = 0
C
EB
EB
Emitter cut-off current
I
mA
EBO
= 5 V, I = 0
C
50
¾
70
¾
DC current gain
h
FE
V
= 5 V, I = 10 mA
C
CE
80
¾
80
¾
80
¾
Collector-emitter
saturation voltage
I
I
= 5 mA,
C
B
RN1961FE~1966FE
V
¾
0.1
0.3
V
V
CE (sat)
= 0.25 mA
RN1961FE
RN1962FE
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
¾
¾
¾
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
¾
RN1963FE
¾
Input voltage (ON)
V
V
= 0.2 V, I = 5 mA
C
I (ON)
CE
RN1964FE
¾
RN1965FE
¾
RN1966FE
¾
RN1961FE~1964FE
RN1965FE, 1966FE
RN1961FE~1966FE
¾
Input voltage (OFF)
Transition frequency
V
V
= 5 V, I = 0.1 mA
V
I (OFF)
CE
C
¾
f
V
V
= 10 V, I = 5 mA
250
MHz
pF
T
CE
CB
C
Collector output
capacitance
= 10 V, I = 0,
E
RN1961FE~1966FE
C
ob
¾
3
6
f = 1 MHz
RN1961FE
RN1962FE
3.29
7
4.7
10
6.11
13
RN1963FE
15.4
32.9
1.54
3.29
0.9
22
28.6
61.1
2.86
6.11
1.1
Input resistor
Resistor ratio
R1
¾
kW
RN1964FE
47
RN1965FE
2.2
4.7
1.0
RN1966FE
RN1961FE~1964FE
RN1965FE
R1/R2
¾
0.0421 0.0468 0.0515
0.09 0.1 0.11
RN1966FE
2
2002-01-29
RN1961FE~RN1966FE
Type Name
RN1961FE
Marking
Type name
Type name
Type name
Type name
Type name
X X A
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
X X B
X X C
X X D
X X E
X X F
Type name
3
2002-01-29
RN1961FE~RN1966FE
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
4
2002-01-29
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