RN2107F [TOSHIBA]

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 开关,逆变电路,接口电路及驱动电路的应用
RN2107F
型号: RN2107F
厂家: TOSHIBA    TOSHIBA
描述:

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
开关,逆变电路,接口电路及驱动电路的应用

晶体 开关 小信号双极晶体管 光电二极管 驱动
文件: 总6页 (文件大小:220K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RN2107F~RN2109F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2107F,RN2108F,RN2109F  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit in mm  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1107F~RN1109F  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN2107F  
RN2108F  
RN2109F  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
2-2HA1A  
TOSHIBA  
Weight: 2.3 mg  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2107F  
~RN2109F  
Collector-emitter voltage  
RN2107F  
RN2108F  
RN2109F  
6  
Emitter-base voltage  
V
V
7  
EBO  
15  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2107F  
~RN2109F  
T
150  
j
T
55~150  
°C  
stg  
000707EAA1  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
· The information contained herein is subject to change without notice.  
2001-02-08 1/5  
RN2107F~RN2109F  
Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Circuit  
I
I
V
V
V
V
V
100  
500  
0.15  
0.145  
0.311  
nA  
nA  
CBO  
CEO  
CB  
CE  
EB  
EB  
EB  
E
Collector cut-off  
RN2107F  
current  
~RN2109F  
= 50V, I = 0  
B
RN2107F  
RN2108F  
RN2109F  
RN2107F  
RN2108F  
RN2109F  
= 6V, I = 0  
0.081  
0.078  
0.167  
80  
C
Emitter cut-off current  
I
mA  
= 7V, I = 0  
EBO  
C
= 15V, I = 0  
C
V
= 5V,  
CE  
DC current gain  
h
FE  
V
80  
I
= 10mA  
C
70  
Collector-emitter  
saturation voltage  
RN2107F  
I
I
= 5mA,  
C
B
V
0.1  
0.3  
CE (sat)  
= 0.25mA  
~RN2109F  
0.7  
1.0  
2.2  
0.5  
0.6  
1.5  
1.8  
2.6  
5.8  
1.0  
1.16  
2.6  
RN2107F  
RN2108F  
RN2109F  
RN2107F  
RN2108F  
RN2109F  
V
= 0.2V,  
CE  
Input voltage (ON)  
V
I (ON)  
V
I
= 5mA  
C
V
= 5V,  
CE  
Input voltage (OFF)  
Transition frequency  
V
V
I (OFF)  
I
= 0.1mA  
C
RN2107F  
V
I
= 10V,  
CE  
CB  
f
200  
3
MHz  
pF  
T
= 5mA  
~RN2109F  
C
Collector Output  
capacitance  
RN2107F  
V
= 10V, I = 0,  
E
C
ob  
6
f = 1MH  
~RN2109F  
z
7
10  
22  
13  
RN2107F  
RN2108F  
RN2109F  
RN2107F  
RN2108F  
RN2109F  
Input resistor  
Resistor ratio  
R1  
kΩ  
15.4  
32.9  
0.191  
0.421  
1.92  
28.6  
61.1  
0.232  
0.515  
2.35  
47  
0.213  
0.468  
2.14  
R1/R2  
2001-02-08 2/5  
RN2107F~RN2109F  
2001-02-08 3/5  
RN2107F~RN2109F  
2001-02-08 4/5  
RN2107F~RN2109F  
Type Name  
RN2107F  
Marking  
RN2108F  
RN2109F  
2001-02-08 5/5  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

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