RN2111FT [TOSHIBA]
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal;
| 型号： | RN2111FT |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN2110FT,RN2111FT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2110FT, RN2111FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
•
•
High-density mount is possible because of devices housed in very thin
TESM packages.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
•
•
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN1110FT, RN1111FT
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
V
V
Collector-emitter voltage
Emitter-base voltage
−5
V
Collector current
I
−100
100
mA
mW
°C
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
T
150
j
T
−55~150
stg
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-12-26 1/2
RN2110FT,RN2111FT
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= −50 V, I = 0
Min
Typ.
Max
Unit
I
V
V
V
−100
−100
400
−0.3
nA
nA
CBO
CB
EB
CE
E
Emitter cut-off current
I
= −5 V, I = 0
C
EBO
DC current gain
h
= −5 V, I = −1 mA
120
FE
CE (sat)
C
Collector-emitter saturation voltage
Transition frequency
V
I
= −5 mA, I = −0.25 mA
−0.1
200
3
V
C
B
f
V
V
= −10 V, I = −5 mA
MHz
pF
T
CE
CB
C
Collector output capacitance
C
ob
= −10 V, I = 0, f = 1 MHz
6
E
RN2110FT
Input resistor
3.29
7
4.7
10
6.11
13
R1
kΩ
RN2111FT
Type Name
RN1110FT
Marking
Type name
Y K
Type name
RN1111FT
Y M
2000-12-26 2/2
相关型号：
RN2111FV
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN2111MFV(TL3MAA)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
TOSHIBA
RN2112ACT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
RN2112CT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
RN2112FT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
TOSHIBA
©2020 ICPDF网 联系我们和版权申明