RN2116FT(F)
更新时间：2024-09-18 13:02:14
品牌：TOSHIBA
描述：PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
概述
规格参数
数据手册RN2116FT(F) 概述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR 小信号双极晶体管
RN2116FT(F) 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | , | Reach Compliance Code： | unknown |
| 风险等级： | 5.8 | Is Samacsys： | N |
| 最大集电极电流 (IC)： | 0.1 A | 最小直流电流增益 (hFE)： | 50 |
| 元件数量： | 1 | 极性/信道类型： | PNP |
| 最大功率耗散 (Abs)： | 0.1 W | 子类别： | BIP General Purpose Small Signals |
| 表面贴装： | YES | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
RN2116FT(F) 数据手册
通过下载RN2116FT(F)数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载RN2114~RN2118
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114,RN2115,RN2116
RN2117,RN2118
Switching, Inverter Circuit, Interface Circuit
Unit: mm
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1114~RN1118
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2114
RN2115
RN2116
RN2117
RN2118
1
10
10
10
4.7
10
2.2
4.7
10
47
JEDEC
―
―
EIAJ
2−2H1A
TOSHIBA
Weight: 2.4mg
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
V
−50
−50
V
V
CBO
CEO
RN2114~2118
Collector-emitter voltage
RN2114
RN2115
RN2116
RN2117
RN2118
−5
−6
Emitter-base voltage
V
V
−7
EBO
−15
−25
Collector current
I
−100
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
RN2114~2118
T
150
j
T
−55~150
°C
stg
1
2001-06-07
RN2114~RN2118
Electrical Characteristics (Ta = 25°C)
Test
Characteristic
Symbol
Test Condition
= −50V, I = 0
Min
Typ.
Max
Unit
Circuit
RN2114~2118
RN2114~2118
RN2114
I
I
V
V
V
V
V
V
V
―
―
―
―
―
―
―
―
−100
−500
−0.65
−0.71
−0.68
−1.46
−0.63
nA
nA
CBO
CEO
CB
CE
EB
E
Collector cut-off
―
current
= −50V, I = 0
―
B
= −5V, I = 0
−0.35
−0.37
−0.36
−0.78
−0.33
C
RN2115
= −6V, I = 0
EB
EB
EB
EB
C
Emitter cut-off current
I
―
mA
RN2116
= −7V, I = 0
EBO
C
RN2117
= −15V, I = 0
C
RN2118
= −25V, I = 0
C
RN2114~16
18
50
―
―
V
= −5V,
CE
DC current gain
h
―
―
―
FE
I
= −10mA
C
RN2117
30
―
―
Collector-emitter
saturation voltage
RN2114~2118
V
I
= −5mA, I = −0.25mA
―
−0.1
−0.3
V
CE (sat)
C
B
−0.5
−0.6
−0.7
−1.5
−2.5
−0.3
−0.3
−0.3
−0.3
−0.5
―
―
―
―
―
―
―
―
―
―
―
200
−2.0
−2.5
−2.5
−3.5
−10.0
−0.9
−1.0
−1.1
−3.0
−5.7
―
RN2114
RN2115
RN2116
RN2117
RN2118
RN2114
RN2115
RN2116
RN2117
Input voltage (ON)
V
―
V
V
= −0.2V, I = −5mA
V
V
I (ON)
CE
C
Input voltage (OFF)
Transition frequency
V
―
= −5V, I = −0.1mA
I (OFF)
CE
C
RN2118
RN2114~2118
f
―
―
V
V
= −10V, I = −5mA
MHz
pF
T
CE
CB
C
Collector Output
capacitance
= −10V, I = 0,
E
RN2114~2118
C
ob
―
3.0
6.0
f = 1MHz
0.7
1.54
3.29
7.0
32.9
―
1.0
2.2
1.3
2.86
6.11
13.0
61.1
―
RN2114
RN2115
RN2116
RN2117
RN2118
RN2114
RN2115
RN2116
RN2117
RN2118
Input resistor
Resistor ratio
R1
―
―
kΩ
4.7
10.0
47.0
0.1
―
0.22
0.47
2.13
4.7
―
R1/R2
―
―
―
―
―
―
―
―
―
2
2001-06-07
RN2114~RN2118
3
2001-06-07
RN2114~RN2118
4
2001-06-07
RN2114~RN2118
5
2001-06-07
RN2114~RN2118
6
2001-06-07
RN2114~RN2118
Type Name
RN2114
Marking
RN2115
RN2116
RN2117
RN2118
7
2001-06-07
RN2114~RN2118
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2001-06-07
RN2116FT(F) 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| RN2116MFV | TOSHIBA | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications | 获取价格 |
|
| RN2116MFV(TL3PAV) | TOSHIBA | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
|
| RN2116MFV(TPL3) | TOSHIBA | Digital Transistors -50volts 100mA 3Pin 4.7Kohms x 10Kohms | 获取价格 |
|
| RN2117 | TOSHIBA | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
| RN2117(TE85R) | TOSHIBA | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
| RN2117FT(F) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR | 获取价格 |
|
| RN2117MFV | TOSHIBA | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications | 获取价格 |
|
| RN2117MFV(TPL3) | TOSHIBA | Digital Transistors -50volts 100mA 3Pin 10Kohms x 4.7Kohms | 获取价格 |
|
| RN2118 | TOSHIBA | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
| RN2118(TE85L) | TOSHIBA | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal | 获取价格 |
|
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