RN2321A
更新时间：2024-09-18 05:57:17
品牌：TOSHIBA
描述：Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
概述
规格参数
数据手册RN2321A 概述
Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications PNP硅外延型（厘过程）开关，逆变电路，接口电路及驱动电路的应用 小信号双极晶体管
RN2321A 规格参数
| 生命周期： | Obsolete | 零件包装代码： | SC-70 |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.75 | 风险等级： | 5.84 |
| 其他特性： | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC)： | 0.5 A |
| 集电极-发射极最大电压： | 12 V | 配置： | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE)： | 35 | JESD-30 代码： | R-PDSO-G3 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 极性/信道类型： | PNP |
| 最大功率耗散 (Abs)： | 0.1 W | 认证状态： | Not Qualified |
| 子类别： | BIP General Purpose Small Signal | 表面贴装： | YES |
| 端子面层： | TIN LEAD | 端子形式： | GULL WING |
| 端子位置： | DUAL | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 200 MHz |
| Base Number Matches： | 1 |
RN2321A 数据手册
通过下载RN2321A数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载RN2321A∼RN2327A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2321A,RN2322A,RN2323A,RN2324A
RN2325A,RN2326A,RN2327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
z High current driving is possible.
z Since bias resisters are built in the transistor, the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
z Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
z Complementary to RN1321A~RN1327A
z Low V
enable to be low power dissipation on high current driving.
CE(sat)
Equivalent Circuit And Bias Resistance Values
Type No.
R1 (kΩ)
R2 (kΩ)
1.BASE
2.EMITTER
3.COLLECTOR
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
1
2.2
4.7
10
1
2.2
4.7
10
10
10
10
JEDEC
JEITA
―
SC-70
2-2E1A
0.47
1
TOSHIBA
Weight: 0.006 g (typ.)
2.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
V
−15
−12
V
V
CBO
CEO
RN2321A~2327A
Collector-emitter voltage
Emitter-base voltage
RN2321A~2324A
RN2325A, 2326A
RN2327A
−10
V
V
−5
EBO
−6
Collector current
I
−500
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
RN2321A~2327A
T
150
j
T
stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2321A∼RN2327A
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= −15V, I = 0
Min
Typ.
Max
Unit
nA
I
I
V
V
―
―
―
―
―
―
―
―
―
―
−100
−500
−7.14
−3.25
−1.52
−0.71
−0.682
−0.65
−0.703
―
CBO
CB
CE
E
Collector cut-off
RN2321A~2327A
―
current
= −12V, I = 0
CEO
B
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
−3.85
−1.75
−0.82
−0.38
−0.365
−0.35
−0.378
35
V
=−10V, I = 0
C
EB
Emitter cut-off current
I
―
mA
EBO
V
V
= −5V, I = 0
C
EB
EB
= −6V, I = 0
C
―
―
―
―
―
―
―
65
―
100
―
DC current gain
h
―
―
―
V
= −1V, I =−50mA
140
―
FE
CE
C
140
―
140
―
RN2327A
RN2321A
140
―
I
I
= −50mA, I =−2mA
B
C
C
Collector-emitter
saturation voltage
V
―
―
−0.25
V
V
CE (sat)
RN2322A~2327A
RN2321A
= −50mA, I =−1mA
B
−1.0
−1.1
−1.3
−1.5
−0.5
−0.6
−0.7
−0.8
−0.4
−0.5
―
―
―
―
―
―
―
―
―
―
―
200
−2.4
−2.7
−3.5
−5.2
−1.2
−1.4
−1.9
−1.4
−0.8
−1.0
―
RN2322A
RN2323A
Input voltage (ON)
V
V
=−0.2V, I =−50mA
RN2324A
I (ON)
CE
C
RN2325A
RN2326A
RN2327A
RN2321A~2324A
RN2325A, 2326A
RN2327A
Input voltage (OFF)
Transition frequency
V
―
V
= −5V, I = −0.1mA
V
I (OFF)
CE
C
RN2321A~2327A
f
―
―
V
V
=−5V, I =−20mA
MH
T
CE
CB
C
z
Collector Output
capacitance
= 10V, I = 0,
E
RN2321A~2327A
C
―
5
―
pF
ob
f = 1MH
z
0.7
1.54
3.29
7
1
2.2
1.3
2.86
6.11
13
RN2321A
RN2322A
4.7
RN2323A
Input resistor
R1
―
―
kΩ
10
RN2324A
0.329
0.7
0.47
1
0.611
1.3
RN2325A
RN2326A
1.54
0.85
0.040
0.085
0.187
2.2
2.86
1.15
0.054
0.115
0.253
RN2327A
1.0
RN2321A~2324A
RN2325A
0.047
0.1
Resistor ratio
R1/R2
―
―
RN2326A
RN2327A
0.220
2
2007-11-01
RN2321A∼RN2327A
IC - VI(ON)
RN2321A IC - VI(OFF)
RN2321A
-1000
-100
-10
-10000
-1000
-100
Ta=100°C
25
Ta=100°C
25
- 25
- 25
COMMON
EMITTER
VCE=- 5V
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
-0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
hFE - IC
VCE(sat) - IC
RN2321A
RN2321A
1000
100
10
-1
COMMON EMITTER
IC/IB=25
Ta=100°C
Ta=100°C
25
0.1
- 25
25
-25
COMMON EMITTER
VCE=- 1V
1
.01
-10
-1
-10
-100
-1000
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
3
2007-11-01
RN2321A∼RN2327A
RN2322A IC - VI(ON)
RN2322A IC - VI(OFF)
-1000
-100
-10
-10000
-1000
-100
Ta=100°C
25
Ta=100°C
25
- 25
- 25
COMMON
EMITTER
VCE=- 5V
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
-0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT CURRENT VI(OFF) (V)
RN2322A
RN2322A
hFE - IC
VCE(sat) - IC
1000
100
10
-1
COMMON EMITTER
IC/IB=50
COMMON EMITTER
VCE=- 1V
Ta=100°C
Ta=100°C
25
-0.1
- 25
25
- 25
1
-0.01
-1
-10
-100
-1000
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
4
2007-11-01
RN2321A∼RN2327A
RN2323A IC - VI(ON)
Ta=100°C
IC - VI(OFF)
RN2323A
-1000
-100
-10
-10000
-1000
-100
COMMON
EMITTER
VCE=- 5V
Ta=100°C
25
25
- 25
- 25
-1
COMMON EMITTER
VCE=- 0.2V
-10
-0.1
-0
-0.5
-1
-1.5
-2
-0.1
-1
-10
-100
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2323A
hFE - IC
RN2323A VCE(sat) - IC
1000
100
10
-1
COMMON EMITTER
IC/IB=50
Ta=100°C
Ta=100°C
25
- 25
-0.1
25
- 25
COMMON EMITTER
VCE=- 1V
1
-0.01
-10
-1
-10
-100
-1000
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
5
2007-11-01
RN2321A∼RN2327A
IC - VI(OFF)
RN2324A
RN2324A IC - VI(ON)
Ta=100°C
-1000
-100
-10
-10000
-1000
-100
COMMON
EMITTER
VCE=- 5V
25
Ta=100°C
-25
25
-25
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
-0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2324A
hFE - IC
RN2324A VCE(sat) - IC
1000
100
10
-1
Ta=100°C
COMMON EMITTER
IC/IB=50
25
- 25
Ta=100°C
-0.1
25
- 25
COMMON EMITTER
VCE=- 1V
1
-0.01
-1
-10
-100
-1000
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
6
2007-11-01
RN2321A∼RN2327A
RN2325A IC - VI(ON)
Ta=100°C
RN2325A IC - VI(OFF)
Ta=100°C
-1000
-100
-10
-10000
-1000
-100
25
- 25
25
- 25
-1
COMMON EMITTER
COMMON EMITTER
VCE=- 5V
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2325A
hFE - IC
RN2325A VCE(sat) - IC
1000
100
10
-1
COMMON EMITTER
IC/IB=50
Ta=100°C
25
Ta=100°C
- 25
-0.1
25
- 25
COMMON EMITTER
VCE=- 1V
1
-0.01
-10
-1
-10
-100
-1000
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
7
2007-11-01
RN2321A∼RN2327A
RN2326A IC - VI(ON)
Ta=100°C
RN2326A IC - VI(OFF)
Ta=100°C
-1000
-100
-10
-10000
-1000
-100
25
- 25
25
- 25
COMMON
EMITTER
VCE=- 5V
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2326A
VCE(sat) - IC
RN2326A
hFE - IC
-1
1000
100
10
COMMON EMITTER
IC/IB=50
Ta=100°C
Ta=100°C
25
- 25
-0.1
25
- 25
COMMON EMITTER
VCE=- 1V
-0.01
-10
1
-100
-1000
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
8
2007-11-01
RN2321A∼RN2327A
RN2327A IC - VI(ON)
Ta=100°C
RN2327A IC - VI(OFF)
Ta=100°C
-1000
-100
-10
-10000
-1000
-100
- 25
25
25
- 25
COMMON
EMITTER
VCE=- 5V
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-10
-0.1
-1
-10
-100
0
-0.5
-1
-1.5
-2
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2327A
Ta=100°C
hFE - IC
RN2327A VCE(sat) - IC
1000
100
10
-1
COMMON EMITTER
IC/IB=50
25
- 25
Ta=100°C
-0.1
25
- 25
COMMON EMITTER
VCE=-1V
1
-0.01
-10
-1
-10
-100
-1000
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
9
2007-11-01
RN2321A∼RN2327A
Type Name
RN2321A
Marking
R A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
R B
R C
R D
R E
R F
R G
10
2007-11-01
RN2321A∼RN2327A
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
11
2007-11-01
RN2321A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| RN2321A(TE85L) | TOSHIBA | RN2321A(TE85L) | 获取价格 |
|
| RN2322A | TOSHIBA | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
| RN2322A(TE85L) | TOSHIBA | RN2322A(TE85L) | 获取价格 |
|
| RN2322A(TE85L,F) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70 | 获取价格 |
|
| RN2323A | TOSHIBA | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
| RN2323A(TE85L) | TOSHIBA | RN2323A(TE85L) | 获取价格 |
|
| RN2324A | TOSHIBA | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
| RN2324A(TE85L) | TOSHIBA | RN2324A(TE85L) | 获取价格 |
|
| RN2324A(TE85L,F) | TOSHIBA | PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70 | 获取价格 |
|
| RN2325A | TOSHIBA | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | 获取价格 |
|
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