RN2910 [TOSHIBA]
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); 东芝晶体管PNP硅外延型(厘过程)型号: | RN2910 |
厂家: | TOSHIBA |
描述: | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
文件: | 总6页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RN2910,RN2911
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2910,RN2911
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1910, RN1911
Equivalent Circuit
JEDEC
EIAJ
―
―
TOSHIBA
Weight: 6.8mg
2-2J1A
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
−5
V
I
−100
200
mA
mW
°C
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
P *
C
T
150
j
T
−55~150
stg
Equivalent Circuit (Top View)
1
2001-06-07
RN2910,RN2911
Electrical Characteristics (Ta = 25°C)
Test
Characteristic
Symbol
Test Condition
= −50V, I = 0
Min
Typ.
Max
Unit
Circuit
Collector cut-off current
Emitter cut-off current
I
I
―
―
―
―
―
―
V
V
V
―
―
―
―
−100
−100
400
−0.3
―
nA
nA
―
CBO
CB
EB
CE
E
= −5V, I = 0
EBO
C
DC current gain
h
= −5V, I = −1mA
120
―
―
FE
CE (sat)
C
Collector-emitter saturation voltage
Translation frequency
V
I
= −5mA, I = −0.25mA
−0.1
200
3
V
C
B
f
V
V
= −10V, I = −5mA
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10V, I = 0V, f = 1MHz
―
6
ob
E
RN2910
RN2911
3.29
7
4.7
10
6.11
13
Input resistor
―
―
―
kΩ
2
2001-06-07
RN2910,RN2911
(Q1, Q2 Common)
3
2001-06-07
RN2910,RN2911
4
2001-06-07
RN2910,RN2911
Type Name
RN2910
Marking
RN2911
5
2001-06-07
RN2910,RN2911
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2001-06-07
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