RN2963FE [TOSHIBA]

Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor); PNP硅外延式（ PCT程序）（偏置电阻内置晶体管）


型号：	RN2963FE
厂家：	TOSHIBA
描述：	Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) PNP硅外延式（ PCT程序）（偏置电阻内置晶体管）晶体晶体管 PC
文件：	总8页 (文件大小：559K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RN2961FE~RN2966FE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2961FE,RN2962FE,RN2963FE

RN2964FE,RN2965FE,RN2966FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1961FE~RN1966FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

4.7

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-2N1A

Weight: 0.003 g (typ.)

Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2961FE~2966FE

Collector-emitter voltage

Emitter-base voltage

RN2961FE~2964FE

RN2965FE, 2966FE

−10

EBO

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note)

RN2961FE~2966FE

150

stg

−55~150

°C

Note: Total rating

2004-07-01

RN2961FE~RN2966FE

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

⎯

−100

−500

−1.52

−0.71

−0.33

−0.15

−0.145

−0.138

⎯

CBO

CEO

Collector cut-off current

RN2961FE~2966FE

= −50 V, I = 0

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

−0.82

−0.38

−0.17

−0.082

−0.078

−0.074

= −10 V, I = 0

Emitter cut-off current

EBO

= −5 V, I = 0

⎯

= −5 V,

= −10 mA

DC current gain

⎯

Collector-emitter

saturation voltage

= −5 mA,

RN2961FE~2966FE

⎯

−0.1

−0.3

CE (sat)

= −0.25 mA

RN2961FE

RN2962FE

−1.1

−1.2

−1.3

−1.5

−0.6

−0.7

−1.0

−0.5

⎯

−2.0

−2.4

−3.0

−5.0

−1.1

−1.3

−1.5

−0.8

RN2963FE

= −0.2 V,

Input voltage (ON)

I (ON)

= −5 mA

RN2964FE

RN2965FE

RN2966FE

RN2961FE~2964FE

RN2965FE, 2966FE

= −5 V,

= −0.1 mA

Input voltage (OFF)

Transition frequency

I (OFF)

= −10 V,

= −5 mA

RN2961FE~2966FE

⎯

200

⎯

MHz

Collector output

capacitance

= −10 V, I = 0,

f = 1 MHz

RN2961FE

RN2962FE

3.29

4.7

6.11

RN2963FE

15.4

32.9

1.54

3.29

0.9

28.6

61.1

2.86

6.11

1.1

Input resistor

Resistor ratio

⎯

kΩ

RN2964FE

RN2965FE

2.2

4.7

1.0

RN2966FE

RN2961FE~2964FE

RN2965FE

R1/R2

0.0421 0.0468 0.0515

0.09 0.1 0.11

RN2966FE

2004-07-01

RN2961FE~RN2966FE

RN2962FE

RN2961FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

2004-07-01

RN2961FE~RN2966FE

RN2962FE

RN2961FE

RN2963FE

RN2964FE

RN2966FE

RN2965FE

2004-07-01

RN2961FE~RN2966FE

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

2004-07-01

RN2961FE~RN2966FE

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

2004-07-01

RN2961FE~RN2966FE

Type Name

RN2961FE

Marking

Type name

Y Y A

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

Y Y B

Y Y C

Y Y D

Y Y E

Y Y F

2004-07-01

RN2961FE~RN2966FE

RESTRICTIONS ON PRODUCT USE

030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced

and sold, under any law and regulations.

2004-07-01

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