RN4609 [TOSHIBA]

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process); PNP硅外延型(厘过程) NPN硅外延式( PCT程序)
RN4609
型号: RN4609
厂家: TOSHIBA    TOSHIBA
描述:

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
PNP硅外延型(厘过程) NPN硅外延式( PCT程序)

PC
文件: 总5页 (文件大小:409K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RN4609  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4609  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
z Including two devices in SM6 (super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 47k  
R2: 22kΩ  
(Q1, Q2 Common)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
EIAJ  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
TOSHIBA  
Weight: 0.015g  
2-3N1A  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
15  
V
I
100  
mA  
C
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
15  
V
I
100  
mA  
C
1
2007-11-01  
RN4609  
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
P
*
300  
150  
mW  
°C  
C
T
j
Storage temperature range  
T
55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Marking  
Equivalent Circuit (Top View)  
2
2007-11-01  
RN4609  
Q1 Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
I
I
V
V
V
V
100  
500  
0.311  
CBO  
CB  
CE  
EB  
CE  
E
Collector cut-off current  
= 50V, I = 0  
CEO  
B
Emitter cut-off current  
DC current gain  
I
= 15V, I = 0  
0.167  
70  
mA  
EBO  
C
h
= 5V, I = 10mA  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Input voltage (ON)  
V
I
= 5mA, I = 0.25mA  
0.1  
0.3  
5.8  
2.6  
V
C
B
V
V
V
V
V
= 0.2V, I = 5mA  
2.2  
1.5  
V
I (ON)  
CE  
CE  
CE  
CB  
C
Input voltage (OFF)  
V
= 5V, I = 0.1mA  
V
I (OFF)  
C
f
= 10V, I = 5mA  
Transition frequency  
200  
3
MHz  
pF  
T
C
C
ob  
Collector output capacitance  
= 10V, I = 0  
6
E
Q2 Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
nA  
I
I
V
V
V
V
= 50V, I = 0  
100  
500  
0.311  
CBO  
CB  
CE  
EB  
CE  
E
Collector cut-off current  
= 50V, I = 0  
CEO  
B
Emitter cut-off current  
DC current gain  
I
= 15V, I = 0  
0.167  
70  
mA  
EBO  
C
h
= 5V, I = 10mA  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Input voltage (ON)  
V
I
= 5mA, I = 0.25mA  
0.1  
0.3  
5.8  
2.6  
V
C
B
V
V
V
V
V
= 0.2V, I = 5mA  
2.2  
1.5  
V
I (ON)  
CE  
CE  
CE  
CB  
C
Input voltage (OFF)  
V
= 5V, I = 0.1mA  
C
V
I (OFF)  
f
= 10V, I = 5mA  
C
Transition frequency  
250  
3
MHz  
pF  
T
C
ob  
= 10V, I = 0, f = 1 MHz  
E
Collector output capacitance  
6
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Input resistor  
Resistor ratio  
R1  
32.9  
1.92  
47  
61.1  
2.35  
kΩ  
R1/R2  
2.14  
3
2007-11-01  
RN4609  
4
2007-11-01  
RN4609  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
5
2007-11-01  

相关型号:

RN4609(TE85L)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
TOSHIBA

RN4609TE85L

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN4609TE85N

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN4609TE85R

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN4610

SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS
TOSHIBA

RN4610(TE85L)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
TOSHIBA

RN4610(TE85L,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
TOSHIBA

RN4610(TE85R)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
TOSHIBA

RN4610TE85L

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN4611

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
TOSHIBA

RN4611(TE85L,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
TOSHIBA

RN4611(TE85R)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
TOSHIBA