RN47A4 [TOSHIBA]
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type; 东芝晶体管硅NPN · PNP外延型
| 型号： | RN47A4 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN47A4
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A4
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
·
·
Two devices are incorporated into an Ultra-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
C
R1
R1
B
B
JEDEC
JEITA
―
E
E
―
―
Q1
TOSHIBA
Weight:
R1: 47 kΩ, R2: 47 kΩ
Q2
g (typ.)
R1: 10 kΩ, R2: 47 kΩ
Q1: RN1104F
Q2: RN2107F
Marking
Equivalent Circuit (top view)
5
1
4
3
5
4
Q2
2 4
2
Q1
1
2
3
1
2002-01-30
RN47A4
Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
50
50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
10
V
I
100
mA
C
Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
-50
-50
-6
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
I
-100
mA
C
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
P
(Note)
200
150
mW
°C
C
T
j
Storage temperature range
T
-55~150
°C
stg
Note: Total rating
2
2002-01-30
RN47A4
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
V
V
¾
¾
¾
¾
100
500
0.15
¾
CBO
CEO
CB
CE
EB
CE
E
nA
= 50 V, I = 0
B
Emitter cut-off current
DC current gain
I
= 10 V, I = 0
0.082
80
¾
mA
EBO
C
h
= 5 V, I = 10 mA
¾
FE
CE (sat)
C
Collector-emitter saturation voltage
Input voltage (ON)
V
I
= 5 mA, I = 0.25 mA
¾
0.1
¾
0.3
5.0
1.5
¾
V
V
C
B
V
V
V
V
V
= 0.2 V, I = 5 mA
1.5
1.0
¾
I (ON)
CE
CE
CE
CB
C
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
V
= 5 V, I = 0.1 mA
¾
V
I (OFF)
C
f
= 10 V, I = 5 mA
250
3
MHz
pF
kW
T
C
C
= 10 V, I = 0, f = 1 MHz
¾
6
ob
E
R1
R1/R2
¾
32.9
0.8
47
1.0
61.1
1.2
Resistor ratio
¾
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
I
V
V
V
V
= -50 V, I = 0
¾
¾
¾
¾
-100
-500
-0.15
¾
CBO
CEO
CB
CE
EB
CE
E
nA
= -50 V, I = 0
B
Emitter cut-off current
DC current gain
I
= -6 V, I = 0
-0.081
50
¾
mA
EBO
C
h
= -5 V, I = -10 mA
¾
FE
CE (sat)
C
Collector-emitter saturation voltage
Input voltage (ON)
V
I
= -5 mA, I = -0.25 mA
¾
-0.1
¾
-0.3
-1.8
-1.0
¾
V
V
C
B
V
V
V
V
V
= -0.2 V, I = -5 mA
-0.7
-0.5
¾
I (ON)
CE
CE
CE
CB
C
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
V
= -5 V, I = -0.1 mA
¾
V
I (OFF)
C
f
= -10 V, I = -5 mA
200
3
MHz
pF
kW
T
C
C
= -10 V, I = 0, f = 1 MHz
¾
6
ob
E
R1
R1/R2
¾
7
10
13
Resistor ratio
¾
0.171 0.213 0.255
3
2002-01-30
RN47A4
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
4
2002-01-30
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