S8850A [TOSHIBA]

MICROWAVE POWER GAAS FET; 微波功率GaAs FET
S8850A
型号: S8850A
厂家: TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述:

MICROWAVE POWER GAAS FET
微波功率GaAs FET

微波
文件: 总4页 (文件大小:159K)
下载:  下载PDF数据表文档文件

S8851

MICROWAVE POWER GaAs FET

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28 TOSHIBA

S8851

MICROWAVE POWER GaAs FET

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15 TOSHIBA

S8855

SUITABLE FOR Ku-BAND AMPLIFIER

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38 TOSHIBA

S8861

T1/CEPT/ISDN-PRI TRANSFORMER

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16 BOTHHAND

S8862

T1/CEPT/ISDN-PRI TRANSFORMER

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25 BOTHHAND

S8863

T1/CEPT/ISDN-PRI TRANSFORMER

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22 BOTHHAND

S8865

Photodiode array combined with signal processing circuit chip

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34 HAMAMATSU

S8865-128

Photodiode array combined with signal processing circuit chip

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21 HAMAMATSU

S8865-128G

Photodiode array combined with signal processing IC for X-ray detection

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27 HAMAMATSU

S8865-256

Photodiode array combined with signal processing circuit chip

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13 HAMAMATSU

S8865-256G

Photodiode array combined with signal processing circuit chip

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15 HAMAMATSU

S8865-256G

Photodiode array combined with signal processing IC for X-ray detection

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19 HAMAMATSU

S8865-64

Photodiode array combined with signal processing circuit chip

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25 HAMAMATSU

S8865-64G

Photodiode array combined with signal processing IC for X-ray detection

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36 HAMAMATSU

S8865-64G_15

Photodiode array combined with signal processing IC for X-ray detection

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0 HAMAMATSU