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S8851 [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET

S8851


元器件型号：	S8851
生产厂家：	TOSHIBA SEMICONDUCTOR
描述和应用：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 微波
PDF文件：	总5页 (文件大小：166K)
下载文档：	下载PDF数据表文档文件
型号参数：S8851参数

S8855

SUITABLE FOR Ku-BAND AMPLIFIER

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38 TOSHIBA

S8861

T1/CEPT/ISDN-PRI TRANSFORMER

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16 BOTHHAND

S8862

T1/CEPT/ISDN-PRI TRANSFORMER

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25 BOTHHAND

S8863

T1/CEPT/ISDN-PRI TRANSFORMER

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22 BOTHHAND

S8865

Photodiode array combined with signal processing circuit chip

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34 HAMAMATSU

S8865-128

Photodiode array combined with signal processing circuit chip

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21 HAMAMATSU

S8865-128G

Photodiode array combined with signal processing IC for X-ray detection

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27 HAMAMATSU

S8865-256

Photodiode array combined with signal processing circuit chip

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13 HAMAMATSU

S8865-256G

Photodiode array combined with signal processing circuit chip

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15 HAMAMATSU

S8865-256G

Photodiode array combined with signal processing IC for X-ray detection

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19 HAMAMATSU

S8865-64

Photodiode array combined with signal processing circuit chip

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25 HAMAMATSU

S8865-64G

Photodiode array combined with signal processing IC for X-ray detection

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36 HAMAMATSU

S8865-64G_15

Photodiode array combined with signal processing IC for X-ray detection

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0 HAMAMATSU

S8866-128

Analog Circuit

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0 HAMAMATSU

S8866-128-02

Analog Circuit,

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0 HAMAMATSU

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