SM8JZ47A [TOSHIBA]

AC POWER CONTROL APPLICATIONS; AC电源控制应用
SM8JZ47A
型号: SM8JZ47A
厂家: TOSHIBA    TOSHIBA
描述:

AC POWER CONTROL APPLICATIONS
AC电源控制应用

栅极 触发装置 三端双向交流开关 功率控制 局域网
文件: 总5页 (文件大小:225K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE  
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
AC POWER CONTROL APPLICATIONS  
Unit: mm  
l Repetitive Peak OffState Voltage : V  
= 400, 600V  
DRM  
l R.M.S ONState Current  
l High Commutating (dv / dt)  
l Isolation Voltage  
: I  
= 8A  
T (RMS)  
: V  
ISOL  
= 1500V AC  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
RATING  
400  
UNIT  
V
SM8GZ47  
SM8GZ47A  
Repetitive Peak  
V
DRM  
OffState Voltage  
SM8JZ47  
600  
SM8JZ47A  
R.M.S OnState Current  
I
8
A
A
T (RMS)  
(Full Sine Waveform Tc = 83°C)  
80 (50Hz)  
88 (60Hz)  
32  
Peak One Cycle Surge On-State  
I
TSM  
Current (NonRepetitive)  
JEDEC  
JEITA  
2
2
2
I t Limit Value  
I t  
A s  
TOSHIBA  
Weight: 1.7g  
1310H1A  
Critical Rate of Rise of OnState  
di / dt  
50  
A / µs  
Current  
(Note 1)  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Voltage  
P
5
0.5  
W
W
V
GM  
P
G (AV)  
V
I
10  
GM  
Note 1: di / dt Test Condition  
Peak Gate Current  
2
A
V
I
= 0.5×Rated  
GM  
DRM  
12A  
Junction Temperature  
Storage Temperature Range  
Isolation Voltage (AC, t = 1min.)  
T
j
40~125  
40~125  
1500  
°C  
°C  
V
TM  
t
t
10µs  
250ns  
gw  
gr  
T
stg  
V
ISOL  
i
= I ×2.0  
GP  
GT  
1
2001-07-13  
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
= Rated  
DRM  
MIN  
TYP.  
MAX  
20  
UNIT  
µA  
Repetitive Peak OffState  
I
V
V
DRM  
Current  
I
T2 (+), Gate (+)  
0.2  
1.5  
1.5  
1.5  
II  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
T2 (+), Gate (+)  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
T2 (+), Gate (+)  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
= 12V  
D
Gate Trigger Voltage  
V
V
GT  
R = 20Ω  
L
III  
IV  
I
30  
30  
30  
II  
SM8GZ47  
SM8JZ47  
III  
IV  
I
Gate Trigger  
Current  
V = 12V  
D
I
mA  
GT  
R = 20Ω  
L
20  
20  
20  
II  
SM8GZ47A  
SM8JZ47A  
III  
IV  
Peak OnState Voltage  
Gate NonTrigger Voltage  
Holding Current  
V
V
I
= 12A  
TM  
1.5  
V
V
TM  
V
V
= Rated, Tc = 125°C  
GD  
D
D
I
= 12V, I  
= 1A  
50  
3.6  
mA  
H
TM  
Thermal Resistance  
R
Junction to Case, AC  
°C / W  
th (jc)  
SM8GZ47  
10  
4
300  
200  
Critical Rate of  
Rise of OffState  
Voltage  
SM8JZ47  
V
= Rated, T = 125°C  
DRM  
j
dv / dt  
V / µs  
V / µs  
Exponential Rise  
SM8GZ47A  
SM8JZ47A  
SM8GZ47  
SM8JZ47  
Critical Rate of  
Rise of OffState  
Voltage at  
V
= 400V, T = 125°C  
j
DRM  
(dv / dt) c  
(di /dt) c = 4.5A / ms  
SM8GZ47A  
SM8JZ47A  
Commutation  
MARKING  
* NUMBER  
SYMBOL  
MARK  
* 1  
* 2  
* 3  
TOSHIBA PRODUCT MARK  
SM8GZ47, SM8GZ47A  
M8GZ47  
M8JZ47  
A
TYPE  
SM8JZ47, SM8JZ47A  
SM8GZ47A, SM8JZ47A  
Example  
8A : January 1998  
8B : Febrary 1998  
8L : December 1998  
* 4  
2
2001-07-13  
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
3
2001-07-13  
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
4
2001-07-13  
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2001-07-13  

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