SSM3J112TU(TE85L) [TOSHIBA]

MOSFETs Vds=-30V Id=-1.1A 3Pin;


型号：	SSM3J112TU(TE85L)
厂家：	TOSHIBA
描述：	MOSFETs Vds=-30V Id=-1.1A 3Pin
文件：	总6页 (文件大小：142K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSM3J112TU

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

SSM3J112TU

High Speed Switching Applications

Unit: mm

•

4V drive

Low on-resistance:

= 790mΩ (max) (@V

= 390mΩ (max) (@V

= −4 V)

2.1±0.1

1.7±0.1

= −10 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

−30

± 20

Gate-Source voltage

GSS

−1.1

Drain current

Pulse

−2.2

800

D (Note 1)

D (Note 2)

Drain power dissipation

Channel temperature

500

150

°C

Storage temperature range

−55 to 150

1: Gate

stg

2: Source

3: Drain

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

UFM

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

Note 1: Mounted on ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)

Note 2: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

= −1 mA, V

= 0

−30

−15

⎯

(BR) DSS

(BR) DSX

Drain-Source breakdown voltage

= +20 V

Drain cut-off current

= −30 V, V = 0

⎯

−1

μA

DSS

GSS

Gate leakage current

Gate threshold voltage

Forward transfer admittance

= ±16V, V = 0

⎯

±1

= −5 V, I = −0.1 mA

−0.8

0.5

⎯

−1.8

⎯

⏐Y ⏐

= −5 V, I =− 0.5 A

(Note3)

1.0

310

610

= −0.5 A, V

= −10 V

= −4 V

390

790

⎯

Drain-Source on-resistance

mΩ

DS (ON)

= −0.5 A, V

⎯

Input capacitance

= −15 V, V

= 0, f = 1 MHz

⎯

iss

Output capacitance

⎯

oss

Reverse transfer capacitance

⎯

rss

Turn-on time

Switching time

= −15 V, I = −0.5 A,

⎯

= 0 to −4 V, R = 10 Ω

⎯

Turn-off time

8.5

0.85

off

⎯

Drain-Source forward voltage

Note3: Pulse test

= 1.1A, V = 0 V

(Note3)

1.2

DSF

Start of commercial production

2005-02

2014-03-01

SSM3J112TU

Switching Time Test Circuit

(a) Test circuit

(b) V

0 V

OUT

10%

90%

−4V

−4 V

10 μs

OUT

DS (ON)

90%

10%

= -10 V

= 4.7 Ω

Duty ≤ 1%

: t , t < 5 ns

r f

Common Source

off

Ta = 25°C

Marking

Equivalent Circuit (top view)

JJ5

Precaution

can be expressed as the voltage between gate and source when the low operating current value is I =−0.1mA for

this product. For normal switching operation, V

requires a higher voltage than V and V

requires a lower

GS (off)

GS (on)

th,

voltage than V

th.

(The relationship can be established as follows: V

< V < V

)

GS (off)

GS (on)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2014-03-01

SSM3J112TU

– V

I – V

D GS

−2

−1.5

−1

−10000

−1000

−100

−10

Common Source

Ta = 25°C

Common Source

= −5 V

−4.5

−10

−4.0

−25°C

−3.5

Ta = 100°C

25°C

−3.0

−1

−0.5

= −2.5 V

−0.1

−0.01

−0.5

−1

−1.5

−2

−1

−2

−3

−4

−5

Drain-Source voltage

(V)

Gate-Source voltage

(V)

– I

– V

DS (ON)

DS (ON) GS

0.8

0.6

0.4

0.2

1.6

1.2

0.8

0.4

Common Source

= −0.5 A

Ta = 25°C

= −4 V

−10 V

Ta = 100°C

25°C

−25°C

−10

−0.5

−1.0

−1.5

−2.0

−5

−15

−20

Drain current

(A)

Gate-Source voltage

(V)

– Ta

DS (ON)

1.2

−3

−2.5

−2

Common Source

= −5 V

Common Source

= −0.5 A

= −0.1 mA

= −4.0 V

0.8

0.6

0.4

0.2

−1.5

−1

−10 V

−0.5

−25

100

125

150

−25

100

125

150

Ambient temperature Ta (°C)

2014-03-01

SSM3J112TU

|Y | – I

C – V

500

300

100

0.3

0.1

iss

oss

rss

0.01

0.03

Common Source

= −5 V

Common Source

Ta = 25°C

f = 1 MHz

Ta = 25°C

= 0 V

0.001

−1

−10

−100

−1000

−10000

−0.1

−1

−10

−100

Drain current

(mA)

Drain-Source voltage

(V)

Dynamic input characteristic

t – I

−10

−8

−6

−4

−2

300

100

Common Source

= −1 A

Ta = 25°C

Common Source

= −15 V

= 0∼ −4 V

Ta = 25°C

= 10 Ω

−12 V

off

= −24 V

−0.01

−0.03

−0.1

−0.3

−1

−3

Total gate charge

(nC)

Drain current

(A)

– V

PD - Ta

−2

1000

a: mounted on FR4 board

Common Source

(25.4mm×25.4mm×1.6mm)

Cu Pad :25.4mm×25.4mm

b:mounted on ceramic board

(25.4mm×25.4mm×0.8mm)

Cu Pad :25.4mm×25.4mm

= 0

−1.6

Ta = 25°C

800

600

400

200

−1.2

−0.8

−0.4

0.2

0.4

0.6

0.8

20 40 60 80 100 120 140 160

Ambient temperature Ta(°C)

Drain-Source voltage

(V)

2014-03-01

SSM3J112TU

Rth - tw

1000

100

Single pulse

a:Mounted on ceramic board

(25.4mm×25.4mm×0.8mm)

Cu Pad :25.4mm×25.4mm

b:Mounted on FR4 board

(25.4mm×25.4mm×1.6mm)

Cu Pad :25.4mm×25.4mm

c:Mounted on FR4 Board

(25.4mm×25.4mm×1.6mm)

Cu Pad :0.45mm×0.8mm×3

0.001

0.01

0.1

100

1000

Pulse w idth tw (S)

2014-03-01

SSM3J112TU

RESTRICTIONS ON PRODUCT USE

•

Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively "Product") without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR

APPLICATIONS.

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH

MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

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PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your

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•

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Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES

OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2014-03-01

SSM3J112TU(TE85L) [TOSHIBA]

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