SSM3J305T(TE85L) [TOSHIBA]

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,1.7A I(D),TO-236AB;
SSM3J305T(TE85L)
型号: SSM3J305T(TE85L)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,1.7A I(D),TO-236AB

文件: 总6页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM3J305T  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM3J305T  
High-Speed Switching Applications  
Unit: mm  
4 V drive  
Low ON-resistance:  
R
R
= 477 m(max) (@V  
= 237 m(max) (@V  
= 4 V)  
= 10 V)  
on  
GS  
GS  
on  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
30  
± 20  
V
V
DS  
Gate–source voltage  
V
GSS  
DC  
I
1.7  
D
Drain current  
A
Pulse  
I
3.4  
DP  
D (Note 1)  
Drain power dissipation  
Channel temperature  
P
700  
mW  
°C  
T
150  
ch  
Storage temperature range  
T
55 to 150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-3S1A  
Weight: 10 mg (typ.)  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= −1 mA, V  
= −1 mA, V  
= 0  
30  
(BR) DSS  
(BR) DSX  
D
D
GS  
Drain–source breakdown voltage  
V
V
= + 20 V  
15  
1  
GS  
Drain cutoff current  
I
V
V
V
V
= −30 V, V  
= ±16 V, V  
= 0  
= 0  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
±1  
GSS  
V
= −5 V, I = −1 mA  
1.2  
0.8  
2.6  
th  
D
Y ⏐  
= −5 V, I =− 0.65 A  
(Note 2)  
(Note 2)  
(Note 2)  
1.5  
177  
357  
137  
39  
S
fs  
D
I
I
= −0.65 A, V  
= −10 V  
237  
477  
D
D
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= −0.4 A, V  
= −4 V  
GS  
Input capacitance  
C
C
iss  
V
= −15 V, V  
= 0, f = 1 MHz  
GS  
pF  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
DS  
oss  
C
20  
rss  
Q
g
1.3  
0.7  
0.6  
V
V
= 15 V, I = 1.7 A  
DS  
GS  
DS  
nC  
GateSource Charge  
GateDrain Charge  
Q
gs  
Q
gd  
= 4 V  
Turn-on time  
Switching time  
t
t
15  
14  
on  
off  
V
V
= −15 V, I = −0.65 A,  
D
DD  
GS  
ns  
V
= 0 to 4 V, R = 10  
G
Turn-off time  
Drain–source forward voltage  
V
I
= 1.7 A, V = 0 V  
GS  
(Note 2)  
0.85  
1.2  
DSF  
D
Note 2: Pulse test  
1
2007-11-01  
SSM3J305T  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
(c) V  
IN  
0 V  
OUT  
10%  
0
IN  
90%  
4 V  
R
4 V  
L
10 μs  
V
DD  
V
OUT  
DS (ON)  
90%  
10%  
V
= −15 V  
= 10 Ω  
DD  
R
G
<
D.U. 1%  
V
=
DD  
t
t
f
r
V
: t , t < 5 ns  
IN  
r
f
Common Source  
t
t
off  
on  
Ta = 25°C  
Marking  
Equivalent Circuit (top view)  
3
3
JJA  
1
2
1
2
Precaution  
V
th  
can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for  
D
this product. For normal switching operation, V  
requires a higher voltage than V and V  
requires a lower  
GS (off)  
GS (on)  
th  
voltage than V  
th.  
(The relationship can be established as follows: V  
< V < V  
)
GS (off)  
th  
GS (on).  
Take this into consideration when using the device.  
Handling Precaution  
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is  
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that  
come into direct contact with devices should be made of antistatic materials.  
2
2007-11-01  
SSM3J305T  
I
– V  
DS  
D
I
– V  
GS  
D
–3.0  
–2.5  
–10  
–1  
Common Source  
–10 V  
–6 V  
VDS = −5 V  
–4 V  
–2.0  
–1.5  
–1.0  
–0.5  
–3.6 V  
–0.1  
Ta = 100 °C  
25 °C  
–0.01  
VGS = –3.3 V  
25 °C  
–0.001  
Common Source  
Ta = 25°C  
0
–0.0001  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1  
0
–0.5 –1.0 –1.5  
–2.0 –2.5 –3.0 –3.5 –4.0  
Drain–source voltage  
V
(V)  
DS  
Gate–source voltage  
V
(V)  
GS  
R
– I  
D
R
– V  
DS (ON)  
DS (ON)  
GS  
1000  
900  
1000  
900  
I
= −0.65 A  
D
Common Source  
Common Source  
Ta = 25°C  
800  
700  
800  
700  
600  
500  
400  
600  
500  
25 °C  
VGS = – 4.0V  
400  
300  
Ta =100 °C  
300  
200  
200  
– 10 V  
25 °C  
100  
0
100  
0
0
–2  
–4  
–6  
–8  
–10  
–2.0  
0
–1.5  
–2.5  
–3.0  
–0.5  
–1.0  
Gate–source voltage  
V
(V)  
GS  
Drain current  
I
(A)  
D
R
Ta  
V
Ta  
th  
DS (ON)  
1000  
800  
–2.0  
–1.5  
Common Source  
600  
–1.0  
ID = −0.4 A / VGS = –4.0 V  
400  
200  
–0.5  
0
Common source  
–0.65 A / –10 V  
V
= −5 V  
DS  
I
= −1 mA  
D
0
50  
0
50  
100  
150  
50  
0
50  
100  
150  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
3
2007-11-01  
SSM3J305T  
I
– V  
DS  
DR  
|Y | – I  
fs  
D
10  
3
10  
1
Common Source  
VGS = 0 V  
D
Common Source  
= −5 V  
V
DS  
Ta = 25°C  
Ta = 25°C  
I
DR  
G
S
0.1  
1
Ta = 100 °C  
0.01  
.3  
25 °C  
0.001  
25 °C  
0.6 0.8  
0.0001  
0.1  
–0.01  
–1  
D
–0.1  
–10  
0
0.2  
0.4  
1.0  
1.2  
Drain current  
I
(A)  
Drain–source voltage  
V
(V)  
DS  
t – I  
D
C – V  
DS  
600  
100  
1000  
toff  
500  
300  
tf  
Ciss  
100  
ton  
10  
50  
30  
Coss  
Crss  
tr  
10  
–0.1  
1
–0.01  
–1  
–10  
–100  
–0.1  
–1  
–10  
Drain current  
I
(A)  
D
Drain–source voltage  
V
(V)  
DS  
Dynamic Input Characteristic  
10  
8  
Common Source  
= −1.7A  
I
D
Ta = 25°C  
6  
4  
VDD=15V  
VDD=24V  
2  
0
0
1
2
3
Total Gate Charge Qg (nC)  
4
2007-11-01  
SSM3J305T  
r
th  
– t  
P – T  
D a  
w
1000  
100  
1000  
a: Mounted on FR4 board  
(25.4mm × 25.4mm × 1.6t ,  
Cu Pad : 645 mm2)  
b: Mounted on FR4 board  
(25.4mm × 25.4mm × 1.6t ,  
Cu Pad : 0.8 mm2×3)  
b
800  
600  
400  
a
b
a
Single Pulse  
10  
a: Mounted on FR4 board  
(25.4mm × 25.4mm × 1.6t ,  
Cu Pad : 645 mm2)  
b: Mounted on FR4 board  
(25.4mm × 25.4mm × 1.6t ,  
Cu Pad : 0.8 mm2×3)  
200  
0
1
0.001  
-40 -20  
0
20  
40  
60 80  
100 120 140 160  
0.01  
0.1  
10  
100  
1000  
1
Ambient temperature  
T
(°C)  
a
Pulse width  
t
(s)  
w
5
2007-11-01  
SSM3J305T  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2007-11-01  

相关型号:

SSM3J305T(TE85L,F)

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,1.7A I(D),TO-236AB
TOSHIBA

SSM3J306T

Power management switch Applications
TOSHIBA

SSM3J306T(TE85L,F)

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.4A I(D),SOT-346
TOSHIBA

SSM3J307T

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)
TOSHIBA

SSM3J312T

Bipolar Small-Signal Transistors
TOSHIBA

SSM3J313T

Bipolar Small-Signal Transistors
TOSHIBA

SSM3J314T

Bipolar Small-Signal Transistors
TOSHIBA

SSM3J317T

Power Management Switch Applications High-Speed Switching Applications
TOSHIBA

SSM3J317T(TE85L)

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.6A I(D),TO-236AA
TOSHIBA

SSM3J317T(TE85L,F)

MOSFET P-CH 20V 3.6A TSM
TOSHIBA

SSM3J321T

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
TOSHIBA

SSM3J321T(TE85L)

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.2A I(D),SOT-23VAR
TOSHIBA