SSM3J35CTC [TOSHIBA]

Small Signal MOS FET (Single);


型号：	SSM3J35CTC
厂家：	TOSHIBA
描述：	Small Signal MOS FET (Single) 开关晶体管
文件：	总8页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSM3J35CTC

MOSFETs Silicon P-Channel MOS

SSM3J35CTC

1. Applications

•

Analog Switches

2. Features

(1) 1.2 V drive

(2) ESD(HBM) level 2 kV

(3) Low drain-source on-resistance

: RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V)

RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V)

RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V)

RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V)

RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V)

3. Packaging and Pin Assignment

CST3C

Start of commercial production

2016-01

2016-02-12

Rev.1.0

SSM3J35CTC

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-20

±10

(Note 1)

(Note 2)

-250

IDP

-600

500

Channel temperature

Storage temperature

Tch

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150 .

Note 2: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to

the board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

2016-02-12

Rev.1.0

SSM3J35CTC

5. Electrical Characteristics

5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VDS = 0 V, VGS = ±10 V



±1

-1

µA

Drain cut-off current

VDS = -20 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = -1 mA, VGS = 0 V

-20

-10

-0.3



(Note 1) V(BR)DSX ID = -1 mA, VGS = 10 V



(Note 2)

Vth

VDS = -10 V, ID = -100 µA



-1

Drain-source on-resistance

(Note 3) RDS(ON) ID = -10 mA, VGS = -1.2 V

ID = -20 mA, VGS = -1.5 V

3.2

2.3

2.0

1.5

1.1

430

4.0

2.9

2.1

1.4



Ω



ID = -50 mA, VGS = -1.8 V



ID = -150 mA, VGS = -2.5 V



ID = -150 mA, VGS = -4.5 V



Forward transfer admittance

(Note 3)

|Yfs|

VDS = -10 V, ID = -100 mA



Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-100 µA

for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

VDS = -10 V, VGS = 0 V,

f = 1 MHz



Reverse transfer capacitance

Output capacitance

Switching time (rise time)

VDD = -10 V, ID = -50 mA,

145

420

VGS = 0 to -4.5 V, RG = 10 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source, See Chapter 5.3.

Switching time (turn-on delay time)

Switching time (fall time)

td(on)

Switching time (turn-off delay time)

td(off)

5.3. Switching Time Test Circuit

Fig. 5.3.1 Switching Time Test Circuit

Fig. 5.3.2 Input Waveform/Output Waveform

2016-02-12

Rev.1.0

SSM3J35CTC

5.4. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Diode forward voltage

Symbol

Test Condition

Min

Typ.

0.83

Max

1.2

Unit

(Note 1)

VDSF

ID = 100 mA, VGS = 0 V



Note 1: Pulse measurement.

6. Marking

7. Equivalent Circuit

2016-02-12

Rev.1.0

SSM3J35CTC

8. Characteristics Curves (Note)

Fig. 8.1 ID - VDS

Fig. 8.2 ID - VGS

Fig. 8.3 RDS(ON) - VGS

Fig. 8.4 RDS(ON) - VGS

Fig. 8.5 RDS(ON) - Ta

Fig. 8.6 RDS(ON) - ID

2016-02-12

Rev.1.0

SSM3J35CTC

Fig. 8.7 Vth - Ta

Fig. 8.8 IDR - VDS

Fig. 8.9 C - VDS

Fig. 8.10 t - ID

Fig. 8.11 PD - Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2016-02-12

Rev.1.0

SSM3J35CTC

Package Dimensions

Unit: mm

Weight: 0.63 mg (typ.)

Package Name(s)

TOSHIBA: 2-1W1A

Nickname: CST3C

2016-02-12

Rev.1.0

SSM3J35CTC

RESTRICTIONS ON PRODUCT USE

•

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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written permission, reproduction is permissible only if reproduction is without alteration/omission.

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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

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applicable laws or regulations.

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Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all

applicable export laws and regulations.

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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2016-02-12

Rev.1.0

SSM3J35CTC [TOSHIBA]

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