SSM3K01T(TE85L,F) [TOSHIBA]
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,3.2A I(D),TO-236;
| 型号： | SSM3K01T(TE85L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,3.2A I(D),TO-236 |
| 文件： | 总5页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Unit: mm
•
•
Small Package
Low on Resistance: R = 120 mΩ (max) (@V
= 4 V)
= 2.5 V)
on
GS
GS
: R = 150 mΩ (max) (@V
on
•
Low Gate Threshold Voltage: V = 0.6 to 1.1 V
th
(@V
= 3 V, I = 0.1 mA)
D
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
30
±10
3.2
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
I
DP
(Note 2)
Pulse
6.4
P
D
Drain power dissipation (Ta = 25°C)
1250
mW
(Note 1)
Channel temperature
T
150
°C
°C
ch
JEDEC
JEITA
―
―
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2, t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
and the drain power dissipation P vary according to
th (ch-a)
D
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Start of commercial production
2000-04
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SSM3K01T
Marking
Equivalent Circuit
3
3
K W
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±10 V, V
= 0
⎯
30
⎯
0.6
2.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±1
⎯
μA
V
GSS
GS
I = 1 mA, V
D
DS
Drain-Source breakdown voltage
Drain Cut-off current
V
= 0
(BR) DSS
GS
= 30 V, V
I
V
V
V
= 0
⎯
1
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
V
= 3 V, I = 0.1 mA
⎯
1.1
⎯
th
D
Forward transfer admittance
Drain-Source ON resistance
Drain-Source ON resistance
Input capacitance
|Y |
fs
= 3 V, I = 1.6 A
(Note3)
(Note3)
(Note3)
5.2
85
S
D
R
I
I
= 1.6 A, V
= 4 V
120
150
⎯
mΩ
mΩ
pF
pF
pF
DS (ON)
DS (ON)
D
D
GS
GS
R
= 1.3 A, V
= 2.5 V
115
152
41
C
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
iss
rss
oss
on
DS
DS
DS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
C
t
102
45
⎯
Turn-on time
Turn-off time
V
V
= 15 V, I = 0.5 A
⎯
DD
GS
D
Switching time
nS
= 0 to 2.5 V, R = 4.7 Ω
G
t
69
⎯
off
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
2.5 V
10 μs
90%
(b) V
IN
V
= 15 V
= 4.7 Ω
DD
I
D
2.5 V
0
V
GS
OUT
R
10%
G
IN
0
D.U.≤ 1%
: t , t < 5 ns
V
V
DD
IN
r f
10%
90%
(c) V
OUT
COMMON SOURCE
V
Ta = 25°C
DS
V
DS (ON)
V
DD
t
t
f
r
t
t
off
on
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = 100 μA for
D
this product. For normal switching operation, V
requires higher voltage than V and V
requires
GS (on)
th
GS (off)
lower voltage than V
.
th
(relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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SSM3K01T
I
– V
I
– V
GS
D
DS
D
4
3.5
3
10000
1000
100
10
4.0
2.5
2.1
Common Source
10
Common Source
Ta = 25°C
V
= 3 V
DS
100°C
Ta = 25°C
2.5
2
1.9 V
1.7 V
−25°C
1.5
1
1
V
= 1.5 V
0.1
GS
0.5
0
0.01
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
Drain-Source voltage
V
DS
(V)
Gate-Source voltage
V
(V)
GS
R
– I
R
– Ta
DS (ON)
D
DS (ON)
200
160
120
80
250
200
150
100
50
Common Source
Common Source
Ta = 25°C
V
= 2.5 V
V
= 2.5 V, I = 1.3 A
GS D
GS
V
= 4 V
GS
V
= 4 V, I = 1.6 A
D
GS
40
0
0
0
−50
1
2
3
4
5
−25
0
25
50
75
100
125
150
Drain current
I
(A)
Ambient temperature Ta (°C)
D
|Y | – I
fs
C – V
DS
D
10
1000
Common Source
Common Source
V
= 0
GS
V
= 3 V
DS
f = 1 MHz
Ta = 25°C
Ta = 25°C
C
iss
1
100
C
oss
C
rss
0.1
0.01
10
0.1
0.1
1
10
1
10
100
Drain current
I
(A)
Drain-Source voltage
V
DS
(V)
D
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SSM3K01T
t – I
P – Ta
D
D
1000
100
10
1.5
1.25
1
Common Source
Mounted on FR4 board
V
V
= 15 V
= 0~2.5 V
= 4.7 Ω
t = 10 s
DD
(25.4 mm × 25.4 mm × 1.6 t,
2
GS
Cu Pad: 645 mm )
R
G
Ta = 25°C
0.75
0.5
0.25
0
DC
t
off
t
f
t
on
t
r
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
0.01
0.1
1
Drain current
I
(A)
D
Safe operating area
10
I
max (pulsed)
D
1 ms*
I
max (continuous)
D
10 ms*
1
DC operation
10 s*
Ta = 25°C
Mounted on FR4 board
(25.4 mm × 25.4 mm
0.1
× 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
V
DSS
max
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
10
100
Drain-source voltage
V
DS
(V)
r
th
– tw
1000
100
10
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
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SSM3K01T
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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