SSM3K131TU,LF [TOSHIBA]

Small Signal Field-Effect Transistor;
SSM3K131TU,LF
型号: SSM3K131TU,LF
厂家: TOSHIBA    TOSHIBA
描述:

Small Signal Field-Effect Transistor

文件: 总6页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM3K131TU  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS)  
SSM3K131TU  
High-Speed Switching Applications  
Unit: mm  
4.5-V drive  
Low ON-resistance : R = 41.5 mΩ (max) (@V  
= 4.5 V)  
= 10 V)  
on  
GS  
GS  
2.1±0.1  
1.7±0.1  
: R = 27.6 mΩ (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
1
2
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
30  
Unit  
V
3
V
V
DSS  
Gate-Source voltage  
±20  
V
GSS  
DC  
I
I
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
t = 10 s  
6.0  
D
Drain current  
A
Pulse  
12.0  
DP  
P
800  
D
D
Drain power dissipation  
mW  
P
500  
1000  
150  
Channel temperature  
T
ch  
°C  
°C  
1: Gate  
2: Source  
3: Drain  
Storage temperature range  
T
stg  
55 to 150  
UFM  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/  
voltage, etc.) are within the absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
TOSHIBA  
2-2U1A  
Weight: 6.6mg (typ.)  
Note 1: The junction temperature should not exceed 150°C during use.  
Note 2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )  
Note 3: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )  
2
2
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 10 mA, V  
= 10 mA, V  
= 0 V  
30  
15  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= -20 V  
= 0 V  
Drain cut-off current  
I
V
V
V
V
= 30 V, V  
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 20 V, V = 0 V  
DS  
±0.1  
2.5  
V
= 5 V, I = 1 mA  
1.3  
11.5  
th  
D
Y ⏐  
= 5 V, I = 4 A  
(Note 4)  
(Note 4)  
(Note 4)  
23.0  
20.5  
27.0  
450  
120  
77  
S
fs  
D
I
I
= 4.0 A, V  
= 2.0 A, V  
= 10 V  
= 4.5 V  
27.6  
41.5  
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
Input capacitance  
C
C
iss  
V
= 15 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
DS  
oss  
C
rss  
Q
g
10.1  
7.6  
2.5  
21  
V
V
= 15 V, I = 6.0 A  
D
DS  
GS  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Q
Q
gs  
= 10 V  
gd  
Turn-on time  
Switching time  
t
t
V
V
= 15 V, I = 2.0 A,  
on  
off  
DD  
GS  
D
ns  
V
= 0 to 4.5 V, R = 10 Ω  
Turn-off time  
15  
G
Drain-Source forward voltage  
Note 4: Pulse test  
V
I
= -6.0 A, V = 0 V  
GS  
(Note 4)  
-0.85  
-1.2  
DSF  
D
Start of commercial production  
2008-09  
1
2014-03-01  
SSM3K131TU  
Switching Time Test Circuit  
(a) Test Circuit  
(b) V  
(c) V  
IN  
4.5 V  
0 V  
90%  
10%  
OUT  
4.5 V  
IN  
V
OUT  
0
DD  
10%  
90%  
10 μs  
V
DD  
V
DS (ON)  
t
f
t
r
V
= 15 V  
= 10 Ω  
DD  
R
G
t
t
off  
on  
Duty 1%  
: t , t < 5 ns  
V
IN  
r f  
Common Source  
Ta = 25°C  
Marking  
Equivalent Circuit (top view)  
3
3
KKJ  
1
2
1
2
Handling Precaution  
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is  
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that  
come into direct contact with devices should be made of antistatic materials.  
Usage Considerations  
Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1 mA for the  
th  
D
SSM3K131TU). Then, for normal switching operation, V  
must be higher than V and V must be lower than  
GS(off)  
GS(on)  
th,  
V
th.  
This relationship can be expressed as: V < V < V  
GS(off) th GS(on).  
Take this into consideration when using the device.  
2
2014-03-01  
SSM3K131TU  
I
– V  
GS  
I
– V  
D
D
DS  
12  
10  
8
100  
10  
10 V  
4.0 V  
Common Source  
= 5 V  
3.5 V  
V
DS  
4.5 V  
1
6
0.1  
0.01  
Ta = 100 °C  
V
= 3.0 V  
GS  
4
2
0
25 °C  
25 °C  
0.001  
Common Source  
Ta = 25 °C  
0.0001  
0
0.4  
0.6  
0.8  
1.0  
0.2  
0
2.0  
4.0  
Drain–source voltage  
V
(V)  
Gate–source voltage  
V
(V)  
DS  
GS  
R
– V  
R
– I  
DS (ON)  
GS  
DS (ON) D  
100  
100  
50  
0
I
=4.0 A  
Common Source  
D
Common Source  
Ta = 25°C  
50  
25 °C  
4.5 V  
Ta = 100 °C  
25 °C  
V
= 10 V  
GS  
0
0
10  
20  
0
2
4
6
8
10  
12.  
Gate–source voltage  
V
(V)  
Drain current  
I
(A)  
GS  
D
R
Ta  
DS (ON)  
V
Ta  
th  
2.0  
100  
50  
0
Common Source  
= 5 V  
Common Source  
V
DS  
I
= 1 mA  
D
1.0  
2.0A / 4.5 V  
I
= 4.0 A / V  
= 10 V  
GS  
D
0
50  
0
50  
100  
150  
50  
0
50  
100  
150  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
3
2014-03-01  
SSM3K131TU  
|Y | – I  
fs  
I
– V  
DS  
D
DR  
100  
10  
100  
30  
Common Source  
Common Source  
= 5 V  
V
= 0 V  
GS  
V
DS  
Ta = 25 °C  
D
10  
I
G
DR  
3
1
1
S
25 °C  
0.1  
0.3  
0.1  
100 °C  
25 °C  
0.01  
0.001  
0.03  
0.01  
0.01  
0.1  
100  
0.001  
1
10  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
Drain current  
I
(A)  
Drain–source voltage  
V
(V)  
D
DS  
C – V  
t – I  
DS  
D
1000  
1000  
100  
Common Source  
V
V
= 15 V  
t
DD  
GS  
off  
= 0 to 4.5 V  
t
f
C
iss  
Ta = 25 °C  
300  
100  
R
G
= 10 Ω  
C
oss  
t
on  
C
rss  
10  
30  
10  
t
Common Source  
Ta = 25 °C  
r
f = 1 MHz  
V
= 0 V  
GS  
1
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Drain current  
I
(A)  
D
Drain–source voltage  
V
(V)  
DS  
Dynamic Input Characteristic  
10  
Common Source  
= 6.0 A  
I
D
Ta = 25°C  
8
6
4
V
=15 V  
DD  
V
=24 V  
DD  
2
0
15  
0
5
10  
Total Gate Charge Qg (nC)  
4
2014-03-01  
SSM3K131TU  
R
th  
– t  
w
P
– T  
a
D
1000  
600  
100  
a: Mounted on ceramic board  
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)  
b: Mounted on FR4 board  
c
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
b
800  
600  
400  
a
a
b
10  
Single pulse  
a: Mounted on ceramic board  
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)  
b: Mounted on FR4 board  
200  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
c: Mounted on FR4 Board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 0.36 mm2×3)  
1
0.001  
0
0.01  
0.1  
1
10  
100  
600  
-40 -20  
0
20  
40  
60 80 100 120 140 160  
Pulse Width  
t
(s)  
Ambient temperature Ta (°C)  
w
5
2014-03-01  
SSM3K131TU  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively "Product") without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR  
APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for  
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,  
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
TOSHIBA sales representative.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the  
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited  
except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
6
2014-03-01  

相关型号:

SSM3K14T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TOSHIBA

SSM3K14T_07

Silicon N Channel MOS Type DC-DC Converter
TOSHIBA

SSM3K15ACT

Load Switching Applications
TOSHIBA

SSM3K15AFS

Load Switching Applications
TOSHIBA

SSM3K15AFS(TE85L)

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416VAR
TOSHIBA

SSM3K15AFS(TE85L,F)

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416VAR
TOSHIBA

SSM3K15AFU

TRANSISTOR 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, 2-2E1E, SC-70, 3 PIN, FET General Purpose Small Signal
TOSHIBA

SSM3K15AFU,LF(T

Small Signal Field-Effect Transistor
TOSHIBA

SSM3K15AMFV

Load Switching Applications
TOSHIBA

SSM3K15CT

High-Speed Switching Applications
TOSHIBA

SSM3K15F

High Speed Switching Applications
TOSHIBA

SSM3K15F(TE85L,F)

Trans MOSFET N-CH 30V 0.1A 3-Pin S-Mini T/R
TOSHIBA