SSM3K37CT [TOSHIBA]
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CST3, 2-1J1B, 3 PIN, FET General Purpose Small Signal;型号: | SSM3K37CT |
厂家: | TOSHIBA |
描述: | TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CST3, 2-1J1B, 3 PIN, FET General Purpose Small Signal 开关 晶体管 |
文件: | 总5页 (文件大小:386K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSM3K37CT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K37CT
○ High Speed Switching Applications
○ Analog Switch Applications
Unit : mm
•
•
1.5Vdrive
Low ON-resistance
R
R
R
R
= 5.60 Ω (max) (@V
= 4.05 Ω (max) (@V
= 3.02 Ω (max) (@V
= 2.20 Ω (max) (@V
= 1.5 V)
= 1.8 V)
= 2.5 V)
= 4.5 V)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
V
20
± 10
V
V
DSS
Gate-Source voltage
GSS
DC
I
200
D
Drain current
mA
Pulse
I
400
DP
Power dissipation
P (Note1)
100
mW
°C
D
Channel temperature
Storage temperature range
T
ch
150
CST3
T
stg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-1J1B
Weight: 0.75mg(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm )
2
Marking(top view)
Pin Condition (top view)
Equivalent Circuit
Polarity mark
Polarity mark (on the top)
3
1
3
1
SU
2
2
1. Gate
2. Source
3. Drain
*Electrodes: On the bottom
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2013-10-07
SSM3K37CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0 V
20
12
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= -10 V
Drain cut-off current
I
V
V
V
V
= 20 V, V
= 0 V
1
µA
µA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±10 V, V
= 0 V
±1
DS
V
= 3 V, I = 1 mA
0.35
0.14
1.0
th
D
|Y |
fs
= 3 V, I = 100 mA
(Note2)
0.28
1.65
2.16
2.66
3.07
12
S
D
I
I
I
I
= 100 mA, V
= 4.5 V (Note2)
GS
2.20
3.02
4.05
5.60
D
D
D
D
= 50 mA, V
= 20 mA, V
= 10 mA, V
= 2.5 V
(Note2)
(Note2)
(Note2)
GS
GS
GS
Drain-source ON-resistance
R
Ω
DS (ON)
= 1.8 V
= 1.5 V
Input capacitance
C
iss
Output capacitance
C
V
= 10 V, V = 0 V, f = 1 MHz
GS
5.5
4.1
18
pF
oss
DS
Reverse transfer capacitance
C
t
rss
Turn-on time
Switching time
V
V
= 10 V, I = 100 mA
on
off
DD
GS
D
ns
V
= 0 to 2.5 V, R = 50 Ω
Turn-off time
t
36
G
Drain-Source forward voltage
V
I
= -200 mA, V
= 0 V
(Note2)
-0.89
-1.2
DSF
D
GS
Note2: Pulse test
Switching Time Test Circuit
(b) V
(a) Test Circuit
IN
2.5 V
90%
V
= 10 V
= 50Ω
DD
2.5 V
0 V
OUT
R
G
10%
IN
0 V
Duty ≤ 1%
: t , t < 5 ns
V
IN
r f
V
DD
Common source
(c) V
90%
10%
OUT
10 µs
Ta = 25°C
V
DD
V
DS (ON)
t
t
f
r
t
t
off
on
Precaution
Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1mA for the
th
D
SSM3K37CT). Then, for normal switching operation, V
must be higher than V and V
th,
must be lower than
GS(off)
GS(on)
V
th.
This relationship can be expressed as: V
< V < V
GS(off) th GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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SSM3K37CT
I
– V
I – V
D GS
D
DS
500
400
1000
100
Common source
Ta = 25 °C
4.5 V
Pulse test
2.5 V
10 V
Ta = 100 °C
300
200
10
1
1.8 V
1.5 V
− 25 °C
V
= 1.2 V
GS
25 °C
100
0
0.1
Common source
V
= 3 V
DS
Pulse test
0.01
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
3.0
Drain-source voltage
V
(V)
Gate-source voltage
V
(V)
DS
GS
R
– V
GS
DS (ON)
R
– I
D
DS (ON)
6
5
6
5
I
= 100 mA
Common source
Ta = 25°C
D
Common source
Pulse test
Pulse test
4
3
4
3
1.5 V
1.8 V
2.5V
25 °C
Ta = 100 °C
− 25 °C
2
1
2
1
V
= 4.5V
GS
0
0
0
2
4
6
8
10
0
100
200
300
400
500
Gate-source voltage
V
(V)
GS
Drain current
I
(mA)
D
R
– Ta
V
– Ta
th
DS (ON)
1.0
0.5
0
5
4
3
Common source
I
= 10 mA / V
= 1.5 V
GS
D
V
= 3 V
DS
20 mA / 1.8 V
50 mA / 2.5 V
I
= 1 mA
D
2
100 mA / 4.5 V
1
0
Common source
Pulse test
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM3K37CT
I
– V
DS
DR
|Y | – I
fs
D
1000
1000
Common source
= 3 V
V
DS
Ta = 25°C
Pulse test
300
100
100
10
25 °C
Common source
V
= 0 V
GS
Pulse test
Ta =100 °C
D
30
10
1
I
G
DR
−25 °C
S
0.1
100
0
–0.5
–1.0
–1.5
1000
10
1
Drain-source voltage
V
(V)
DS
Drain current
I
(mA)
D
C – V
DS
t – I
D
1000
00
10
100
Common source
t
off
V
V
= 10 V
DD
GS
50
30
= 0 to2.5 V
Ta = 25 °C
= 50Ω
t
f
R
G
C
iss
10
t
on
C
oss
5
3
Common source
Ta = 25°C
t
r
C
rss
f = 1 MHz
V
= 0 V
GS
1
0.1
1
1
10
100
1
10
100
1000
Drain-source voltage
V
(V)
DS
Drain current
I
(mA)
D
P
– Ta
D
250
200
150
100
50
Mounted FR4 board
(10 mm × 10 mm × 1.0mm
Cu Pad: 100 mm2
)
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
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2013-10-07
SSM3K37CT
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2013-10-07
相关型号:
SSM3K37FS
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA
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