SSM5H01TU [TOSHIBA]
DC-DC Converter; DC-DC变换器
| 型号： | SSM5H01TU |
| 厂家： | 
TOSHIBA |
| 描述： | DC-DC Converter |
| 文件： | 总10页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM5H01TU
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
SSM5H01TU
DC-DC Converter
Unit: mm
•
•
Combined Nch MOSFET and Schottky Diode into one Package.
Low R and Low V
DS (ON)
F
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
30
±20
1.4
2.8
0.5
0.8
150
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
Pulse
I
(Note 2)
(Note 1)
DP
P
D
Drain power dissipation
Channel temperature
W
t = 10s
T
ch
°C
UFV
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
JEDEC
JEITA
⎯
⎯
Characteristics
Symbol
Rating
Unit
TOSHIBA
2-2R1A
Maximum (peak) reverse voltage
Reverse voltage
V
25
20
V
V
A
RM
V
Weight: 7 mg (typ.)
R
Average forward current
I
0.5
O
Peak one cycle surge forward current
(non-repetitive)
I
2 (50 Hz)
125
A
FSM
Junction temperature
T
j
°C
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Storage temperature
Operating temperature
Symbol
Rating
−55~125
−40~100
Unit
°C
T
stg
T
opr
°C
(Note 3)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1
2007-11-01
SSM5H01TU
Marking
Equivalent Circuit
5
4
5
4
KEF
2
1
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
The Channel-to-Ambient thermal resistance R
and the drain power dissipation P vary according to
D
th (ch-a)
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
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2007-11-01
SSM5H01TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0
Min
Typ.
Max
Unit
I
V
⎯
30
15
⎯
1.0
0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±1
⎯
μA
GSS
GS
DS
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
V
= -20 V
⎯
⎯
Drain Cut-off current
I
V
V
V
= 30 V, V
= 0
⎯
1
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
Forward transfer admittance
V
= 5 V, I = 0.1 mA
⎯
2.4
⎯
th
D
|Y |
fs
= 5 V, I = 0.7 A
(Note 4)
(Note 4)
(Note 4)
1.8
140
250
106
15
S
D
I
I
= 0.7 A, V
= 10 V
= 4 V
200
450
⎯
D
D
GS
GS
Drain-Source ON resistance
R
mΩ
DS (ON)
= 0.7 A, V
Input capacitance
C
V
V
V
V
V
= 15 V, V
= 15 V, V
= 15 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
C
t
28
⎯
Turn-on time
Turn-off time
= 15 V, I = 0.7 A
18
⎯
D
Switching time
ns
= 0~4 V, R = 10 Ω
t
10
⎯
G
off
Note 4: Pulse measurement
Switching Time Test Circuit
4 V
90%
(a)Test circuit
(b) V
(c) V
IN
10%
10 μs
0
V
= 15 V
= 10 Ω
DD
I
D
4 V
0
OUT
V
R
DD
G
IN
90%
10%
<
Duty 1%
OUT
V
: t , t < 5 ns
IN
r
f
Common source
V
DS (ON)
t
t
f
r
Ta = 25°C
V
t
t
off
DD
on
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = 100 μA for
D
this product. For normal switching operation, V
requires higher voltage than V and V
requires
GS (on)
th
GS (off)
lower voltage than V
.
th
(Relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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2007-11-01
SSM5H01TU
Schottky Diode
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
⎯
⎯
V
V
I
I
= 0.3 A
= 0.5 A
0.38
0.43
⎯
0.45
⎯
V
V
F (1)
F (2)
F
F
Forward voltage
Reverse current
I
V
V
= 20 V
50
μA
pF
R
R
R
Total capacitance
C
= 0 V, f = 1 MHz
46
⎯
T
Precaution
The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to
the other switching diodes. This current leakage and not proper operating temperature or voltage may cause
thermal runaway. Please take forward and reverse loss into consideration when you design.
4
2007-11-01
SSM5H01TU
MOSFET Electrical Characteristics Graph
I
– V (MOSFET)
DS
I
– V (MOSFET)
GS
D
D
3
2.5
2
10000
1000
100
10
Common Source
Common Source
V = 5 V
10V
4.0V
Ta = 25°C
DS
3.5V
−25°C
Ta = 100°C
1.5
1
25°C
VGS=3.0V
1
0.5
0
0.1
V
= 2.5 V
GS
0.01
0
0.5
1
1.5
2
0
1
2
3
4
5
Drain-Source voltage
V
(V)
Gate-Source voltage
V
(V)
DS
GS
R
– I (MOSFET)
D
DS (ON)
R
– V
(MOSFET)
GS
DS (ON)
0.5
0.4
0.3
0.2
0.1
0
1.0
0.8
0.6
0.4
0.2
0
Common Source
Common Source
= 0.7 A
Ta = 25°C
I
D
4 V
V
= 10 V
GS
Ta = 100°C
25°C
15
−25°C
3
0
5
10
20
0
0.5
1
1.5
2
2.5
Drain current
I
(A)
Gate-Source voltage
V
(V)
D
GS
R
– Ta (MOSFET)
V
– Ta (MOSFET)
th
DS (ON)
0.5
3
Common Source
= 0.7A
Common Source
V = 5 V
DS
I
D
2.5
2
0.4
0.3
0.2
0.1
0
I
= 0.1 mA
D
4 V
1.5
1
V
= 10 V
GS
0.5
0
−50
0
50
100
−25
0
25
50
75
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
5
2007-11-01
SSM5H01TU
|Y | – I (MOSFET)
fs
C – V (MOSFET)
DS
D
3
1
500
300
C
iss
100
0.3
0.1
50
30
C
oss
C
rss
10
0.01
0.03
5
3
Common Source
= 5 V
Common Source
Ta = 25°C
f = 1 MHz
V
DS
Ta = 25°C
V
= 0 V
GS
0.001
1
0.1
1
10
100
1000
10000
1
10
100
Drain current
I
(mA)
Drain-Source voltage
V
(V)
D
DS
Dynamic input characteristic (MOSFET)
t – I (MOSFET)
D
10
9
8
7
6
5
4
3
2
1
0
1000
Common Source
V
V
= 15 V
DD
GS
= 0∼4 V
Ta = 25°C
= 10 Ω
10 V
R
G
100
10
1
t
off
V
= 24 V
DD
t
f
t
on
Common Source
= 1.4 A
Ta = 25°C
I
D
t
r
0
0.5
1
1.5
2
2.5
3
3.5
0.01
0.1
1
10
Total gate charge
Q
g
(nC)
Drain current
I
(A)
D
I
– V (MOSFET)
DS
DR
3
2.5
2
Common Source
= 0
V
GS
Ta = 25°C
I
DR
1.5
1
0.5
0
0
−0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 −1.6 −1.8 −2
Drain-Source voltage
V
(V)
DS
6
2007-11-01
SSM5H01TU
Safe operating area (MOSFET)
3
1 ms*
I
max (pulse)
D
I
max (continuous)
D
10 ms*
1
10 s*
DC operation
Ta = 25°C
0.3
0.1
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 645 mm2)
0.03
0.01
*: Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
DSS
max
.
0.1
1
10
100
Drain-Source voltage
V
(V)
DS
P
– Ta (MOSFET)
D
1.2
1
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm
)
t = 10 s
0.8
0.6
DC
0.4
0.2
0
0
50
100
150
Ambient temperature Ta (°C)
7
2007-11-01
SSM5H01TU
SBD Electrical Characteristics Graph
I
– V (SBD)
F
I
– V (SBD)
R R
F
1000
100
10
10
1
100
75
75
50
100
0.1
50
Ta = 25°C
Ta = 25°C
0.01
0
Pulse measurement
5
1
0
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
15
20
Forward voltage
V
(V)
Reverse voltage
V
(V)
F
R
C – V (SBD)
T R
3000
1000
f = 1 MHz
Ta = 25°C
100
10
1
0.01
0.1
1
10
100
Reverse voltage
V
(V)
R
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2007-11-01
SSM5H01TU
Transient thermal impedance Graph
r
th
– t (MOSFET)
w
1000
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
2
)
100
10
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
r
th
– t (SBD)
w
1000
100
10
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
1
0.001
0.01
0.1
1
10 100
1000
Pulse width
t
(s)
w
9
2007-11-01
SSM5H01TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
10
2007-11-01
相关型号：
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TOSHIBA
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