SSM5H14F [TOSHIBA]
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode; 硅N沟道MOS型（U - MOSⅢ ） /硅外延肖特基二极管
| 型号： | SSM5H14F |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode |
| 文件： | 总7页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM5H14F
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H14F
○Fuse cut applications of the battery pack
•
•
•
1.8-V drive
An N-ch MOSFET and a Schottky Barrier Diode in one package.
Low R and Low V
Unit: mm
DS (ON)
F
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
V
30
±12
3.0
V
V
DSS
GSS
DC
I
D
Drain current
Pulse
A
I
6.0
DP
Drain power dissipation
Channel temperature
P
(Note 1)
0.75
150
W
D
1. Gate
T
ch
°C
2. Source
3. Anode
4. Cathode
5. Drain
Schottky Diode (Ta = 25°C)
Characteristics
Symbol
Rating
45
Unit
SMV
Maximum (peak) reverse Voltage
V
V
V
RM
Reverse voltage
V
R
40
100
300
1
JEDEC
JEITA
⎯
Average forward current
Maximum (peak) forward current
Surge current (10ms)
Junction temperature
I
mA
mA
A
O
SC-74A
2-3L1F
I
FM
TOSHIBA
I
FSM
Weight : 14 mg (typ.)
T
j
125
°C
MOSFET and Diode (Ta = 25°C)
Characteristics
Storage temperature range
Operating temperature range
Symbol
Rating
Unit
T
stg
−55 to 125
−40 to 100
°C
°C
T
opr
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
Equivalent Circuit (top view)
5
4
5
4
KEZ
1
2
3
1
2
3
1
2009-05-15
SSM5H14F
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0 V
30
18
⎯
⎯
0.4
3.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= -12 V
Drain cut-off current
I
V
V
V
V
=30 V, V
= 0 V
⎯
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±12 V, V
= 0 V
⎯
±1
1.0
⎯
78
94
138
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DS
V
= 3 V, I = 1 mA
⎯
th
D
|Y |
fs
= 3 V, I = 2.0 A
(Note2)
(Note2)
(Note2)
(Note2)
7.7
59
71
88
270
56
47
4.3
2.8
1.5
20
S
D
I
I
I
= 2.0 A, V
= 1.0 A, V
= 0.5 A, V
= 4.0 V
= 2.5 V
= 1.8 V
D
D
D
GS
GS
GS
Drain–source ON-resistance
R
mΩ
pF
DS (ON)
Input capacitance
C
C
iss
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on time
V
= 10 V, V
= 0 V, f = 1 MHz
GS
DS
oss
C
rss
Q
g
V
V
= 15 V, I = 3.0 A
D
DD
GS
nC
Q
gs
Q
gd
= 4 V
t
on
off
V
V
= 10 V, I = 2 A
DD
GS
D
Switching time
ns
V
= 0 to 2.5 V, R = 4.7 Ω
Turn-off time
t
31
G
⎯
⎯
⎯
Drain-Source forward voltage
Note 2: Pulse test
V
I
= -3.0 A, V = 0 V
GS
(Note2)
–0.85
–1.2
DSF
D
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
2.5 V
90%
V
= 10 V
= 4.7 Ω
DD
2.5 V
OUT
R
G
10%
IN
0 V
D.U.≤ 1%
: t , t < 5 ns
0
V
IN
r f
V
DD
Common Source
90%
10%
10 μs
OUT
Ta = 25°C
V
DD
V
DS (ON)
t
t
r
f
t
t
off
on
Precaution
V
th
can be expressed as voltage between gate and source when the low operating current value is I
1 mA for
D =
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th
GS (off)
lower voltage than V .
th
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Be sure to take this into consideration when using the device.
2
2009-05-15
SSM5H14F
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
V
I
= 1 mA
= 10 mA
= 100 mA
―
―
―
―
―
0.28
0.36
0.54
―
―
―
F (1)
F (2)
F (3)
F
Forward voltage
I
F
I
0.60
5
F
Reverse current
I
V
= 40 V
R
μA
R
Total capacitance
C
V
= 0 V, f = 1MHz
R
18
25
pF
T
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
The Channel-to-Ambient thermal resistance R
and the drain power dissipation PD vary according to the board
th (ch-a)
material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into
account.
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2009-05-15
SSM5H14F
MOS FET
I
– V
I – V
D GS
D
DS
5
10
1
10 V
4.0 V 2.5 V
Common Source
= 3 V
V
DS
4
3
1.8 V
0.1
Ta = 100 °C
2
1
0.01
VGS = 1.5 V
25 °C
− 25 °C
0.001
Common Source
Ta = 25 °C
0
0
0.0001
0.2
0.4
0.6
0.8
1
0
2.0
1.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
200
150
200
150
I
=0.5A
D
Common Source
Ta = 25°C
100
100
50
1.8 V
2.5 V
VGS = 4.0 Ｖ
Ta = 100 °C
25 °C
− 25 °C
50
0
Common Source
Ta = 25°C
0
0
2
6
8
10
0
1
3
4
5
4
2
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
1.0
300
250
Common Source
Common Source
V
= 3V
DS
I
= 1 mA
D
200
150
100
50
0.5 A / 1.8 V
1.0 A / 2.5 V
0.5
I
= 2.0 A / V
= 4.0 V
GS
D
0
−50
0
−50
0
50
100
150
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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2009-05-15
SSM5H14F
MOS FET
.
I
– V
DS
DR
|Y | – I
fs
D
10
10
1
Common Source
Common Source
= 3 V
V
= 0 V
GS
V
DS
D
Ta = 25°C
3
1
I
G
DR
S
0.1
Ta =100 °C
25 °C
0.3
0.01
−25 °C
0.001
0.1
0.01
1
0.1
10
0
–0.2
–0.4
–0.6
–0.8
–1.0
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
t – I
D
C – V
DS
1000
100
1000
Common Source
V
V
= 10 V
DD
GS
500
300
= 0 to 2.5 V
t
off
Ta = 25 °C
= 4.7Ω
R
G
C
iss
t
f
100
50
30
10
t
on
C
oss
C
rss
Common Source
Ta = 25°C
t
r
f = 1 MHz
V
= 0 V
GS
10
0.1
1
0.01
1
10
100
0.1
1
10
Drain–source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
10
8
Common Source
= 3 A
I
D
Ta = 25°C
6
VDD=15V
VDD=24V
4
2
0
0
4
8
12
Total Gate Charge Qg (nC)
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2009-05-15
SSM5H14F
Schottky Barrier Diode
6
2009-05-15
SSM5H14F
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2009-05-15
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