SSM6J07FU [TOSHIBA]
TOSHIBA Transistor Silicon P Channel MOS Type; 东芝晶体管的硅P沟道MOS型
| 型号： | SSM6J07FU |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon P Channel MOS Type |
| 文件： | 总5页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Figure 1:
25.4 mm
´ 25.4 mm
´ 1.6 t,
´ 6
(top view)
Cu Pad: 0.32 mm2
SSM6J07FU
TOSHIBA Transistor Silicon P Channel MOS Type
SSM6J07FU
Power Management Switch
High Speed Switching Applications
Unit: mm
·
·
Small package
Low on resistance
: R = 450 mΩ (max) (V
on
: R = 800 mΩ (max) (V
on
= −10 V)
= −4 V)
GS
GS
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
-30
±20
V
V
DS
V
GSS
DC
I
-0.8
D
Drain current
Pulse
A
I
-1.6
DP
Drain power dissipation
Channel temperature
P
(Note1)
300
mW
°C
D
T
150
ch
JEDEC
JEITA
―
―
Storage temperature range
T
-55~150
°C
stg
Note 1: Mounted on FR4 board
2
TOSHIBA
2-2J1D
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6)
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
6
5
K D F
2
4
3
6
5
2
4
3
0.4 mm
1
1
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2002-01-24
SSM6J07FU
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
-30
¾
¾
¾
±1
¾
mA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-off current
V
I
= -1 mA, V
= 0
GS
(BR) DSS
D
I
V
V
V
= -30 V, V = 0
GS
¾
-1
mA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= -5 V, I = -0.1 mA
-1.1
0.7
¾
¾
-1.8
¾
th
D
Forward transfer admittance
½Y ½
= -5 V, I = -0.4 A
(Note2)
(Note2)
(Note2)
(Note2)
¾
S
fs
D
I
I
I
= -0.4 A, V
= -10 V
= -4 V
350
570
0.7
130
16
450
800
1.6
¾
D
D
D
GS
GS
GS
mW
Drain-source ON resistance
R
DS (ON)
= -0.4 A, V
= -0.4 A, V
¾
= -3.3 V
¾
W
Input capacitance
C
V
V
V
V
V
= -15 V, V
= -15 V, V
= -15 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
¾
pF
pF
pF
ns
ns
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
¾
¾
C
t
¾
52
¾
Turn-on time
Switching time
= -15 V, I = -0.4 A,
¾
28
¾
D
= 0~-4 V, R = 10 W
¾
¾
Turn-off time
t
38
G
off
Note 2: Pulse test
Switching Time Test Circuit
(a) Test circuit
(b) V
IN
I
D
0 V
Output
10%
0
Input
90%
-4 V
-4 V
V
10 ms
(c) V
OUT
V
DD
90%
V
R
= -15 V
DD
G
= 10 W
10%
V
DD
<
D.U. 1%
t
t
f
r
Input: t , t < 5 ns
r
f
Common source
t
t
off
on
Ta = 25°C
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = -100 mA for this
D
th
product. For normal switching operation, V
voltage than Vth.
requires higher voltage than V and V (off) requires lower
th GS
GS (on)
(relationship can be established as follows: V
< V < V )
th GS (on)
GS (off)
Please take this into consideration for using the device.
V
GS
recommended voltage of -4.0 V or higher to turn on this product.
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2002-01-24
SSM6J07FU
I
– V
I – V
D GS
D
DS
-2
-1.5
-1
-3000
-1000
Common Source
Common Source
= -5 V
Ta = 25°C
Ta = 100°C
25°C
-10
-4
V
DS
-100
-10
-3.3
-25°C
-3.0
-1
-2.8
-2.6
-0.5
0
-0.1
V
= -2.4 V
GS
-1.5
-0.01
0
-0.5
-1
-2
0
-0.5
-1
-1.5
-2
-2.5
-3
125
1.2
-3.5
150
1.4
Drain-Source voltage
V
D
(V)
Gate-Source voltage
V
(V)
DS
GS
R
– I
R
– Ta
DS (ON)
DS (ON)
1600
1400
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
600
400
200
0
Common Source
Common Source
I = -0.4 A
D
Ta = 25°C
V
= -3.3 V
GS
V
= -3.3 V
GS
-4 V
-4 V
-10 V
-10 V
0
-0.5
-1
-1.5
(A)
-2
-25
0
25
50
75
100
Drain current
I
D
Ambient temperature Ta (°C)
|Y | – I
fs
D
10
I
– V
DS
Common Source
= -5 V
DR
-2
-1.5
-1
V
DS
Ta = 25°C
Common Source
= 0
3
1
V
GS
D
Ta = 25°C
I
DR
G
S
0.3
0.1
-0.5
0
0.03
0.01
-0.01
-0.03
-0.1
-0.3
-1
(A)
-3
-10
0
0.2
0.4
0.6
0.8
1
Drain current
I
D
Drain-Source voltage
V
(V)
DS
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2002-01-24
SSM6J07FU
C – V
t – I
D
DS
1000
500
500
300
Common Source
V
V
R
= -15 V
= 0~-4 V
= 10 W
DD
GS
g
t
off
Ta = 25°C
C
iss
100
50
100
t
f
C
oss
50
30
Common Source
V = 0 V
GS
f = 1 MHz
C
rss
10
5
t
on
Ta = 25°C
10
5
-0.1
-0.5 -1
-5 -10
-50 -100
t
r
Drain-Source voltage
V
(V)
DS
-0.01
-0.03
-0.1
-0.3
-1
Drain current
I
D
(A)
Safe Operating Area
P – Ta
D
-10
350
300
250
200
150
100
50
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
2
Cu pad: 0.32 mm ´ 6)
I
max (pulse) *
D
I
1 ms
Figure 1
10 ms
-1
max
D
100 ms
(continuous)
DC operation
Ta = 25°C
-0.1
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´1.6 t
Cu pad: 0.32 mm ´ 6) Figure 1
0
2
0
20
40
60
80
100
120
140
160
-0.01
Ambient temperature Ta (°C)
* Single non-repetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
-0.001
-0.1
-1
Drain-Source voltage
-10
-100
V
(V)
DS
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2002-01-24
SSM6J07FU
RESTRICTIONS ON PRODUCT USE
000707EAA
·TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
·The information contained herein is subject to change without notice.
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2002-01-24
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