SSM6J53FE(TE85L) [TOSHIBA]
SSM6J53FE(TE85L);
| 型号： | SSM6J53FE(TE85L) |
| 厂家： | 
TOSHIBA |
| 描述： | SSM6J53FE(TE85L) |
| 文件： | 总6页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○Power Management Switch Applications
○High-Speed Switching Applications
Unit : mm
1.6±0.05
1.2±0.05
•
•
•
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : R = 136 mΩ (max) (@V
= -2.5 V)
= -1.8 V)
= -1.5 V)
on
GS
GS
GS
1
2
6
5
: R = 204 mΩ (max) (@V
on
: R = 364 mΩ (max) (@V
on
Absolute Maximum Ratings (Ta = 25°C)
4
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-20
± 8
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-1.8
D
Drain current
A
Pulse
I
-3.6
DP
1,2,5,6 :Drain
3 :Gate
4 :Source
Drain power dissipation
Channel temperature
P
(Note 1)
500
mW
°C
D
T
ch
150
Storage temperature range
T
stg
−55~150
°C
ES6
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2N1A
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= −1 mA, V
= −1 mA, V
= 0
−20
−12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= +8 V
Drain cut-off current
I
V
V
V
V
= −20 V, V
= 0
⎯
−10
±1
μA
μA
V
DSS
DS
GS
DS
DS
GS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 8 V, V
= 0
⎯
⎯
GSS
V
= −3 V, I = −1 mA
−0.3
2.7
⎯
⎯
−1.0
⎯
th
D
|Y |
fs
= −3 V, I = −0.9 A
(Note 2)
= −2.5 V (Note 2)
= −1.8 V (Note 2)
= −1.5 V (Note 2)
5.4
95
S
D
I
I
I
= −1.0 A, V
= −1.0 A, V
= −0.1 A, V
136
204
364
⎯
D
D
D
GS
GS
GS
Drain-Source on-resistance
R
mΩ
⎯
122
137
568
75
DS (ON)
⎯
Input capacitance
C
⎯
iss
V
= −10 V, V
= 0
GS
DS
pF
ns
Output capacitance
C
⎯
⎯
oss
f = 1 MHz
Reverse transfer capacitance
C
⎯
67
⎯
rss
on
Turn-on time
t
t
V
V
= −10 V, I = −0.9 A
⎯
29
⎯
DD
GS
D
Switching time
= 0 ~ −2.5 V, R = 4.7 Ω
G
Turn-off time
⎯
⎯
⎯
⎯
⎯
39
10.6
7.4
3.3
0.8
⎯
⎯
off
Total gate charge
Q
g
V
V
= −16 V, I
= − 4 V
= -1.8 A,
DS
DS
GS
nC
V
Gate-Source charge
Q
⎯
gs
gd
Gate-Drain charge
Q
⎯
Drain-Source forward voltage
V
I
= 1.8 A, V = 0
GS
(Note 2)
1.2
DSF
D
Note 2: Pulse test
1
2007-11-01
SSM6J53FE
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
0 V
10%
OUT
0
IN
90%
−2.5 V
−2.5V
R
L
V
DS (ON)
90%
10%
OUT
10 μs
V
DD
V
= -10 V
DD
V
DD
R
= 4.7 Ω
G
t
t
f
r
<
D.U. 1%
V
: t , t < 5 ns
IN
r
f
t
t
off
on
Common Source
Ta = 25°C
Marking
Equivalent Circuit (top view)
6
5
KG
2
4
3
6
5
4
1
1
2
3
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I = -1mA
D
for this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th
GS (off)
lower voltage than V . (The relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on).
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM6J53FE
I
– V
DS
D
I
– V
GS
D
-4
-10000
-1000
-100
-10
Common Source
= -3 V
-4 V
-1.5 V
-3.5
V
DS
-3
-2.5 V
-2.5
Ta = 85 °C
-1.8 V
-2
25 °C
-1.5
VGS = -1.2 V
-1
-1
-0.5
0
−25 °C
-0.1
Common Source
Ta = 25°C
-0.01
0
-0.5
-1
-1.5
-2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2 -1.4
-1.6
Drain - Source voltage
V
(V)
DS
Gate - Source voltage
V
(V)
GS
R
– V
GS
R
– V
GS
DS (ON)
DS (ON)
400
300
200
400
300
200
100
0
I
= -0.1 A
I
= -1.0 A
D
D
Common Source
Common Source
25 °C
25 °C
Ta = 85 °C
−25 °C
Ta = 85 °C
100
0
−25 °C
0
-2
-4
-6
-8
0
-2
-4
-6
-8
Gate - Source voltage
V
(V)
GS
Gate - Source voltage
V
(V)
GS
R
– I
D
DS (ON)
R
– Ta
DS (ON)
450
400
350
500
400
300
Common Source
Common Source
Ta = 25 °C
300
250
I
= -0.1 A / V
= -1.5 V
D
GS
V
= -1.5 V
GS
-1.0 A / -1.8 V
200
200
100
-1.8 V
150
100
50
-2.5 V
-1.0 A / -2.5 V
50
0
0
−50
0
-1
-2
-3
-4
0
100
150
Drain current
I
(A)
D
Ambient temperature Ta (°C)
3
2007-11-01
SSM6J53FE
V
– Ta
|Y | – I
fs
th
D
-0.8
-0.7
30
10
Common Source
= -3 V
Common Source
V = -3 V
V
DS
= -1 mA
DS
Ta = 25 °C
I
D
-0.6
-0.5
-0.4
-0.3
-0.2
3
1
0.3
0.1
-0.1
0
0.03
0.01
-10
-100
−25
0
25
50
75
100
125
150
1
-1000
-10000
Drain current
I
(mA)
D
Ambient temperature Ta (°C)
C – V
Dynamic Input Characteristic
DS
5000
3000
-10
-9
-8
-7
-6
1000
C
iss
500
300
V
= -16 V
DD
-5
-4
-3
-2
100
C
oss
Common
Source
50
30
C
rss
Ta = 25 °C
f = 1 MHz
Common Source
= -1.8 A
I
D
-1
0
V
= 0 V
Ta = 25 °C
GS
10
-0.1
-1
-10
-100
0
5
10
15
20
25
Total gate charge
Q
g
(nC)
Drain – Source voltage
V
(V)
DS
t – I
D
1000
I
– V
DS
DR
-2
Common Source
= 0 V
t
t
off
V
GS
D
Ta = 25 °C
-1.5
100
I
DR
f
G
S
-1
-0.5
0
t
t
on
10
Common Source
r
V
V
= -10 V
DD
GS
= 0 ∼ -2.5 V
Ta = 25 °C
= 4.7 Ω
R
G
1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
Drain-Source voltage
V
(V)
Drain current
I
(A)
DS
D
4
2007-11-01
SSM6J53FE
r
th
– t
w
1000
100
10
Single Pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe operating area
-10
-3
I
max (Pulsed) *
P – Ta
D
D
600
500
400
300
1 ms*
I
max (Continuous)
D
Mounted on FR4 board
10 ms*
(25.4 mm × 25.4 mm × 1.6 t,
-1
2
Cu Pad: 645 mm )
-0.4
10s*
DC operation
Ta = 25°C
-0.1
200
100
-0.03
-0.01
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t
2
Cu pad: 645 mm
)
* Single Non-repetitive Pulse
0
0
50
100
150
Ta = 25°C
-0.003
-0.001
Curves must be derated
linearly with increase in
temperature.
Ambient temperature Ta (°C)
-0.1
-0.3
-1
-3
-10
-30
-100
Drain-Source voltage
V
(V)
DS
5
2007-11-01
SSM6J53FE
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2007-11-01
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