SSM6K34TU [TOSHIBA]
High Current Switching Applications; 大电流开关应用
| 型号： | SSM6K34TU |
| 厂家： | 
TOSHIBA |
| 描述： | High Current Switching Applications |
| 文件： | 总5页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6K34TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K34TU
High Current Switching Applications
Power Management Switch Applications
Unit: mm
•
•
4.5Vdrive
Low on resistance:
:R = 77 mΩ (max) (@V
= 4.5 V)
= 10 V)
on
GS
GS
:R = 50 mΩ (max) (@V
on
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
30
±20
3
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
Pulse
I
6
DP
P
D
Drain power dissipation
Channel temperature
500
mW
(Note 1)
T
ch
150
°C
°C
1,2,5,6 : Drain
3
4
: Gate
Storage temperature range
T
stg
−55~150
: Source
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
⎯
⎯
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0
30
15
⎯
⎯
⎯
⎯
⎯
⎯
6.8
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= −20 V
= 0
Drain cut-off current
I
V
V
V
V
= 30 V, V
10
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±16 V, V
= 0
⎯
±10
2.5
⎯
DS
V
= 10 V, I = 1 mA
1.3
3.4
th
D
⏐Y ⏐
= 10 V, I = 2 A
(Note2)
(Note2)
(Note2)
S
fs
D
I
I
= 2 A, V
= 4.5 V
= 10 V
⎯
58
77
D
D
GS
GS
Drain-Source ON resistance
R
mΩ
DS (ON)
= 2 A, V
⎯
⎯
⎯
⎯
―
―
―
⎯
⎯
―
38
470
60
50
⎯
Input capacitance
C
C
iss
V
= 10 V, V
= 0, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
Total gate charge
⎯
DS
rss
C
80
⎯
oss
Q
g
10
―
V
V
= 24 V, I = 3.0 A
DS
DS
GS
Gate−source charge
Gate−drain charge
Q
gs
7.6
2.4
8.3
22
―
nC
= 10 V
Q
gd
―
Turn-on time
Turn-off time
t
t
V
V
= 15 V, I = 2 A,
⎯
on
off
DD
GS
D
Switching time
ns
V
= 0~10 V, R = 4.7 Ω
⎯
G
Drain-Source forward voltage
V
I
= -3A, V = 0V
GS
(Note2)
−0.8
−1.2
DSF
D
Note2: Pulse test
1
2007-11-01
SSM6K34TU
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
10 V
0 V
90%
OUT
10 V
IN
10%
0
V
DD
OUT
10 μs
90%
10%
V
DD
V
= 15 V
DD
V
DS (ON)
R
= 4.7 Ω
t
f
t
r
G
<
D.U. 1%
t
t
off
on
V
: t , t < 5 ns
IN
r
f
Common Source
Ta = 25°C
Marking
Equivalent Circuit (Top View)
6
5
4
3
6
5
4
K N C
1
2
1
2
3
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th
voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2007-11-01
SSM6K34TU
I
– V
DS
I
– V
D
D
DS
5
4
3
2
10
8
10
4.5
10
Common source
3.8
3.5
8.0
6.0
4.5
Ta = 25°C
8.0
3.8
Common source
Ta = 25°C
Pulse test
6.0
Pulse test
6
4
3.5
3.2
3.0
3.2
1
0
2
0
3.0
V
= 2.8 V
GS
V
= 2.8 V
GS
4
0
1.0
0.4
0
5
0.2
0.6
0.8
2
1
3
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
(V)
DS
I
D
– V
V
– V
DS GS
GS
8
6
2.0
1.6
Common source
= 10 V
Common source
Ta= 25℃
V
DS
Pulse test
Pulse tset
1.2
0.8
4
2
0
25
0.4
0
2
6
100
I
= 4A
D
1
Ta = −55°C
0
10
4
0
5
2
8
2
1
3
4
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON) D
D
100
100
10
Common source
= 10 V
V
DS
Pulse test
4.5
Ta = −55°C
100
V
= 10V
GS
25
30
1
Common source
Ta = 25°C
Pulse test
0.1
10
0.1
0
1
10
0.3
3
1
10
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2007-11-01
SSM6K34TU
R
– Ta
I
– V
DS (ON)
DR
DS
3.0
10
120
100
Common source
Pulse test
10
5.0
5
3
I
= 4A
D
1.0
2A
80
V
= 0 V
GS
1A
V
= 4.5V
GS
1
60
40
0.5
0.3
V
= 10V
GS
I
= 4, 2, 1A
D
Common source
Ta = 25°C
20
0
Pulse test
0.1
0
-1.0
−80
−40
0
40
80
120
160
-0.2
-0.4
-0.6
-0.8
-1.2
Ambient temperature Ta (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Ta
th
DS
1000
100
10
3
2
1
C
iss
C
oss
C
rss
Common source
= 10 V
Common source
= 0 V
V
DS
= 1mA
V
GS
I
D
f = 1 MHz
Ta = 25°C
Pulse test
1
0.1
0
−80
1
3
5
10
30 50 100
−40
0
40
80
120
160
0.3
Drain-source voltage
V
DS
(V)
Ambient temperature Ta (°C)
r
th
– t
w
Dynamic Input Characteristic
100
10
8
Common Source
= 3.0 A
I
D
Ta = 25°C
100
10
1
6
VDD = 15V
VDD = 24V
4
2
0
Single Pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
0
2
4
6
8
10
0.00
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Total Gate Charge Qg (nC)
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2007-11-01
SSM6K34TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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